Professional Documents
Culture Documents
احمد سمير عبد المعطي حسن احمد رفعت السيد عمي المواردي
احمد محمود السيد احمد احمد فخري محمد صبح خميل صبح
عصام فوزي محمود البشبيشي تبارك احمد فوزي عبد العزيز مدكور
محمد جمال حسن بدران عجوه كريم عبد الجواد محمد البدوي
محمد محسن عبد الفتاح ابوحسين محمد رضا محمد ابو جمره
Chapter 1:
1. Modeling techniques. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1. 1 Introduction: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.2 What is modeling? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.3 What programs are used for modeling? . . . . . . . . . . . . . . 4
1.5 Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
1.6 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Chapter 2:
2. Power Electronic | Overview . . . . . . . . . . . . . . . . . . . . . . . . . 30
2.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Chapter 3:
3. Modeling of power electronic devices used for connect grid
with PV modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.2 Circuit components for efficient electronic power conversion? .
..................................................
3.5 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Chapter 4:
4. Solar Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.2 Solar Irradiance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.3 Types PV Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Chapter 5:
Chapter 1
Modeling techniques
1. 1 Introduction:
Why Simulate?
There is a wide variety of reasons for under taking simulations of software
process models.
In many cases, simulation is an aid to decision making.
It also helps in risk reduction, and helps management at the strategic,
tactical, and Operational levels.
1. strategic management
2. planning
3. control and operational management
4. process improvement and technologyadoption
5. understanding
6. training and learning
When developing software process simulation models, identifying the
purpose and the questions issues management would like to address is central to
defining the model scope and data that need to be collected.
In the following paragraphs, examples of practical questions and issues
that can be addressed with simulation are presented for each of these six
Purpose categories. Simulation can help with training and learning about
software processes in several ways. Although this purpose cluster is closely
related to that of “Understanding”, the particular setting envisioned here is an
explicitly instructional one.
Simulations provide a way for personnel to practice / learn project
management; this is analogous to pilots practicing on flight simulators.
A simulated environment can help management trainees learn the likely impacts
of common decisions (often mistakes),
e.g., rushing into coding, skipping inspections, or reducing testing time.
Finally, training through participation in simulations can help people to accept
the unreliability of their initial expectations about the results of given actions;
1.3.1 SPICE:
Simulation has, therefore, become a part of several power electronics
courses. SPICE is fitted with physical models of semiconductors and switching
devices. Physical modeling produces well-detailed results, but leads to high
calculation effort and often introduces convergence problems during transient
simulation (SPICE has 86% success rate). To overcome these convergence
problems, the power semiconductors are usually fitted with suitably designed
snubbers. Students and teachers are, therefore, committed to solving the
convergence problems and to reducing the computing time and memory needed,
both time consuming tasks, with suitable snubber circuits and device values.
It is able to perform the time-domain, steady-state behavior and transient
analysis needed to study most power electronic circuits. However, some built-in
capabilities of SPICE, such as dc operating point and small signal ac frequency
analysis, are not usable for power converters. SPICE ac frequency analysis does
not provide the dynamic transfer functions of power converters, because of the
switching operation of the power semiconductors. Therefore, two simulation
packages are often needed. Furthermore, because of the huge amount of memory
and CPU time required to converge problems, SPICE cannot easily handle the
usually long, transient analysis behavior of complex switching converter
topologies.
Since most physical details are not needed in the study of power
electronics, some well-known authors have used macro models of the
semiconductor switching devices to improve convergence and increase
simulation speed
1.3.3 EMTP:
1.3.4 CASPOC:
Physical setup:
For this example, we will assume the following values for the physical
parameters:
Moment of inertia of the rotor (J) = 0.01 kg.m^2/s^2
Damping ratio of the mechanical system (b) = 0.1 Nms
Electromotive force constant (K= Ke=Kt) = 0.01 N m/Amp
Electric resistance (R) = 1 ohm
Electric inductance (L) = 0.5 H
Input (V): Source Voltage
Output (theta): position of shaft the rotor and shaft are assumed to be rigid
The motor torque, T, is related to the armature current, i, by a constant factor Kt.
