STD20NF20

STF20NF20, STP20NF20
N-channel 200 V, 0.10 Ω, 18 A DPAK, TO-220, TO-220FP
low gate charge STripFET™ Power MOSFET

Features
Type VDSS RDS(on) ID PW
STD20NF20 200 V < 0.125 Ω 18 A 110 W
STF20NF20 200 V < 0.125 Ω 18 A 30 W 2
3
2
3
1 1
STP20NF20 200 V < 0.125 Ω 18 A 110 W
TO-220FP TO-220
■ Exceptional dv/dt capability
■ Low gate charge
3
■ 100% avalanche tested 1
DPAK
Application
■ Switching applications

Figure 1. Internal schematic diagram

Description
This Power MOSFET series realized with
$
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters.
'

3

!-V

Table 1. Device summary

Order codes Marking Package Packaging

STD20NF20 20NF20 DPAK Tape and reel

STF20NF20 20NF20 TO-220FP Tube
STP20NF20 20NF20 TO-220 Tube

December 2009 Doc ID 13154 Rev 4 1/15

www.st.com 15
Contents STD20NF20, STF20NF20, STP20NF20

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuits .............................................. 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

2/15 Doc ID 13154 Rev 4

STD20NF20, STF20NF20, STP20NF20 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value
Symbol Parameter Unit
TO-220, DPAK TO-220FP

VDS Drain-source voltage (VGS = 0) 200 V

VGS Gate- source voltage ± 20 V
ID Drain current (continuous) at TC = 25 °C 18 A
ID Drain current (continuous) at TC = 100 °C 11 A
IDM (1) Drain current (pulsed) 72 A
PTOT Total dissipation at TC = 25 °C 110 30 W
Derating factor 0.72 0.2 W/°C
(2)
dv/dt Peak diode recovery voltage slope 15 V/ns
Insulation withstand voltage (RMS) from all
VISO three leads to external heat sink 2500 V
(t = 1 s; Tc = 25 °C)
Tstg Storage temperature
-55 to 175 °C
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD ≤ 18 A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)DSS

Table 3. Thermal data

Symbol Parameter TO-220 DPAK TO-220FP Unit

Rthj-case Thermal resistance junction-case max 1.38 1.38 5 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 50 (1) 62.5 °C/W
Maximum lead temperature for soldering
Tl 300 °C
purpose
1. When mounted on 1inch² FR-4, 2 Oz copper board.

Table 4. Avalanche characteristics

Symbol Parameter Max value Unit

Avalanche current, repetitive or not-

IAR 18 A
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
EAS 110 mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Doc ID 13154 Rev 4 3/15

Electrical characteristics STD20NF20, STF20NF20, STP20NF20

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS ID = 1 mA, VGS = 0 200 V
breakdown voltage
Zero gate voltage VDS = Max rating 1 µA
IDSS
drain current (VGS = 0) VDS = Max rating, TC = 125 °C 10 µA
Gate-body leakage
IGSS VGS = ± 20 V ±100 nA
current (VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
Static drain-source on
RDS(on) VGS = 10 V, ID = 10 A 0.10 0.125 Ω
resistance

Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Forward
gfs (1) VDS = 25 V, ID= 10 A - 13 S
transconductance
Input capacitance pF
Ciss 940
Output capacitance VDS = 25 V, f = 1 MHz, pF
Coss - 197
Reverse transfer VGS = 0 pF
Crss 30
capacitance

td(on) Turn-on delay time 15 ns

VDD = 100 V, ID = 10 A,
tr Rise time 30 ns
RG= 4.7 Ω VGS = 10 V -
td(off) Turn-off delay time 40 ns
(see Figure 15)
tr Fall time 10 ns
Qg Total gate charge VDD = 160 V, ID = 20 A, 28 39 nC
Qgs Gate-source charge VGS = 10 V - 5.6 nC
Qgd Gate-drain charge (see Figure 16) 14.5 nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

4/15 Doc ID 13154 Rev 4

STD20NF20, STF20NF20, STP20NF20 Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

