The University of Texas at Dallas Erik Jonsson School of

Engineering & Computer Science

OPTICAL DETECTORS AND RECEIVERS

Notes prepared for EE 6310

by

Professor Cyrus D. Cantrell

August–December 2003

c C. D. Cantrell (06/2003)
 The University of Texas at Dallas Erik Jonsson School of
Engineering & Computer Science

DETECTORS FOR OPTICAL COMMUNICATIONS (1)

• All detectors for optical communications use optical absorption in a depletion

region to convert photons into electron-hole pairs, and then sense the number
of pairs

Because of the electric field in the depletion region, the electron-hole pairs
give rise to a photocurrent, Ip

One figure of merit is the responsivity, defined as the ratio of the
photocurrent to the optical power, Pin:
Ip η Q q ηQ q
R= = = (units: A/W)
Pin
ω hν
where ηQ = quantum efficiency and q = charge generated per photon
electron-hole pair generation rate
ηQ =
photon incidence rate

c C. D. Cantrell (11/2002)
 The University of Texas at Dallas Erik Jonsson School of
Engineering & Computer Science

DETECTOR MATERIALS

• Bandgaps and emission wavelengths (at 300◦ K) of semiconductors used as

detectors for optical communications

Material Bandgap, eV Wavelength Wavelength of Responsivity

range (nm) peak response (nm) (max) (A/W)
Si 1.17 300–1100 800 0.5
Ge 0.775 500–1800 1550 0.7
InGaAs 0.75–1.24 1000–1700 1700 1.1

c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School of
Engineering & Computer Science

DETECTORS FOR OPTICAL COMMUNICATIONS (2)

• p-n photodiodes

Electron-hole pairs are created in the depletion region of a p-n junction
in proportion to the optical power

Electrons and holes are swept out by the electric field, leading to a current
• p-i-n photodiodes

Electric field is concentrated in a thin intrinsic (i) layer
• Avalanche photodiodes

Like p-i-n photodiodes, but have an additional layer in which an average of
M secondary electron-hole pairs are generated through impact ionization
for each primary pair
◦ Leads to a responsivity
ηq
R=M

ω

c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School of
Engineering & Computer Science

p-n PHOTODIODES

• Operated in reverse-biased regime for detection, instead of forward-biased

regime for emission
• Wide depletion region

Advantage: High quantum efficiency

Problem: Diffusion of carriers created in the boundary p and n regions
limits the detector bandwidth

Problem: Transit time across the depletion region also limits the detector
bandwidth

RC time constant:
τRC = (RL + Rs)Cp
RL = load resistance, Rs = internal series resistance, Cp = parasitic
capacitance

c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School of
Engineering & Computer Science

PHOTOCONDUCTIVE vs. PHOTOVOLTAIC OPERATION

• Photoconductive regime: Reverse-biased

• Photovoltaic regime: Unbiased

Joseph C. Palais, Fiber Optic Communications, 4th Edition

 The University of Texas at Dallas Erik Jonsson School of
Engineering & Computer Science

p-i-n PHOTODIODES

• Basic idea: Eliminate diffusion of carriers created outside the depletion

region by:

Sandwiching a thin layer of a different semiconductor material (of intrinsic
conductivity) between the outer p and n layers

Choosing the outer p and n layers to be transparent to light in the working
wavelength range
• Typical sensitivities for a BER of 10−10 are −26 dBm at a bit rate B = 2.5
Gb/s, or −18 dBm at a bit rate B = 10 Gb/s

c C. D. Cantrell (07/2002)
The University of Texas at Dallas Erik Jonsson School of
Engineering & Computer Science

InGaAs p-i-n DC RESPONSIVITY vs. WAVELENGTH

1.2
1.1
1
0.9
0.8
Responsivity ( A/ W)

0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800
Wavelength (nm)

Agilent 5988-5927EN.pdf
The University of Texas at Dallas Erik Jonsson School of
Engineering & Computer Science

p-i-n SENSITIVITY vs. BIT RATE

Bit rate (Mb/s)

100 125 155 310 622 1065 1250 1500 1750 2125 2488 2700
-15

-17
Optical Sensitivity (dBm)

