RTP

DESCRIPTION
RbTiOPO4(RTP)—a crystal with large nonlinear optical coefficient, large electro-optical coefficient, high
photoresist damage threshold and stable physical and chemical properties
The growth temperature ranges from 950 °C to 800 °C and the growth period is usually between 45 and 60
days.As RTP is transparent from 0.4 to 3.5 µm, it can be used in multiple types of laser such as Er:YAG
laser at 2.94 µm with fairly good efficiency. Bulk absorption measurements at 1.064 µm range from 50 to
150 ppm using Photothermal Common Path Interferometer.
RbTiOPO4(RTP) crystal is a kind of nonlinear optical crystal material with excellent comprehensive proper-
ties. RTP is currently the most commonly used type of practical electro-optic crystals with high frequency
repetition, high power and narrow pulse width laser Q switching. RTP electro-optical devices are not only
used in laser micromachining and laser ranging, but also in major scientific exploration projects because of
their excellent comprehensive performance.

APPLICATION
electro-optic modulator
High repetition rate (≥100 kHz) operation can be achieved by Q-switching, especially actively Q-switching,
due to its stable pulse energy and low temporal jitter at high repetition rates. Active Q-switching mainly con-
tains two commonly used Q-switch modes, acousto-optic (AO) Q-switch and electro-optic (EO) Q-switch.
The AO Q-switched laser has the feature of high repetition rate (normally can reach 200 kHz), but it is limit-
ed in many fields due to its tendency to produce long pulse (typically several tens to one hundred nano-sec-
onds). Compared to AO Q-switch, EO Q-switch can overcome the shortcomings of AO Q-switch, and get
stable short pulses due to its fast loss change. But the EO Q-switch requires very high voltage driver; this
leads the high pulse repetition rate is difficult to obtain. In recent years, with the development of new types
of electro-optic crystals RTP, the repetition rates of EO Q-switched solid state lasers have been improved
significantly.
electro-optic Q-switch
A high pulse repetition frequency Nd:YAG twisted-mode laser uses an RTP crystal as the electro-optic
Q-switch. Stable single-longitudinal-mode laser beams at 1, 5, and 10 kHz were obtained with a linewidth
less than 0.1 GHz. Under an incident pump power of 7.5 W and a PRF of 10 kHz, the maximum output
power of the single-longitudinal-mode laser was 1.19 W. The corresponding conversion efficiency, single
pulse energy and pulse peak power were 15.8%, 119 µJ, and 2.5 kW, respectively.

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RTP
FEATURES Property Value

Ionic conductivity (room temperature, 10 kHz) 10-8 S/cm

wide transparency range
a1=1.01×10-5
Stable mechanical and chemical properties Thermal Expansion Coefficients, /°C a2=1.37×10-5
a3=-4.17×10-6

High damage threshold

Small volume STANDARD SPECIFICATIONS OF LASER GRADE RTP CRYSTALS

Not easy to deliquesce

Property Value

High temperature stability >15 J/cm2 at 10 Hz,10 ns at

High damage threshold 1064 nm performed on coated
Low half-wave voltage crystals of 10 mm long

1300 V for Y-cut and 1600 V

Suitable for high-frequency operation for X-cut at 1064 nm applied
Low operating voltage to a crystal pair of 4×4 mm²
for the aperture and 2×10
mm for the length
PARAMETERS
Low bulk absorption <250 ppm/cm at 1064 nm

PHYSICAL AND CHEMICAL PROPERTIES

Property Value
ELECTRO-OPTICAL PROPERTIES
Chemical formula RbTiOPO4

Crystal structure Orthorhombic Property Value

Point group mm2 Average refractive index 1.8

a 12.96 Transparency range, µm 0.35 → 4.5

Lattice parameters, Å b 10.56
c 6.49 Residual absorption (PCI) at 1064 nm <250 ppm/cm

Electro-optical constants r13 10.9

Density, g.cm-3 3.6
(@ 633 nm, 1 kHz), pm. V-1 r23 15
r33 33
Resistivity (20°C, 20% Humidity), Ohm.cm 1012
Coeffcients in Sellmeier’s equation for 0.5<λ<3.5 µm
Aperture, mm2 from 2×2 to 9×9
2.1982
Length, mm up to 10 2.2804
Ai
2.3412
Dimension tolerance ±0.1 mm
0.8995
Flatness <l/8 @633 nm Bi 0.8459
1.0609
Surface quality Scratch/Dig 10/5
0.2152
Parallelism better than 30 arc sec Ci 0.2296
0.2646
Perpendicularity better than 30 arc min
1.5433
Angle tolerance △q < 0.5°, △f < 0.5° Di 1.1009
0.9714
Coating AR coatings
11.585
Clear aperture Ei 9.66
>90% central area
8.149
Transmitting wavefront distortion less than l/8 @ 633 nm Dimension
1.9727
Melting Point ~ 1000 °C pi 1.9696
2.0585
Ferroeletric transition temperature ~810 °C
1.9505
Mohs Hardness 5 qi 1.9369
2.0038
Hygroscopic Susceptibility No
Dielectric constant εeff=13

Absorption Coefficient www.laser-crylink.com

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