Dg417le PDF

DG417LE, DG418LE, DG419LE
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6  On-Resistance, +12 V, ± 5 V, +5 V, +3 V, SPST and SPDT Switches
DESCRIPTION FEATURES
DG417LE, DG418LE, DG419LE analog switches are • +3 V to +16 V single supply, or
designed to operate from +3 V to +16 V single supply or ± 3 V to ± 8 V dual supply
± 3 V to ± 8 V dual supply and are fully specified at +12 V, • On resistance: 6  for DG417LE, DG418LE
Available
± 5 V, +5 V, and +3 V. 11  for DG419LE Available

The DG417LE, DG418LE, DG419LE are lower voltage • Fast switching speeds: tON = 20 ns, tOFF = 15 ns
pin-for-pin compatible companion devices to the industry
• Break-before-make switching for DG419LE
standard DG417, DG418, and DG419. Each switch
conducts equally well in both directions when on, blocks • Fully specified at +12 V, ± 5 V, +5 V, and +3 V
input voltages up to the supply level when off, and exhibits • V+ to V- analog signal range
break before switching action. • CMOS / TTL compatible
Fabricated with advanced CMOS technology, the parts • Control logic input can be over V+
provide low on resistance and fast switching speed with low
power dissipation. • 8 pin TSSOP and 8 pin SOIC packages
The DG417LE, DG418LE, DG419LE operating temperature • Material categorization: for definitions of compliance
range is -40 °C to +85 °C and devices are available in 8 lead please see www.vishay.com/doc?99912
TSSOP and SOIC packages. Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
APPLICATIONS
• Data acquisition systems
• Medical instruments
• Precision instruments
• Communications systems
• Automated test equipment
• Sample and hold circuit
• Audio and video signal routing
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

DG417LE, DG418LE DG419LE
Dual-in-line, MSOP-8 and SOIC-8 Dual-in-line, MSOP-8 and SOIC-8
NC/NO 1 8 COM COM 1 8 NO
Not connected 2 7 V- NC 2 7 V-
GND 3 6 IN GND 3 6 IN
V+ 4 5 VL V+ 4 5 VL
Top view Top view
TRUTH TABLE (DG417LE, DG418LE) TRUTH TABLE (DG419LE)

LOGIC DG417LE DG418LE LOGIC NC NO
0 On Off 0 On Off
1 Off On 1 Off On
ORDERING INFORMATION (DG417LE, DG418LE) ORDERING INFORMATION (DG419LE)

TEMP. RANGE PACKAGE PART NUMBER TEMP. RANGE PACKAGE PART NUMBER
DG417LEDY-T1-GE4 8-pin narrow SOIC DG419LEDY-T1-GE4
8-pin narrow SOIC -40 °C to +85 °C
DG418LEDY-T1-GE4 8-pin MSOP DG419LEDQ-T1-GE3
-40 °C to +85 °C
DG417LEDQ-T1-GE3
8-pin MSOP
DG418LEDQ-T1-GE3
S18-0428-Rev. C, 23-Apr-18 1 Document Number: 76432

For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Downloaded from Arrow.com.
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ABSOLUTE MAXIMUM RATINGS

PARAMETER LIMIT UNIT
V+, VL, IN reference to V- -0.3 to 18
V+ reference to GND -0.3 to 18
GND reference to V- -0.3 to 18 V
-0.3 to (V+ + 0.3)
COM, NC, NO reference to V- a
or 30 mA, whichever occurs first
Continuous current (any terminal) 30
mA
Peak current, S or D (pulsed 1 ms, 10 % duty cycle) 100
Storage temperature (DQ, DY suffix) -65 to +150 °C
8-pin MSOP c 320
Power dissipation (packages) b mW
8-pin SOIC c 400
ESD / HBM JS-001 2000
V
ESD / CDM JS-002 2000
Latch up JESD78 300 mA
Notes
a. Signals on NC, NO, or COM exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings
b. All leads welded or soldered to PC board
c. Derate 6.5 mW/°C above 25 °C



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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SPECIFICATIONS (Single supply 12 V)

