SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

BD135
BD137
BD1 39I
MEDIUM POWER AMPLIFIER APPLICATIONS. Unit in mm
7.9MAX.
FEATURES
. Designed for Complementary Use with BD136, BD138
and BD140.

MAXIMUM RATINGS (Ta=25°C)

CHARACTERISTIC SYMBOL RATING UNIT
BD135 45
Collector-Base
BD137 VCBO 60
Voltage
BD139 80

BD135 45
Collector-Emitter
BD137 v CEO 60
Voltage
BD139 80

Emitter-Base Voltage Vebo 1. EMITTER

DC 0.5 Z. COLLECTOR (HEAT S INK)
Collector Current Z. BASE
Peak I CM 1.5
TO— 126
Collector Power Ta=25 C
PC
Dissipation TOSHIBA 2-8P1A
Tc^60 C 6.5
Junction Temperature 150 Weight : 0.72g

Storage Temperature Range L

stg -55-150

ELECTRICAL CHARACTERISTICS (Ta=25 C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
V CB =30V, I E =0 - - 0.1
Collector Cut-off Current ICBO fik
Vcb=30V, lE=0, Ta=125°C - - 10

Emitter Cut-off Current VEB=5V, I C =0 - - 10

lEBO fik

BD135 45 - -
Collector-Emitter
Breakdown Voltage BD137 IC=30mA, Ib=0 60 - - V
V(BR)CE0
BD139 80 - -

Ic =5mA - -
hFE(l) VcE =2v .
25

I c =150mA 40 - 250
DC Current Gain hFE(2) V CE =2V,
h FE(3) V CE =2V, I c =500mA 25 - -

Collector-Emitter - - 0.5 V
VcE(sat) IC=500mA, lB=50mA
Saturation Voltage
Base-Emitter Voltage VBE V CE =2V, Ic= 500mA - - 1.0 V

Transition Frequency fT V CE =2V, I C =50mA 50 250 - MHz

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BD135*BD137»BD139

In - V CE h PE - IC
1.4
50 COMMON :: COVMON KM1TTEK

1.2
s
^ <£l Tc =2 5°C
500 " V CE = 2V

/s ^
300 Tc == 2 5°C

1.0 /
t. . —20 "

as 15

10
0.6

5
1005 a oi ao3 ao5 ai <

COLLECTOR CURRENT (A)

2.5

Ig=lmA
v CE(sat)

12
COLLECTOR—EMITTER VOLTAGE
3 4
V CE (V)
5
0.5
- common emitter
-i c /Ib=io

Q3

BE
H oo 0.1

COMMON a
I

EMITTER Q05
/ V CE -2V 003
/ Tc=2 5°C
a <
1.0
o> 5 10 30 50 100 300 500 1000 2000
' COLLECTOR CURRENT Ic (mA)

PC - Tc
0.6

HTT.AT

5
— // 4
0.4 as 1.2

BASE—EMITTER VOLTAGE (V) 2

20 40 60 80 100 120 140

CASE TEMPERATURE Tc (°C

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 BD135*BD137*BD139

Ta SAFE OPERATING AREA

FREE ATRfNO HEAT SINK")

0i4

0.2

20 40 60 80 100 120 140

AMBIENT TEMPERATURE Ta ("C)

COLLECTOR—EMITTER VOLTAGE

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