The back emf, e, is related to the rotational velocity by the following equations:
T = Kt i
𝒅𝜽
𝒆 = 𝑲𝒆
𝒅𝒕
This system will be modeled by summing the torques acting on the rotor
inertia and integrating the acceleration to give the velocity. Also, Kirckoff's laws
will be applied to the armature circuit.
First, we will model the integrals of the rotational acceleration and of the rate of
change of armature current.
𝑑2𝜃 𝑑𝜃
=
𝑑𝑡 2 𝑑𝜃
𝑑𝑖
=𝑖
𝑑𝑡
Insert an Integrator block (from the linear block library) and draw lines
to and from its input and output terminals.
Label the input line "d2/dt2 (theta)" and the output line "d/dt(theta)" as
shown below. To add such a label, double click in the empty space just
above the line.
Insert another Integrator block above the previous one and draw lines to
and from its input and output terminals.
Label the input line "d/dt (I)" and the output line "I".
Next, we will start to model both Newton's law and Kirchoff'’s law. These laws
applied to the motor system give the following equations:
𝑑2𝜃 𝑑𝜃 𝑑2𝜃 1 𝑑𝜃
𝐽 2 =𝑇−𝑏 → = 𝐾𝑡 𝑖 − 𝑏
𝑑𝑡 𝑑𝑡 𝑑𝑡 2 𝐽 𝑑𝑡
𝑑𝑖 𝑑𝑖 1 𝑑𝜃
𝐿 = −𝑅𝑖 + 𝑉 − 𝑒 → = −𝑅𝑖 + 𝑉 − 𝐾𝑒
𝑑𝑡 𝑑𝑡 𝐽 𝑑𝑡
The angular acceleration is equal to 1/J multiplied by the sum of two terms (one
pos., one neg.). Similarly, the derivative of current is equal to 1/L multiplied by
the sum of three terms (one pos., two neg.).
Insert two Gain blocks, (from the Linear block library) one attached to
each of the integrators.
Edit the gain block corresponding to angular acceleration by double-
clicking it and changing its value to "1/J".
Change the label of this Gain block to "inertia" by clicking on the word
"Gain" underneath the block.
Similarly, edit the other Gain's value to "1/L" and it's label to
Inductance.
Insert two Sum blocks (from the Linear block library), one attached by
a line to each of the Gain blocks.
Edit the signs of the Sum block corresponding to rotation to "+-" since
one term is positive and one is negative.
Edit the signs of the other Sum block to "-+-" to represent the signs of
the terms in Kirchhoff's equation.
Now, we will add in the torques which is represented in Newton's equation.
First, we will add in the damping torque.
Insert a gain block above the inductance block, and flip it left-to-right.
Set the gain value to "R" and rename this block to "Resistance".
Tap a line (hold Ctrl while drawing) off the current integrator's output
and connect it to the input of the resistance gain block.
Draw a line from the resistance gain output to the upper negative input
of the current equation Sum block.
Insert a gain block attached to the other negative input of the current
Sum block with a line.
Edit its value to "K" to represent the motor constant and Label it "Ke".
Tap a line off the rotational integrator output and connect it to the Ke
gain block.
The third voltage term in the Kirchoff equation is the control input, V. We will
apply a step input.
Insert a Step block (from the Sources block library) and connect it with
a line to the positive input of the current Sum block.
To view the output speed, insert a Scope (from the Sinks block library)
connected to the output of the rotational integrator.
To provide a appropriate unit step input at t=0, double-click the Step
block and set the Step Time to "0".
Open-loop response:
J=0.01;
b=0.1;
K=0.01;
R=1;
L=0.5;
Run the simulation (Ctrl-t or Start on the Simulation menu). When the
simulation is finished, double-click on the scope and hit its autoscale button.
You should see the following output.
