TPC8018-H

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)

TPC8018-H
High-Speed and High-Efficiency DC/DC Converter
Applications Unit: mm

Notebook PC Applications
Portable-Equipment Applications

• Small footprint due to a small and thin package

• High-speed switching
• Small gate charge: QSW = 12 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 3.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| =50 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

JEDEC ―
Drain-source voltage VDSS 30 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V JEITA ―

Gate-source voltage VGSS ±20 V TOSHIBA 2-6J1B

DC (Note 1) ID 18 Weight: 0.085 g (typ.)
Drain current A
Pulsed (Note 1) IDP 72
Drain power dissipation (t = 10 s)
PD 1.9 W
(Note 2a) Circuit Configuration
Drain power dissipation (t = 10 s)
PD 1.0 W
(Note 2b)
8 7 6 5
Single-pulse avalanche energy
EAS 210 mJ
(Note 3)
Avalanche current IAR 18 A
Repetitive avalanche energy
EAR 0.19 mJ
(Note 2a) (Note 4)
Channel temperature Tch 150 °C
1 2 3 4
Storage temperature range Tstg −55 to 150 °C

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

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Thermal Characteristics

Characteristic Symbol Max Unit

Thermal resistance, channel to ambient

Rth (ch-a) 65.8 °C/W
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
Rth (ch-a) 125 °C/W
(t = 10 s) (Note 2b)

Marking (Note 5)

TPC8018 Part No. (or abbreviation code)

H Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

Note 1: The channel temperature should not exceed 150°C during use.

Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4 FR-4
25.4 × 25.4 × 0.8 25.4 × 25.4 × 0.8
(Unit: mm) (Unit: mm)

(a) (b)

Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 18 A

Note 4: Repetitive rating: pulse width limited by max channel temperature

Note 5: • on the lower left of the marking indicates Pin 1.

* Weekly code: (Three digits)

Week of manufacture
(01 for first week of year, continuing up to 52 or 53)

Year of manufacture
(The last digit of the calendar year)

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Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA

Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA
V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯
Drain-source breakdown voltage V
V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 V
VGS = 4.5 V, ID = 9 A ⎯ 4.8 6.2
Drain-source ON-resistance RDS (ON) mΩ
VGS = 10 V, ID = 9 A ⎯ 3.5 4.6
Forward transfer admittance |Yfs| VDS = 10 V, ID = 9 A 25 50 ⎯ S
Input capacitance Ciss ⎯ 2265 ⎯
Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 255 ⎯ pF

Output capacitance Coss ⎯ 1045 ⎯

Rise time tr ⎯ 5 ⎯
ID = 9 A
VGS 10 V VOUT
Turn-on time ton 0V ⎯ 14 ⎯

RL = 1.67Ω
Switching time ns

4.7 Ω
Fall time tf ⎯ 11 ⎯

VDD ∼
− 15 V
Turn-off time toff ⎯ 50 ⎯
Duty <
= 1%, tw = 10 µs

Total gate charge VDD ∼

− 24 V, VGS = 10 V, ID = 18 A ⎯ 38 ⎯
Qg
(gate-source plus gate-drain) VDD ∼
− 24 V, VGS = 5 V, ID = 18 A ⎯ 21 ⎯
Gate-source charge 1 Qgs1 ⎯ 7.3 ⎯ nC

Gate-drain (“Miller”) charge Qgd VDD ∼

− 24 V, VGS = 10 V, ID = 18 A ⎯ 9 ⎯
Gate switch charge QSW ⎯ 12 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 72 A

Forward voltage (diode) VDSF IDR = 18 A, VGS = 0 V ⎯ ⎯ −1.2 V

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ID – VDS ID – VDS
20 50
10 4 3.3 Common source 10 3.6 Common source
Ta = 25°C Pulse test 3.5 Ta = 25°C Pulse test
8 6 3.8
3.5
6 3.2 4
5
16 40
4.5

Drain current ID (A)

4.5
Drain current ID (A)

3.4
3.1 3.3

12 30

3.2

8 3 20 3.1

2.9 3
4 10

VGS = 2.8V
VGS = 2.8V
0 0
0 0.2 0.4 0.6 0.8 1 0 0.4 0.8 1.2 1.6 2

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID – VGS VDS – VGS

50 0.2
Common source Common source
VDS = 10 V Ta = 25°C
Drain-source voltage VDS (V)

Pulse test Pulse test

40 0.16
Drain current ID (A)

30 0.12

ID = 18 A
20 0.08

Ta = −55°C
100 9
10 0.04

25
4.5
0 0
0 1 2 3 4 5 6 0 2 4 6 8 10

Gate-source voltage VGS (V) Gate-source voltage VGS (V)

⎪Yfs⎪ – ID RDS (ON) – ID

1000 100
(S)

Common source
Ta = 25°C
Forward transfer admittance |Yfs|

Pulse test
Drain-source ON-resistance

100 Ta = −55°C
RDS (ON) (mΩ)

25
100
10 10

4.5

1
VGS = 10 V
Common source
VDS = 10 V
Pulse test
0.1 1
0.1 1 10 100 0.1 1 10 100

Drain current ID (A) Drain current ID (A)

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RDS (ON) – Ta IDR – VDS

10 1000
Common source Common source
Ta = 25°C

(A)
Pulse test
Drain-source ON-resistance

8 Pulse test
100

Drain reverse current IDR

ID = 18A
RDS (ON) (mΩ)

10
6
ID = 4.5A,9A 3
VGS = 4.5 V
10 4.5

ID = 4.5A,9A,18A
1
2 VGS = 10 V
1
VGS = 0 V

0 0.1
−80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1.0

Ambient temperature Ta (°C) Drain-source voltage VDS (V)

Capacitance – VDS Vth – Ta

10000 2.5
Gate threshold voltage Vth (V))

Ciss
2
(pF)

1000
Capacitance C

1.5
Coss

1
Crss
100 Common source
Common source
VDS = 10 V
VGS = 0 V 0.5
ID = 1 mA
f = 1 MHz
Pulse test
Ta = 25°C
10 0
0.1 1 10 100 −80 −40 0 40 80 120 160

Drain-source voltage VDS (V) Ambient temperature Ta (°C)

Dynamic input/output
PD – Ta characteristics
2 50 20
(1)Device mounted on a
Common source
(1) glass-epoxy board(a) (Note 2a)
Drain-source voltage VDS (V)

VGS (V)

(2)Device mounted on a ID = 18 A
Drain power dissipation PD (W)

1.6 glass-epoxy board(b) (Note 2b) 40 16

Ta = 25°C
ｔ＝10s
Pulse test

1.2 30 VDD = 6 V 12
Gate-source voltage

(2)
VDS

0.8 20 8
12
24

0.4 10 VGS 4

0 0 0
0 40 80 120 160 0 8 16 24 32 40

Ambient temperature Ta (°C) Total gate charge Qg (nC)

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rth – tw
1000

rth (°C/W)
(1) Device mounted on a glass-epoxy board (a)
(2)
(Note 2a)
(2) Device mounted on a glass-epoxy board (b)
100 (Note 2b)
Transient thermal impedance (1)

10

Single - pulse
0.1
0.001 0.01 0.1 1 10 100 1000

Pulse width tw (s)

Safe operating area

1000

100 ID max (Pulse) *

Drain current ID (A)

t=1ms *

10 10ms *

* Single - pulse
1 Ta=25℃
Curves must be derated
linearly with increase in
temperature. VDSS max
0.1
0.1 1 10 100

Drain-source voltage VDS (V)

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