EE 401

Power Electronics-I
Text Book:
Power Electronics Circuits, Devices, and Applications
By
Muhammad Rashid
Edition: 3rd

Chapter No.01
Semester Fall 2019
 EE401 Power Electronics I (Revised)
Operating characteristics of power semiconductor devices such
as Bipolar Junction Transistors, IGBTs, MOSFETs and
Thyristors. The gate drives circuit characteristics, functional
requirements and implementation techniques. Understand the
operation and characteristics of single and three phase rectifiers
with resistive and inductive loads. This includes un-controlled,
semi controlled and fully controlled rectifiers. Switching
techniques, analysis and design for dc-dc conversion and types
of dc-dc converters. Switching techniques, analysis and design
for dc-ac conversion, and different types of modulation
techniques to eliminate harmonics.

Chapters:1 (1.1 to 1.11), 2 (2.8 to 2.13), 3 (3.1 to 3.5 & 3.7 to 3.12), 4 (4.2,
4.3 4.4, 4.6,4.7) 5 (5.1 to 5.12) , 6 (6.1 to 6.6, 6.10 to 6.12), 7(7.1 to 7.6),
10(10.1 to 10.11), 17 (17.1 to 17.9)
NOTE: Topics may be added or removed from the above mentioned list
Text Book: Power Electronics circuits, devices and applications (3rd Edition) - Rashid
Assignments & Lab Reports: The assignments will be submitted
as desired by the instructor. The labs will be conducted as
required for the course.

Pre- Requisite: Electrical Machines

Grading Policy:

Quizzes : 10 %
Assignments : 05 %
Labs Work : 20 %
Mid Term : 20 %
End Term : 45 %
CHAPTER 1
Introduction
Introduction To Power Electronics
Chapter 1

Power Electronics
Electronics
Digital Electronics
Micro Electronics
Nano Electronics
Power Electronics - Pre Requisite (Required) For Subjects

Mechatronics

Industrial Automation

Robotics

Electromechanical Systems

Micro Electro Mechanical Systems (MEMS)

Nano Electro Mechanical Systems (NEMS) : Nano Technology

Sensors and Transducers

 Power Electronics
DEFINITION:
To convert, i.e to process and control the flow of electric power by
supplying voltages and currents in a form that is optimally suited
for user loads.
 Power Electronics (PE) Systems

• To convert electrical energy from one form to another,

i.e. from the source to load with:

– highest efficiency

– highest availability

– highest reliability

– lowest cost

– smallest size

– least weight.
 PE Growth
PE Growth
• PE rapid growth due to:

– Advances in power (semiconductor) switches

– Advances in -electronics (DSP, microprocessor/microcontroller)
– New ideas in control algorithms
– Demand for new applications

• PE is an interdisciplinary field:

– Digital/analogue electronics
– Power and energy (Electromechanical Systems)
– Microelectronics ( MEMS, NEMS)
– Control system
– Computer, simulation and software
– Solid-state physics and devices
– Packaging
– Heat transfer
• Power Electronics Static applications

– involves non-rotating or moving mechanical components.

– Examples:

• DC Power supply, Un-interruptible power supply, Power

generation and transmission (HVDC), Electroplating, Welding,
Heating, Cooling, Electronic ballast

• Drive applications

– intimately contains moving or rotating components i.e.

motors/generators.

– Examples:
• Electric trains, Electric vehicles, Pumps, Air- conditioning
System, Compressor, Conveyer Belt (Factory automation).
 Sec 1.2,3 Page 5, 13 POWER ELECTRONIC SWITCHING DEVICES

1. Uncontrolled turn on and off (Power Diode)

2. Controlled turn on uncontrolled turn off (Thyristors)

3. Controlled turn on and off characteristic (Power Transistor, BJT,

MOSFET, GTO, IGBT)

4. Continuous gate signal requirement (BJT, MOSFET, IGBT)

5. Pulse gate requirement (SCR, GTO)

6. Bipolar voltage-withstanding capability (SCR, GTO)

7. Unipolar voltage-withstanding capability (BJT, MOSFET, IGBT)

8. Bidirectional current-handling capability (TRIAC)

9. Unidirectional current-handling capability (SCR, GTO, BJT, MOSFET, IGBT)

Figure 1.3 Page 6
Thyristor
Figure 3-15: Power Switches: Power Handlings
Switches comparisons
 Table of Characteristic and Symbol of Power Electronic Devices
Table 1.3 Page 12

SITH: Static Induction Thyristor

Table of Characteristic and Symbol of Power Electronic Devices

MCT: MOS controlled Thyristor

MTO: MOS Turn Off

ETO: Emitter Turn Off

 Table of Characteristic and Symbol of Power Electronic Devices

IGCT: Integrated gate-commutated Thyristor

Table of Characteristic and Symbol of Power Electronic Devices
Sec 1.3 Page

REMEEMBER: Power switch never operates in linear mode.

