East West University

Post Lab Report for EEE 202

Course No: EEE 202
Experiment No: 01
Name of the Experiment: Observation of BJT common-emitter (CE) characterstics.

Prepared by:
Student Name: Md: Abdul Gaffar
Student ID: 2015-3-80-003
Date of performance: 23.01.2017
Date of submission: 30.01.2017
Group No: 04
Group ID: 2015-3-80-006
2015-3-80-003
2015-2-80-01
2015-2-80-034
OBJECTIVE: By this experiment is to determine with the common – emitter output
characteristics of an npn bipolar transistor and to show that the characteristics graphically.

CIRCUIT DIAGRAM:

EXPERIMENTAL DATASHEET:

For IB=5uA

V1=1.2V

VBE=0.7V

V2(R2) =0.67V

VCE 0.1` 0.3 0.5 0.7 1 1.5 2 3 4 6

V2 1.88 3.03 3.27 3.44 3.76 4.30 4.78 5.82 6.82 8.92
VR1 1.79 2.73 2.73 2.74 2.75 2.77 2.79 2.81 2.84 2.89
Ic 0.96 1.46 1.46 1.47 1.48 1.49 1.50 1.51 1.53 1.55

For IB=15uA
V1=2.2v

VBE=0.7V

VR2=1.58V

VCE 0.1` 0.3 0.5 0.7 1 1.5 2 3 4 6

V2 4.01 7.09 7.39 7.53 7.88 8.42 8.98 10.04 11.06 13.28
VR1 4.08 6.78 6.79 6.82 6.86 6.90 6.94 7.0 7.08 7.22
Ic 2.19 3.64 3.65 3.66 3.68 3.70 3.73 3.76 3.80 3.88

ANSWER TO THE QUESTION NO: 01

ANSWER TO THE QUESTION NO:02

For IB =5uA,

IC = 1.48 when VCE = 1 V

 IC 1.48
So, β = = =296
I B 5 ×10−3

For IB =15uA,

IC = 3.68 when VCE = 1 V

IC 3.68
So, β = = =245 .33
I B 15× 10−3

ANSWER TO THE QUESTION NO: 03

Table for β value Difference:

β for IB = 5uA β for IB = 15uA β measured with DMM

296 245.33 547

ANSWER TO THE QUESTION NO: 04

For IB = 5µA,

IC1 = 1.35mA, IC2 = 1.39mA according to VCE1 =1V, VCE2 =3V

ro = (VCE2-VCE1)/(IC2- IC1)

= (3-1)/(1.39-1.35)

= 50kΩ

For IB = 15 µA,

IC1 = 2.14mA, IC2 = 2.18mA according to VCE1 =1V, VCE2 =3V

ro = (VCE2-VCE1)/(IC2- IC1)

= (3-1)/(2.18-2.14)

= 50kΩ

Answer to the question no 5:

Using step 4 data;

For IB = 5µA at VCE1 = 1V,

IC1 = 1.35mA

ro = 50kΩ
VA = (IC1× ro)- VCE1

= [(1.35×50)-1]V

=66.5V

For IB = 15µA at VCE1 = 1V,

IC1 = 2.14mA

ro = 50KΩ

VA = (IC1× ro)- VCE1

= [(2.14×50)-1]V

=106V

Answer to the question no 6:

A photocopy of lab data sheet which is attached behind this post lab report is submitted.

Answer to the question no 7:

For IB = 5µA, simulating the following circuit,

* Schematics Netlist *

R_R1 $N_0002 $N_0001 2.98k

R_R2 $N_0004 $N_0003 97.5k

V_V2 $N_0001 0 15V

Q_Q1 $N_0002 $N_0004 0 Q2N2222

V_V1 $N_0003 0 1.3V

**** BIPOLAR JUNCTION TRANSISTORS

NAME Q_Q1

MODEL Q2N2222

IB 6.71E-06

IC 1.14E-03

VBE 6.46E-01

VBC -1.10E+01

VCE 1.16E+01

BETADC 1.70E+02

GM 4.38E-02

RO 7.47E+04

BETAAC 1.87E+02
 4.0mA

3.0mA

2.0mA

1.0mA

0A

-1.0mA
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
Ic(Q1)
V(Q1:c)

Graph: IC vs VCE for IB=5 µA.

Again for IB = 15µA, simulating the following circuit,

* Schematics Netlist *

R_R1 $N_0002 $N_0001 2.98k

R_R2 $N_0004 $N_0003 97.5k

V_V2 $N_0001 0 15V

Q_Q1 $N_0002 $N_0004 0 Q2N2222

V_V1 $N_0003 0 2.2V

**** BIPOLAR JUNCTION TRANSISTORS

NAME Q_Q1

MODEL Q2N2222

IB 1.57E-05

IC 2.72E-03

VBE 6.70E-01

VBC -6.21E+00

VCE 6.88E+00

BETADC 1.74E+02

GM 1.04E-01

RO 2.95E+04

BETAAC 1.88E+02
4.0mA

3.0mA

2.0mA

1.0mA

0A

-1.0mA
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
Ic(Q1)
V(Q1:c)

Graph: IC vs VCE for IB=15 µA.

Conclusion:

From this experiment there is learned about the different characteristics of Ic-VCE and the works
of a BJT circuit and its npn configuration. There is learned about the base current (IB), collector
current(IC) and emitter current (IE) flows through the BJT. From the simulated graph this is
known that the IC – VCE always a linear curve . From the nonzero slop it ensures that the IC – VCE
straight lines indicates about output resistance, which is looking into the collector and is not
infinite. The output finite resistance is ro which can easily determine by knowing the value of
early voltage (VA) and collector current (IC).