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02 Power Semikonduktor PDF
02 Power Semikonduktor PDF
Important Features:
POWER SEMICONDUCTOR AND
• Switching Speed
POWER CONCEPT
Power
• Power Handling
Ideal Switching
Dr. Ir. Mochamad Ashari, M.Eng Capabilities Device
Jurusan Teknik Elektro
Fakultas Teknologi Industri
INSTITUT TEKNOLOGI SEPULUH NOPEMBER (ITS)
Frequency
1
Switching Characteristics
Ideal Switch: Ideal Switching Characteristic Curves:
• No power Limit (unlimited voltage block and forward current)
• Zero Turn-on and turn-off times (No switching speed limit and vsw
Voff
infinite frequency of operation)
• No power dissipation (no on-resistance and no leakage current) Von time
isw
Practical switch: Ion
+ isw
• Limited power handling capabilities (max voltage and max vsw
current) _
Ioff time
• Delayed turing on and off (limited frequency of operation)
• On-resistance and off-leakage current (has power dissipation) p(t)
time
Example:
Non-Ideal Characteristic Curves: Consider the following switching characteristic curves:
vs
w
Voff
Ioff t
time
t=0 t toff
on
p(t) Pmax
Pmin Ts
time
2
Switching loss Power Device — Power Diodes
vs I-V characteristic
isw +
iD
Voff w
Ion vD
iD
t _
t=0 t toff IF
on
p(t)
Ts
IonVoff iD
4 −VBR
t
VF vD ON
Ts
0 −Is
ton ton Ts− toff toff
IonVoff 2 2
4 OFF
t vD
approximation
Power Device — Silicon Controlled Rectifiers (SCR) Power Device — Bipolar Junction Transistor (BJT)
iA
I-V characteristic Anode (A)
I-V characteristic
iA +
iC Saturation(OFF-state) iC
Forward blocking vAK
region +
iB
ig _
ig3>ig2>ig1
Cathode (K) vCE
ig1 ig1 ig1 ig1 ig1 ig=0
Active region Increasing
Max reverse Latching current _
voltage base
Holding current current
− vAK Forward breakover vAK
voltage iC
Reverse
Reverse blocking iA Cut-OFF(OFF-state)
avalanche region
region ON-state
Forward current vCE
ON carrying(ON)
OFF-state
Reverse voltage
Forward voltage
blocking vCE
blocking(OFF)
3
Power Device — Power MOSFET Power Device — Insulated Gate Bipolar Transistor
I-V characteristic
iD
Combining the good features of the BJT and MOSFET
Triode Saturation region
(linear region) (active region) Simplified two- transistor model:
vDS<vGS−VT vDS > vGS −VT
• IGBT has higher turn-off time than MOSFETs
Drain (D)
• No second breakdown voltage
VGS increease
+
VGS = VT+1
Gate (G) vDS
+
vB _
VGS < VT E −
vDS Source (S)
Types of Switches
Anode (A)
Power Device — Insulated Gate Bipolar Transistor (IGBT) iC iA
+
iD + vAK
iB
C
vCE
• High input impedance and high - vD + _ ig _
current gaIn Cathode (K)
G
• Turn off by zero gate voltage Forward current and Forward current and forward Forward current and bidirectional
E (remove the conducting reverse voltage blocking voltage blocking
voltage blocking
channel)
C • No second breakdown
• Faster switching speed than BJT
iC + -
G and can operate in medium iB +
power up to 20kHz vCE
_ - +
• Improved input and output
E
capacitances
Bidirectional current carrying and Bidirectional current carrying and
forward voltage blocking bidirectional voltage blocking
Power Electronics T. Elektro -ITS 15 Power Electronics T. Elektro -ITS 16
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Power conversion means changes in
Bidirectional Switch Implementation current and voltage:
To cancel the
D
bodydiode
Fast recovery
diode
• Voltage form ac or dc
D
Body doide • voltage level (magnitude)
G
G • voltage frequency (line or otherwise)
S
S
• voltage waveshape (sinusoidal or nonsinusoidal
such as square, triangle, sawtooth, etc.)
• Voltage phase(single or three-phase).
