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1N5817 Schotkey Diode Datasheet - 0 PDF
1N5817 Schotkey Diode Datasheet - 0 PDF
C 11/04
1N5817
SCHOTTKY RECTIFIER 1.0 Amp
Characteristics Values Units The 1N5817 axial leaded Schottky rectifier has been optimized
for very low forward voltage drop, with moderate leakage.
IF(AV) Rectangular 1.0 A Typical applications are in switching power supplies, convert-
ers, free-wheeling diodes, and reverse battery protection.
waveform
Low profile, axial leaded outline
VRRM 20 V
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
IFSM @ tp = 5 µs sine 240 A
Very low forward voltage drop
High frequency operation
VF @ 1 Apk, T J = 25°C 0.45 V
Guard ring for enhanced ruggedness and long term
reliability
TJ range - 65 to 150 °C Lead-Free plating
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1N5817
Bulletin PD-20646 rev. C 11/04
Voltage Ratings
Part number 1N5817
VR Max. DC Reverse Voltage (V)
20
VRWM Max. Working Peak Reverse Voltage (V)
Electrical Specifications
Parameters Typ. Max. Units Conditions
VFM Max. Forward Voltage Drop (1) 0.42 0.45 V @ 1A
TJ = 25 °C
0.50 0.75 V @ 3A
IRM Max. Reverse Leakage Current (1) 0.012 1.0 mA TJ = 25 °C
VR = rated VR
2.0 10 mA TJ = 100 °C
CT Typical Junction Capacitance 110 - pF VR = 5VDC (test signal range 100kHz to
1Mhz), @ 25°C
LS Typical Series Inductance 8.0 - nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change - 10000 V/ µs (Rated VR)
(1) Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters 1N5817 Units Conditions
TJ Max. Junction Temperature Range (2) - 65 to 150 °C
Tstg Max. Storage Temperature Range - 65 to 150 °C
RthJL Max. Thermal Resistance Junction 32 °C/W DC operation, Lead lenght = 1/8 inch.
to Lead
RthJA Max. Thermal Resistance Junction 100 °C/W DC operation, without cooling fin
to Ambient
Wt Approximate Weight 0.33(0.012) gr (oz)
Case Style DO-204AL (DO-41)
(2) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
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1N5817
Bulletin PD-20646 rev. C 11/04
100
100 10 Tj = 150˚C
0.001
Instantaneous Forward Current - I F (A)
10
0.0001
0 5 10 15 20
Reverse Voltage - VR (V)
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
1 1000
Tj = 25˚C
Junction Capacitance - C T (pF)
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
100
0.1
0 0.2 0.4 0.6 0.8 1
Forward Voltage Drop - V FM (V)
10
Fig. 1 - Typical Forward Voltage Drop Characteristics 0 5 10 15 20
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
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1N5817
Bulletin PD-20646 rev. C 11/04
150 0.5
D = 0.20
Allowable Lead Temperature (°C)
D = 0.25
130 0
0 0.4 0.8 1.2 1.6 0 0.4 0.8 1.2 1.6
Average Forward Current - I F(AV) (A) Average Forward Current - I F(AV) (A)
Fig. 4 - Maximum Average Forward Current Fig. 5 - Maximum Average Forward Dissipation
Vs. Allowable Lead Temperature Vs. Average Forward Current
1000
Non-Repetitive Surge Current - I FSM (A)
100
Tj = 25˚C
10
10 100 1000 10000
Square Wave Pulse Duration - t p (microsec)
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1N5817
Bulletin PD-20646 rev. C 11/04
Device Code
1N5817 TR
1 2
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Visit us at www.irf.com for sales contact information. 11/04
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