Review of Practical Semiconductor Devices

Important Features:
POWER SEMICONDUCTOR AND
• Switching Speed
POWER CONCEPT

Power
• Power Handling
Ideal Switching
Dr. Ir. Mochamad Ashari, M.Eng Capabilities Device
Jurusan Teknik Elektro
Fakultas Teknologi Industri
INSTITUT TEKNOLOGI SEPULUH NOPEMBER (ITS)

Frequency

Power Electronics T. Elektro -ITS 2

A Switching Circuit Diode Implementation

vin
S iL +
vin Control RL
vo iL +
vin
T
D
T/2
_ vin RL vo
_
T/2 T
 T
S is ON 0 ≤ t ≤ → vo =Vin
2
ControlFunction= 
 S is OFF T
 ≤ t ≤ T → vo = 0
2

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 Switching Characteristics
Ideal Switch: Ideal Switching Characteristic Curves:
• No power Limit (unlimited voltage block and forward current)
• Zero Turn-on and turn-off times (No switching speed limit and vsw
Voff
infinite frequency of operation)
• No power dissipation (no on-resistance and no leakage current) Von time
isw
Practical switch: Ion
+ isw
• Limited power handling capabilities (max voltage and max vsw
current) _
Ioff time
• Delayed turing on and off (limited frequency of operation)
• On-resistance and off-leakage current (has power dissipation) p(t)
time

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Example:
Non-Ideal Characteristic Curves: Consider the following switching characteristic curves:
vs
w
Voff

Von vsw isw

time Voff
Ion Ion
isw

Ioff t
time
t=0 t toff
on
p(t) Pmax
Pmin Ts
time

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 Switching loss Power Device — Power Diodes
vs I-V characteristic
isw +
iD
Voff w
Ion vD
iD
t _
t=0 t toff IF
on

p(t)
Ts
IonVoff iD
4 −VBR
t
VF vD ON
Ts
0 −Is
ton ton Ts− toff toff
IonVoff 2 2
4 OFF
t vD

approximation

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Typical I-V characteristic
Power Electronics T. Elektro -ITS
Ideal I-V characteristic
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Power Device — Silicon Controlled Rectifiers (SCR) Power Device — Bipolar Junction Transistor (BJT)
iA
I-V characteristic Anode (A)
I-V characteristic
iA +
iC Saturation(OFF-state) iC
Forward blocking vAK
region +
iB
ig _
ig3>ig2>ig1
Cathode (K) vCE
ig1 ig1 ig1 ig1 ig1 ig=0
Active region Increasing
Max reverse Latching current _
voltage base
Holding current current
− vAK Forward breakover vAK
voltage iC
Reverse
Reverse blocking iA Cut-OFF(OFF-state)
avalanche region
region ON-state
Forward current vCE
ON carrying(ON)
OFF-state
Reverse voltage
Forward voltage
blocking vCE
blocking(OFF)

vAK Ideal switch characteristics

Typical I-V characteristic

Power Electronics T. Elektro -ITS
Ideal I-V characteristic
11
Typical I-V characteristic
Power Electronics T. Elektro -ITS
Ideal I-V characteristic
12

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 Power Device — Power MOSFET Power Device — Insulated Gate Bipolar Transistor
I-V characteristic

iD
Combining the good features of the BJT and MOSFET
Triode Saturation region
(linear region) (active region) Simplified two- transistor model:
vDS<vGS−VT vDS > vGS −VT
• IGBT has higher turn-off time than MOSFETs
Drain (D)
• No second breakdown voltage
VGS increease
+
VGS = VT+1
Gate (G) vDS
+
vB _
VGS < VT E −
vDS Source (S)

Typical I-V characteristic

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Types of Switches
Anode (A)
Power Device — Insulated Gate Bipolar Transistor (IGBT) iC iA
+
iD + vAK
iB
C
vCE
• High input impedance and high - vD + _ ig _
current gaIn Cathode (K)
G
• Turn off by zero gate voltage Forward current and Forward current and forward Forward current and bidirectional
E (remove the conducting reverse voltage blocking voltage blocking
voltage blocking
channel)
C • No second breakdown
• Faster switching speed than BJT
iC + -
G and can operate in medium iB +
power up to 20kHz vCE
_ - +
• Improved input and output
E
capacitances
Bidirectional current carrying and Bidirectional current carrying and
forward voltage blocking bidirectional voltage blocking
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 Power conversion means changes in
Bidirectional Switch Implementation current and voltage:
To cancel the

D
bodydiode
Fast recovery
diode
• Voltage form ac or dc
D
Body doide • voltage level (magnitude)
G
G • voltage frequency (line or otherwise)
S
S
• voltage waveshape (sinusoidal or nonsinusoidal
such as square, triangle, sawtooth, etc.)
• Voltage phase(single or three-phase).