TEST CONDITIONS D SUFFIX LIMITS
UNLESS OTHERWISE SPECIFIED -40 °C to +85 °C
PARAMETER SYMBOL TEMP. b TYP. c UNIT
V+ = 12 V, V- = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 V f MIN. d MAX. d
Analog Switch
Analog signal range e VANALOG Full - 0 12 V
V+ = 10.8 V, V- = 0 V Room 6 - 7
INO, INC = 5 mA, VCOM = 2 V / 9 V,
DG417LE, DG418LE only Full - - 9
Drain-source
RDS(on) 
on-resistance V+ = 10.8 V, V- = 0 V Room 11 - 14
INO, INC = 5 mA, VCOM = 2 V / 9 V,
DG419LE only Full - - 18
INO(off) Room ± 0.002 -2 2

INC(off) VCOM = 1 V / 11 V Full - -10 10
Switch off leakage current
VNO, VNC = 11 V / 1 V Room ± 0.003 -2 2
ICOM(off) nA
Full - -10 10
Room ± 0.006 -2 2
Switch on leakage current ICOM(on) VNO, VNC = VCOM = 11 V / 1 V
Full - -10 10
Digital Control
Input current IINL or IINH Full 0.02 -1 1 μA
Dynamic Characteristics
Room 20 - 38
Turn-on time tON
RL = 300 , CL = 35 pF Full - - 40
VNO, VNC = 5 V Room 15 - 32
Turn-off time tOFF ns
Full - - 35
DG419LE only, VNC, VNO = 5 V
Break-before-make time tBBM Room 7 - -
RL = 300 , CL = 35 pF
Charge injection e QINJ VGEN = 0 V, RGEN = 0 , CL = 1 nF Room 26 - - pC
Off-isolation e OIRR Room -68 - -
RL = 50 , CL = 5 pF, f = 1 MHz dB
Channel-to-channel crosstalk e XTALK Room -72 - -
CNO(off)
Source off capacitance e VIN = 0 V or V+, f = 1 MHz, Room 11 - -
CNC(off)
DG417LE,DG418LE only
Drain-on capacitance e CON Room 32 - -
pF
e CNO(off)
Source off capacitance VIN = 0 V or V+, f = 1 MHz, Room 6 - -
CNC(off)
DG419LE only
Power Supplies
Room 0.00009 - 1
Positive supply current I+
Full - - 5
Room -0.00009 -1 -
Negative supply current I-
Full - -5 -
VIN = 0 V or VL μA
Room 0.00002 - 1
Logic supply current IL
Full - - 5
Room -0.00002 -1 -
Ground current IGND
Full - -5 -

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SPECIFICATIONS (Dual supply ± 5 V)

V+ = 5 V, V- = -5 V
Analog Switch
Analog signal range e VANALOG Full - -5 5 V
V+ = 5 V, V- = -5 V Room 6 - 8
INO, INC = 5 mA, VCOM = ± 3.5 V
DG417LE / DG418LE only Full - - 10
Drain-source
RDS(on) 
on-resistance V+ = 5 V, V- = -5 V Room 12 - 15
INO, INC = 5 mA, VCOM = ± 3.5 V
INO(off) Room ± 0.001 -2 2

INC(off) V+ = 5.5 V, V- = -5.5 V Full - -10 10
Switch off VCOM = ± 4.5 V
leakage current a Room ± 0.002 -2 2
ICOM(off) VNO, VNC = ± 4.5 V nA
Full - -10 10
Channel on  V+ = 5.5 V, V- = -5.5 V Room ± 0.003 -2 2
ICOM(on)
leakage current a VNO, VNC = VCOM = ± 4.5 V Full - -10 10
Digital Control
Input current a IINL or IINH Full 0.02 -1 1 μA
Room 21 - 38
Turn-on time e tON
RL = 300 , CL = 35 pF Full - - 40
VNO, VNC = ± 3.5 V Room 20 - 45
Turn-off time e tOFF
Full - - 50
ns
e DG419LE only, VNO, VNC = 3.5 V
Break-before-make time tBBM Room 7 - -
RL = 300 , CL = 35 pF
RL = 300 , CL = 35 pF
Transition time tTRANS Room 21 - -
VS1 = ± 3.5 V, VS2 = ± 3.5 V
Charge injection e QINJ VGEN = 0 V, RGEN = 0 , CL = 1 nF Room -17 - - pC
RL = 50 , CL = 5 pF, f = 1 MHz dB
CNO(off)
Source off capacitance e VIN = 0 V or V+, f = 1 MHz Room 11 - -
CNC(off)
DG417LE / DG418LE only
pF
e CNO(off)
Source off capacitance VIN = 0 V or V+, f = 1 MHz Room 6 - -
CNC(off)
DG419LE only
Power Supplies
Room 0.00007 - 1
Positive supply current e I+
Full - - 5
Room -0.00009 -1 -
Negative supply current e I-
Full - -5 -
VIN = 0 V or VL μA
e
Room 0.00002 - 1
Logic supply current IL
Full - - 5
Room -0.00003 -1 -
Ground current e IGND
Full - -5 -

