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Fig_1: Substrate
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2.Oxidation: (Layering)
To grow an Oxide layer on Silicon we can use the
oxidation. We know that Silicon is very easy to oxidise you
just have to raise the temperature.
Oxidation processes are two types:
3.Photolithography: (Layering+Pattering)
Photolithography is a process of micro-fabrication to
selectively remove the parts of a thin film or the bulk of the
substrate.
In order to dope the substrate selectively you have to keep
oxide layer in some regions and you have to remove oxide
layer in some other regions. For the selective removal of
oxide-layer you can deposit the PR (Photo-resist) on oxide
layer. Here the photo-resist is sensible to UV rays.
4.Etching:
After removal of a particular material we need to
pattern one more layer i.e., Oxide layer.
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5.Doping:
Adding specific amount of electrically active
impurities to Silicon.
Doping can be done by two methods:
1. Thermal Diffusion :Dopants are delivered to surface of the
wafer at high temperature.
2. Ion- Implantation:At room temperature dopant atoms
are ionised and these ions are accelerated and impinch on the
wafer surface and then get embedded.
Here you can see Diffusion process only.
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Thermal Diffusion:
Diffusion can be proceeded by two steps:
1.Pre-deposition:
From the phosphorous source the P-atoms will
diffuse in top the substrate. Where it is not covered by Oxide
layer.
2.Drive-in:
P-source will shut-off and the p-atoms starting from
the surface diffuse deeper into the Substrate. Drive-in carry
diffusion at higher temperature.
6.Metallization: (Layering+Pattering)
Metallization is a process of forming metal layer
which is used to make interconnections between the
components. The metallization which is directly in contact
with semiconductor is called “Contact Metallization”.
In order to fabricate the PN junction diode we are
forming the metal contact (anode and cathode). In most of the
IC’s, Aluminium is the widely used metal for metallization
because
It is a good conductor.
It can form mechanical bonds with silicon.
It can form low Resistance, Ohmic contacts with
heavily doped n-type and p-type silicon.
Deposit the Aluminium metal on top and bottom of the
surface.
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Here you will form the p+ layer so it does not allow the
electrons from the metal.
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Presented by:
K. Durga,
S160861,
ECE dept,
IIIT Srikakulam.
S160861@rguktsklm.ac.in