FDMC8878 N-Channel Power Trench® MOSFET

February 2007

FDMC8878 tm
N-Channel Power Trench® MOSFET
30V, 16.5A, 14mΩ
Features General Description
„ Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of
„ Max rDS(on) = 17mΩ at VGS = 4.5V, ID = 8.7A Fairchild Semiconductor‘s advanced Power Trench
process. It has been optimized for power management
„ Low Profile - 1mm max in Power 33 applications.
„ RoHS Compliant

Application
„ DC - DC Conversion

Bottom Top

8 D
7 D D 5 4 G
6 D
5
D D 6 3 S

D 7 2 S
1 G
2
3 S D 8 1 S
4 S
S
Power 33

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 16.5
-Continuous (Silicon limited) TC = 25°C 38
ID A
-Continuous TA = 25°C (Note 1a) 9.6
-Pulsed 60
Power Dissipation TC = 25°C 31
PD W
Power Dissipation TA = 25°C (Note 1a) 2.1
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 4
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 60

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDMC8878 FDMC8878 Power 33 7” 8mm 3000 units

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDMC8878 Rev.D
 FDMC8878 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 V
∆BVDSS Breakdown Voltage Temperature
ID = 250µA, referenced to 25°C 20 mV/°C
∆TJ Coefficient
VDS = 24V, 1
IDSS Zero Gate Voltage Drain Current µA
VGS = 0V TJ = 125°C 100
IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1 1.7 3 V
∆VGS(th) Gate to Source Threshold Voltage
ID = 250µA, referenced to 25°C -5.7 mV/°C
∆TJ Temperature Coefficient
VGS = 10V, ID = 9.6A 9.6 14.0
rDS(on) Drain to Source On Resistance VGS = 4.5V, ID = 8.7A 12.1 17.0 mΩ
VGS = 10V, ID = 9.6A , TJ = 125°C 13.5 20.0
gFS Forward Transconductance VDS = 5V, ID = 9.6A 35 S

Dynamic Characteristics
Ciss Input Capacitance 925 1230 pF
VDS = 15V, VGS = 0V,
Coss Output Capacitance 190 255 pF
f = 1MHz
Crss Reverse Transfer Capacitance 120 180 pF
Rg Gate Resistance f = 1MHz 1.1 Ω

Switching Characteristics
td(on) Turn-On Delay Time 8 16 ns
VDD = 15V, ID = 9.6A
tr Rise Time 4 10 ns
VGS = 10V, RGEN = 6Ω
td(off) Turn-Off Delay Time 20 36 ns
tf Fall Time 3 10 ns
Qg(TOT) Total Gate Charge VGS = 10V , VDD = 15V , 18 26 nC
Qgs Gate to Source Gate Charge ID = 9.6A 2.8 nC
Qgd Gate to Drain “Miller” Charge 3.9 nC

Drain-Source Diode Characteristics

VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 9.6A (Note 2) 0.8 1.2 V
trr Reverse Recovery Time 23 35 ns
IF = 9.6A, di/dt = 100A/µs
Qrr Reverse Recovery Charge 14 21 nC

Notes:
1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b. 135°C/W when mounted on a
a. 60°C/W when mounted on
minimum pad of 2 oz copper
a 1 in2 pad of 2 oz copper

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

FDMC8878 Rev.D 2 www.fairchildsemi.com

 FDMC8878 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

60 2.5

DRAIN TO SOURCE ON-RESISTANCE

PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
50 VGS = 10V
ID, DRAIN CURRENT (A)

VGS = 3.5V
2.0
40 VGS = 3V VGS = 4V

NORMALIZED
VGS = 4.5V
VGS = 4.5V
VGS = 4V
1.5 VGS = 3.5V
30
VGS = 3V

20
1.0
10 VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0 0.5
0 1 2 3 4 0 10 20 30 40 50 60
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT(A)

Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6 30
DRAIN TO SOURCE ON-RESISTANCE

ID = 9.6A PULSE DURATION = 80µs

ID = 9.6A

SOURCE ON-RESISTANCE (mΩ)

VGS = 10V DUTY CYCLE = 0.5%MAX
1.4 rDS(on), DRAIN TO 25

1.2 20
NORMALIZED

TJ = 125oC

1.0 15

0.8 10
TJ = 25oC

0.6 5
-75 -50 -25 0 25 50 75 100 125 150 3 4 5 6 7 8 9 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to

vs Junction Temperature Source Voltage

60 100
IS, REVERSE DRAIN CURRENT (A)

