FDH5500 N-Channel UltraFET Power MOSFET

June 2008

FDH5500
N-Channel UltraFET Power MOSFET
55V, 75A, 7mΩ

Features Applications
„ Typ rDS(on) = 5.2mΩ at VGS = 10V, ID = 75A „ DC Linear Mode Control
„ Typ Qg(10) = 118nC at VGS = 10V „ Solenoid and Motor Control
„ Simulation Models
„ Switching Regulators
-Temperature Compensated PSPICE and SABERTM
Models „ Automotive Systems
„ Peak Current vs Pulse Width Curve
„ UIS Rating Curve

„ Related Literature
-TB334, “Guidelines for Soldering Surface Mount
Componets to PC Boards“
„ Qualified to AEC Q101

„ RoHS Compliant

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDH5500 Rev. A1
 FDH5500 N-Channel UltraFET Power MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain to Source Voltage (Note 1) 55 V
VDGR Drain to Gate Voltage (RGS = 20kΩ) (Note 1) 55 V
VGS Gate to Source Voltage ±20 V
Drain Current Continuous (TC < 135oC, VGS = 10V) 75
ID A
Pulsed See Figure 4
EAS Single Pulse Avalanche Energy (Note 2) 864 mJ
Power Dissipation 375 W
PD
Dreate above 25oC 2.5 W/oC
TJ, TSTG Operating and Storage Temperature -55 to + 175
o
TL Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec) 300 C
Tpkg Max. Package Temp. for Soldering (Package Body for 10sec) 260

Thermal Characteristics
RθJC oC/W
Thermal Resistance Junction to Case 0.4
RθJA Thermal Resistance Junction to Ambient TO-247, 1in2 copper pad area 30 o
C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDH5500 FDH5500 TO-247 Tube N/A 30 units

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 55 - - V
VDS = 50V, VGS = 0V - - 1
IDSS Zero Gate Voltage Drain Current µA
VDS = 45V TC = 150oC - - 250
IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2 2.9 4 V
rDS(on) Drain to Source On Resistance ID = 75A, VGS= 10V - 5.2 7 mΩ

Dynamic Characteristics
Ciss Input Capacitance - 3565 - pF
VDS = 25V, VGS = 0V,
Coss Output Capacitance - 1310 - pF
f = 1MHz
Crss Reverse Transfer Capacitance - 395 - pF
Qg(TOT) Total Gate Charge at 20V VGS = 0 to 20V - 206 268 nC
Qg(10) Total Gate Charge at 10V VGS = 0 to 10V VDD = 30V - 118 153 nC
ID = 75A
Qg(TH) Threshold Gate Charge VGS = 0 to 2V - 6.2 8.1 nC
RL = 0.4Ω
Qgs Gate to Source Gate Charge Ig = 1.0mA - 17.8 - nC
Qgd Gate to Drain “Miller“ Charge - 51 - nC

FDH5500 Rev. A1 2 www.fairchildsemi.com

 FDH5500 N-Channel UltraFET Power MOSFET
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Switching Characteristics
ton Turn-On Time - - 185 ns
td(on) Turn-On Delay Time - 13.7 - ns
VDD = 30V, ID = 75A,
tr Rise Time - 102 - ns
RL = 0.4Ω, VGS = 10V,
td(off) Turn-Off Delay Time RGS = 2.5Ω - 34 - ns
tf Fall Time - 22 - ns
toff Turn-Off Time - - 91 ns

Drain-Source Diode Characteristics

VSD Source to Drain Diode Voltage ISD = 75A - 1 1.25 V
trr Reverse Recovery Time - 60 78 ns
IF = 75A, dISD/dt = 100A/µs
Qrr Reverse Recovery Charge - 77 100 nC
Notes:
1: Starting TJ = 25oC to175oC.
2: Starting TJ = 25oC, L = 0.48mH, IAS = 60A

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.