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V+ = 5 V, V- = 0 V
Analog Switch
V+ = 4.5 V, INO, INC = 5 mA Room 12 - 16
VCOM = 1 V, 3.5 V
Drain-source
RDS(on) 
on-resistance e V+ = 4.5 V, INO, INC = 5 mA Room 24 - 35
VCOM = 1 V, 3.5 V
INO(off) Room ± 0.002 -1 1

INC(off) V+ = 5.5 V, V- = 0 V Full - -10 10
Switch off VCOM = 1 V / 4.5 V
ICOM(off) VNO, VNC = 4.5 V / 1 V nA
Full - -10 10
Switch on  V+ = 5.5 V, V- = 0 V Room ± 0.003 -1 1
ICOM(on)
leakage current a VNO, VNC = VCOM = 1 V / 4.5 V Full - -10 10
Digital Control
Room 29 - 46
Turn-on time e tON
RL = 300 , CL = 35 pF Full - - 49
VNO, VNC = 3.5 V Room 16 - 28
Turn-off time e tOFF ns
Full - - 32
DG419LE only, VNO, VNC = 3.5 V
Break-before-make time e tBBM Room 16 - -
RL = 300 , CL = 35 pF
RL = 50 , CL = 5 pF, f = 1 MHz dB
CNO(off)
CNC(off)
pF
CNO(off)
CNC(off)
DG419LE only
Power Supplies
Room 0.00006 - 1
Full - - 5
Room -0.00006 -1 -
Full - -5 -
VIN = 0 V or VL μA
Room 0.00002 - 1
Logic supply current e IL
Full - - 5
Room -0.00002 -1 -
Full - -5 -

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UNLESS OTHERWISE -40 °C to +85 °C
PARAMETER SYMBOL SPECIFIED TEMP. b TYP. c UNIT
V+ = 3 V, V- = 0 V MIN. d MAX. d
VL = 3 V, VIN = 2 V, 0.4 V f
Analog Switch
V+ = 2.7 V, V- = 0 V Room 22 - 34
INO, INC = 5 mA, VCOM = 0.5 V, 2.2 V
Drain-source
RDS(on) 
on-resistance V+ = 2.7 V, V- = 0 V Room 43 - 68
INO, INC = 5 mA, VCOM = 0.5 V, 2.2 V
INO(off) Room ± 0.002 -1 1

INC(off) V+ = 3.3 V, V- = 0 V
Switch off  VCOM = 1 V, 2 V,
Full - -10 10
ICOM(off) VNO, VNC = 2 V, 1 V nA
Full - -10 10
Channel on  V+ = 3.3 V, V- = 0 V Room ± 0.002 -1 1
ICOM(on)
leakage current a VNO, VNC = VCOM = 1 V, 2 V Full - -10 10
Digital Control
Room 59 - 77
Turn-on time tON
RL = 300 , CL = 35 pF Full - - 81
VNO, VNC = 1.5 V Room 33 - 54
Turn-off time tOFF ns
Full - - 69
DG419LE only, VNO, VNC = 1.5 V
Break-before-make time e tBBM Room 31 - -
RL = 300 , CL = 35 pF
RL = 50 , CL = 5 pF, f = 1 MHz dB
CNO(off)
CNC(off)
e
Channel on capacitance CD(on) Room 35 - -
pF
e CNO(off)
Source off capacitance VIN = 0 V or V+, f = 1 MHz Room 8 - -
CNC(off)
DG419LE only
Channel on capacitance e CD(on) Room 23 - -
Power Supplies
Room 0.00005 - 1
Full - - 5
Room -0.00007 -1 -
Full - -5 -
VIN = 0 V or VL μA
Room 0.00002 - 1
Logic supply current e IL
Full - - 5
Room -0.00002 -1 -
Full - -5 -
Notes
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test
b. Room = 25 °C, full = as determined by the operating temperature suffix
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
e. Guaranteed by design, not subject to production test
f. VIN = input voltage to perform proper function

