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Ordering number : ENN2246B

2SB1274/2SD1913
PNP/NPN Epitaxial Planar Silicon Transistors

2SB1274/2SD1913
60V/3A Low-Frequency
Power Amplifier Applications

Applications Package Dimensions


• General power amplifier. unit : mm
2041A
[2SB1274/2SD1913]
4.5
10.0 2.8
Features
3.2

3.5
Wide ASO (Adoption of MBIT process).

7.2

• Low saturation voltage.

16.0
• High reliability.

18.1
• High breakdown voltage.
• Micaless package facilitating mounting. 2.4

5.6
1.6
1.2

14.0
0.7
0.75

1 2 3 1 : Base
2.55 2.55 2 : Collector
Specifications
2.4
3 : Emitter
( ):2SB1274 2.55 2.55 SANYO : TO-220ML
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (−)60 V
Collector-to-Emitter Voltage VCEO (−)60 V
Emitter-to-Base Voltage VEBO (−)6 V
Collector Current IC (−)3 A
Collector Current (Pulse) ICP (−)8 A
2 W
Collector Dissipation PC
Tc=25°C 20 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg −55 to +150 °C

Electrical Characteristics at Ta=25°C


Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=(--)40V, IE=0 (--)100 µA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0 (--)100 µA
Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company


TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2000 TS IM 8-2055 No.2246-1/4
2SB1274/2SD1913

Continued from preceding page.


Ratings
Parameter Symbol Conditions Unit
min typ max
hFE1 VCE=(--)5V, IC=(--)0.5A 70* 280*
DC Current Gain
hFE2 VCE=(--)5V, IC=(--)3A 20
Gain-Bandwidth Product fT VCE=(--)5V, IC=(--)0.5A 100 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (60)40 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)2A, IB=(--)0.2A (--)0.4 (--)1 V
Base-to-Emitter Voltage VBE VCE=(--)5V, IC=(--)0.5A (--)0.8 (--)1 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)1mA, IE=0 (--)60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=5mA, RBE=∞ (--)60 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)1mA, IC=0 (--)6 V

* : The 2SBB1274 / 2SD1913 are classified by 0.5A hFE as follows :


Rank Q R S
hFE 70 to 140 100 to 200 140 to 280

IC -- VCE IC -- VCE
--3.0 3.0
50mA 45mA

2SB1274 mA --30mA mA A 20mA


A

--35 30 25m 2SD1913


0m

--25mA
--4
A

--2.5 2.5
mA mA 15mA
mA--45m

--20mA 40 35
Collector Current, IC -- A

Collector Current, IC -- A

--2.0 2.0
--50

--15mA
10mA
--1.5 1.5
--10mA

--1.0 1.0 5mA


--5mA

--0.5 0.5

IB=0 IB=0
0 0
0 --1 --2 --3 --4 --5 --6 0 1 2 3 4 5 6
Collector-to-Emitter Voltage, VCE -- V IT02816 Collector-to-Emitter Voltage, VCE -- V IT02817
IC -- VBE IC -- VBE
--3.6 3.6
2SB1274 2SD1913
--3.2 VCE= --5V 3.2 VCE=5V

--2.8 2.8
Collector Current, IC -- A

Collector Current, IC -- A

--2.4 2.4

--2.0 2.0
C

--1.6 1.6
C
25°C
20°

--40°
1
Ta=
C

--1.2 1.2

C
°C
25°
12

--40
=

--0.8 0.8
Ta

--0.4 0.4

0 0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE -- V IT02818 Base-to-Emitter Voltage, VBE -- V IT02819

No.2246-2/4
2SB1274/2SD1913
hFE -- IC hFE -- IC
1000 1000
2SB1274 2SD1913
7 VCE= --5V 7 VCE=5V
5 5
DC Current Gain, hFE

DC Current Gain, hFE


3 Ta=120°C 3 Ta=120°C

2 25°C 2
25°C
--40°C --40°C

100 100

7 7

5 5

3 3

2 2
7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5
Collector Current, IC -- A IT02820 Collector Current, IC -- A IT02821
f T -- IC f T -- IC
3 3
2SB1274 2SD1913
2 VCE= --5V 2 VCE=5V

Gain-Bandwidth Product, f T -- MHz


Gain-Bandwidth Product, f T -- MHz

100 100

7 7

5 5

3 3

2 2

10 10

7 7
5 5
7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 5 0.01 2 3 5 0.1 2 3 5 1.0 2 3 5
Collector Current, IC -- A IT02822 Collector Current, IC -- A IT02823
VCE(sat) -- IC VCE(sat) -- IC
2 2
2SB1274 2SD1913
--1.0 IC / IB=10 1.0 IC / IB=10
Saturation Voltage, VCE(sat) -- V
Saturation Voltage, VCE(sat) -- V

7 7
5 5

3 3
2 °C 2
25
Collector-to-Emitter
Collector-to-Emitter

°C
--0.1
0°C 0.1 25
12
7 a= 7
T 0°
C
5 2 0°C
5
--4 =1
Ta

C
3 3
--4
2 2

--0.01 0.01
7 7
7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5
Collector Current, IC -- A IT02824 Collector Current, IC -- A IT02825
VBE(sat) -- IC VBE(sat) -- IC
2 2
2SB1274 2SD1913
IC / IB=10 IC / IB=10
Saturation Voltage, VBE(sat) -- V

Saturation Voltage, VBE(sat) -- V

--10 10

7 7
5 5

3 3
Base-to-Emitter

Base-to-Emitter

2 2

25°C 25°C
--1.0
Ta=120°C 1.0
Ta= --40°C
7 7
5 --40°C 5 120°C
3 3
7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5
Collector Current, IC -- A IT02826 Collector Current, IC -- A IT02827

No.2246-3/4
2SB1274/2SD1913
ASO ASO
2 2
2SB1274 2SD1913
--10 ICP= --8A 100µs 10 ICP=8A 100µs
7 7

Collector Current, IC -- A
50
Collector Current, IC -- A

5 10 0µ 5 10
0m 0m 50
IC= --3A s 1m s IC=3A s 0µ
3
DC s 3 DC s

1m s
10
op

10
op

s
2 2 era

m
era

s
tio
tio n
n
--1.0 1.0
7 7
5 5

3 3
2 2

--0.1 0.1
2 3 5 7 --10 2 3 5 7--100 2 3 5 7 10 2 3 5 7 100
Collector-to-Emitter Voltage, VCE -- V IT02828 Collector-to-Emitter Voltage, VCE -- V IT02829
PC -- Ta PC -- Tc
2.5 25
2SB1274 / 2SD1913 2SB1274 / 2SD1913
Collector Dissipation, PC -- W

Collector Dissipation, PC -- W
2.0 20

1.5 No 15
he
at
sin
k
1.0 10

0.5 5

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT02831 Case Temperature, Tc -- °C IT02830

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of December, 2000. Specifications and information herein are subject
to change without notice.

PS No.2246-4/4
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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