CM200DY-12H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™
H-Series Module
200 Amperes/600 Volts

B
H E E H

E2 G2
C2E1 E2 C1

C K G

G1 E1
S
L

R - M5 THD (3 TYP.)
Description:
P - DIA. (2 TYP.)
Powerex IGBTMOD™ Modules
are designed for use in switching
.110 TAB
J
N
J
N
J applications. Each module consists
of two IGBT Transistors in a
M
half-bridge configuration with each
transistor having a reverse-
D connected super-fast recovery
F
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
Q
offering simplified system assembly
and thermal management.
G2 Features:
E2 □ Low Drive Power
□ Low VCE(sat)
□ Discrete Super-Fast Recovery
C2E1 E2 C1 (70ns) Free-Wheel Diode
□ High Frequency Operation
E1 (20-25kHz)
G1
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
Outline Drawing and Circuit Diagram
□ AC Motor Control
Dimensions Inches Millimeters Dimensions Inches Millimeters
□ Motion/Servo Control
□ UPS
A 3.70 94.0 K 0.51 13.0
□ Welding Power Supplies
B 3.150±0.01 80.0±0.25 L 0.47 12.0
□ Laser Power Supplies
C 1.89 48.0 M 0.30 7.5
Ordering Information:
D 1.18 Max. 30.0 Max. N 0.28 7.0
Example: Select the complete part
E 0.90 23.0 P 0.256 Dia. Dia. 6.5 module number you desire from
F 0.83 21.2 Q 0.26 6.5 the table below -i.e. CM200DY-12H
G 0.71 18.0 R M5 Metric M5 is a 600V (VCES), 200 Ampere
Dual IGBTMOD™ Power Module.
H 0.67 17.0 S 0.16 4.0
J 0.63 16.0 Type Current Rating VCES
Amperes Volts (x 50)
CM 200 12

241
This datasheet has been downloaded from http://www.digchip.com at this page
 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM200DY-12H
Dual IGBTMOD™ H-Series Module
200 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM200DY-12H Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts
Gate-Emitter Voltage VGES ±20 Volts
Collector Current IC 200 Amperes
Peak Collector Current ICM 400* Amperes
Diode Forward Current IF 200 Amperes
Diode Forward Surge Current IFM 400* Amperes
Power Dissipation Pd 780 Watts
Max. Mounting Torque M5 Terminal Screws – 17 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Module Weight (Typical) – 270 Grams
V Isolation VRMS 2500 Volts
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V – 2.1 2.8** Volts
IC = 200A, VGE = 15V, Tj = 150°C – 2.15 – Volts
Total Gate Charge QG VCC = 300V, IC = 200A, VGS = 15V – 600 – nC
Diode Forward Voltage VFM IE = 200A, VGS = 0V – – 2.8 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 20 nF
Output Capacitance Coes VGE = 0V, VCE = 10V, f = MHz – – 7 nF
Reverse Transfer Capacitance Cres – – 4 nF
Resistive Turn-on Delay Time td(on) – – 200 ns
Load Rise Time tr VCC = 300V, IC = 200A, – – 550 ns
Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 3.1Ω – – 300 ns
Times Fall Time tf – – 300 ns
Diode Reverse Recovery Time trr IE = 200A, diE/dt = –400A/µs – – 110 ns
Diode Reverse Recovery Charge Qrr IE = 200A, diE/dt = –400A/µs – 0.54 – µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.16 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.35 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.065 °C/W

242
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM200DY-12H
Dual IGBTMOD™ H-Series Module
200 Amperes/600 Volts

COLLECTOR-EMITTER
OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL) (TYPICAL)

400 400 5
Tj = 25oC VGE = 20V 12 VCE = 10V VGE = 15V

SATURATION VOLTAGE, VCE(sat), (VOLTS)

COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)

15 Tj = 25°C Tj = 25°C
Tj = 125°C 4 Tj = 125°C
300 300

COLLECTOR-EMITTER
11
3
200 200
10 2

100 9
100
1
7
8

0 0 0
0 2 4 6 8 10 0 4 8 12 16 20 0 100 200 300 400
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER FREE-WHEEL DIODE

SATURATION VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS CAPACITANCE VS. VCE
(TYPICAL) (TYPICAL) (TYPICAL)
10 103 102
Tj = 25°C Tj = 25°C
SATURATION VOLTAGE, VCE(sat), (VOLTS)

CAPACITANCE, Cies, Coes, Cres, (nF)

EMITTER CURRENT, IE, (AMPERES)

8
IC = 400A Cies
COLLECTOR-EMITTER

101
6
IC = 200A
102 Coes

4
100

2
VGE = 0V
IC = 80A
f = 1MHz Cres
0 101 10-1
0 4 8 12 16 20 0 0.8 1.6 2.4 3.2 4.0 10-1 100 101 102
GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

HALF-BRIDGE
SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS
(TYPICAL) (TYPICAL) GATE CHARGE, VGE
103 103 102 20
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)

td(off)
REVERSE RECOVERY TIME, t rr, (ns)

16
tf VCC = 200V
SWITCHING TIME, (ns)

td(on)
12
Irr VCC = 300V
102 102 101
t rr
8
VCC = 300V
tr VGE = ±15V
RG = 3.1Ω 4
di/dt = -400A/µsec
Tj = 125°C Tj = 25°C
101 101 100 0
101 102 103 101 102 103 0 200 400 600 800 1000
COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) GATE CHARGE, QG, (nC)

243
 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM200DY-12H
Dual IGBTMOD™ H-Series Module
200 Amperes/600 Volts

TRANSIENT THERMAL TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(IGBT) (FWDi)
10-3 10-2 10-1 100 101 10-3 10-2 10-1 100 101

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

101 101
Single Pulse Single Pulse
TC = 25°C TC = 25°C
Per Unit Base = R th(j-c) = 0.16°C/W Per Unit Base = R th(j-c) = 0.35°C/W

Zth = Rth • (NORMALIZED VALUE)

Zth = Rth • (NORMALIZED VALUE)

100 100

10-1 10-1 10-1 10-1

10-2 10-2 10-2 10-2

10-3 10-3 10-3 10-3

10-5 10-4 10-3 10-5 10-4 10-3
TIME, (s) TIME, (s)

244