2SK3683-01MR 200309

FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET

Super FAP-G Series
Outline Drawings [mm]
Features TO-220F
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof

Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)

Maximum ratings and characteristicAbsolute maximum ratings

(Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit Remarks
Drain-source voltage V DS 500 V
VDSX 500 V VGS=-30V
Continuous drain current ID ±19 A
Pulsed drain current ID(puls] ±76 A
Gate-source voltage VGS ±30 V
Non-Repetitive IAS 19 A Tch<
=150°C
Maximum avalanche current Equivalent circuit schematic
Non-Repetitive EAS 245.3 mJ L=1.25mH
Maximum avalanche energy VCC =50V *2 Drain(D)
Maximum Drain-Source dV/dt dV DS/dt 20 kV/s VDS< =500V
Peak diode recovery dV/dt dV/dt 5 kV/µs *3
Max. power dissipation PD 2.16 W Ta=25°C
97 Tc=25°C
Gate(G)
Operating and storage Tch +150 °C
temperature range Tstg -55 to +150 Source(S)
°C
Isolation voltage VISO 2 kVrms t=60sec,f=60Hz
*2 See to Avalanche Energy Graph
*3 IF < = BVDSS, Tch <
= -ID, -di/dt=50A/µs, VCC < = 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Symbol Test Conditions Min. Typ. Max. Units
Drain-source breakdown voltaget V(BR)DSS ID= 250µA VGS=0V 500 V
Gate threshold voltage VGS(th) ID= 250µA VDS=VGS 3.0 5.0 V
VDS=500V VGS=0V Tch=25°C 25 µA
Zero gate voltage drain current IDSS
VDS=400V VGS=0V Tch=125°C 250
Gate-source leakage current IGSS VGS=±30V VDS=0V 10 100 nA
Drain-source on-state resistance RDS(on) ID=9.5A VGS=10V 0.29 0.38 Ω
Forward transcondutance gfs ID=9.5A VDS=25V 7.5 15 S
Input capacitance Ciss VDS =25V 1560 2340 pF
Output capacitance Coss VGS=0V 230 345
Reverse transfer capacitance Crss f=1MHz 8 12
Turn-on time ton td(on) VCC=300V ID=9.5A 29 43.5 ns
tr VGS=10V 13 19.5
Turn-off time toff td(off) RGS=10 Ω 56 84
tf 8 12
Total Gate Charge QG V CC =250V 34 51 nC
Gate-Source Charge QGS ID=19A 13 19.5
Gate-Drain Charge QGD VGS=10V 10 15
Avalanche capability IAV L=1.25mH Tch=25°C 19 A
Diode forward on-voltage V SD IF=19A VGS=0V Tch=25°C 1.20 1.50 V
Reverse recovery time t rr IF=19A VGS=0V 0.57 µs
Reverse recovery charge Qrr -di/dt=100A/µs Tch=25°C 7.0 µC
Thermalcharacteristics
Item Symbol Test Conditions Min. Typ. Max. Units
Rth(ch-c) channel to case 1.289 °C/W
Thermal resistance
Rth(ch-a) channel to ambient 58.0 °C/W
1
2SK3683-01MR FUJI POWER MOSFET
Characteristics

Allowable Power Dissipation Typical Output Characteristics

PD=f(Tc) ID=f(VDS):80 µs pulse test,Tch=25 ° C
120 50

100
40
20V
10V
80 8V
30

ID [A]
PD [W]

60
7V
20

40
6.5V
10
20
VGS=6.0V

0 0
0 25 50 75 100 125 150 0 4 8 12 16 20 24
VDS [V]
Tc [°C]

Typical Transfer Characteristic Typical Transconductance

ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100 100

10
10
ID[A]

gfs [S]

1
1

0.1

0.1
0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 100
VGS[V] ID [A]

Typical Drain-Source on-state Resistance Drain-Source On-state Resistance

RDS(on)=f(ID):80 µs pulse test,Tch=25 °C RDS(on)=f(Tch):ID=9.5A,VGS=10V
1.0 1.0
VGS=6V 6.5V
0.9 0.9
7V
0.8 0.8

0.7 0.7
RDS(on) [ Ω ]

0.6 0.6
RDS(on) [ Ω ]

8V
10V
0.5 0.5
20V max.
0.4 0.4
typ.
0.3 0.3

0.2 0.2

0.1 0.1

0.0 0.0
0 10 20 30 40 -50 -25 0 25 50 75 100 125 150
ID [A] Tch [°C]

2
2SK3683-01MR FUJI POWER MOSFET

Typical Gate Charge Characteristics

Gate Threshold Voltage vs. Tch
VGS=f(Qg):ID=19A,Tch=25 °C
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0 14

6.5

6.0 12

5.5 Vcc= 100V

5.0 max. 10 250V

4.5 400V
VGS(th) [V]

4.0 8

VGS [V]
3.5

3.0 min. 6

2.5

2.0 4

1.5

1.0 2
0.5

0.0 0
-50 -25 0 25 50 75 100 125 150 0 10 20 30 40 50 60
Tch [°C]
Qg [nC]

Typical Capacitance Typical Forward Characteristics of Reverse Diode

C=f(VDS):VGS=0V,f=1MHz IF=f(VSD):80 µs pulse test,Tch=25 °C
4
10 100

Ciss
3
10

10
C [pF]

IF [A]

2
10
Coss

1
1
10
Crss

0
10 0.1
0 1 2 3
10 10 10 10 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
VDS [V]
VSD [V]

Maximum Avalanche Energy vs. starting Tch

Typical Switching Characteristics vs. ID
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=19A
t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω
10
3 700

600 IAS=8A

500
2
10
td(off)
IAS=12A
400
EAV [mJ]

td(on)
t [ns]

300
IAS=19A
1
10
tf 200
tr

100

0
10 0
-1 0 1 2
10 10 10 10 0 25 50 75 100 125 150

ID [A] starting Tch [°C]

3
2SK3683-01MR FUJI POWER MOSFET

Maximum Avalanche Current Pulsewidth

2
IAV=f(tAV):starting Tch=25° C,Vcc=50V
10

Single Pulse
Avalanche Current I AV [A]

1
10

0
10

-1
10

-2
10
-8 -7 -6 -5 -4 -3 -2
10 10 10 10 10 10 10
tAV [sec]

Maximum Transient Thermal Impedance

Zth(ch-c)=f(t):D=0
1
10

0
10
Zth(ch-c) [°C/W]

-1
10

-2
10

-3
10
-6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 10

t [sec]

http://www.fujielectric.co.jp/denshi/scd/