EPC403: Power Electronics I

Electrical and Electronic Engineering

Ahram Canadian University

Dr. Sayed Ahmed Zaki

Assistant Prof. in Electrical Engineering
Faculty of Engineering
Cairo University
 Power Electronic Systems

What is Power Electronics ?

A field of Electrical Engineering that deals with the application of

power semiconductor devices for the control and conversion of
electric power

sensors
Input
Source Power Electronics Load
- AC Converters
- DC Output
- unregulated - AC
- DC
POWER ELECTRONIC
CONVERTERS – the
heart of power in a power
Reference Controller electronics system
 Power Electronic Systems

Why Power Electronics ?

Power semiconductor devices Power switches

isw

ON or OFF
+ vsw −
=0

isw = 0
Ploss = vsw isw = 0
+ vsw −
Losses ideally ZERO !
 Power Electronic Systems

Why Power Electronics ?

sensors
Input
Source Power Electronics IDEALLY LOSSLESS
Load !
- AC Converters
- DC Output
- unregulated - AC
- DC

Reference Controller
 Power Electronic Systems

Why Power Electronics ?

Power semiconductor devices Power switches

K K K
- - -
G G
Vak Vak Vak

+ + +
ia ia ia
A A A

Diode Thyristors Transistor

 Power Electronic Systems

Why Power Electronics ?

Passive elements High frequency

+ VL - transformer

iL
+ +
Inductor
V1 V2

+ VC - - -

iC
Capacitor
Power Electronic Switching Devices

1. Uncontrolled turn on and off (Power Diode)

2. Controlled turn on uncontrolled turn off (Thyristors)
3. Controlled turn on and off characteristic (Power Transistor, BJT,
MOSFET, GTO, IGBT)
4. Continuous gate signal requirement (BJT, MOSFET, IGBT)
5. Pulse gate requirement (SCR(Silicon-Controlled Rectifier), GTO)
6. Bidirectional current capability (TRIAC)
7. Undirectional current capability (SCR, GTO, BJT, MOSFET,
IGBT)
Diagram Block of Converters

(Rectifiers)

Regulators
Choppers
(TRIAC)

Inverters
 Types of Converters
AC to DC Converters.
• Diode Rectifiers: A diode rectifier circuit converts AC voltage into a fixed DC voltage.
The input voltage to rectifier could be either single phase or three phase.

• The thyristors: The DC output voltage can be controlled by varying the firing angle of.
The AC input voltage could be a single phase or three phase.
AC to AC Converters.
This converters can convert from a fixed ac input voltage into variable AC output voltage.
The output voltage is controlled by varying firing angle of TRIAC. These type converters
are known as AC voltage regulators.

DC to DC Converters .
These converters can convert a fixed DC input voltage into variable DC voltage or vice
versa. The DC output voltage is controlled by varying of duty cycle of the diode.

DC to AC Converters .
These converters can convert a fixed DC input voltage into variable AC called inverters
 1: The PN Junction Diode
• A popular semiconductor device called a diode is made by
joining p- and n-type semiconductor materials.
• The doped regions meet to form a p-n junction.
• Diodes are unidirectional devices that allow current to flow in
one direction.

•A diode is said to be forward biased when it is conducting

current (VD>VT), and it is said to be reversed biased when it is
not conducting significant current VD<VT.
 1.1. Unbiased Junction
• In absence of electric field across the junction, holes "diffuse"
towards and across boundary into n-type and capture electrons;
• electrons diffuse across boundary, fall into holes

("recombination of majority carriers');

• formation of a "depletion region" (= region without free charge

carriers) around the boundary.
• electric field across junction which prevents further diffusion.
 1.2. Forward Biased Junction
The term bias is defined as a control voltage or current
Forward-biasing a diode allows current to flow easily
through the diode

p-type charge carriers (positive holes) in p-side are pushed

towards and across the p-n boundary, n-type carriers
(negative electrons) in n-side are pushed towards and across
n-p boundary
therefore, current flows across p-n boundary
Forward Biased Junction (Cont.)

