2N2219A

® 2N2222A

HIGH SPEED SWITCHES

PRELIMINARY DATA

DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
( s )
switching application at collector current up to
500mA, and feature useful current gain over a
u ct
wide range of collector current, low leakage
o d
currents and low saturation voltage.

P r
e
let
TO-18 TO-39

s o
Ob
) - INTERNAL SCHEMATIC DIAGRAM

t ( s
u c
o d
P r
e t e
o l
b s
ABSOLUTE MAXIMUM RATINGS

O Symbol
V CBO
Parameter
Collector-Base Voltage (I E = 0)
Value
75
Unit
V
V CEO Collector-Emitter Voltage (I B = 0) 40 V
V EBO Emitter-Base Voltage (I C = 0) 6 V
IC Collector Current 0.6 A
I CM Collector Peak Current (t p < 5 ms) 0.8 A
P tot Total Dissipation at T amb ≤ 25 o C
for 2N2219A 0.8 W
for 2N2222A 0.5 W
at T C ≤ 25 o C
for 2N2219A 3 W
for 2N2222A 1.8 W
o
T stg Storage Temperature -65 to 175 C
o
Tj Max. Operating Junction Temperature 175 C

February 2003 1/7

2N2219A / 2N2222A

THERMAL DATA
TO-39 TO-18
o
R thj-case Thermal Resistance Junction-Case Max 50 83.3 C/W
o
R thj-amb Thermal Resistance Junction-Ambient Max 187.5 300 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off V CB = 60 V 10 nA
Current (I E = 0) V CB = 60 V T j = 150 o C 10 µA
I CEX Collector Cut-off V CE = 60 V 10 nA
Current (V BE = -3V)

( s )
ct
I BEX Base Cut-off Current V CE = 60 V 20 nA
(V BE = -3V)

du
I EBO Emitter Cut-off Current V EB = 3 V 10 nA

V (BR)CBO
(I C = 0)
Collector-Base I C = 10 µA 75
r o V
Breakdown Voltage
(I E = 0)
e P
V (BR)CEO ∗ Collector-Emitter I C = 10 mA
e t 40 V

ol
Breakdown Voltage

V (BR)EBO
(I B = 0)
Emitter-Base I E = 10 µA
b s 6 V
Breakdown Voltage
(I C = 0)
- O
V CE(sat) ∗ Collector-Emitter
Saturation Voltage
(s )
I C = 150 mA
I C = 500 mA
I B = 15 mA
I B = 50 mA
0.3
1
V
V
V BE(sat) ∗ Base-Emitter
c tI C = 150 mA I B = 15 mA 0.6 1.2 V
Saturation Voltage
u I C = 500 mA I B = 50 mA 2 V
h FE ∗ DC Current Gain

r od I C = 0.1 mA
I C = 1 mA
V CE = 10 V
V CE = 10 V
35
50

e P I C = 10 mA
I C = 150 mA
V CE = 10 V
V CE = 10 V
75
100 300

l e t I C = 500 mA
I C = 150 mA
V CE = 10 V
V CE = 1 V
40
50

o I C = 10 mA V CE = 10 V

bs
T amb = -55 o C 35
hfe ∗ Small Signal Current I C = 1 mA V CE = 10 V f = 1KHz 50 300

O fT
Gain
Transition Frequency
I C = 10 mA
I C = 20 mA
V CE = 10 V
V CE = 20 V
f = 1KHz 75
300
375
MHz
f = 100 MHz
C EBO Emitter-Base IC = 0 V EB = 0.5 V f = 100KHz 25 pF
Capacitance
C CBO Collector-Base IE = 0 VCB = 10 V f = 100 KHz 8 pF
Capacitance
R e(hie) Real Part of Input I C = 20 mA V CE = 20 V 60 Ω
Impedance f = 300MHz
* Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %

2/7
 2N2219A / 2N2222A

ELECTRICAL CHARACTERISTICS (continued)

Symbol Parameter Test Conditions Min. Typ. Max. Unit
NF Noise Figure I C = 0.1 mA V CE = 10 V 4 dB
f = 1KHz R g = 1KΩ
hie Input Impedance I C = 1 mA V CE = 10 V 2 8 kΩ
I C = 10 mA V CE = 10 V 0.25 1.25 kΩ
h re Reverse Voltage Ratio I C = 1 mA V CE = 10 V 8 10 -4
-4
I C = 10 mA V CE = 10 V 4 10
h oe Output Admittance I C = 1 mA V CE = 10 V 5 35 µS
I C = 10 mA V CE = 10 V 25 200 µS
t d ∗∗
)
Delay Time V CC = 30 V I C = 150 mA 10 ns
I B1 = 15 mA V BB = -0.5 V

( s
ct
t r ∗∗ Rise Time V CC = 30 V I C = 150 mA 25 ns
I B1 = 15 mA V BB = -0.5 V
t s∗∗ Storage Time V CC = 30 V I C = 150 mA
d u 225 ns
I B1 = -IB2 = 15 mA
o
Pr
t f ∗∗ Fall Time V CC = 30 V I C = 150 mA 60 ns
I B1 = -IB2 = 15 mA
r bb’ C b’c Feedback Time I C = 20 mA V CE = 20 V

e t e 150 ps
Constant f = 31.8MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
o l
∗∗ See test circuit

b s
- O
( s )
c t
d u
r o
e P
l e t
s o
O b

3/7
 2N2219A / 2N2222A

Test Circuit fot td, tr.

( s )
uct
o d
P r
e te
o l
PULSE GENERATOR :
tr ≤ 20 ns
b s
TO OSCILLOSCOPE
tr ≤ 5.0 ns
PW ≤ 200 ns
ZIN = 50 Ω
O
ZIN < 100 KΩ
CIN ≤ 12 pF

-
(s )
Test Circuit fot td, tr.

c t
d u
r o
e P
l e t
s o
O b

PULSE GENERATOR : TO OSCILLOSCOPE :

PW ≈ 10 µs tr < 5.0 ns
ZIN = 50 Ω ZIN > 100 KΩ
TC ≤ 5.0 ns CIN ≤ 12 pF

4/7
 2N2219A / 2N2222A

TO-18 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 12.7 0.500

B 0.49 0.019

D 5.3
( s )
0.208

ct
du
E 4.9 0.193

F 5.8
r o 0.228

e P
G 2.54
t
0.100

e
H 1.2

s ol 0.047

I 1.16

O b 0.045

L 45o

( s)- 45o

c t
d u
r o
e P
l e t D A

s o G

O bH
I
E
F

L
B

0016043

5/7
 2N2219A / 2N2222A

TO-39 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 12.7 0.500

B 0.49 0.019

D 6.6
( s
0.260)
ct
du
E 8.5 0.334

F 9.4
r o 0.370

e P
G 5.08

e t
0.200

H 1.2

s ol 0.047

I 0.9

O b 0.035

( s )- 45o (typ.)

c t
d u
r o
e P
l e t D A

sI o G

O b
H
E
F

L
B

P008B

6/7
 2N2219A / 2N2222A

( s )
u ct
o d
P r
e t e
o l
b s
- O
(s )
c t
d u
r o
e P
l e t
s o
O b

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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