MITSUBISHI IGBT MODULES

CM200DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE

F F G

G2
C2E1 E2 C1

E2
C D J

E1
G1
P

Description:
K
R
Mitsubishi IGBT Modules are de-
Q - M6 THD
N - DIA. signed for use in switching applica-
(3 TYP.)
(4 TYP.) tions. Each module consists of two
M
TAB#110 t=0.5 IGBTs in a half-bridge configuration
M
L with each transistor having a re-
verse-connected super-fast recov-
ery free-wheel diode. All compo-
E H
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system as-
sembly and thermal management.
M
Features:
u Low Drive Power
G2 u Low VCE(sat)
E2
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
C2E1 E2 C1 u Isolated Baseplate for Easy
Heat Sinking
E1
Applications:
G1 u AC Motor Control
u Motion/Servo Control
Outline Drawing and Circuit Diagram
u UPS
Dimensions Inches Millimeters Dimensions Inches Millimeters u Welding Power Supplies
A 4.25 108.0 J 0.59 15.0 Ordering Information:
B 3.66±0.01 93.0±0.25 K 0.55 14.0 Example: Select the complete part
C 2.44 62.0 L 0.30 8.5 module number you desire from
the table below -i.e. CM200DY-24H
D 1.89±0.01 48.0±0.25 M 0.28 7.0
is a 1200V (VCES), 200 Ampere
E 1.22 Max. 31.0 Max. N 0.256 Dia. Dia. 6.5 Dual IGBT Module.
F 0.98 25.0 P 0.24 6.0
Type Current Rating VCES
G 0.85 21.5 Q M6 Metric M6 Amperes Volts (x 50)
H 0.60 15.2 R 0.20 5.0 CM 200 24

Sep.1998
 MITSUBISHI IGBT MODULES

CM200DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM200DY-24H Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (TC = 25°C) IC 200 Amperes
Peak Collector Current ICM 400* Amperes
Emitter Current** (TC = 25°C) IE 200 Amperes
Peak Emitter Current** IEM 400* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Pc 1500 Watts
Mounting Torque, M6 Main Terminal – 1.96 ~ 2.94 N·m
Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N·m
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V – 2.5 3.4** Volts
IC = 200A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge QG VCC = 600V, IC = 200A, VGE = 15V – 1000 – nC
Emitter-Collector Voltage VEC IE = 200A, VGE = 0V – – 3.5 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 40 nF
Output Capacitance Coes VGE = 0V, VCE = 10V – – 14 nF
Reverse Transfer Capacitance Cres – – 8 nF
Resistive Turn-on Delay Time td(on) – – 250 ns
Load Rise Time tr VCC = 600V, IC = 200A, – – 400 ns
Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 1.6Ω – – 300 ns
Times Fall Time tf – – 350 ns
Diode Reverse Recovery Time trr IE = 200A, diE/dt = –400A/µs – – 250 ns
Diode Reverse Recovery Charge Qrr IE = 200A, diE/dt = –400A/µs – 1.49 – µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.085 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.18 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.045 °C/W

Sep.1998
 MITSUBISHI IGBT MODULES

CM200DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE

COLLECTOR-EMITTER
OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL) (TYPICAL)
400 400 5
15 12
Tj = 25oC VCE = 10V VGE = 15V
COLLECTOR CURRENT, IC, (AMPERES)

SATURATION VOLTAGE, VCE(sat), (VOLTS)

Tj = 25°C
COLLECTOR CURRENT, IC, (AMPERES)

Tj = 25°C
320 VGE = 20V 320 Tj = 125°C 4 Tj = 125°C
11

COLLECTOR-EMITTER
240 240 3

10
160 160 2

9
80 80 1
7
8

0 0 0
0 2 4 6 8 10 0 4 8 12 16 20 0 80 160 240 320 400
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER FREE-WHEEL DIODE

SATURATION VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS CAPACITANCE VS. VCE
(TYPICAL) (TYPICAL) (TYPICAL)

10 103 102
7 Tj = 25°C
Tj = 25°C
SATURATION VOLTAGE, VCE(sat), (VOLTS)

5 CAPACITANCE, Cies, Coes, Cres, (nF) Cies

EMITTER CURRENT, IE, (AMPERES)

8
IC = 400A 3
COLLECTOR-EMITTER

2 101
6 Coes
IC = 200A
102
7
4
5
100
Cres
3
2
IC = 80A 2 VGE = 0V

0 101 10-1
1.0 1.5 2.0 2.5 3.0 3.5 10-1 100 101 102
0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

HALF-BRIDGE
SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS
(TYPICAL) (TYPICAL) GATE CHARGE, VGE
103 103 102 20
REVERSE RECOVERY CURRENT, Irr, (AMPERES)

IC = 200A
GATE-EMITTER VOLTAGE, VGE, (VOLTS)

tf
REVERSE RECOVERY TIME, t rr, (ns)

td(off)
16
VCC = 400V
SWITCHING TIME, (ns)

Irr VCC = 600V

td(on) 12
t rr
102 102 101

8
VCC = 600V
VGE = ±15V
RG = 1.6Ω 4
di/dt = -400A/µsec
tr Tj = 125°C Tj = 25°C

101 101 100 0

101 102 103 101 102 103 0 400 800 1200 1600
COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) GATE CHARGE, QG, (nC)

Sep.1998
 MITSUBISHI IGBT MODULES

CM200DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE

TRANSIENT THERMAL TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(IGBT) (FWDi)
10-3 10-2 10-1 100 101 10-3 10-2 10-1 100 101
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

101 101
Single Pulse Single Pulse
TC = 25°C TC = 25°C
Per Unit Base = R th(j-c) = 0.085°C/W
Zth = Rth • (NORMALIZED VALUE)

Zth = Rth • (NORMALIZED VALUE) Per Unit Base = R th(j-c) = 0.18°C/W

100 100

10-1 10-1 10-1 10-1

10-2 10-2 10-2 10-2

10-3 10-3 10-3 10-3

10-5 10-4 10-3 10-5 10-4 10-3
TIME, (s) TIME, (s)

Sep.1998
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