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T C=100 °C 10
Thermal characteristics
Static characteristics
V DS=600 V, V GS=0 V,
Zero gate voltage drain current I DSS - - 1 µA
T j=25 °C
V DS=600 V, V GS=0 V,
- 10 -
T j=150 °C
V GS=10 V, I D=9.9 A,
Drain-source on-state resistance R DS(on) - 0.18 0.199 Ω
T j=25 °C
V GS=10 V, I D=9.9 A,
- 0.49 -
T j=150 °C
Dynamic characteristics
Fall time tf - 5 -
Qg V GS=0 to 10 V
Gate charge total - 32 43
Reverse Diode
V GS=0 V, I F=9.9 A,
Diode forward voltage V SD - 0.9 1.2 V
T j=25 °C
40 102
limited by on-state
resistance
1 µs
10 µs
30
100 µs
101
1 ms
P tot [W]
I D [A]
20
10 ms
100
DC
10
0 10-1
0 40 80 120 160 100 101 102 103
T C [°C] V DS [V]
101 75
20 V
0.5 10 V
60 8V
100 0.2
7V
45
Z thJC [K/W]
0.1
I D [A]
0.05
6V
0.02
30
10-1
5.5 V
0.01
15
5V
single pulse
4.5 V
10-2 0
10-5 10-4 10-3 10-2 10-1 100 101 0 5 10 15 20
t p [s] V DS [V]
35 1.2
6.5 V
6V
20 V
30 10 V 5.5 V
1 5V
8V 7V
6V 10 V
25
5.5 V 0.8
7V
R DS(on) [Ω]
20
I D [A]
0.6
15
5V
0.4
10
4.5 V
0.2
5
0 0
0 5 10 15 20 0 10 20 30 40
V DS [V] I D [A]
0.6 80
0.5
C °25
60
0.4
R DS(on) [Ω]
I D [A]
0.3 40
98 %
C °150
typ
0.2
20
0.1
0 0
-60 -20 20 60 100 140 180 0 2 4 6 8 10
T j [°C] V GS [V]
10 102
9 25 °C, 98%
8
120 V 150 °C, 98%
400 V
7 25 °C
101 150 °C
6
V GS [V]
I F [A]
5
4
100
3
0 10-1
0 10 20 30 40 0 0.5 1 1.5 2
Q gate [nC] V SD [V]
500 700
400
660
300
V BR(DSS) [V]
E AS [mJ]
620
200
580
100
0 540
20 60 100 140 180 -60 -20 20 60 100 140 180
T j [°C] T j [°C]
105 12
104
Ciss
8
3
10
E oss [µJ]
C [pF]
102 Coss
101
Crss
100 0
0 100 200 300 400 500 0 100 200 300 400 500 600
V DS [V] V DS [V]
1 2 3
MILLIMETERS
DIMENSIONS
MIN. MAX.
DOCUMENT NO.
A 4.50 4.90
Z8B00003319
A1 2.34 2.85
A2 2.42 2.86 REVISION
b 0.65 0.90 07
b1 0.95 1.38
b2 0.95 1.51 SCALE 5:1
b3 0.65 1.38 0 1 2 3 4 5mm
b4 0.65 1.51
c 0.40 0.63
D 15.67 16.15
D1 8.97 9.83 EUROPEAN PROJECTION
E 10.00 10.65
e 2.54
H 28.70 29.75
L 12.78 13.75
L1 2.83 3.45
øP 3.00 3.30 ISSUE DATE
Q 3.15 3.50 27.01.2017
RevisionHistory
IPA60R199CP
Revision:2018-02-26,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
2.3 2018-02-26 Outline PG-TO220 FullPAK update
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
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10 Rev.2.3,2018-02-26