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title Axis Title

70 10000 16 10000
V+ = +2.7 V DG419LE DG419LE
IS = 5 mA IS = 5 mA
60
14
RON - On-Resistance (Ω)

50 V+ = +3.0 V
1000 1000
12 V± = ± 4.5 V
2nd line
40
1st line
1st line
2nd line
2nd line
V+ = +4.5 V
30 V+ = +5.0 V 10
V+ = +10.8 V 100 100
20
V± = ± 5.5 V
8
10
V+ = +12 V V± = ± 5.0 V
0 10 6 10
0 2 4 6 8 10 12 14 -6 -4 -2 0 2 4 6
VCOM - Analog Voltage (V) VCOM - Analog Voltage (V)
2nd line 2nd line
RDS(on) vs. VCOM and Supply Voltage RDS(on) vs. VCOM and Supply Voltage

40 10000 8 10000
V+ = +2.7 V DG417/8LE DG417/8LE
35 IS = 5 mA 7.5 IS = 5 mA
30 V+ = +3.0 V 7
1000 1000
25 6.5
2nd line
1st line
2nd line
2nd line
V+ = +4.5 V V± = ± 4.5 V
20 6
V+ = +5.0 V
15 5.5
V+ = +10.8 V 100 100
10 5
V± = ± 5.5 V
5 4.5
V+ = +12 V V± = ± 5.0 V
0 10 4 10
0 2 4 6 8 10 12 14 -6 -4 -2 0 2 4 6
2nd line 2nd line
RDS(on) vs. VCOM and Supply Voltage RDS(on) vs. VCOM and Supply Voltage

10000 25 10000
20
+125 °C +25 °C 20 +125 °C +25 °C

15 +85 °C +85 °C
1000 1000
15
2nd line
2nd line
1st line
1st line
2nd line
2nd line
10
10
100 100
5 5
DG419LE -40 °C DG419LE -40 °C
V+ = +10.8 V V± = ± 5 V
IS = 5 mA IS = 5 mA
0 10 0 10
0 1 2 3 4 5 6 7 8 9 10 11 12 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
2nd line 2nd line
RDS(on) vs. Analog Voltage and Temperature RDS(on) vs. Analog Voltage and Temperature

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40 10000 80 10000
DG419LE DG419LE +85 °C
V+ = +4.5 V 70 V+ = +2.7 V
35 IS = 5 mA IS = 5 mA
+125 °C

+85 °C 60
30 1000 +125 °C 1000
2nd line
2nd line
50
1st line
1st line
2nd line
2nd line
25
40
20 100 +25 °C 100
+25 °C 30
15 20
-40 °C -40 °C
10 10 10 10
0 1 2 3 4 5 0 1 2 3
2nd line 2nd line

12 10000 12 10000
11 11
+125 °C +125 °C
10 10
+85 °C
9 +85 °C 9
8 1000 8 1000
7 7
2nd line
2nd line
1st line
1st line
2nd line
2nd line
6 6
5 5
4 100 4 100
3 +25 °C 3 +25 °C
2 DG417/8LE 2 DG417/8LE
V+ = +10.8 V V± = ± 5V -40 °C
1 - 40 °C 1
IS = 5 mA IS = 5 mA
0 10 0 10
0 1 2 3 4 5 6 7 8 9 10 11 12 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
2nd line 2nd line

20 10000 10000
DG417/8LE DG417/8LE
19 55
V+ = +4.5 V V+ = +2.7 V
18 IS = 5 mA +125 °C IS = 5 mA
17 +85 °C
16 45
15 1000 +125 °C 1000
+85 °C
14
2nd line
2nd line
1st line
1st line
2nd line
2nd line
13 35
12
11
25
10 +25 °C 100 100
9
8 15
7
6 +25 °C
- 40 °C -40 °C
5 10 5 10
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3
2nd line 2nd line

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6000 10000 6000 10000
INO/NC(OFF), VCOM = 1 V, VNO/NC = 11 V INO/NC(OFF), VCOM = -4.5 V, VNO/NC = 4.5 V
4000 4000
INO/NC(OFF), VCOM = 11 V, VNO/NC = 1 V INO/NC(OFF), VCOM = 4.5 V, VNO/NC = -4.5 V
2000 2000
Leakage Current (pA)

