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inst rurnen ts
M. F. Doerner
IBM General Products Division. San Jose, Culifirnia YS193
Department of Materials Science and Engineering, Stanford University, Stanford, Colifornia 94305
W . D . Nix
Department of Materials Science and Engineering, Sranford University, Stanford, Ca&rniu 94305
(Received 4 February 1986; accepted 16 June 1986)
Depth-sensing indentation instruments provide a means for studying the elastic and plastic
properties of thin films. A method for obtaining hardness and Young’s modulus from the
data obtained from these types of instruments is described. Elastic displacements are
determined from the data obtained during unloading of the indentation. Young’s modulus
can be calculated from these measurements. In addition, the elastic contribution to the total
displacement can be removed in order to calculate hardness. Determination of the exact
shape of the indenter at the tip is critical to the measurement of both hardness and elastic
modulus for indentation depths less than a micron. Hardness is shown to depend on strain
rate, especially when the hardness values are calculated from the data along the loading
curves.
-2
}
1 Loading Coil
Capacitance
Displacement
GXE
tration of the indenter into the sample, a method for
determining the elastic and plastic contributions to the
displacement is required. A technique for subtracting
the elastic displacement from the total displacement to Table 1
obtain the hardness is proposed. Also, a method for re-
lating the elastic displacements to Young’s modulus of
I
the sample is described. These methods have been ap- FIG. 1 . Schematic diagram of the indenting mechanism of the Ncno-
plied to data obtained using a commercially available indenter.
I
indentation that occurs when the elastic displacements
ALUMINUM I are recovered.
LINEAR UNLOADING
c
IV. ELASTIC PROPERTIES
The slope of the unloading curve can be used as a
measure of the elastic properties of the sample. If the
area in contact remains constant during initial unload-
ing, the elastic behavior may be modeled as that of a
t blunt punch indenting an elastic solid. Loubet et aL2
adopted the solution of Sneddon6for the elastic defor-
---c_-
mation of an isotropic elastic material with a flat-ended
200 400 600 800 1000 1200
cylindrical punch. By equating the projected area in
DEPTH (nm) contact under the indenter to the area of the punch, they
FIG. 4. Indentation loading curve for pure ( 100) aluminum showing obtained for a Vickers indenter
linear unloading.
-=(+)
dP 1/2
DEE,,
dh
where
projected area in contact with the indenter. If the final
depth rather than the plastic depth is used, a significant
overestimate of the hardness will result due to the signif-
icant decrease in depth during elastic re~overy.~
and where dP /dh is the slope of the unloading curve, D
The plastic depth can be obtained from the load-
is the Vickers diagonal length, E and v are Young’s mo-
displacement curve in the following way. Referring to
dulus and Poisson’s ratio for the sample, and Eo and vo
Fig. 2, a line is fit tangent to the unloading curve at
are the same parameters for the indenter. If we assume
maximum load and extrapolated to zero load. The x
that the indenter had an ideal pyramidal geometry and
intercept is then the plastic depth. This method assumes
use the plastic depth h,, instead of the diagonal length,
that during initial unloading the area in contact with the
we obtain
indenter remains constant. Constant contact area im-
plies linear unloading, which for metals is observed over
most of the unloading range (Fig. 4). For materials with
dh - 1
I___-
rr
dP 2h, 24.5
( )‘”ir,
_.
(3)
higher ratios of hardness to elastic modulus, more cur- where dh /dPis the reciprocal of the unloading slope, or
vature is observed in the unloading curve. However, the compliance. Since the area to depth relationship is
even for silicon where large elastic recoveries are ob- equivalent for both the triangular and Vickers pyra-
served (Fig. 5 ) , linear unloading is observed for rerno-, mids, Eq. ( 3 ) holds for both of these cases.
Val of at least f of the maximum load. The loss of contact From Eq. ( 3 ) , it can be seen that a plot of the mea-
with the indenter is a result of the change in shape of the sured compliance versus the reciprocal of the plastic
depth should yield a straight line with slope equal to
0.179/E,. Young’s modulus can then be calculated, pro-
vided Poisson’sratio is known. However, it is not neces-
< l l D Silicon
./ sary to know the value of Poisson’s ratio with great pre-
cision to obtain a good value of Young’s modulus. In
addition, the y intercept of the compliance versus reci-
procal plastic depth plot should give any additional
compliance which is independent of the contact area.
This includes the compliance of the loading column re-
ferred to earlier, along with any additional compliance
associated with the mounting of the sample.
100 nm 70 nm
DEEP DEEP
FIG. 6 . Transmission electron micrographs of carbon replicas obtained from indentations in annealed a-brass.
(0
Io7
I Measured s h a j
ell>Al <lOO>Al
Q
(L
k
TUNGSTEN v
2. 0 s102
W
CORRECTED x a
UNCORRECTED o 0
-J 1.5 .
cn
OOO>Si
1.0 "
U all>Si
3
cn
r
.Ol .02 .03
I
-=I*
W
t
7%
0. 0 . . : ~
l/OEPTH (nrn)
FIG. 9. The complianceplotted as a function of the reciprocal of the FIG. 10. Comparison of the predicted slope, 0.179/E,, from Eq. ( 3 )
plastic depth for mechanically polished tungsten. Data corrected for to the measured slope obtained from compliance versus Vdepth plots
indenter geometry are linear with a slope related to Young's modulus. for a range of materials.
03
the (1 11) and ( 100) directions, respectively. Also, since l / D E P T H (nm)
the projected area of the indenter is not circular, but
FIG. 12. Compliance data for sputtered films of tungsten on (100)
triangular, a modifying factor may be required in Eq.
silicon.
