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The great variety of results for phosphorus Table I. Preexponential Terms and Activation Energies for Diffusion of Cations
diffusion is probably due to’the fact that, in in Silicate Glasses
all instances but the present, measurements
of various sorts were made on oxidized sili- species DO E (J/molX Ref.
con. It is difficult to correlate these with P 5.73~ 2.30 4 (Sah et al.)
one another or with the present work. 6.39X lo-’’ 1.27 4 (Allen et al.)
The silicon diffusion was measured in a 1.9X10--9 1.1 4 (Li et al.) ’
bulk sample, and at least the value of E 4.72 4.21 4 (Thurston et al.)
(6X los J) seems reasonable. The value of 1.86X lo-’ 4.03 4 (Barry and Olofsen)
E (l.14X lo” J) found in the present in- 2.0x lo-’” 1.7 3
vestigation seems quite low for a network- 8X lo-’ 1.14 Present investigation
forming cation, being more in line with Si 3.28X 10’ 6 5
that found for monovalent modifiers‘ or P
in Na20-P2OS-SiO2glasses’ (Table 1). P in Na2O-P2OS-SiO2 5.2X lo-’ 0.96 7
As dramatic as is the change in profile
shape for the P20s-Si02core fiber, the use than hours as was observed on the fiber. diffusion under the same conditions is quite
of diffusion for profile modification has Changes in preform heating time as a result substantial. Phosphorus diffusion could be
limited applicability. A major problem is of modifications in the preform fabrication used to systematically change the profile
that, as found in the present study, the time- technique will not cause any significant shape in certain optical devices.
temperature conditions necessary for dif- change in profile shape through diffusion;
fusion of the phosphorus are similar to nor will there be any significant change REFERENCES
those for nucleation and crystal growth. during fiber drawing. However, heat treat- ‘H. S . Carslaw and J. C. Jaeger, Conduction of
Heat in Solids, 2d ed. Clarendon, Oxford, U.K.. 1962.
This result indicates that care must be taken ment of devices where diffusion distance is ,.I.Hersener and G. P. Huher, “Semiquantitative
to avoid devitrification of a device being short may have some application. X-Ray Microanalysis on Preforms for Optical Fibers,”
Electron. Lett., 20 [ 5 ] 208-209 (1984).
hcat-treated. Additionally, for many appli- 3 D . R . Campbell, E. I. Alessandrini, K . N. Tu,
cations it might be desirable to perform the SUMMARY and J. E. Lewis, “Phosphorus Diffusion in Partially
heat treatment on the preform from which A method of determining the diffusion Crystallized Films of SiO,,” J. Electrochem. Soc., 121
[8] 1081-85 (1974).
the device is to be made. Diffusion is not of elements used in the fabrication of light 4M. Ghezzo and D. M. Brown, “Diffusivity Sum-
sufficiently rapid to make this practical guides has been developed. It employs mary of B, Ga, P, As, and Sh in SiO,,” J. Electrochem.
Soc., 120, 146 (1973).
since the time necessary for diffusion is X-ray analysis to discern changes in chem- ’G. Brehec e f al., “Diffusion of Silicon in Amor-
related to the distance squared. For ex- ical profile shape. These data are fit to a phous Silica,” Acta Metall., 28 [ 3 ] 327-33 (1980).
6P. Winchell, “The Compensation of Law for Dif-
ample, the elimination of the dip shown in solution to Fick’s second law to yield fusion in Silicates,” High Temp. Sci., 1 , 200-15
Fig. 1 would take years of heat treatment of diffusion data. The data indicate that Ge (19691).
a standard preform on a lathe using a torch diffusion is very small in these character- P. 0. Perron and H. B. Bell, “Diffusion of Phos-
phorus and Sodium in Na,O-P,O,-SiO,, Liquids,”
producing a temperature of 2000°C rather istic light guide compositions and that P Trans. Br. Ceram. Soc., 66, 347 (1967). 0
500
200
-z
I
Y
.. .. .- 100
J . Am. Ceram. Soc., 68 [9] C-251-C-252 (1985) pendent on the concentration. At low water
concentrations, a concentration profile is
similar to a complementary error function
Concentration Dependence of the Diffusion profile expected for a constant diffusion co-
efficient, whereas at higher water concen-
Coefficient of Water in Si02Glass trations, a concentration profile approaches
the one expected from Eq. (3) (cf. Fig. 2).4
MINORUTOMOZAWA* One might argue that the equilibrium con-
Materials Engineering Department and Center for Glass Science and Technology, Rensselaer stant K in Eq. ( 2 ) may not be a strict con-
Polytechnic Institute, Troy, New York 12181 stant; instead it may be a function of water
concentration and this can account for the
The concentration dependence of water diffusion in SiOz glass was analyzed observed discrepancy. But in general, the
assuming that both molecular water and hydroxyl water can diffuse and that they best approximation to the constant equi-
are in equilibrium as interstitial and substitutional impurities. The equation ob- librium constant K is expected at low water
tained appears to be consistent with experimental observations of water diffusion concentration. Yet at this low concentration
in Si02 glass. the greatest deviation from the concen-
tration profile expected from Eq. (3) is
observed. It is the purpose of the present
report to formulate a realistic model of
HE DIFFUSION of water in S i 0 2 glass D, =2DHZo[-SiOH]/K water diffusion in SiO, glass which can
Tplays an important role in the chemical account for the observed discrepancy.