-19

-21

-23

-25

-27

Agilent 5988-5927EN.pdf
 The University of Texas at Dallas Erik Jonsson School of
Engineering & Computer Science

LOAD-LINE ANALYSIS OF A p-i-n CIRCUIT

• Photoconductive regime: Voltage across load resistor is proportional to

optical power

For optical powers above a certain critical value (40 µW in this example),
the voltage across the load grows very slowly as a function of optical power

Joseph C. Palais, Fiber Optic Communications, 4th Edition

 The University of Texas at Dallas Erik Jonsson School of
Engineering & Computer Science

AVALANCHE PHOTODIODES

• Internal gain

Electron-hole pairs created by absorption of photons are accelerated to en-
ergies at which more pairs are created, then the new pairs are accelerated
and create more pairs, in an “avanlanche”
◦ Overall gain is M pairs generated for each pair created optically
1
M≈
1 − (vd/VBR)n
where vd = reverse bias voltage, VBR = breakdown voltage, and n > 1
 Avalanche multiplication creates excess noise
 Scales nonlinearly with M , while the signal scales linearly
 Therefore there’s an optimal value, Mopt
◦ Typically 3
Mopt
9

Much better signal-to-noise ratio than with external amplification
• Typical sensitivities for a BER of 10−10 are −32 dBm at a bit rate B = 2.5
Gb/s, or −22 dBm at a bit rate B = 10 Gb/s


c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School of
Engineering & Computer Science

OPTICAL RECEIVERS (1)

• Block diagram of a digital optical receiver

Vertical dashed lines separate various functional units of the receiver

Govind P. Agrawal, Fiber-Optic Communication Systems, 2nd Edition, Fig. 4.11

 The University of Texas at Dallas Erik Jonsson School of
Engineering & Computer Science

OPTICAL RECEIVERS (2)

• Front end

High-impedance preamplifier
◦ Bandwidth is
1
∆f =
2πRLCT
where CT = total capacitance and load impedance RL  Rs
◦ Conflicting design goals: RL must be high for high sensitivity, but must
be low for high bandwidth

Transimpedance preamplifier
◦ High sensitivity and high bandwidth

c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School of
Engineering & Computer Science

OPTICAL RECEIVERS (3)

• Equivalent circuits for optical receiver front ends

(a) High-impedance
(b) Transimpedance

Govind P. Agrawal, Fiber-Optic Communication Systems, 2nd Edition, Fig. 4.12

 The University of Texas at Dallas Erik Jonsson School of
Engineering & Computer Science

OPTICAL RECEIVERS (4)

• Linear channel

Transfer function
Hout(ω) = HT (ω)Hp(ω)
◦ HT = transfer function of linear channel
◦ Hp = transfer function of photodetector

Intersymbol interference (ISI) occurs if the time-domain output signal for
a “one” bit extends beyond the bit-slot boundaries
◦ To minimize ISI, try to ensure that Hout is the transfer function of a
raised-cosine filter,


1
2 [1 + cos(ω/2B)], if ω < 2πB;
Hout(ω) =
0, if ω ≥ 2πB

c C. D. Cantrell (07/2002)
 The University of Texas at Dallas Erik Jonsson School of
Engineering & Computer Science

OPTICAL RECEIVERS (5)

• Data recovery

Clock recovery
◦ Purpose: Isolate a spectral component at the line rate of the signal
(f = B) in order to synchronize the sampling times with the bit slots
of the received bit stream
 For RZ, can pass the signal through a narrow bandpass filter
 For NRZ, have to square and rectify the signal spectral component
at f = B/2
 The spectral component recovered from the signal is used in a phase-
locked loop to control the frequency of a local oscillator in such a way
that there is negligible drift when some data transitions are absent
 Frequency recovery is not enough; one must also have an edge detector

Decision circuit
◦ Compares the sampled linear-channel output to a threshold level


c C. D. Cantrell (10/2002)
 The University of Texas at Dallas Erik Jonsson School of
Engineering & Computer Science