PULSE DURATION = 80µs VGS = 0V

DUTY CYCLE = 0.5%MAX
50
10
ID, DRAIN CURRENT (A)

VDD = 5V
40
1
TJ = 25oC
30
TJ = 25oC TJ = 150oC
0.1
20
TJ = -55oC
TJ = 150oC TJ = -55oC
0.01
10

0 0.001
0 1 2 3 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

FDMC8878 Rev.D 3 www.fairchildsemi.com

 FDMC8878 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

10 3000
VGS, GATE TO SOURCE VOLTAGE(V)

ID = 9.6A VDD = 15V

Ciss
8
1000

CAPACITANCE (pF)
VDD = 10V
6
VDD = 20V Coss

Crss
2 100 f = 1MHz
VGS = 0V

0 50
0 5 10 15 20 0.1 1 10 30
Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

to Source Voltage

20 12
IAS, AVALANCHE CURRENT(A)

10

ID, DRAIN CURRENT (A)

10
8
VGS = 10V
TJ = 25oC
6
VGS = 4.5V
TJ = 125oC 4

2
o
RθJA = 60 C/W
1 0
0.01 0.1 1 10 80 25 50 75 100 125 150
o
tAV, TIME IN AVALANCHE(ms) TA, AMBIENT TEMPERATURE ( C)

Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain

Switching Capability Current vs Ambient Temperature

80 300
TA = 25oC
P(PK), PEAK TRANSIENT POWER (W)

100us VGS = 10V

FOR TEMPERATURES
100
ID, DRAIN CURRENT (A)

10
ABOVE 25oC DERATE PEAK
1ms
CURRENT AS FOLLOWS:
1 10ms 150 – T A
I = I25 -----------------------
125
100ms
10
0.1 OPERATION IN THIS 1s
AREA MAY BE 10s
LIMITED BY rDS(on) DC
SINGLE PULSE
0.01
TJ = MAX RATED
1 SINGLE PULSE
TA = 25oC

0.001 0.5
0.1 1 10 80 10
-3
10
-2 -1
10 10
0
10
1
10
2 3
10
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s)

Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation

FDMC8878 Rev.D 4 www.fairchildsemi.com

 FDMC8878 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
NORMALIZED THERMAL

0.2
IMPEDANCE, ZθJA

0.1
0.05
0.1 0.02
0.01 PDM

t1
t2
0.01 NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE PEAK TJ = PDM x ZθJA x RθJA + TA
0.003
-3 -2 -1 0 1 2 3
10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION (s)

Figure 13. Transient Thermal Response Curve

FDMC8878 Rev.D 5 www.fairchildsemi.com

FDMC8878 N-Channel Power Trench® MOSFET

www.fairchildsemi.com
6
FDMC8878 Rev.D
 FDMC8878 N-Channel Power Trench® MOSFET
TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FACT Quiet Series™ OCX™ SILENT SWITCHER® UniFET™
ActiveArray™ GlobalOptoisolator™ OCXPro™ SMART START™ VCX™
Bottomless™ GTO™ OPTOLOGIC® SPM™ Wire™
Build it Now™ HiSeC™ OPTOPLANAR™ Stealth™
CoolFET™ I2C™ PACMAN™ SuperFET™
CROSSVOLT™ i-Lo™ POP™ SuperSOT™-3
DOME™ ImpliedDisconnect™ Power247™ SuperSOT™-6
EcoSPARK™ IntelliMAX™ PowerEdge™ SuperSOT™-8
E2CMOS™ ISOPLANAR™ PowerSaver™ SyncFET™
EnSigna™ LittleFET™ PowerTrench® TCM™
FACT® MICROCOUPLER™ QFET® TinyBoost™
FAST® MicroFET™ QS™ TinyBuck™
FASTr™ MicroPak™ QT Optoelectronics™ TinyPWM™
FPS™ MICROWIRE™ Quiet Series™ TinyPower™
FRFET™ MSX™ RapidConfigure™ TinyLogic®
MSXPro™ RapidConnect™ TINYOPTO™
Across the board. Around the world.™ µSerDes™ TruTranslation™
The Power Franchise® ScalarPump™ UHC®
Programmable Active Droop™

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF
ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE
WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component is any component of a life support device or
intended for surgical implant into the body, or (b) support or sustain system whose failure to perform can be reasonably expected to cause
life, or (c) whose failure to perform when properly used in accordance the failure of the life support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be reasonably effectiveness.
expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I22

FDMC8878 Rev.D 7 www.fairchildsemi.com