Example 2: DC Motor Position Modeling in Simulink
Physical setup:
A common actuator in control systems is the DC motor. It directly provides
rotary motion and, coupled with wheels or drums and cables, can provide
transitional motion. The electric circuit of the armature and the free body
diagram of the rotor are shown in the following figure:
For this example, we will assume the following values for the physical
parameters. These values were derived by experiment from an actual motor in
Carnegie Mellon's undergraduate controls lab.
The motor torque, T, is related to the armature current, i, by a constant factor Kt.
The back emf, e, is related to the rotational velocity by the following equations:
𝑇 = 𝐾𝑡 𝐼
𝑑𝜃
𝑒 = 𝐾𝑒
𝑑𝑡
This system will be modeled by summing the torques acting on the rotor
inertia and integrating the acceleration to give the velocity, and integrating
velocity to get position. Also, Kirchhoff's laws will be applied to the armature
circuit. Open Simulink and open a new model window. First, we will model the
integrals of the rotational acceleration and of the rate of change of armature
current.
𝑑2𝜃 𝑑𝜃
= = 𝜃
𝑑𝑡 2 𝑑𝑡
𝑑𝑖
=𝑖
𝑑𝑡
Insert an Integrator block (from the linear block library) and draw lines
to and from its input and output terminals.
Label the input line "d2/dt2 (theta)" and the output line "d/dt (theta)" as
shown below. To add such a label, double click in the empty space just
above the line.
Insert another Integrator block attached to the output of the previous
one and draw a line from its output terminal.
Label the output line "theta".
Insert a third Integrator block above the first one and draw lines to and
from its input and output terminals.
Label the input line "d/dt(I)" and the output line "I".
Next, we will start to model both Newton's law and Kirchhoff's law. These laws
applied to the motor system give the following equations:
𝑑2𝜃 𝑑𝜃 𝑑2𝜃 1 𝑑𝜃
𝐽 2 =𝑇−𝑏 → = 𝐾 𝑖 − 𝑏
𝑑𝑡 𝑑𝑡 𝑑𝑡 2 𝐽 𝑡 𝑑𝑡
𝑑𝑖 𝑑𝑖 1 𝑑𝜃
𝐿 = −𝑅𝑖 + 𝑉 − 𝑒 → = −𝑅𝑖 + 𝑉 − 𝐾𝑒
𝑑𝑡 𝑑𝑡 𝐽 𝑑𝑡
The angular acceleration is equal to 1/J multiplied by the sum of two terms (one
pos., one neg.). Similarly, the derivative of current is equal to 1/L multiplied by
the sum of three terms (one pos., two neg.).
Insert two Gain blocks, (from the Linear block library) one attached to
each of the leftmost integrators.
Edit the gain block corresponding to angular acceleration by double-
clicking it and changing its value to "1/J".
Change the label of this Gain block to "inertia" by clicking on the word
"Gain" underneath the block.
Similarly, edit the other Gain's value to "1/L" and it's label to
Inductance.
Insert two Sum blocks (from the Linear block library), one attached by
a line to each of the Gain blocks.
Edit the signs of the Sum block corresponding to rotation to "+-" since
one term is positive and one is negative.
Edit the signs of the other Sum block to "-+-" to represent the signs of
the terms in Kirchhoff's equation.
Insert a gain block attached to the positive input of the rotational Sum
block with a line.
Edit it's value to "K" to represent the motor constant and Label it "Kt".
Continue drawing the line leading from the current integrator and
connect it to the Kt gain block.
Now, we will add in the voltage terms which are represented in Kirchoff's
equation. First, we will add in the voltage drop across the coil resistance.
Insert a gain block above the inductance block, and flip it left-to-right.
Set the gain value to "R" and rename this block to "Resistance".
Tap a line (hold Ctrl while drawing) off the current integrator's output
and connect it to the input of the resistance gain block.
Draw a line from the resistance gain output to the upper negative input
of the current equation Sum block.
Insert a gain block attached to the other negative input of the current
Sum block with a line.
Edit it's value to "K" to represent the motor constant and Label it "Ke".