PHASE-LOCKED CLOCK RECOVERY CIRCUIT

• Block diagram for phase-locked clock recovery

LPF = low-pass filter

VCO = voltage-controlled oscillator


= multiplier
◦ Produces an error voltage at the difference frequency between the edge
detector and the VCO, which is fed back to control the VCO

Behzad Razavi, Monolithic Phase-Locked Loops and Clock Recovery Circuits, Theory and Design (IEEE Press, 1996)
 The University of Texas at Dallas Erik Jonsson School of
Engineering & Computer Science

OPTICAL RECEIVERS (6)

• Features and impairments of real receivers

Noise ⇒ vertical eye closure and increased bit error rate
◦ Electronic noise sources
 Thermal noise (mostly from the preamplifier)
 Shot noise
◦ Fluctuations in APD gain also contribute noise
◦ Noise is discussed in greater detail in another section of the course

Dark current

Timing jitter ⇒ horizontal eye closure and increased bit error rate
◦ Caused by imperfect clock recovery

c C. D. Cantrell (10/2002)
 Product Bulletin

ERM 577
2.5 Gb/s High Gain
Avalanche Photodiode
Optical Receiver Modules

Specifications EPITAXX ERM 577 series are high gain, high

Conditions (unless noted): bandwidth, differential output, Avalanche
Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vss = -5.2V Photodiode (APD) receivers with GaAs
All specifications without connector.
transimpedance amplifiers. The high gain of the
Parameter Measurement Min Typ Max Units receivers provides system designers with a large
Conditions output at low optical power levels. Also, the
Sensitivity 2.5 Gb/s -34 -32 dBm differential output can be used for added gain or
1E-10 BER for signal monitoring.
RAPD = 8.5 A/W
Small Signal Single-ended 30 50 kV/W
Gain f = 1.2 GHz Key Features
RAPD = 8.5 A/W
Bandwidth RAPD = 2.5 1.5 1.8 GHz Electro-optical
to 10 A/W • InGaAs photodiode with Transimpedance
Overload RAPD = 2.5 A/W -7.0 -3.0 dBm Amplifiers
Optical Back -40 -30 dB • High gain: 50,000 V/W typical
Reflection
• High dynamic range: 31 dB typical
Output Impedance Single-ended 50 Ω
Maximum Output Single-ended 550 mV
• Low dark current: 10 nA typical
Voltage Voltage (p-p) (p-p) Packaging
• 14-pin butterfly with single mode 900 µm loose
jacketed fiber pigtail
or
AMG package with single mode 900 µm loose
jacketed fiber pigtail
• Both packages available with LC, SC or FC
connectors

Applications
• High sensitivity digital receivers
• Long haul SONET/SDH receivers
ERM 577 2.5 Gb/s High Gain | 2
Avalanche Photodiode Optical Receiver Module

DC Electrical Characteristics Mechanical Dimensions - ERM 577

Parameter Measurement Min Typ Max Units All dimensions in mm (nominal)
Conditions
APD Breakdown Id = 10 µA 40 50 70 V 22.53

Voltage, Vb 1.91

APD Responsivity 1 µW Optical 8.5 A/W

RAPD Power,
VAPD = Vb -1.5 Pin Configuration 7 1
1 - Gnd
Dark Current VAPD = Vb -1.5 10 40 nA 2 - VPD (Bias: +)
3 - Gnd TOP VIEW
Thermistor 3 kΩ 4 - V supply (-5.2 V)
19.0

Supply Voltage (-) -4.95 -5.2 -5.45 V 5 - Gnd

6 - Thermistor
Supply Current 130 mA 7 - Gnd
8 14

8 - Gnd
Note: APD breakdown voltage is equal to Vb 10.0 min
9 - Gnd
10 - Output (inverted)
11 - Output (non-inverted) 2.54
1.25 meters
12 - Gnd Gold Plated Kovar 25.4
Maximum Ratings 13 - NC
14 - NC 7.60
3.71
Parameter Min Typ Max Units 0.9 O.D. Fiber

Detail A
Operating Temperature 0 70 °C 0.39 ±0.05 Pins 8 through 14 shown.
Pins 1, 3, 5, 7, 8, 9 and 12
Storage Temperature -40 85 °C 0.25 ±0.04
grounded through device
package as shown.
Supply Voltage (-) -6 VDC
APD Supply Voltage Vb V
Optical Input Power 1.0 mW

