Professional Documents
Culture Documents
Lecture 13 - MOS Capacitor PDF
Lecture 13 - MOS Capacitor PDF
MOS Capacitor
Solid State Device Fundamentals
Metal-Oxide-Semiconductor capacitor
MOS capacitor is the central part of semiconductor
field effect transistor.
Vg Gate
Vg
Vd
metal Source gate
Drain
SiO2 SiO2
N+ N+
Ec
N+polysilicon
Ec
P-Silicon body
SiO2
Ef , E c Ef
Ev
Ev
Gate Si
Body
Ev
No bias, Vg = 0
Ec, Ef Ec
Vfb Ef
Ev Ev
N+ -poly-Si 9 eV P-body
3.1eV Vg V fb s Vox
Vox
Ec , Ef s - surface potential, band
bending
Ev E0 Vox- voltage across the oxide
accumulation of holes
qVg q s Ec Since hole concentration is
high, the potential drop in
Ef
Ev semiconductor Φs is
negligible, thus:
M O S Vg V fb Vox
Solid State Device Fundamentals
Surface accumulation
Vg < Vfb
Vox Vg V fb
M O S
Qs Qdep qN aWdep
Vox
Cox Cox Cox
qN a 2 s s
2 ss Vox
Wdep Cox
qN a
Solid State Device Fundamentals
Surface depletion
qN a 2 s s
Vg V fb s Vox V fb s
Cox
kT N a Ev
st 2B 2 ln M O S
q ni
Eg kT N v kT N v kT N a
qB ( E f Ev ) bulk ln ln ln
2 q ni q N a q ni
Solid State Device Fundamentals
kT N a
At threshold, st 2B 2 ln
q ni
qN a 2 s 2B
Vox
Cox
qN a 2 s 2B
Vt Vg at threshold V fb 2B
Cox
Solid State Device Fundamentals
Threshold Voltage
Tox = 20nm
Vt (V), P+ gate/N-body
Body Doping Density (cm-3 )
(a)2 s 2 B
qN sub + for P-body,
Vt V fb 2 B – for N-body
Cox
Tox = 20nm
ody
ody
Solid State Device Fundamentals
Strong inversion
2 s 2B
Vg > Vt Wdep Wdmax
qN a Accumulation
of electrons
Ec
Vg > Vt
Ef
Ev
gate
++++++++++ qVg
SiO2
- - - - - - - - Ec, Ef
V - - - - - - -
Q dep Qinv Ev
P - Si substrate
M O S
Solid State Device Fundamentals
2B
Vg
accumulation Vfb Vt inversion
depletion
Wdep
Wdmax
Wdmax = (2s2B /qN a )1/2
(s)1/2
Vg
Vfb Vt inversion
accumulation depletion
Solid State Device Fundamentals
Summary
V fb g s (Qox / Cox )
Vg V fb s Vox poly
V fb s Qs / Cox poly
Solid State Device Fundamentals
Summary
st 2 B
kT N substrate
B ln
q ni
qN sub 2 s | st |
Vt V fb st
Cox
Flat-band
Vg=Vfb<0 Depletion Vg=Vfb>0
Ef V 0>V Vg0<Vfb Ef
g fb
Ef E
Eff Ef
Ef Ef
Depletion
Vg0>Vfb Vg0<Vfb
Threshold Vg=Vt <0
Vg=Vt>0
Ef Ef
Ef Ef Ef
Ef
Ef
Ef