Si7423DN

New Product Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY D TrenchFETr Power MOSFET
VDS (V) rDS(on) (W) ID (A) D New PowerPAKr Package
− Low Thermal Resistance, RthJC
0.018 @ VGS = −10 V −11.7
−30
− Low 1.07-mm Profile
0.030 @ VGS = −4.5 V −9.0
APPLICATIONS
D Battery Switch

PowerPAK 1212-8
S

3.30 mm S
3.30 mm
1
S
2
S
3
G G
4
D
8
D
7
D
6
D D
5

P-Channel MOSFET
Bottom View

Ordering Information: Si7423DN-T1—E3

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS −30
V
Gate-Source Voltage VGS "20

TA = 25_C −11.7 −7.4

Continuous Drain Current (TJ = 150_C)a ID
TA = 85_C −8.4 −5.4
A
Pulsed Drain Current IDM −30

continuous Source Current (Diode Conduction)a IS −3.2 −1.3

TA = 25_C 3.8 1.5

Maximum Power Dissipationa PD W
TA = 85_C 2.0 0.8

Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t v 10 sec 26 33
M i
Maximum ti t A bi ta
JJunction-to-Ambient RthJA
Steady State 65 81 C/W
_C/W
Maximum Junction-to-Case Steady State RthJC 1.9 2.4

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72582 www.vishay.com

S-32518—Rev. A, 08-Dec-03 1
Si7423DN
Vishay Siliconix New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA −1 −3 V

Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA

VDS = −30 V, VGS = 0 V −1

Zero Gate Voltage Drain Current IDSS mA
VDS = −30 V, VGS = 0 V, TJ = 85_C −5
On-State Drain Currenta ID(on) VDS v −5 V, VGS = −10 V −30 A
VGS = −10 V, ID = −11.7 A 0.014 0.018
On State Resistancea
Drain Source On-State
Drain-Source rDS(on)
DS( ) W
VGS = −4.5 V, ID = −9.0 A 0.023 0.030

Forward Transconductancea gfs VDS = −15 V, ID = −11.7 A 29 S

Diode Forward Voltagea VSD IS = −3.2 A, VGS = 0 V −0.76 −1.2 V

Dynamicb
Total Gate Charge Qg 37.5 56
Gate-Source Charge Qgs VDS = −15 V, VGS = −10 V, ID = −11.7 A 5.8 nC
Gate-Drain Charge Qgd 9.6

Gate Resistance Rg f = 1 MHz 5 W

Turn-On Delay Time td(on) 11 20

Rise Time tr 10 15
VDD = −15 V, RL = 15 W
Turn-Off Delay Time td(off) ID ^ −1 A, VGEN = −10 V, Rg = 6 W 74 110 ns
Fall Time tf 50 75
Source-Drain Reverse Recovery Time trr IF = −3.2 A, di/dt = 100 A/ms 30

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

30 30

VGS = 10 thru 4 V
25 25

20 20
I D − Drain Current (A)

I D − Drain Current (A)

15 15

3V
10 10
TC = 125_C

5 5
25_C
−55_C
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V)

www.vishay.com Document Number: 72582

2 S-32518—Rev. A, 08-Dec-03
 Si7423DN
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Drain Current Capacitance
0.040 3000

0.035
2500
r DS(on) − On-Resistance ( W )

0.030

C − Capacitance (pF)
Ciss
2000
0.025 VGS = 4.5 V

0.020 1500
VGS = 10 V
0.015
1000
0.010
Coss
500
0.005
Crss
0.000 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30

ID − Drain Current (A) VDS − Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

10 1.6

1.5
VDS = 15 V VGS = 10 V
V GS − Gate-to-Source Voltage (V)

8 ID = 11.7 A 1.4 ID = 11.7 A

r DS(on) − On-Resistance (W)

1.3
(Normalized)

6 1.2

1.1

4 1.0

0.9

2 0.8

0.7

0 0.6
0 5 10 15 20 25 30 35 40 −50 −25 0 25 50 75 100 125 150

Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

0.08
50
0.07
r DS(on) − On-Resistance ( W )

TJ = 150_C 0.06
I S − Source Current (A)

0.05
10
ID = 11.7 A
0.04

0.03

TJ = 25_C 0.02

0.01

0.00
1
0 2 4 6 8 10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

Document Number: 72582 www.vishay.com

S-32518—Rev. A, 08-Dec-03 3
Si7423DN
Vishay Siliconix New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Threshold Voltage Single Pulse Power, Juncion-To-Ambient
0.6 50
0.5
ID = 250 mA
0.4 40

0.3
V GS(th) Variance (V)

Power (W)
0.2 30

0.1

−0.0 20

−0.1

−0.2 10

−0.3

−0.4 0
−50 −25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ − Temperature (_C) Time (sec)

Safe Operating Area

100
rDS(on) Limited IDM Limited

10
I D − Drain Current (A)

P(t) = 0.001

ID(on) P(t) = 0.01

1 Limited
P(t) = 0.1

P(t) = 1
TA = 25_C P(t) = 10
0.1 Single Pulse
dc

BVDSS Limited
0.01
0.1 1 10 100
VDS − Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 65_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4 10−3 10−2 10−1 1 10 100 600
Square Wave Pulse Duration (sec)

www.vishay.com Document Number: 72582

4 S-32518—Rev. A, 08-Dec-03
 Si7423DN
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Case

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1

0.1 Single Pulse

0.05
0.02

0.01
10−4 10−3 10−2 10−1 1
Square Wave Pulse Duration (sec)

Document Number: 72582 www.vishay.com

S-32518—Rev. A, 08-Dec-03 5
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