0 0
1000 1000
-2000 ICOM(OFF), VCOM = 11 V, VNO/NC = 1 V -2000 ICOM(OFF), VCOM = 4.5 V, VNO/NC = -4.5 V
2nd line
2nd line
1st line
1st line
2nd line
2nd line
-4000 -4000
ICOM(OFF), VCOM = 1 V, VNO/NC = 11 V ICOM(OFF), VCOM = -4.5 V, VNO/NC = 4.5 V
-6000 -6000
100 100
-8000 -8000
-10 000 ICOM(ON), VCOM/NO/NC = 11 V -10 000 ICOM(ON), VCOM/NO/NC = 4.5 V
-12 000 ICOM(ON), VCOM/NO/NC = 1 V

-12 000 ICOM(ON), VCOM/NO/NC = -4.5 V
V+ = +12 V V ± = ± 5.5 V
-14 000 10 -14 000 10
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
Temperature (°C) Temperature (°C)
2nd line 2nd line
Leakage Current vs. Temperature Leakage Current vs. Temperature

6000 10000 6000 10000
INO/NC(OFF), VCOM = 1 V, VNO/NC = 4.5 V INO/NC(OFF), VCOM = 1 V, VNO/NC = 2 V
4000 INO/NC(OFF), VCOM = 4.5 V, VNO/NC = 1 V 4000

INO/NC(OFF), VCOM = 2 V, VNO/NC = 1 V
2000 ICOM(OFF), VCOM = 4.5 V, VNO/NC = 1 V 2000 ICOM(OFF), VCOM = 2 V, VNO/NC = 1 V

1000 1000
2nd line
2nd line
0 0
1st line
1st line
2nd line
2nd line
-2000 -2000
ICOM(OFF), VCOM = 1 V, VNO/NC = 4.5 V
100 ICOM(OFF), VCOM = 1 V, VNO/NC = 2 V 100
-4000 -4000
ICOM(ON), VCOM/NO/NC = 4.5 V ICOM(ON), VCOM/NO/NC = 2 V
-6000 -6000
V+ = +5.5 V ICOM(ON), VCOM/NO/NC = 1 V V+ = +3.3 V ICOM(ON), VCOM/NO/NC = 1 V
-8000 10 -8000 10
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
2nd line 2nd line
Leakage Current vs. Temperature Leakage Current vs. Temperature

350 10000 10 10000
V+ = +12 V Loss
0
300 IN = V+ or GND
-10
I+ - Supply Current (nA)
Loss, OIRR, XTALK (dB)
-20
250
1000 -30 1000
-40
2nd line
2nd line
200
1st line
1st line
2nd line
2nd line
OIRR
-50
150 -60
XTALK
100 -70 100
100
-80
50 -90
-100 V± = ± 5 V
0 10 -110 10
-40 -20 0 20 40 60 80 100 120 140 100K 1M 10M 100M 1G
Temperature (°C) Frequency (Hz)
2nd line 2nd line
Supply Current vs. Temperature Insertion Loss, Off-Isolation Crosstalk vs. Frequency

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10 000 10000 10 000 10000
V± = ± 5 V I+
1000 1000
100 100
I+ - Supply Current (μA)

I+ - Supply Current (μA)
V+ = +12 V I-
10 1000 10 1000
V+ = +5 V
2nd line
2nd line
2nd line
1st line
1st line
2nd line
1 1
V+ = +3 V
0.1 0.1
0.01 100 0.01 100
0.001 0.001 IGND
0.0001 0.0001
0.00001 10 0.00001 10
10 100 1000 10K 100K 1M 10M 10 1000 100K 10M
Input Switching Frequency (Hz) Input Switching Frequency (Hz)
2nd line 2nd line
Supply Current vs. Input Switching Frequency Supply Current vs. Input Switching Frequency