Source-drain current
ISD 18 A
Source-drain current -
ISDM(1) 72 A
(pulsed)
VSD(2) Forward on voltage ISD = 20 A, VGS = 0 - 1.6 V
trr Reverse recovery time ISD = 20 A, di/dt = 100A/µs 155 ns
Qrr Reverse recovery charge VDD = 50 V - 775 nC
IRRM Reverse recovery current (see Figure 20) 10 A
trr Reverse recovery time ISD = 20 A, di/dt = 100 A/µs 183 ns
Qrr Reverse recovery charge VDD = 50 V, Tj = 150 °C - 1061 nC
IRRM Reverse recovery current (see Figure 20) 11.6 A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Doc ID 13154 Rev 4 5/15

Electrical characteristics STD20NF20, STF20NF20, STP20NF20

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220, Figure 3. Thermal impedance area for TO-220,
DPAK DPAK

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

Figure 6. Output characteristics Figure 7. Transfer characteristics

6/15 Doc ID 13154 Rev 4

STD20NF20, STF20NF20, STP20NF20 Electrical characteristics

Figure 8. Transconductance Figure 9. Static drain-source on resistance

AM03979v1
GFS
(S) TJ=-50°C
19

17
TJ=25°C
15

13
TJ=175°C
11

7
3 6 9 12 15 18 ID(A)

Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations

Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature temperature
VGS(th) AM03980v1 RDS(on) AM03981v1

(norm) (norm)
1.10 2.4
2.2
1.00
2.0
0.90
1.8
0.80 1.6

0.70 1.4
1.2
0.60
1.0
0.50
0.8
0.40 0.6
-50 0 50 100 150 TJ(°C) -50 0 50 100 150 TJ(°C)

Doc ID 13154 Rev 4 7/15

Electrical characteristics STD20NF20, STF20NF20, STP20NF20

Figure 14. Source-drain diode forward

characteristics
AM03982v1
VSD
(V)
TJ=-50°C

0.9

TJ=25°C
0.8

0.7
TJ=175°C

0.6

0.5
3 6 9 12 15 18 ISD(A)

8/15 Doc ID 13154 Rev 4

STD20NF20, STF20NF20, STP20NF20 Test circuits

3 Test circuits

Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
µF µF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. µF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test
switching and diode recovery times circuit

L
A A A
D
FAST L=100µH VD
G D.U.T. DIODE 2200 3.3
µF µF VDD
S B 3.3 1000
B B µF µF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform

V(BR)DSS ton toff

tr tdoff tf
VD tdon

90% 90%
IDM
10%
ID 10% VDS
0

VDD VDD 90%

VGS

AM01472v1 0 10% AM01473v1

Doc ID 13154 Rev 4 9/15

Package mechanical data STD20NF20, STF20NF20, STP20NF20

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

10/15 Doc ID 13154 Rev 4

STD20NF20, STF20NF20, STP20NF20 Package mechanical data

TO-220 type A mechanical data

mm
Dim
Min Typ Max
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95

0015988_Rev_S

Doc ID 13154 Rev 4 11/15

Package mechanical data STD20NF20, STF20NF20, STP20NF20

TO-252 (DPAK) mechanical data

mm.
DIM.
min. ty p ma x .
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4. 70
e 2.28
e1 4.40 4.60
H 9.35 10.10
L 1
L1 2.80
L2 0.80
L4 0.60 1
R 0.20
V2 0o 8o

0068772_G

12/15 Doc ID 13154 Rev 4

STD20NF20, STF20NF20, STP20NF20 Packaging mechanical data

5 Packaging mechanical data

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881

BASE QTY BULK QTY

TAPE MECHANICAL DATA
2500 2500
mm inch
DIM.
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641

Doc ID 13154 Rev 4 13/15

Revision history STD20NF20, STF20NF20, STP20NF20

6 Revision history

Table 8. Revision history

Date Revision Changes

25-Jan-2007 1 First release

20-Mar-2007 2 Typo mistake in first page (order codes)
27-Apr-2007 3 Updates on Table 6: Dynamic
10-Dec-2009 4 Modified device summary on first page

14/15 Doc ID 13154 Rev 4

STD20NF20, STF20NF20, STP20NF20

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Doc ID 13154 Rev 4 15/15