FDH5500 Rev. A1 3 www.fairchildsemi.com

 FDH5500 N-Channel UltraFET Power MOSFET
Typical Characteristics

1.2 180
POWER DISSIPATION MULTIPLIER

CURRENT LIMITED
1.0 150 BY PACKAGE

ID, DRAIN CURRENT (A)

0.8 120 VGS = 10V

0.6 90

0.4 60

0.2 30

0.0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC) TC, CASE TEMPERATURE(oC)

Figure 1. Normalized Power Dissipation vs Case Figure 2. Maximum Continuous Drain Current vs
Temperature Case Temperature
2

1 DUTY CYCLE - DESCENDING ORDER

NORMALIZED THERMAL
IMPEDANCE, ZθJC

D = 0.50 PDM
0.20
0.10
0.05
0.1 t1
0.02
0.01 t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TC

SINGLE PULSE
0.01
-5 -4 -3 -2 -1
10 10 10 10 10 1 10
t, RECTANGULAR PULSE DURATION(s)

Figure 3. Normalized Maximum Transient Thermal Impedance

10000
TC = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
IDM, PEAK CURRENT (A)

CURRENT AS FOLLOWS:
1000 175 - TC
I = I2
150

100

SINGLE PULSE
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION(s)

Figure 4. Peak Current Capability

FDH5500 Rev. A1 4 www.fairchildsemi.com

 FDH5500 N-Channel UltraFET Power MOSFET
Typical Characteristics

1000 1000
If R = 0

IAS, AVALANCHE CURRENT (A)

tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
ID, DRAIN CURRENT (A)

If R ≠ 0
100us tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
100

1ms
10 STARTING TJ = 25oC
10ms
10
DC
1 STARTING TJ = 150oC
OPERATION IN THIS SINGLE PULSE
AREA MAY BE TJ = MAX RATED
LIMITED BY rDS(on) TC = 25oC
0.1 1
0.01 0.1 1 10 100 1000 5000
1 10 100 200 tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching
Capability

160
160 VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX PULSE DURATION = 80µs
ID, DRAIN CURRENT (A)

VDD = 5V DUTY CYCLE = 0.5% MAX

120
ID, DRAIN CURRENT (A)

120
VGS = 6V VGS = 5.5V

80
80

TJ = 175oC VGS = 5V
40
40 TJ = -55oC
VGS = 4.5V
TJ = 25oC
0
0 0 1 2 3 4 5
0 1 2 3 4 5 6 7
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

40 2.2
DRAIN TO SOURCE ON-RESISTANCE

ID = 75A PULSE DURATION = 80µs

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX 2.0
rDS(on), DRAIN TO SOURCE

DUTY CYCLE = 0.5% MAX

ON-RESISTANCE (mΩ)

30 1.8
NORMALIZED

1.6
20 1.4
TJ = 175oC
1.2
10 1.0

o 0.8 ID = 75A
TJ = 25 C
VGS = 10V
0 0.6
4 6 8 10 -80 -40 0 40 80 120 160 200
VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE(oC)

Figure 9. Drain to Source On-Resistance Figure 10. Normalized Drain to Source On

Variation vs Gate to Source Voltage Resistance vs Junction Temperature

FDH5500 Rev. A1 5 www.fairchildsemi.com

 FDH5500 N-Channel UltraFET Power MOSFET
Typical Characteristics

1.2 1.20
VGS = VDS ID = 1mA

NORMALIZED DRAIN TO SOURCE

ID = 250µA 1.15
THRESHOLD VOLTAGE

BREAKDOWN VOLTAGE
1.0
NORMALIZED GATE

1.10

1.05
0.8
1.00

0.95
0.6
0.90

0.4 0.85
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC) TJ, JUNCTION TEMPERATURE (oC)

Figure 11. Normalized Gate Threshold Voltage vs Figure 12. Normalized Drain to Source
Junction Temperature Breakdown Voltage vs Junction Temperature

10000 10
VGS, GATE TO SOURCE VOLTAGE(V) ID = 75A
CAPACITANCE (pF)

8
VDD = 20V VDD = 30V
Ciss
6 VDD = 40V
1000
4
Coss

2
f = 1MHz
VGS = 0V Crss
100 0
0.1 1 10 80 0 20 40 60 80 100 120 140
VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC)

Figure 13. Capacitance vs Drain to Source Figure 14. Gate Charge vs Gate to Source Voltage
Voltage

FDH5500 Rev. A1 6 www.fairchildsemi.com

 FDH5500 N-Channel UltraFET Power MOSFET
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Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status Definition
This datasheet contains the design specifications for product development.
Formative or In Design
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
First Production lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
Full Production
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
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Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34

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