Tap a line off the first rotational integrator's output (d/dt(theta)) and
connect it to the Ke gain block.
The third voltage term in the Kirchhoff equation is the control input, V. We will
apply a step input.
Insert a Step block (from the Sources block library) and connect it with
a line to the positive input of the current Sum block.
To view the output speed, insert a Scope (from the Sinks block library)
connected to the output of the second rotational integrator (theta).
To provide an appropriate unit step input at t=0, double-click the Step
block and set the Step Time to "0".
Open-loop response:
The physical parameters must now be set. Run the following commands at
the MATLAB prompt:
J=3.2284E-6;
b=3.5077E-6;
K=0.0274;
R=4;
L=2.75E-6;
Run the simulation (Ctrl-t or Start on the Simulation menu). When the
simulation is finished, double-click on the scope and hit its autoscale button.
You should see the following output.
1.6 Conclusion:
These chapter discuses why we use simulate what modeling mean and
provide programs used for modeling. We using “MATLAB simulink” and why
specifically use “MATLAB simulink” and applications by using “MATLAB
simulink” .
Chapter 2
The first electronics revolution began in 1948 with the invention of the
silicon transistor at bell telephone laboratories by Bardeen, Brattain, and
Shockley. Most of today's advanced electronic technologies are traceable to that
invention, and modern microelectronics has evolved over the years from these
silicon semiconductors. The second electronics revolution began with
development of a commercial the thyristor by the general electric company in
1958. That was the beginning of a new era of power electronics. Since then,
many different types of power semiconductor devices and conversion techniques
have been introduced. The demand for energy, particularly in electrical forms, is
ever-increasing in order to improve the standard of living.
The greater efficiency and tighter control features of power electronics are
becoming attractive for applications in motion control by replacing the earlier
electro-mechanical and electronic systems. Applications in power transmission
include high voltage Dc (HVDC) converter stations, flexible ac transmission
system (FACTS), and static VAR compensators. In power distribution these
include dc-to-ac conversion, dynamic filters, Frequency conversion and custom
power system.
control system
semiconductor switches
passive components
thermal management systems
packaging, protection devices
dc and ac disconnects, and enclosures
The power processor usually consists of more than power conversion stage, as
shown in figure. Most practical topologies require energy storage element
such as (capacitors and inductors), which also decouples the input and the
output side converters
(a) Residential
Refrigeration and freezers
Space heating
Air conditioning
Cooking
Lighting
(b) Commercial
Heating, ventilating, and air conditioning
Central refrigeration
Lighting
Elevators
(c) Industrial
Pumps
Compressors
Lighting
Industrial lasers
Induction heating
Welding
(d) Transportation
Traction control of electric vehicles
Electric locomotives
Feedwater pumps
(f) Aerospace
Space shuttle power supply systems
(g) Telecommunications
Battery chargers
The various semiconductor devices can be classified into three categories with
respect to the way they can be controlled
-uncontrolled
The on and off states of power switch are controlled by the power circuit .such
as Diode
-semi controlled
Latched on by a control signal but must be turned off by the power circuit .such
as Thyristor
-fully controlled
Turned on and off by control signals .such as the main kind of Transistors
Diode
Figure 2.5: (a) Diode symbol, (b) I-V characteristic, (c) idealized characteristic
Thyristors
The most popular types of the Thyristor family are the one known as the silicon
controlled thyristor (SCT). The circuit symbol and I_V characteristics are shown
in the figure .the main current flow from the anode A to the cathode K.
In its off state the thyristor can block a forward polarity voltage and not
conduct, as shown in the figure (b)
The thyristor can be triggered into the on state by applying a pulse of a positive
gate current for a short duration provided that the device is in its forward
blocking state the resulting I_V relationship is shown by the on state portion of
the characteristics shown in the figure (b) the forward voltage drop in the on
state is only a few volts (typically 1_3 volt) depending on the device blocking
voltage rating.