80 10000 30 10000
tON, tOFF - Switching Time (ns)
70
tON, tOFF - Switching Time (ns)
V+ = +3 V, tON
25
60 V± = ±5 V, tON
1000 1000
2nd line
50 20
2nd line
2nd line
1st line
1st line
2nd line
V+ = +12 V, tON
40
V+ = +5 V, tON V± = ±5 V, tOFF
30 15
100 100
V+ = +3 V, tOFF V+ = +12 V, tOFF
20
10
10 V+ = +5 V, tOFF
0 10 5 10
-50 0 50 100 150 -50 0 50 100 150
2nd line 2nd line
Switching Time vs. Temperature Switching Time vs. Temperature

2.2 10000 3.6 10000
-40 °C to +125 °C 3.4 -40 °C to +125 °C
2.0 3.2
VIN - Switching Threshold (V)
VIN - Switching Threshold (V)
VINH 3.0
1.8 2.8
2.6 VINH
1000 1000
1.6 2.4
2nd line
2nd line
1st line
1st line
2.2
2nd line
2nd line
1.4 2.0
VINL VINL
1.8
1.2 1.6
100 1.4 100
1.0 1.2
1.0
0.8 VL = V+ 0.8
V- = -V+ VL = V+
0.6
0.6 10 0.4 10
2 3 4 5 6 7 8 9 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
V+ - Dual Supply Voltage (V) V+ - Single Supply Voltage (V)
2nd line 2nd line
Switching Threshold vs. Dual Supply Voltage Switching Threshold vs. Single Supply Voltage

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10000 40.0 10000
DG417/8LE DG419LE
5.0
V+ = 3 V 30.0
V+ = 5 V
QINJ - Charge Injection (pC)
QINJ - Charge Injection (pC)

20.0
-5.0
1000 10.0 V+ = 3 V 1000
2nd line
2nd line
1st line
2nd line
1st line
2nd line
-15.0 V± = ±5 V 0 V± = ± 5 V
-10.0
-25.0
100 -20.0 V+ = 16 V 100
V+ = 12 V V+ = 5 V
V+ = 16 V -30.0
-35.0
-40.0 V+ = 12 V
-45.0 10 -50.0
-10 -5 0 5 10 15 20 -10 -5 0 5 10 15 20 10
VNC/NO - Analog Voltage (V) VNC/NO - Analog Voltage (V)
2nd line
Charge Injection vs. Analog Voltage Charge Injection vs. Analog Voltage
Axis Title
10 000 10000
1000 VL = V+
100
IL - Supply Current (μA)
V+ = 12 V
10 1000
2nd line
2nd line
1st line
1 V+ = 5 V
0.1
0.01 V+ = 3 V 100
0.001
0.0001
0.00001 10
0 2.0 4.0 6.0 8.0 10.0 12.0 14.0
VIN (V)
2nd line
Supply Current vs. Enable Input Voltage

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SCHEMATIC DIAGRAM (Typical channel)
V+
VL
NC/NO
Level Body PCH Body

IN IN buffer shifter snatcher snatcher
GND
COM
VIN
TEST CIRCUITS
VL V+ Logic V INH tr < 5 ns
input 50 % tf < 5 ns
V INL
Switch VL V+ Switch tOFF
input output
NO or NC COM
V IN V OUT
V OUT
90 % 0.9 x V OUT
IN
RL CL
300  35 pF 0V
GND V- Switch
output tON
V-
CL (includes fixture and stray capacitance)

Note
RL • Logic input waveform is inverted for switches that
V OUT = V IN
R L + R ON have the opposite logic sense control
Fig. 1 - Switching Time
VL V+
Logic V INH
tr < 5 ns
VL V+ input tf < 5 ns
COM V INL
NO
V NO VO
NC
V NC RL CL
300  35 pF V NC = V NO
IN VO 90 %
GND V- Switch
0V
output tD tD
V-
Fig. 2 - Break-Before-Make (DG419LE)

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Vishay Siliconix
TEST CIRCUITS
+5V + 15 V
VL V+ tr < 5 ns
Logic V INH tf < 5 ns
NO or NC COM 50 %
V S1 input
VO V INL
NC or NO
V S2 tTRANS tTRANS
RL CL
300  35 pF V S1
IN
V 01 90 %
GND V-
Switch
output
10 %
V 02
V- V S2
RL
V O = VS
R L + R ON
Fig. 3 - Transition Time (DG419LE)
VL V+ VO
VO
VL V+
Rg
NO or NC COM IN
VO OFF ON OFF
Vg IN CL
1 nF
Q = VO x CL
GND V-
IN dependent on switch configuration input polarity determined
by sense of switch.
V-
VIN = 0 - V+
Fig. 4 - Charge Injection
VL V+
C C
VL V+
VS VIN NO or NC COM
Rg = 50  50 
IN
0 V or 2.4 V
NC or NO
VOUT
GND V- C
VOUT
XTA LK isolation = 20 log
VIN V-
C = RF bypass
Fig. 5 - Crosstalk (DG419LE)