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Classification of Power
Converter Circuits POWER CONCEPTS
Basic Power Concepts
• Power Electronic systems perform one or more of
the following conversion functions: Power concepts applied to:
a) Rectification (ac-to-dc)
b) Inversion (dc-to-ac) – Sinusoidal waveforms
c) Cycloconversion – Non-sinusoidal waveforms
(ac-to-ac different frequencies) or
ac-controllers(ac-to-acsame frequency)
d) Conversion (dc-to-dc)
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 Power Flow — Unidirectional: input-to-
Power Flow — Bidirectional
output
(input) (output) (input) (output)
Source Side Load Side Source Side Load Side

Power Power
Processing Processing
Load II I Load II I
circuit circuit
(Ploss) (Ploss)

III IV III IV

v(t) i(t)
i(t)

v(t)

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Instantaneous, Average and Root-mean-

Average, Reactive and Apparent Powers
square (rms) Value
Instantaneous power: p(t) = v(t) i(t).
Instantaneous value: v(t)
Average power: 1T 1T
Pave = ∫ p( t )dt = ∫ i( t )v( t )dt
T0 T0
1T
Average value: Vave = ∫ v( t )dt Apparent Power: Z = R + j X = Z ejθ,
T0
PT =Vrms I rms e jθ = Se jθ

S — Apparent Power
Root-mean-square 1T 2
(rms) value: Vrms = ∫ v ( t )dt Reactive power:
T0 PT = P + j Q,
P = S cos θ , Q = S sin θ
Q — Reactive power
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 Non-sinusoidal Waveform and Fourier
Power Factor
Analysis F(ω)
Real Power ( Average) f(t)
PowerFacto r =
Apparent Power

t ω
I V cos θ
s , rms s , rms
Power Factor = f (t ) = F0 + f1 (t ) + f 2 (t ) + ... + fn (t )
I V
s , rms s , rms ∞
= F0 + ∑ (an cos nωt + b n sin nωt )
n =1
= cos θ 2 T
1 T an = ∫0 f ( t ) cos nωt dtn = 1,2,3,..., ∞
F0 = ∫0 f ( t )dt T
θ — power factor angle T
2
b n = ∫0T f (t ) sin nωt dtn = 1,2,3,..., ∞
T
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Non-sinusoidal Waveform and Fourier

Analysis Sinusoidal Waveforms
Instantaneous and Average Powers
Or,
∞
f (t )=F0 + ∑ Fn sin(nωt+θn ) First let us consider the case for linear, one-port network shown in
n=1 Fig. 1(a). Since the network consists of linear components, its
instantaneous source current and voltage expression may be
represented as follows:
Fn = an2 +b n2
is (t) = I s sin(ωt −θi )
−1  b n
 vs (t) =Vs sin(ωt −θv )
θn =tan  
a
 n
where, θi and θv are the port current and voltage phase-shift,
respectively.

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 T h e in s ta n ta n e o u s p o w er p (t), is g iv e n b y

is(t) p(t ) = isv s

Vs is = I sV s sin ( ω t − θ i ) sin ( ω t − θ v )
Is
a Linear vs (3 .3
vs(t) One-port 2)
θi
a' Network ωt
T h e w a v e fo r m s fo r i s (t), v s (t) a n d P (t) a r e s h o w n in F ig .
− Is 1 (b ).
− Vs θv
θv − θi
T h e in p u t a v e r a g e p o w e r c a n b e c a lcu la te d fr o m th e
p(t)
fo llo w in g in te g r a l,
T
1
Pave =
T ∫
0
p ( t ) dt
T
1
= T ∫i s (t ) v s (t )dt (1 )
0
ωt