Figure 2.6: (a) Thyristor symbol, (b) I-V characteristic, (c) idealized characteristic
Controllable switches (Transistor)
In the cut –off region transistor is off, both junction (EB and CB) are reversed
biased. In the cut off state the transistor acts as an open switch between the
collector and emitter
In the Active region transistor acts as an amplifier (CB junction is reverse biased
and EB junction is forward biased)
In saturation region the transistor acts as a closed switch and both the
junctions CB and EB are forward biased
Transistors are of 2 types NPN and PNP transistor. The different configurations
are common base, common collector and common emitter common emitter
configuration is generally used in switching application.
IE =IC+IB
β=IC/IB
IC=β IB+ICE0
α=β/ (β+1)
0.99<α<1.0
β =α/ (1-α)
It has high input impedance. MOSFET is operated in two states (On State and
OFF State). Switching speed of MOSFET is very high. Switching time is of the
order of nanoseconds.
MOSFET is three terminal devices. There are gate (G), drain (D) and source(s).
-Depletion MOSFET.
-Enhancement MOSFETs.
Consists of a p-type silicon substrate with two highly doped n+ silicon for low
resistance connection. An n-channel is diffused between drain and source
IGBT has three terminals gate (g), collector(c) and emitter (e)
When an IGBT is turned off, it exhibits a "tail current" because holes are left in
the drift region. By adding an extra N+ buffer layer in what is known as"Punch-
Through" (PT) architecture, the trapped holes are quickly absorbed. Thus, the
PT IGBT switches faster, but typically handles less voltage than the NPT IGBT
Figure 2.13
IGBT features
IGBT combines the advantages of BJT's and MOSFET's features of IGBT are:
Block arbitrary large forward and reverse voltages with zero current flow
when off
conduct arbitrary large currents with zero voltages drop when on Switch
from on to off or vice versa instantaneously when triggered
Vanishingly small power required from control source to trigger the
switch
This is an important result because it shows that the switching power loss in a
semiconductor switch varies linearly with the switching frequency and the
switching times. Therefore if devices with short switching times are available, it
is possible to operate at high switching frequencies in order to reduce filtering
requirements and at the same time keep the switching power loss in the device
from being excessive.
The leakage current during the off-state (switch open) of controllable switches
is negligibly small and therefore the power loss during the off-state can be
neglected in practice.
Figure 2.17: (a) simplified damped inductive switching circuit, (b) switch
waveforms, (c) Instantaneous switch power loss
2.9 Power electronics example: switch mode dc power supply
In power electronics, the semiconductor devices are used as switches when the
device is on (approximating a closed switch) the voltage across the device is
very low (usually 1-3 volts maximum) and the current through it is large. The
power dissipation, while substantial, is much less than operating in the linear
amplification region at the same current level. When the device is off
(approximating an open switch) the voltage across the component is large but
the current is very small and the power dissipation in the off state can usually
be considered as zero. the above voltage regulation and electrical isolation are
achieved, for example by the circuit shown in Figure 2.18, in this system, the
utility input is rectified into a dc voltage V D , without a line frequency
transformer. By operating the transistor as a switch (either fully ON or fully
OFF) at some high switching frequency F S
with PV modules
3.1 Introduction
High efficiency is leads to low power loss with in converter Small size
and reliable operation is then feasible. Efficiency is a good measure of converter
performance.
