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Fdocuments - in - Intel and Synopsys Research WRK PDF
Rick Merritt
4/21/2015 07:15 PM EDT
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SAN JOSE, Calif. — A semiconductor analyst is making a bold and detailed prediction about the
process technology Intel Corp. will use for its next two generations. If he is right, the world’s largest
chip maker is set to leapfrog the industry once again.
Intel will use quantum well FETs starting with its 10nm process, said David Kanter in an analysis
posted on his Real World Technologies Web site. The new transistor structures will use two new
materials – indium gallium arsenide (InGaAs) for n-type transistors and strained germanium for p-type
devices, he said.
If correct, Intel could gain a capability as early as 2016 to produce 10nm transistors as much as 200
millivolts lower in power consumption than the rest of the industry. Kanter expects other chip makers
will not be able to catch up with the techniques until their 7nm node, at least two years later.
It could take more than a year before Intel discloses its 10nm plans, Kanter said, giving his own
predictions an 80-90 percent confidence level.
Kanter’s analysis is based on a study of about two dozen Intel research papers mainly presented at the
annual International Electron Devices Meeting (IEDM), a leading gathering of chip makers. He also
analyzed as many Intel patents related to chip making.
“Everything I saw pointed in this direction,” Kanter told EE Times. “The question is not will Intel do
quantum well FETs, the question is will it be at 10 or 7nm,” he said.
“Using compound semiconductors in the channel is not unique to Intel’s research, but it’s clear no one
is quite so far along as Intel publishing on them,” Kanter added. “Intel’s papers and patents on
germanium were more scarce, but that technology is more well understood,” he said, noting he expects
Intel to adopt pure germanium although it may progress via a half step to silicon germanium.
Kanter provided Intel a look at his article before it was published. The chip make declined to comment
on it.
Intel showed work with InGaAs in this image from a 2009 IEDM paper.