S u b s titu tin g fo r i s a n d v s fr o m th e a b o v e e q u a tio n s a n d b y

u s in g th e fo llo w in g tr ig o n o m e tr ic id e n titie s ,
Fig. 3.10(b)

Fig. 1(a) Linear one-port circuit cos( θ 1 ± θ 2 ) = cos θ 1 cos θ m sin θ sin θ 2
2 1
(b) Circuit waveforms sin( θ 1 ± θ 2 ) = sin θ 1 cos θ ± cos θ sin θ 2
2 1

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P ow er F a cto r
The instantaneous power may be expressed as
P ow er factor is a very im portant p aram eter in pow er
follows, electron ics becau se it gives a m easu re of how effective is
real pow er utilization in the system . It also represen ts a
I sV s m easure of d istortion of line voltage an d lin e current an d
p( t ) =
2
[ cos(θV − θi ) − cos( 2ω t + θV + θi ) ] (2) ph ase sh ift betw een th em . L et u s con sider F ig. 1(a) in
providin g th e basic defin ition of p ow er fa ctor.

The average power becomes, P ow er F actor (pf) is defin ed as the ratio of th e avera ge
pow er m easu red at th e term inals a-a' of F ig. 1(a) an d the
rm s produ ct of v s a nd i s as given in E q. (4).
I sV s
Pave = [cos(θ V − θ i ) ]
2 PowerFacto r =
Real Power ( Average )
(4)
Apparent Power

In terms of the rms parameters, the average power F or pu rely sinu soidal cu rren t and voltage w aveform s, the
is given by, average pow er is given in E q. (3) an d the ap paren t pow er
is given by I s,rm s , V s,rm s . A s a resu lt, E q. (4) yields

Pave = I s , rmsV s , rms cos(θ v − θ i ) (3) Power Factor =

I V
s , rms s , rms
cos θ
I V
s , rms s , rms
= cos θ (5)
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 In linear pow er system s, w hen the line voltage and line
currents are purely sinusoidal, the pow er factor is equal
to the cosine of the phase-angle betw een the current and
voltage. H ow ever, in pow er electronic circuits, due to the
sw itching of active pow er devices, the phase-angle
representation alone is not valid. T his is w hy, w e w ill
shortly define pow er factor for term inal, w hose current
and/or voltage are nonsinusoidal (distorted).
1
Z =R− j Z = R − jωL
T he angle θ is know n as pow er factor angle, therefore, ωC
V V
pow er factor varies betw een zero an d one, depending on = Z ∠θ
I
= Z ∠θ
I
the type of the netw ork. F or θ > 0, m eans the current lags 2
Z = R 2 + (ωL )
2
 1 
the voltage, representing inductive-resistive load as Z = 
R2 +  
 ωL
 ωC  θ = − tan −1 > 0°
show n in Fig. 2(a). T he netw ork load is said to be having a 1 R
lagging pow er factor. Sim ilarly, for θ < 0, the current θ = − tan −1 < 0°
ωRC
leads the voltage, representing capacitive-resistive load
w ith leading pow er factor as show n in Fig. 2(b).

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Let us calculate the power factor for: resistive, inductive

and capacitive two-terminal network:
Therefore, the power factor angle is θ − θ = θ = − 90 ,
v I
o

resulting in zero power factor. This means the purely

i) Resistive Network capacitive circuit has no average power delivered, (as
The voltage and current relation is given by,
expected from an ideal capacitor). This is a leading power
v s = is R factor because current leads voltage by 900.

and the power angle is θ = θ − θ i = 0 , resulting in a

v
iii) Inductive Network
power factor equal to one.

ii) Capacitive Network V s ∠θ v

= jω L
I s ∠θ I
The capacitor current and voltage relation is given by,

is = C
dv s Vs
dt ∠θV − θ I = ω L∠ 90 o
In phasor domain, we have Is

|Vs | ∠θv 1
= − j
| Is |∠θI ωC The power factor angle is θ = +90 , resulting in
o

|Vs | 1
lagging power factor because current lags voltage
∠θV −θ = ∠ − 90 o

| Is |
I
ωC by 90o.
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 Non-Sinusoidal Waveforms The rms values of is(t) and vs(t)

Line current harmonics:

Line current is and line voltage vs periodical non- 1T 2

I s2,rms = ∫ i (t )dt
sinusoidal waveforms with period T and zero dc, then T0
is(t) and vs(t) are given as follows, 2
=I DC + I s1,rms 2 + I s 2,rms 2 +⋅ ⋅ ⋅+ I sn,rms 2 n=1, 2, … ∞
∞
is (t )= I DC + I s1sin( nω t +θ1i )+ ∑ I sn sin( nω t +θ ni )
n=2
∞
v s (t ) =VDC +Vs1sin( nω t +θ1v )+ ∑ Vsn sin( nω t +θ nv ) Vs2,rms =VDC
2
+Vs1,rms 2 +Vs 2,rms 2 +⋅ ⋅ ⋅+Vsn,rms 2 n=1, 2, … ∞
n=2

where Is1 and Vs1 are the peak values of the current
and voltage fundamental components, respectively.

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The instantaneous power is given by,

Total Harmonic Distortion
p (t ) = is (t )v s (t )
∞ ∞
= I DCVDC + I DC ∑ Vsn sin( nω t − θ nv ) + VDC ∑ I sn sin( nω t − θ ni ) +
n =1 n =1 The distorted portion of is(t) defined as,
∞  ∞ 
+  ∑ I sn sin( nω t − θ ni )  ∑ Vsn sin( nω t − θ nv ) 
 n =1  m =1 
∞
Evaluating the average value of p(t) over one period: is ,dist . = is (t ) − is1 (t ) = ∑ isn (t )
n=2

Pave = I DC VDC + I s1,rms Vs1,rms cos(θ v1 −θ i1 )+ I s 2,rms Vs 2,rms cos(θ v 2 −θ i 2 ) +⋅ ⋅ ⋅ ∞

v s ,dist . = vs (t ) − v s1 (t ) = ∑ v sn (t )
∞ n=2
= I DC VDC + ∑ I sn,rms Vsn,rms cosθ n
n=1

where θn = θvn − θin (n = 1, 2, …∞)

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 The relative measure of the distortion is In terms of the rms of the original waveform, THD
defined through an index called Total maybe rewritten as,
Harmonic Distortion (THD):
2
 I s ,rms 
For Current: THDi =   −1

 I s1,rms 
2 2
I dist ,rms  I s 2,rms   I s 3,rms 
THDi = =   +
 
 + ...

I s1,rms  I s1,rms   I s1,rms  2
 Vs ,rms 
THDv =   −1

For Voltage:  Vs1,rms 

2 2
Vdist ,rms  Vs 2,rms   Vs 3,rms  It is also common to refer to THD in %.
THDv = =   +
 
 + ...

Vs1,rms  Vs1,rms   Vs1,rms 

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Power Factor The current is expressed in terms of Fourier series as

follows,,
Assume zero dc components, pf may be expressed as
∞
is (t ) = I 0 + I1 sin(ωt + θ1 ) + I 2 sin( 2ωt + θ 2 ) + ... + I n sin( nωt + θ n )
∞
∑ I sn, rmsVsn, rms cos θ n ∑ I sn, rmsVsn, rms cosθ n
n =1 n =1
pf = = resulting in the average power given by,
I s ,rmsVs ,rms ∞ 2 ∞ 2
∑ I ns , rms ∑ Vns , rms
n =1 n =1
1 T
Pave = ∫ vs is dt = Vs , rms I s1, rms cosθ1
The above expression for pf can be significantly T 0
simplified if we assume: Hence the power factor is given by,
v s (t ) = Vs sin ωt is (t ) = distorted (non − sin usoidal )
I V cos θ
s1, rms s , rms 1
PowerFactor =
I s1,rms I V
cosθ1
s , rms s , rms
pf =
I s ,rms

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 Hence, power factor in power electronics is more
useful if it is represented as a product of the kdist
The expression Is1,rms/Is,rms is caused by the and kdisp
distortion of the line current and appropriately
called distortion power factor kdist pf = kdist kdisp
where,

The expression cosθ1 is caused by the kdisp= cosθ1, kdist = Is1,rms/Is,rms

displacement angle between the line voltage
and the fundamental current component and In terms of kdist, it can be shown that current
THDi can be expressed as
commonly known as displacement power factor
kdisp. 1
THDi = 2
−1
k dist

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