=2DH,,[H,0]/[-SiOH] (3)
and mechanical properties of the glass as In the molecular water diffusion
well as in the oxidation of silicon. Water where DH20 is the diffusion coefficient of mechanism suggested by Doremus,’ it is
can exist in glass both as hydroxyl (-SOH), molecular water. This model was success- assumed that only the concentration gra-
and molecular water (HzO). Both types of fully used to analyze the concentration dient of the molecular water causes the
water are believed to be in equilibrium by profile of water in Si02 glass’ as well as diffusion flux of water. And the molecu-
the oxidation of s i l i c ~ n .The
~ , ~ overall be- lar water is assumed to diffuse by an inter-
HzO+-Si-O-Si-~-SiOH+-SiOH (1) havior of water diffusion in SiO, glass can stitial mechanism in a similar manner to
with the equilibrium constant therefore be explained satisfactorily by noble gases in glass until it reacts with
this mechanism. the Si-0-Si network.
K=[-SiOHI2/[H,O] (2) When closely examined, however, It is suggested here that water can
where [-SiOHj and [H20j are the concen- some discrepancies exist between experi- diffuse through the motion of -SOH in
trations of hydroxyl and molecular water, mental results and the theory based on this addition to the motion of molecular water.
respectively. When the total water concen- mechanism. For example, according to this This possibility was suggested earlier by
tration is low, most of the water is in the model, the diffusion coefficient is linearly Roberts and R ~ b e r t s When
.~ water can
-SOH state. Among the various suggested proportional to the concentration of -SOH diffuse through the motion of -SOH also,
mechanisms of water diffusion in glass, the or approximately to the total water concen- the concentration gradient of -SOH, in ad-
molecular water diffusion mechanism sug- tration and should extrapolate to zero for dition to the concentration gradient of mo-
gested by Doremus‘ appears to be most SiOz glass with zero water content at all lecular water, becomes important in
plausible, giving a reasonable value of the temperatures. Consequently, the concen- water diffusion. Studies on diffusion using
activation energy and the concentration de- tration vs diffusion distance profile should isotope “0 show that the oxygen in -SiOH
pendent diffusion coefficient roughly con- have the same characteristic shape at all and H,O in glass can exchange easily. For
sistent with the experimental data. In this temperatures and concentrations. In reality example, the study on the diffusion of
mechanism the minority water component, the diffusion coefficient extrapolates, for H2% into S O z glass showed7 that the dif-
molecular water, diffuses and reacts with glass with zero water content, to nonzero fusion distance of water is much greater
the SiO, network by Eq. (1) to form im- values, which are dependent on tempera- than that of “0. A separate experiment on
mobile hydroxyl. The reaction is assumed t ~ r e Correspondingly,
.~ different concen- the diffusion of water into S O 2 glass con-
to be so fast that local equilibrium is estab- tration profiles are observed at different taining “0 also indicated* that the network
lished. This assumption leads to the effec- temperatures. Figure 14-6 shows that the oxygen can exchange with the oxygen from
tive diffusion constant D, of water given by concentration profile at a high temperature the molecular water by
is similar to the theoretical prediction by
Doremus, whereas the profile at low tem- Hz’60+-Si-180-Si- + -SiI60H
CONTRIBUTING
EDITOR--. C. BOYD
perature is closer to the one expected for +-Si’*OH+ H2180+-Si-’60-Si (4)
a constant diffusion coefficient. Further-
Received May 3, 1985; revised copy received This observation suggests that the follow-
June 13, 1985; approved June 13, 1985. more, the shape of the concentration profile
*Member, the American Ceramic Society. at low temperature was found to be de- ing diffusion mechanism is possible.