Classification of Power
Converter Circuits POWER CONCEPTS
Basic Power Concepts
• Power Electronic systems perform one or more of
the following conversion functions: Power concepts applied to:
a) Rectification (ac-to-dc)
b) Inversion (dc-to-ac) – Sinusoidal waveforms
c) Cycloconversion – Non-sinusoidal waveforms
(ac-to-ac different frequencies) or
ac-controllers(ac-to-acsame frequency)
d) Conversion (dc-to-dc)
Power Electronics T. Elektro -ITS 19 Power Electronics T. Elektro -ITS 20
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Power Flow — Unidirectional: input-to-
Power Flow — Bidirectional
output
(input) (output) (input) (output)
Source Side Load Side Source Side Load Side
Power Power
Processing Processing
Load II I Load II I
circuit circuit
(Ploss) (Ploss)
III IV III IV
v(t) i(t)
i(t)
v(t)
S — Apparent Power
Root-mean-square 1T 2
(rms) value: Vrms = ∫ v ( t )dt Reactive power:
T0 PT = P + j Q,
P = S cos θ , Q = S sin θ
Q — Reactive power
Power Electronics T. Elektro -ITS 23 Power Electronics T. Elektro -ITS 24
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Non-sinusoidal Waveform and Fourier
Power Factor
Analysis F(ω)
Real Power ( Average) f(t)
PowerFacto r =
Apparent Power
t ω
I V cos θ
s , rms s , rms
Power Factor = f (t ) = F0 + f1 (t ) + f 2 (t ) + ... + fn (t )
I V
s , rms s , rms ∞
= F0 + ∑ (an cos nωt + b n sin nωt )
n =1
= cos θ 2 T
1 T an = ∫0 f ( t ) cos nωt dtn = 1,2,3,..., ∞
F0 = ∫0 f ( t )dt T
θ — power factor angle T
2
b n = ∫0T f (t ) sin nωt dtn = 1,2,3,..., ∞
T
Power Electronics T. Elektro -ITS 25 Power Electronics T. Elektro -ITS 26
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T h e in s ta n ta n e o u s p o w er p (t), is g iv e n b y
Fig. 1(a) Linear one-port circuit cos( θ 1 ± θ 2 ) = cos θ 1 cos θ m sin θ sin θ 2
2 1
(b) Circuit waveforms sin( θ 1 ± θ 2 ) = sin θ 1 cos θ ± cos θ sin θ 2
2 1
P ow er F a cto r
The instantaneous power may be expressed as
P ow er factor is a very im portant p aram eter in pow er
follows, electron ics becau se it gives a m easu re of how effective is
real pow er utilization in the system . It also represen ts a
I sV s m easure of d istortion of line voltage an d lin e current an d
p( t ) =
2
[ cos(θV − θi ) − cos( 2ω t + θV + θi ) ] (2) ph ase sh ift betw een th em . L et u s con sider F ig. 1(a) in
providin g th e basic defin ition of p ow er fa ctor.
The average power becomes, P ow er F actor (pf) is defin ed as the ratio of th e avera ge
pow er m easu red at th e term inals a-a' of F ig. 1(a) an d the
rm s produ ct of v s a nd i s as given in E q. (4).
I sV s
Pave = [cos(θ V − θ i ) ]
2 PowerFacto r =
Real Power ( Average )
(4)
Apparent Power
In terms of the rms parameters, the average power F or pu rely sinu soidal cu rren t and voltage w aveform s, the
is given by, average pow er is given in E q. (3) an d the ap paren t pow er
is given by I s,rm s , V s,rm s . A s a resu lt, E q. (4) yields
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In linear pow er system s, w hen the line voltage and line
currents are purely sinusoidal, the pow er factor is equal
to the cosine of the phase-angle betw een the current and
voltage. H ow ever, in pow er electronic circuits, due to the
sw itching of active pow er devices, the phase-angle
representation alone is not valid. T his is w hy, w e w ill
shortly define pow er factor for term inal, w hose current
and/or voltage are nonsinusoidal (distorted).
1
Z =R− j Z = R − jωL
T he angle θ is know n as pow er factor angle, therefore, ωC
V V
pow er factor varies betw een zero an d one, depending on = Z ∠θ
I
= Z ∠θ
I
the type of the netw ork. F or θ > 0, m eans the current lags 2
Z = R 2 + (ωL )
2
1
the voltage, representing inductive-resistive load as Z =
R2 +
ωL
ωC θ = − tan −1 > 0°
show n in Fig. 2(a). T he netw ork load is said to be having a 1 R
lagging pow er factor. Sim ilarly, for θ < 0, the current θ = − tan −1 < 0°
ωRC
leads the voltage, representing capacitive-resistive load
w ith leading pow er factor as show n in Fig. 2(b).
is = C
dv s Vs
dt ∠θV − θ I = ω L∠ 90 o
In phasor domain, we have Is
|Vs | ∠θv 1
= − j
| Is |∠θI ωC The power factor angle is θ = +90 , resulting in
o
|Vs | 1
lagging power factor because current lags voltage
∠θV −θ = ∠ − 90 o
| Is |
I
ωC by 90o.
Power Electronics T. Elektro -ITS 35 Power Electronics T. Elektro -ITS 36
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Non-Sinusoidal Waveforms The rms values of is(t) and vs(t)
where Is1 and Vs1 are the peak values of the current
and voltage fundamental components, respectively.
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The relative measure of the distortion is In terms of the rms of the original waveform, THD
defined through an index called Total maybe rewritten as,
Harmonic Distortion (THD):
2
I s ,rms
For Current: THDi = −1
I s1,rms
2 2
I dist ,rms I s 2,rms I s 3,rms
THDi = = +
+ ...
I s1,rms I s1,rms I s1,rms 2
Vs ,rms
THDv = −1
For Voltage: Vs1,rms
2 2
Vdist ,rms Vs 2,rms Vs 3,rms It is also common to refer to THD in %.
THDv = = +
+ ...
Vs1,rms Vs1,rms Vs1,rms
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Hence, power factor in power electronics is more
useful if it is represented as a product of the kdist
The expression Is1,rms/Is,rms is caused by the and kdisp
distortion of the line current and appropriately
called distortion power factor kdist pf = kdist kdisp
where,
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