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Vishay Siliconix
TEST CIRCUITS
VL V+
C C
NO or NC COM
R g = 50 
RL
IN 50 
0 V, 2.4 V
GND V- C
V-
V COM
Off isolation = 20 log
V NO/NC
C = RF bypass
Fig. 6 - Off Isolation
VL V+
C C
VL V+
COM
Meter
IN HP4192A
impedance
0 V, 2.4 V analyzer
NO or NC or equivalent
GND V- f = 1 MHz
C
V-
Fig. 7 - Channel Capacitances

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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76432.

Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019 1 Document Number: 91000

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DG417LE, DG418LE, DG419LE

± 5 V, +5 V, and +3 V. 11  for DG419LE Available

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

NC/NO 1 8 COM COM 1 8 NO

Top view Top view

TRUTH TABLE (DG417LE, DG418LE) TRUTH TABLE (DG419LE)

ORDERING INFORMATION (DG417LE, DG418LE) ORDERING INFORMATION (DG419LE)

S18-0428-Rev. C, 23-Apr-18 1 Document Number: 76432

ABSOLUTE MAXIMUM RATINGS

S18-0428-Rev. C, 23-Apr-18 2 Document Number: 76432

SPECIFICATIONS (Single supply 12 V)

INO(off) Room ± 0.002 -2 2

S18-0428-Rev. C, 23-Apr-18 3 Document Number: 76432

SPECIFICATIONS (Dual supply ± 5 V)

INO(off) Room ± 0.001 -2 2

S18-0428-Rev. C, 23-Apr-18 4 Document Number: 76432

SPECIFICATIONS (Single supply 5 V)

INO(off) Room ± 0.002 -1 1

S18-0428-Rev. C, 23-Apr-18 5 Document Number: 76432

SPECIFICATIONS (Single supply 3 V)

INO(off) Room ± 0.002 -1 1

S18-0428-Rev. C, 23-Apr-18 6 Document Number: 76432

Axis Title Axis Title

RON - On-Resistance (Ω)

Axis Title Axis Title

RON - On-Resistance (Ω)

Axis Title Axis Title

+125 °C +25 °C 20 +125 °C +25 °C

RON - On-Resistance (Ω)

S18-0428-Rev. C, 23-Apr-18 7 Document Number: 76432

Axis Title Axis Title

RON - On-Resistance (Ω)

Axis Title Axis Title

RON - On-Resistance (Ω)

Axis Title Axis Title

S18-0428-Rev. C, 23-Apr-18 8 Document Number: 76432

Axis Title Axis Title

Leakage Current (pA)

-12 000 ICOM(ON), VCOM/NO/NC = 1 V

Leakage Current vs. Temperature Leakage Current vs. Temperature

Axis Title Axis Title

4000 INO/NC(OFF), VCOM = 4.5 V, VNO/NC = 1 V 4000

Leakage Current (pA)

2000 ICOM(OFF), VCOM = 4.5 V, VNO/NC = 1 V 2000 ICOM(OFF), VCOM = 2 V, VNO/NC = 1 V

Leakage Current vs. Temperature Leakage Current vs. Temperature

Axis Title Axis Title

Loss, OIRR, XTALK (dB)

S18-0428-Rev. C, 23-Apr-18 9 Document Number: 76432

Axis Title Axis Title

I+ - Supply Current (μA)

Axis Title Axis Title

Switching Time vs. Temperature Switching Time vs. Temperature

Axis Title Axis Title

VIN - Switching Threshold (V)

S18-0428-Rev. C, 23-Apr-18 10 Document Number: 76432

Axis Title Axis Title

QINJ - Charge Injection (pC)

Supply Current vs. Enable Input Voltage

S18-0428-Rev. C, 23-Apr-18 11 Document Number: 76432

Level Body PCH Body

CL (includes fixture and stray capacitance)

Fig. 1 - Switching Time

CL (includes fixture and stray capacitance)