Manuel S.

Enverga University Foundation, Lucena City College of Engineering

An Autonomous University

Bipolar Junction Transistor

ELAC 223/221L Electronics 1

Engr. ERWIN P. ELLAZAR, PECE

College of Engineering
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Learning Outcome
• Enhance ability to explain the principles and concepts
of Bipolar Junction Transistor

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Transistor Construction
There are two types of transistors:
• pnp
• npn
pnp

The terminals are labeled:

• E - Emitter
• B - Base
• C - Collector

npn

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Transistor Operation
With the external sources, VEE and VCC, connected as shown:

• The emitter-base junction is forward biased

• The base-collector junction is reverse biased

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Currents in a Transistor
Emitter current is the sum of the collector and
base currents:

I E = IC + I B

The collector current is comprised of two

currents:
IC = IC + ICO
majority minority

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Common-Base Configuration

The base is common to both input (emitter–base) and

output (collector–base) of the transistor.

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Common-Base Amplifier

Input Characteristics

This curve shows the relationship

between of input current (IE) to input
voltage (VBE) for three output voltage
(VCB) levels.

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Common-Base Amplifier

Output Characteristics
This graph demonstrates
the output current (IC) to
an output voltage (VCB) for
various levels of input
current (IE).

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Operating Regions
• Active – Operating range of the
amplifier.
• Cutoff – The amplifier is basically
off. There is voltage, but little
current.
• Saturation – The amplifier is full on.
There is current, but little voltage.

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Approximations
Emitter and collector currents:

I I
C E

Base-emitter voltage:

VBE = 0.7 V (for Silicon)

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Alpha ()
Alpha () is the ratio of IC to IE :
I
αdc = C
IE

Ideally:  = 1
In reality:  is between 0.9 and 0.998

Alpha () in the AC mode:

∆I
αac = C
∆I E

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Transistor Amplification

Currents and Voltages: Voltage Gain:

V 200mV V 50V
I E = Ii = i = = 10mA Av = L = = 250
Ri 20Ω Vi 200mV
I I
C E
I  I = 10 mA
L i
V = I R = (10 ma)(5 kΩ) = 50 V
L L

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Common–Emitter Configuration

The emitter is common to both input

(base-emitter) and output (collector-
emitter).

The input is on the base and the

output is on the collector.

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Common-Emitter Characteristics

Collector Characteristics Base Characteristics

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Beta (  )
 represents the amplification factor of a transistor. ( is
sometimes referred to as hfe, a term used in transistor modeling
calculations)

In DC mode:
IC
β dc =
IB

In AC mode:
IC
 ac = VCE =constant
IB

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Beta (  )
Determining  from a Graph

(3.2mA − 2.2mA)
βAC =
(30µA− 20µA)
1 mA
= V =7.5
10µA CE
= 100

2.7 mA
β DC = V CE = 7.5
25 A
= 108

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Beta (  )
Relationship between amplification factors  and 

β α
α= β=
β +1 α −1

Relationship Between Currents

IC = βIB I E = (β + 1)IB

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Common–collector Configuration

The input is on the

base and the output is
on the emitter.

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Common–collector Configuration

The characteristics are

similar to those of the
common-emitter
configuration, except the
vertical axis is IE.

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Operating Limits for Each Configuration

VCE is at maximum and IC is at
minimum (ICmax= ICEO) in the cutoff
region.

IC is at maximum and VCE is at

minimum (VCE max = VCEsat = VCEO) in
the saturation region.

The transistor operates in the active

region between saturation and cutoff.

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Power Dissipation
Common-base:
PCmax = V CBIC

Common-emitter:

PCmax = VCEIC

Common-collector:

PCmax = VCE IE

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Transistor Specification Sheet

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Transistor Specification Sheet

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Transistor Testing
• Curve Tracer
Provides a graph of the characteristic curves.

• DMM
Some DMMs measure  DC orhFE.

• Ohmmeter

Bipolar Junction Transistor

ELAC 223/221L Electronics 1
 Manuel S. Enverga University Foundation, Lucena City College of Engineering
An Autonomous University

Transistor Terminal Identification

Bipolar Junction Transistor

ELAC 223/221L Electronics 1