𝑃𝑜𝑢𝑡
𝜂=
𝑃𝑖𝑛
𝟏
𝑷𝒍𝒐𝒔𝒔 = 𝑷𝒊𝒏 − 𝑷𝒐𝒖𝒕 = 𝑷𝒐𝒖𝒕( − 𝟏)
𝜼
DC Input AC Output
Desirable features
• Minimum weight, size, cost
• High reliability
In either event: 𝑃 𝑡 = 𝑣 𝑡 𝑖 𝑡 =0
Ideal switch consumes zero power
Power semiconductor devices (e.g. MOSFETs, diodes) operate as near
ideal power switches:
• When a power switch is ON, the voltage drop across it is relatively small
• When a power switch is OFF, the switch current is very close to zero
3.2.2 Capacitor
𝑑𝑣𝑐
𝐼𝑐 = 𝐶 𝑃 𝑡 = 𝑣𝑐 𝑡 𝑖𝑐 (𝑡)
𝑑𝑡 𝑐
𝑇
𝑣𝑐
1 𝐶 𝐶 2
𝑃𝑐 = 𝑃𝑐 𝑡 𝑑𝑡 = 𝑣𝑐 𝑡 𝑑𝑣𝑐 = (𝑣𝑐 𝑇 − 𝑣𝑐2 0 = 0
𝑇 𝑇 𝑣𝑐 2𝑇
0
𝟏 𝑻 𝑪 𝒗𝒄 (𝒕) 𝑪
𝑰𝒄 = 𝒊𝒄 𝒕 𝒅𝒕 = 𝒅𝒗𝒄 = 𝒗 𝑻 − 𝒗𝒄 𝟎 =𝟎
𝑻 𝟎 𝑻 𝒗𝒄 (𝟎) 𝑻 𝒄
3.2.3 Inductor
𝑑𝑖𝐿
𝑣𝑙 = 𝐿
𝑑𝑡
𝑃𝐿 𝑡 = 𝑣𝐿 𝑡 𝑖𝐿 (𝑡)
𝑻
𝟏 𝑳 𝒊𝑳 𝑻 𝑳 𝟐
𝑷𝑳 = 𝑷𝑳 𝒕 𝒅𝒕 = 𝒊𝑳 𝒕 𝒅𝒊𝑳 = 𝒊 𝑻 − 𝒊𝟐𝑳 𝟎 =𝟎
𝑻 𝑻 𝒊𝑳 𝑻 𝟐𝑻 𝑳
𝟎
𝟏 𝑻 𝑳 𝒊𝑳 𝑻 𝑳
𝑽𝑳 = 𝒗𝑳 𝒕 𝒅𝒕 = 𝒅𝒊𝑳 = 𝒊 𝑻 − 𝒊𝑳 𝟎 =𝟎
𝑻 𝟎 𝑻 𝒊𝑳 𝟎 𝑻 𝑳
Position 1
ic = - V/R
Small ribble approximation
VL = Vg
ic = - V/R
Position 2
Inductor voltage and capacitor current
VL = Vg - v
ic = iL- V/R
Small ribble approximation
VL = Vg - v
ic = I - V/R
D' = 1-D
Switching period 𝑇𝑠 = 10 𝜇s
Averaged (DC) model
Nolosses:
1 1
𝑉𝑜𝑢𝑡 = 𝑉 𝐼𝑔 = 𝐼
1−𝐷 𝑔 1 − 𝐷 𝑜𝑢𝑡
𝑉𝑔 𝐼𝑔 = 𝑉𝑜𝑢𝑡 𝐼𝑜𝑢𝑡
𝟏
𝜼=
𝑹𝒍 (𝑰𝒐𝒖𝒕 + 𝑰𝒔𝒘 )𝟐 𝑰𝒔𝒘
𝟏+ +
(𝟏 − 𝑫)𝟐 𝑽𝒐𝒖𝒕 𝑰𝒐𝒖𝒕 𝑰𝒐𝒖𝒕
𝑽𝑳 = 𝑽𝑫𝑪 − 𝒗𝒂𝒄
𝒊𝑳 = 𝒊𝒂𝒄
𝒊𝒊𝒏 = 𝒊𝑳
Position 2
𝑽𝑳 = −𝑽𝑫𝑪 − 𝒗𝒂𝒄
𝒊𝑳 = 𝒊𝒂𝒄
𝒊𝒊𝒏 = −𝒊𝑳
Inductor volt-second balance
𝑇𝑠
1
𝑉𝑙 = 𝑣𝐿 𝑡 𝑑𝑡 = 𝐷(𝑉𝐷𝐶 − 𝑣𝑎𝑐 ) + 1 − 𝐷 −𝑉𝐷𝐶 − 𝑣𝑎𝑐
𝑇𝑠
0
= 2𝐷 − 1 𝑉𝐷𝐶 − 𝑣𝑎𝑐 = 0
𝑣𝑎𝑐
𝑀 𝐷 = = 2𝐷 − 1
𝑉𝐷𝑐
−1 ≤ 𝑀(𝐷) ≤ 1
Control objectives:
• 𝐼𝑎𝑐 = 𝐼𝑀 sin (wt), in phase with AC line voltage 𝑉𝑎𝑐 (t)
• Amplitude 𝐼𝑀 (or RMS value) adjustable to controlpower delivered to the AC
line.