( 3 ) . This effect would also cause the measured modulus
to be higher than that predicted. In addition, since the
model used here is for isotropic elasticity, effects of an-
isotropy may cause the data to deviate from expected polycrystalline YCo,. A significant difference in
values. For example, measurements of E(,,, for both Young’s modulus is observed for the crystalline and
silicon and aluminum show larger deviations from the amorphous phases. The higher stiffness of the crystal-
expected values than do E ( , l l )The. agreement of the line phase compared to the amorphous phase is com-
data with known values is encouraging, however, and monly observed for other systems.’
lends credence to the method for removal of the elastic One advantage of determining the elastic properties
displacements in the calculation of hardness. as a function of indentation depth, is that it permits the
One example of elastic property measurements us- influence of the substrate on the measurement to be de-
ing the Nanoindenter is in the study of phases and mi- tected. As already demonstrated, the plot of compliance
crostructures produced by thin film deposition. Figure versus reciprocal effective plastic depth is linear for bulk
11 shows data obtained for YCo, films deposited by materials or relatively thick films. However, as the in-
magnetron sputtering under different conditions. The dentation depth approaches the dimensions of the film
“amorphous” film was deposited from a single target thickness, the influence of the substrate can be detected
onto an unheated substrate ( T,ub\iratr ~ 3 5 3K ) . The as a deviation from linearity in the data. This effect is
TEM investigations show the structure to be mostly due to the changing contributions of the film and sub-
amorphous with some small crystallites. The “crystal- strate to the measured compliance. Figure 12 illustrates
line’’ film was deposited by layering material from Y this effect for sputtered tungsten on (100) silicon. The
and Co targets with the substrate heated to 753 K. The compliance as a function of reciprocal effective plastic
microstructure consists of mostly fine-grained (20 nm) depth is plotted for tungsten films of various thicknesses
r
_ A _ ._ _ L _ _ _ ~
YOUNG’S ~0)oUcUSDETERMINATION 7 I
401 t
YCo2 FILMS
I
E
-
w 30 / i
I I
.Ol .02 .03 .Ol .02 .03
l/OEPTH (nml l/DEPTH (nm)
FIG. 1 I . Young’s modulus determination for amorphous (deposited FIG. 13. Comparison of compliance data for tungsten films on silicon
at 353 K ) and crystalline (deposited at 753 K ) films of YCo,. to curves generated from empirical model [ Eiq. ( 5 ) ] with a = 0.25.
15
HARDNESS
- Calculated from Depth
o FPOD Measured l s e a
-m Final Wth
--
0
g
v
10 P l a s t i c lbpth -0
FIG. 14. Comparison of hardness
Ln calculated from various indentation
m depths obtained from the Nanoin-
w denter, to hardness obtained from
Z
0 measured areas in the SEM. The
a measured areas show good agree-
a 5 - D
ment with hardness calculated from
I
the plastic depth.
along with data for bulk tungsten and silicon. For small to allow imaging in the SEM. Figure 14 shows the hard-
indentation depths relative to the film thickness, the ness calculated using the final depth, plastic depth (un-
data approaches that expected for bulk tungsten since loading intercept), and maximum indentation depth for
the indenter samples the film only. For larger indenta- four indentations of each size. The hardness results cal-
tions, the data approaches that expected for bulk silicon. culated from the areas measured by SEM are also
The influence of the substrate on the elastic mea- shown. As seen from Fig. 14, the results obtained from
surements can be modeled empirically using the measured areas agree quite well with the plastic
depth predictions.
Figure 15 shows hardness measurements for
METGLASO 2826 ribbon obtained using both the
Nanoindenter and a Leitz microhardness tester at 25,
50, and 100 g loads. The data from the Nanoindenter
were obtained from indentations of different sizes after
where thesubscriptsf; s, and Orefer to the film, substrate holding at maximum load for 10 s. During indentation,
and indenter, respectively. The film thickness is rand b, the displacement rate was held constant in the range 3 4
is the intercept obtained for the bulk substrate. This nm/s. The microhardness testing was done with 15 s
equation is similar to Eq. ( 3 ) . except for the weighting
factors, exp( - at /he, ) and 1 - exp( - at / h e r ) ,
which have been added to account for the changing con-
15
tributions of the substrate and film to the compliance. METGLAS 2826
The factor a is an empirically determined constant.
Equation ( 5 ) is plotted in Fig. 13 for a = 0.25 and using
values of ( 1 - d ) / E for silicon and tungsten as mea-
sured with the Nanoindenter [ ( I - d ) / E is I
4 . 7 1 x 1 0 - ' 2 Pa-' and 1.93X Pa-' for silicon
and tungsten, respectively 1. Good agreement between
the data and the model are obtained.
C. Hardness results
A series of indentations in METGLASO 2826 rib- I J
bon were produced to verify that the intercept of the 0 5 1 .o 1.5 2 0
tangent to the unloading curve is the correct measure of DEPTH lpm)
the plastic depth under load. In this case, relatively large FIG. 15. Comparison of hardness data for METGLASO 2826 ribbon
(deeper than 250 nm) indentations were made in order obtained using the Nanoindenter and a Leitz microhardness tester.
BRASS
I __
100 200 300 400 100 200 300 4c
DEPTH [nm) DEPTH (nm)
FIG. 16. Hardness data for a-brass obtained from data along the load- FIG. 17. Comparison of hardness obtained from data along the load-
ingcurve from four indentations. Curve B isobtained when the elastic ing curve to that obtained from individual indentations held at maxi-
displacements are removed. Curve A is calculated assuming the elastic mum load for 10 s.
displacements to be negligible.