AON6912A

30V Dual Asymmetric N-Channel MOSFET

General Description Product Summary

The AON6912A is designed to provide a high efficiency Q1 Q2

synchronous buck power stage with optimal layout and VDS 30V 30V
board space utilization. It includes two specialized ID (at VGS=10V) 34A 52A
MOSFETs in a dual Power DFN5x6 package. The Q1
RDS(ON) (at VGS=10V) <13.7mΩ <7.3mΩ
"High Side" MOSFET is designed to minimize switching
losses. The Q2 "Low Side" MOSFET is designed for low RDS(ON) (at VGS = 4.5V) <19.3mΩ <10.4mΩ
RDS(ON) to reduce conduction losses. The AON6912A is
well suited for use in compact DC/DC converter 100% UIS Tested
applications.
100% Rg Tested

DFN5X6
Top View Bottom View

PIN1
Top View Bottom View

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max Q1 Max Q2 Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 34 52
ID
Current TC=100°C 21 33 A
Pulsed Drain Current C IDM 85 130
Continuous Drain TA=25°C 10 13.8
IDSM A
Current TA=70°C 8 10.8
C
Avalanche Current IAS, IAR 22 28 A
Avalanche Energy L=0.1mH C EAS, EAR 24 80 mJ
TC=25°C 22 30
B
PD W
Power Dissipation TC=100°C 9 12
TA=25°C 1.9 2.1
PDSM W
Power Dissipation A TA=70°C 1.2 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2 Units
Maximum Junction-to-Ambient A t ≤ 10s 29 24 35 29 °C/W
AD RθJA
Maximum Junction-to-Ambient Steady-State 56 50 67 60 °C/W
Maximum Junction-to-Case Steady-State RθJC 4.5 3.5 5.5 4.2 °C/W

Rev1: Mar. 2011 www.aosmd.com Page 1 of 10

 AON6912A

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 1.9 2.5 V
ID(ON) On state drain current VGS=10V, VDS=5V 85 A
VGS=10V, ID=10A 9.8 13.7
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 14.5 21.5
VGS=4.5V, ID=10A 12.9 19.3 mΩ
gFS Forward Transconductance VDS=5V, ID=10A 45 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 25 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 610 760 910 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 88 125 160 pF
Crss Reverse Transfer Capacitance 40 70 100 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.8 1.6 2.4 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 11 14 17.0 nC
Qg(4.5V) Total Gate Charge 5 6.6 8.0 nC
VGS=10V, VDS=15V, ID=10A
Qgs Gate Source Charge 2.4 nC
Qgd Gate Drain Charge 3 nC
tD(on) Turn-On DelayTime 4.4 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.5Ω, 9 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 17 ns
tf Turn-Off Fall Time 6 ns
trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 5.6 7 8.4 ns
Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 6.4 8 9.6 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev1: Mar. 2011 www.aosmd.com Page 2 of 10

 AON6912A

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 30
10V 4.5V 4V VDS=5V
6V
50 25

40 20
3.5V
ID (A)

ID(A)
30 15

20 10
125°C
VGS=3V
10 5 25°C

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

18 1.8
Normalized On-Resistance VGS=10V
16 ID=10A
1.6
14 VGS=4.5V
Ω)
RDS(ON) (mΩ

1.4 17
12
5
VGS=4.5V
1.2
ID=10A
2
10
10
VGS=10V
8 1

6 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) 18
Figure 4: On-Resistance vs. Junction Temperature
(Note E)

30 1.0E+02

1.0E+01
25 ID=10A
1.0E+00
40
Ω)

20
RDS(ON) (mΩ

1.0E-01
IS (A)

125°C
1.0E-02
15 125°C
1.0E-03
10 25°C
1.0E-04
25°C
1.0E-05
5
0.0 0.2 0.4 0.6 0.8 1.0 1.2
2 4 6 8 10
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev1: Mar. 2011 www.aosmd.com Page 3 of 10

 AON6912A

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=15V
ID=10A
1000
8
Ciss

Capacitance (pF)
800
VGS (Volts)