𝑉𝑎𝑐 𝑡 = 2𝑉𝑟𝑚𝑠 𝑠𝑖𝑛 𝜔𝑡
𝒊𝒂𝒄 𝒕 = 𝟐𝑰𝒓𝒎𝒔 𝒔𝒊𝒏( 𝝎𝒕)
𝒑𝒂𝒄 𝒕 = 𝒗𝒂𝒄 𝒊𝒂𝒄 = 𝒗𝒓𝒎𝒔 𝒊𝒓𝒎𝒔 (𝟏 − 𝒄𝒐𝒔(𝟐𝝎 𝒕))
𝒑𝒂𝒄 = 𝒗𝒓𝒎𝒔 𝒊𝒓𝒎𝒔
dcac_switching.mdl
Waveforms 𝑣𝑎𝑐 (t), 𝑖𝑎𝑐 (t), 𝑖𝑖𝑛 (t), and switch controlOver one AC line period
(1/60 s)
Input voltage 𝑉𝑑𝑐 = 200 V
Inductance L = 2 mH
AC: 120Vrms, 60Hz
𝐼𝐿 = 1 A
𝑃𝑎𝑐 = 360 W
With this simple controller frequency is variable
Solar energy
4.1 Introduction
Solar radiation received on earth in just one hour is more than what the
whole world's population consumes in one year.
The sun's heat and light provide an abundant source of energy that can be used
in many ways. Photovoltaic power systems convert sunlight into electricity
directly. Research and development efforts are under way to improve efficiency
and reduce cost of photovoltaic power systems in applications ranging from
roof-top residential to large industrial or electric utility sites.
In 1839, a young French physicist named Edmund Bacquerel discovered the
photovoltaic effect. While working with two metal electrodes in an electricity-
conducting solution, he noted that the apparatus generates voltage when exposed
to light.1 It was not until 1904, when Albert Einstein published a paper on the
photoelectric effect, that the general scientific community stopped looking at
photovoltaic as some type of scientific hoax.
The PV hierarchy is shown in Fig. 4.3. One solar cell has output voltage of
around 0.5-0.6 V and very few appliances work at this voltage so solar cells are
connected in series in a module to increase the output voltage of the module.
The number of cells in a module is governed by the voltage of the module.
Photovoltaic module manufacturers make modules which can work with 12 V
batteries. In allowing for some over-voltage to charge the battery and to
compensate for lower output under non standard test conditions (STC), modules
usually have 33-36 solar cells in series to ensure reliable operation.
To increase the modules output current the series strings of solar cells are
connected in parallel. Based on the desired current-voltage output of the module,
solar cells are connected in both parallel and series combination.
The modules can then in turn be connected in series and parallel to have the
desired PV system voltage and current. Such combinations of modules are
referred to as arrays.
4.2.2 PV Modules
PV modules or solar modules have dc electrical output power even though there
are no moving parts and no pollutants emitted. PV systems are modular which
gives it an advantage of being able to increase its size even after it has been
installed.
(i) Amorphous silicon modules: these are made from uncrystallized forms of
silicon. They are often called thin film silicon (TFS) modules as the silicon is
deposited in a thin layer or film on a variety of surfaces, such as glass. This type
of module is in a dark matt color and performs well in low light conditions.
However, this has low efficiencies (typically 5–8%) and thus requires a much
larger roof area than all other technologies.
