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Abstract
In recent years, there are discussions about the address
transition decoder (ATD) circuit used with delay blocks
in CMOS technology. This is mainly used in Read only
Memory (ROM). And the power consumption and dissi-
pation are always challenges in VLSI designs. This paper
presents the ATD circuit using Conditional Data Mapping
Flip Flop (CDMFF) for generating the pulses in decoder.
This flip flop reduces the redundant events and reduces the
power consumption and dissipation by avoiding unnecessary
switching or triggering the decoder while the outputs are ex-
pected to remain constant. So transient analysis and slew
rate are also calculated for validating its application in low
power devices. The power dissipation for 32 bits is 137 nW
with a slew rate of 24.5 x 10-6 V/ms and 50 % duty cycle.
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International Journal of Pure and Applied Mathematics Special Issue
1 Introduction
In VLSI design, low power consumption and dissipation are main
concerned. And especially in memory devices low power buffer and
ROM play very significant role in reducing power. And address
transition decoder (ATD) circuit is the key component in reducing
the power dissipation by using delay blocks and dual edge pulse
generator [1]. In the previous work, the outputs of the dual edge
pulse generators are fed to the OR gate. Figure 1 shows the Dual
Edge Pulse Generator Circuit. It generates the pulses on both ris-
ing and falling edges of the input clock signal. The operations are
exactly same with the dual edge triggered flip flop. The flip flops are
triggered by the clock signal to process the data. But sometimes
the output remains the same for various combinations of inputs.
In such cases, there is unnecessary switching or triggering by the
clock signals. In this circuit also the pulse generator is generating
the pulses to trigger the decoder irrespective of the redundant word
sequences in the decoder output. It also increases the power con-
sumption and dissipation since the switching activities are active
in both the edges of the clock signal.
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The proposed circuit has larger size but the efficiency is im-
proved with reduced power dissipation. Whenever the words are
repeating while decoding in CMOS ROM, this circuit will not gen-
erate the pulses to decode it again. Thus it avoids the redundant
events or words and the triggering is done selectively. Hence it
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International Journal of Pure and Applied Mathematics Special Issue
dy 6.1309 × 10−6
Slew Rate = | |=| | (1)
dx 250.3864 × 10−6
Thus Slew rate = 24.5 × 10−6 V/ms. Proper Slew rate gives
the output faithfully in a VLSI circuit.
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duty cycle and Slew rate of 24.5 x 10-6 V/ms. Here the main
part of power dissipation is due to the switching activities that oc-
curred when the decoding is processed. But the redundant events
are avoided by using CDMFF and the power dissipation is reduced.
The Comparison Analysis and overview of the work of the work are
shown in the Table 2.
5 Conclusion
A novel CATD circuit has been proposed and designed using CDMFF
for the application of 32 bit low power ROM. It is observed that the
power is reduced by a huge amount during the decoding process in
CATD. The redundant events are avoided by the selectively gener-
ating the pulses and proper buffering also. The only disadvantage
will be increased in the size since it has higher number of transis-
tor. But all the transistors are not triggered at a time. They are
triggered selectively. Thus the power is reduced in this proposed
design.
References
[1] S. Kukrety, G. Singh, and V. Sulochana, A Low Power 32
Bit CMOS ROM Using a Novel ATD Circuit, International.
Journal of Electrical and. Computer Engineering, vol. 3, no. 4,
pp. 509-515, 2013.
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International Journal of Pure and Applied Mathematics Special Issue
[9] Wei Cui, Siliang Wu. Design of Small Area and Low Power
Consumption Mask ROM, Integrated Circuit Design and Tech-
nology, 2007. ICICDT ’07, IEEE International Conference on.
vol., no. pp.1,4, May 30 2007-June 1 2007
[11] BD Yang and LS Kim. ,A low power ROM using charge recy-
cling and charge-sharing techniques. IEEE J. Solid-State Cir-
cuits, vol. 38, no. 4, pp. 641-653, Apr. 2003.
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