• Can be categorized into three groups:

1. Uncontrolled: Diode :

2. Semi-controlled: Thyristor (SCR). Easy ON, Difficult

TURN OFF

3. Fully controlled: (Easy ON, Easy Turn OFF)

• Traditional Fully Controlled devices :
- Bipolar junction transistors (BJT),
- Metal oxide silicon field effect transistor( MOSFET)
- Insulated gate bipolar transistors (IGBT),
- Gate turn-off thyristors (GTO)

• Emerging (new) devices: Gate controlled thyristor (GCT).

Figure 1.8 Page 13
Figure 1.9 Page 14 Control Characteristic of Power Electronic Devices
Figure 1.9 Page 14
Reading Assignment

Sec 1.4 CHARACTERISTICS AND SPECIFICATION OF

SWITCHES (page 16 to 20)

1.4.1 Ideal Characteristics

1.4.2 Characteristics of Practical Devices
1.4.3 Switch Specifications
1.4.4 Devices Choices
1.5 (Page 20) Types Power Electronic Circuits

Static converter: Power electronic converter that convert electric

power from one form to another.

The power electronic circuits fall generally into six categories:

-Diode Rectifiers

-AC to DC Converters (Controlled Rectifiers)

-DC to DC Converters (DC Choppers)

-AC to AC Converters (AC voltage regulators)

-DC to AC Converters (Inverters)

-Static Switches
Sec 1.5 (Page 20) TYPES OF POWER ELECTRONICS CIRCUITS
AC to DC: RECTIFIER (Diodes) Uncontrolled: RECTIFIERS
AC to DC: CONVERTERS (Thyristors) Controlled RECTIFIERS

DC to DC: Converter CHOPPER [Switching Mode Power Supply] (SMPS)

DC to AC: Converter INVERTER

AC to AC: Converter
Diode Rectifiers (un-controlled)
 Chapter 3 Chapter 10

Vdc Rectifier
Inverter
Mode
Mode

-Io Io Controlled Semi- Dual

Rectifier Inverter Controlled
Mode Mode
-V
Diode Rectifiers (un-controlled): Converts AC voltage into a
fixed DC voltage. The input voltage to rectifier could be either
single phase or three phase.

Figure 1.11
Single phase Center-tapped Transformer Rectifier

Single phase Bridge Rectifier

Car Generators (Alternators)
3-phase AC
3-phase bridge rectifiers
AC to DC Converters (controlled Rectifier):
AC to DC Converters (controlled Rectifier): The DC output
voltage can be controlled by varying the firing angle of the
thyristors. The AC input voltage could be a single or three phase.

Figure 1.12
1- phase Center-tapped Transformer
ac-dc converter

1-phase Bridge ac-dc converter

AC to AC Converters (Phase control):
AC to AC Converters (Phase control): Convert from a fixed ac
input voltage into variable AC output voltage. The output voltage is
controlled by varying firing angle of TRIAC. These type converters
are known as AC voltage regulator.
AC voltage regulators using TRIACS (Phase Control of 3-phase)

star load

delta load
 DC to DC Converters
(Switching mode power supply [SMPS])
Choppers
DC to DC Converters (Switching mode power supply [SMPS],
choppers) . Converter DC input voltage into variable DC voltage.
The DC output voltage is controlled by varying of duty cycle.
MOSFET
BJT
IGBT VDC

Iload
+
VDC Vload Rload t
Vload
VDC
VAV
ON Off

SCR t
Iload
T
+ RL
VDC D1 v1(t) Vload

Figure 3-40
Figure 1.11
• Switching Mode Power Supply (SMPS)
DC to AC Converters (Inverters)
DC to AC Converters (Inverters): Convert from a fixed dc input
voltage into variable frequency and voltage AC output voltage.

FULL BRIDGE (H-BRIDGE) INVERTER

Figure 1.15
 Uses
Wind Energy / Solar
Rectifiers / Inverters / Choppers

Pitch Controlled Wind Turbines

   
Objective type questions

Qs#1 Which is the Power semiconductor device having

a) Highest switching speed;

b) Highest voltage / current ratings;
c) Easy drive features;
d) Can be most effectively paralleled;
e) Can be protected against over-currents with a fuse;
f) Gate-turn off capability with regenerative features;
g) Easy drive and High power handling capability

Ans: a) MOSFET; b) SCR; c) MOSFET; d) MOSFET; e) SCR ; (f)

GTO; (g) IGBT
 Reading Assignment
Sec 1.6 to 1.11 (page 23 to 29)
END CHAPTER 1

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