Ordering Information Mechanical Dimensions - ERM 577AMG

Product Model Description All dimensions in mm (nominal)
ERM 577 2.5 Gb/s APD, 14-pin Butterfly
900 µm buffer without connector
7.98
5.13
ERM 577AMG 2.5 Gb/s APD, AMG Package 3.71
Gold Plated Kovar
900 µm buffer without connector 1.04 8 14
See Detail A
1.25 meters
22.53 22.5
Pins 8 through 14 shown.
ERM 577xxx FJS LC/SPC 900 µm buffer with LC/SPC connector Pins 1, 3, 5, 7, 8, 9, 12 and 14 1.91 15.24 13.1
grounded through device RIGID
ERM 577xxx FJS SC/SPC 900 µm buffer with SC/SPC connector package as shown.

ERM 577xxx FJS SC/APC 900 µm buffer with SC/APC connector 8 14

ERM 577xxx FJS FC/SPC 900 µm buffer with FC/SPC connector 4.50
Pin Configuration
ERM 577xxx FJS FC/APC 900 µm buffer with FC/APC connector 1 - Gnd 25.35 12.70 BOTTOM VIEW
2 - VPD (Bias: +) 19.05
0.9 O.D. Fiber
3 - Gnd
4 - V supply (-5.2 V) 3.17 7 1
5 - Gnd
M3 x 0.5
6 - Thermistor 2.54 DEEP
7 - Gnd 4 PLCS
2.54 12.70
8 - Gnd
9 - Gnd Detail A
10 - Output (inverted)
0.39 ±0.05
11 - Output (non-inverted)
12 - Gnd
0.25 ±0.04
13 - NC
14 - Gnd
ERM 577 2.5 Gb/s High Gain | 3
Avalanche Photodiode Optical Receiver Module

Figure 1 Figure 2

Typical Eye Diagram Typical Eye Diagram

Optical Power = -32 dBm Optical Power = -3 dBm
100.5mV 500.5mV

20mV 100mV
/div. /div.

trig'd. trig'd.

T T

-500mV
-99.5mV 55.61ns 100ps/div 56.61ns
55.61ns 100ps/div 56.61ns

Figure 3 ERM 577 Application Circuit

VSS
0.033µF//10µF
ERM 577 Typical Transfer Function
600 4

500
Output Voltage (mV)

400 0.1µF 10 To Post-amp

TIA or
300 Clock Data
P 11
0.1µF Recovery
APD
200

100
ERM577
0 2
0 20 40 60 80 100 0.033µF//10µF

Optical Power (µW)

VAPD
ERM 577 2.5 Gb/s High Gain
Avalanche Photodiode Optical Receiver Module
Precautions for Use
ESD protection is imperative. Use of grounding straps,
anti-static mats, and other standard ESD protective
equipment is recommended when handling or testing
an InGaAs PIN or any other junction photodiode.
Soldering temperature of the leads should not exceed
260 oC for more than 10 seconds.
Fiber feed through tube temperature should not exceed
120 oC.
Fiber pigtails should be handled with less than 10 N pull
and with a bending radius greater than 1“.
JDS Uniphase Corporation Tel 609 538-1800
EPITAXX Division Fax 609 538-1684
7 Graphics Drive epitaxx@us.jdsuniphase.com
West Trenton, NJ 08628 www.jdsuniphase.com
| 4
Quality Vision
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industry with a vision for excellence in quality. The division is
committed to providing customers with the highest levels of
quality and reliability in design and manufacturing. The top
priorities remain continuous process improvement and total
customer satisfaction. EPITAXX obtained ISO 9001 certification
in 1996 for both design and manufacturing operations. In
addition, EPITAXX maintains a strict quality control program
to ensure that all products meet or surpass customer require-
ments.
All information contained herein is proprietary and confidential, believed to be accurate and is subject to
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available. Please contact JDS Uniphase, EPITAXX Division, for more information. ©JDS Uniphase Corporation.
All rights reserved. 08/13/00 Printed in USA