(ii) Monocrystalline solar cells: these are thin wafer cut from a large single
crystal of silicon to form the individual cells and are bluish black in color. This
type of cell has the best efficiency for a given module area and well made
modules have a proven long life.
(iii) Polycrystalline solar cells: these are thin wafers cut from a block of multiple
crystal silicon. They are easily recognized by its color (usually blue), but there
are other colors also and this is the most common panels available from a range
of manufacturers.
In addition to this typical cosine loss of input radiation, large collector angles
lead to optical losses due to reflectance from the surface of PV modules. These
optical losses result in a lower incident radiation on the PV cell under the glass,
than an inclined surface, not normal to the incident radiation, receives a reduced
radiation density, due to geometric effects of the collector angle.For crystalline
silicon PV modules, the effect of optical losses is significant for angles of
incidence greater than 55.
4.2.4 Shading effects on PV modules
Since PV modules have around 33–36 cells in series, shading on just one cell in
this series of cells can have reduction in power output from the PV module.
The equivalent circuit for the PV cell is shown in Fig. 4.6 where the cell is
in full sunlight.
Fig. 4.7 (a) Equivalent circuit for nth cell in solar module to be shaded. The figure shows
typical solar output as a function of irradiation, (b) a typical power curve from a solar array.
The efficiency of the solar module reaches its peak at a unique point and this
point is called the maximum power point of the solar cell.
Figure 4.7 shows one of the cells shaded in a PV module of ncells. Rp and Rs are
the parallel leakage resistance and series resistance of a solar cell respectively.
When one of the cells in PV module is shaded the short circuit current (ISC)
through the shaded cell is zero and the diode becomes reverse biased hence the
current through the diode (Id) is zero. This results in the current produced by n −
1 cells in the PV module to pass through Rp and Rs which results in loss of
voltage. The drop in voltage (V) by the shaded cell is given by
Where V is the voltage output of PV module when all cells are in full sunlight.
Since Rp is much greater than Rs, Eq. simplifies to
𝑉
∆𝑉 ≅ + 𝐼𝑅𝑝
𝑛
When modules are connected in series and parallel combination it contains by-
pass and blocking diodes. These diodes protect the modules and prevent it from
acting as a load in the dark or during shading.
Charge controller as the name implies, controls the amount of charge that the
battery would receive. When the battery has reached its charging limit, the
charge controller will withhold further charging of the battery, sometimes
known as voltage regulating. The absence of this would lead to overcharging of
batteries, consequently damaging batteries and even causing fires.
Calculating the battery size:
In this step the number of days in a week where there is no sun is multiplied
with the total daily load and the battery losses is alsocatered for.
KCL:
𝑉𝐷
𝐼𝑆𝐶 − 𝐼𝐷 − − 𝐼𝑃𝑉 = 0
𝑅𝑃
Diode characteristic:
𝑉𝐷
𝐼𝐷 = 𝐼0 𝑒 𝑉𝑟 −1
KVL:
𝑉𝑃𝑉𝑐𝑒𝑙𝑙 = 𝑉𝐷 − 𝑅𝑠 𝐼𝑃𝑉
𝑉𝑃𝑉 = 𝑁𝑠 𝑉𝑃𝑉𝑐𝑒𝑙𝑙
Where,
𝐼𝑆𝐶 : Short-circuit current
𝐼𝑚𝑎𝑥 : Current at the maximum-power point
𝐼𝐷 : Diode current
𝑉𝑂𝐶 : Open-circuit voltage
𝑉𝑚𝑎𝑥 : Voltage at the maximum-power point
𝑃𝑚𝑎𝑥 : Power at the maximum-power point
𝑅𝑠 : Series resistance
𝑅𝑃 : Shunt resistance
𝑁𝑠 : Number of cells in series
A typical I-V characteristic of the solar cell
The fill factor is a measure of the real I-V characteristic. Its valued is higher than
0.7 for good cells. The fill factor diminishes as the cell temperature is increased.