SK35GD126ET

Absolute Maximum Ratings # , -. /0     

 
Symbol Conditions Values Units
IGBT
123 #4 , -. / 6-77 1
% #4 , 6.7 / # , -. / 87 '
# , 97 / :- '
%;< %;<, -  % =7 '
1&23 > -7 1

1 , ?77 1@ 1&2 A -7 1@ #4 , 6-. / 67 C
SEMITOP® 3 123 B 6-77 1
Inverse Diode
IGBT Module %) #4 , 6.7 / # , -. / :8 '
# , 97 / -: '
%);< %);<, -  %) =7 '

SK35GD126ET Module
%;<3 '
#+4 D87 EEE F6.7 /

Preliminary Data # D87 EEE F6-. /

1 '0 6 E -.77 1

Features # , -. /0     

 
Characteristics
 
   Symbol Conditions min. typ. max. Units
  
  
         IGBT
 

    1&2 1&2 , 120 % , 60. ' . .09 ?0. 1
 
 
 %23 1&2 , 7 10 12 , 123 #4 , -. / '
    !"# 
$ %&# #4 , 6-. / '
 '( 
$ )* %&23 12 , 7 10 1&2 , -7 1 #4 , -. / ?77 '
 %    !#     #4 , 6-. / '
  127 #4 , -. / 6 60- 1

Typical Applications* #4 , 6-. / 70G 1

2 1&2 , 6. 1 #4 , -./ -7 -? H
 %+  
#4 , 6-./ :6 H
12  % , :. '0 1&2 , 6. 1 #4 , -./
 +E 60= -06 1
#4 , 6-./
 +E - 1
  -0. )
  12 , -.0 1&2 , 7 1  , 6 <I 706:- )
  7066. )
 9. 
 ;& , 6. H 1 , ?771 :7 
2 %, :.' 80? J
 ;& , 6. H #4 , 6-. / 8:7 
 1&2,>6.1 G7 
2 80: J
;4D   %&# 607. KL*

GD-ET

1 21-02-2007 SCT © by SEMIKRON

SK35GD126ET
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
1) , 12 %) , :. '@ 1&2 , 7 1 #4 , -. /
 +E 609 -06 1
#4 , 6-. /
 +E 609 1
1)7 #4 , -. / 6 606 1
#4 , 6-. / 709 1
) #4 , -. / -: -G H
#4 , 6-. / :6 H
® %;;< %) , :. ' #4 , 6-. / 8: '
SEMITOP 3 M L , D6::7 'LC = C
2 1, ?771 -0G J
IGBT Module ;4D    60= KL*

<    N -0-. -0. !

 :7 
SK35GD126ET
Temperature sensor
;677 # ,677/ ;-.,.NH 8G:>.O H

Preliminary Data

Features This is an electrostatic discharge sensitive device (ESDS), international standard

 
   IEC 60747-1, Chapter IX.
  
  
         * The specifications of our components may not be considered as an assurance of
 

    component characteristics. Components have to be tested for the respective
 
 
 application. Adjustments may be necessary. The use of SEMIKRON products in
    !"# 
$ %&# life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
 '( 
$ )* our personal.
 %    !#    
 

Typical Applications*
 %+  

GD-ET

2 21-02-2007 SCT © by SEMIKRON

SK35GD126ET

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'

Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)

Fig. 6 Typ. gate charge characteristic

3 21-02-2007 SCT © by SEMIKRON

SK35GD126ET

Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG

Fig. 10 CAL diode forward characteristic

4 21-02-2007 SCT © by SEMIKRON

SK35GD126ET
UL recognized file no. E 63 532

  #.- 3       0   "0       

 P -

  # .- &D2#

5 21-02-2007 SCT © by SEMIKRON