Depletion region and potential barrier reduced

 1.2. Reverse Biased Junction
• Applied voltage adds to the barrier field
• Holes and electrons are “pulled” toward the terminals,
increasing the size of the depletion zone.
• The depletion zone becomes, in effect, an insulator for
majority carriers.

Only a very small current can flow, due to a small number of

minority carriers randomly crossing the depletion region (=
reverse saturation current)
 Reverse Biased Junction (cont.)

• Depletion region becomes wider,

• Potential Barrier becomes higher
 The PN Junction Diode

Anode Lead

Diodes Have Polarity

(They must be
installed correctly.)

Cathode Lead
2. Volt-Ampere Characteristic Curve

Typically, breakdown is due to “avalanche” effects

Volt-Ampere Characteristic Curve
• It is a graph of diode current versus diode voltage
• The graph includes the diode current for both forward-
and reverse-bias voltages.
• Only a small current flows until breakdown is reached.
• If reverse biased is increased enough, the reverse current
increases dramatically.
• This breakdown is called junction breakdown
• The voltage required to reach this point is the reverse
breakdown voltage.
 3. Shockley Equation
The General characteristics of a semiconductor diode can be
defined by shockley equation:

ID - Current through diode.

Is - Reverse saturation current.
VD - Voltage across the diode.
k - 11600/ η , η = 1 for si and Ge at high diode
currents and η=2 for si at low diode currents).
TK - Temperature in Kelvin.
 Si vs. Ge Characteristics Curves

• In silicon, the potential VT is 0.6-0.7 V; in germanium, it is

0.2-0.3 V.
 Temperature Effects

The reverse saturation current Is will just about double in

magnitude for every 10oC increase in temperature
 4. Diode Circuit Models
• Three different approximations can be used
when analyzing diode circuits.
• The one used depends on the desired accuracy
of your circuit calculations.
• These approximations are referred to as
- The first approximation (Piecewise-Linear Model)
- The second approximation (Simplified Model)
- The third approximation (Ideal Model)
 4.1: Piecewise-Linear Model
(1st Approximation)

The first approximation of a diode includes the average

diode resistance, r.
av
 4.2. Simplified Model
(2nd Approximation)
The second approximation treats a forward-biased diode like an ideal
diode in series with a battery
 4.3: Ideal Model
(3rd Approximation)
The third approximation treats a forward-biased diode like a
closed switch with a voltage drop of zero volts.
Ideal vs. Simplified vs. Piecewise

Ideal

Simplified Piecewise
 5. Zener Diode
A Zener diode is a type of diode that permits current to flow in
the forward direction like a normal diode, but also in the
reverse direction if the voltage is larger than the breakdown
voltage known as "Zener knee voltage" or "Zener voltage".

A Zener diode exhibits almost the same properties of a normal

diode, except the device is specially designed so as to have a
greatly reduced breakdown voltage, ( Zener voltage).
This characteristic of the zener diode is very useful for voltage
regulation circuits.
 Zener Effect
By proper doping of the silicon, the “Zener Breakdown”
can be made to have a very “sharp breakdown”.
Zener break down: VD <= Vz:
VD = Vz, ID is determined by the circuit
 ZENER DIODE VOLTAGE-REGULATOR:
No Load

A voltage regulator circuit provides a nearly constant

voltage from a variable source.
 6. Light Emitting Diode (LED)
• LED is a semiconductor diode that emits light when
electrically biased in the forward direction of the p-n
junction, This effect is called electroluminescence.
• They are p—n junctions fabricated from special
semiconductors materials, like gallium arsenide
• They are made up of materials characterized by a wider gap
between the conduction band and the lower orbitals.
• When an electron meets a hole, it falls into a lower energy
level, and releases energy in the form of a photon (light).
• In silicon or germanium diodes, the electrons and holes
recombine by a non-radiative transition which produces no
optical emission
 Light Emitting Diodes
The color of the light depends on the chemical composition of
the semiconductor material used, and can be near ultraviolet,
visible or infrared. Anode Cathode

Inside a Light
Emitted visible
Emitting Diode
light

Emitted Light
Beams

Diode

Transparent
Plastic Case

Terminal Pins
Metal Metal
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