6
600
4
400

2 Coss
200

Crss
0 0
0 2 4 6 8 10 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

100.0 160 TJ(Max)=150°C

10µs TC=25°C
RDS(ON)
Power (W)

limited
ID (Amps)

10.0 120
100us

1.0 DC 1ms 80

TJ(Max)=150°C
0.1 40
TC=25°C

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

1 RθJC=5.5°C/W

0.1

PD
0.01
Ton
T
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON6912A

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 25
IAR (A) Peak Avalanche Current

TA=25°C 20

Power Dissipation (W)

TA=100°C
15

TA=150°C
10
TA=125°C

10 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150
Time in avalanche, tA (s) °C)
TCASE (°
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)

40 10000

35 TA=25°C
30 1000
Current rating ID(A)

25 17
Power (W)

100
5
20
2
15 10
10 10

0 1
0 25 50 75 100 125 150 0.00001 0.001 0.1 10 0 1000
°C)
TCASE (° Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=67°C/W 40

0.1

0.01
Single Pulse

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev1: Mar. 2011 www.aosmd.com Page 5 of 10

 AON6912A

Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 1.9 2.5 V
ID(ON) On state drain current VGS=10V, VDS=5V 130 A
VGS=10V, ID=20A 6.1 7.3
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 8.5 10.2
VGS=4.5V, ID=20A 8.3 10.4 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 60 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 35 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 870 1090 1300 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 340 490 640 pF
Crss Reverse Transfer Capacitance 22 38 53 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.4 0.9 1.4 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 12 16 20 nC
Qg(4.5V) Total Gate Charge 5 7 9 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 2 2.5 3 nC
Qgd Gate Drain Charge 1.5 2.5 3.5 nC
tD(on) Turn-On DelayTime 5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 2 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 16 ns
tf Turn-Off Fall Time 2 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 10 13 16 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 20 25 30 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev1: Mar. 2011 www.aosmd.com Page 6 of 10

 AON6912A

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 50
10V
4.5V 4V VDS=5V
80 40

60 3.5V 30
ID (A)

ID(A)
40 20
125°C

20 10
VGS=3V 25°C

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

15 1.6
VGS=10V
Normalized On-Resistance
12 ID=20A
VGS=4.5V 1.4
Ω)
RDS(ON) (mΩ

9
17
1.2 VGS=4.5V 5
6 ID=20A 2
VGS=10V 10
1
3

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

30 1.0E+02
ID=20A
25 1.0E+01
40
1.0E+00
20
Ω)

125°C
RDS(ON) (mΩ

1.0E-01
IS (A)

15 125°C
1.0E-02
25°C
10
1.0E-03

5 1.0E-04
25°C

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev1: Mar. 2011 www.aosmd.com Page 7 of 10

 AON6912A

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1800

1600
VDS=15V
8 ID=20A 1400
Ciss

Capacitance (pF)
1200
VGS (Volts)

6
1000

800
4
600
Coss
2 400

200 Crss

0 0
0 3 6 9 12 15 18 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

100.0 160
10µs TJ(Max)=150°C
RDS(ON)
TC=25°C
limited
100µs
Power (W)
ID (Amps)

10.0 120

DC 1ms
1.0 10ms 80

TJ(Max)=150°C
0.1 40

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Case (Note F)
Operating Area (Note F)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJC=4.2°C/W 40

0.1

Single Pulse
PD
0.01
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev1: Mar. 2011 www.aosmd.com Page 8 of 10

 AON6912A

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 35
IAR (A) Peak Avalanche Current

TA=25°C
30

Power Dissipation (W)

TA=100°C
25
TA=125°C
20

TA=150°C 15

10

10 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150
Time in avalanche, tA (s) °C)
TCASE (°
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)

60 10000

50 TA=25°C
1000
Current rating ID(A)

40
17
Power (W)

100
5
30
2
20
10
10
10

0 1
0 25 50 75 100 125 150 0.00001 0.001 0.1 10 0 1000
°C)
TCASE (° Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance

1 RθJA=60°C/W 40

0.1

PD
0.01

Ton
Single Pulse T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)

Rev1: Mar. 2011 www.aosmd.com Page 9 of 10

 AON6912A

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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