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1.1 Microwave Spectrum and Bands: Table 1.1 The Electromagnetic Spectrum
1.1 Microwave Spectrum and Bands: Table 1.1 The Electromagnetic Spectrum
1 Introduction
This chapter is intended to provide basic principles of microwave engineering which is treated in
greater detail in the text.
* Corrara in 1932 first used the term ‘microwaves’ to designate electromagnetic waves of 30 cm wavelength, which is
also the term appeared for the first time in the proceedings of the IRE (Now it is IEEE).
2 BASIC MICROWAVE ENGINEERING
The Institute of Electrical and Electronics Engineers (IEEE) recommended microwave bands
designations as listed in Table 1.3.
0.003 to 0.030 HF
0.030 to 0.300 VHF
0.300 to 1.000 UHF
1.000 to 2.000 L band
2.000 to 4.000 S band
4.000 to 8.000 C band
8.000 to 12.000 X band
12.000 to 18.000 Ku band
18.000 to 26.000 K band
26.000 to 40.000 Ka band
40.000 to 300.000 Millimetre
>300.00 Submillimetre
The radar band classification, as listed in Table 1.4, came into use during World War II and is still
in use today even though the new military band designation, as listed in Table 1.5 has been adopted by
the U.S. Department of Defence since 1970.
INTRODUCTION 3
Table 1.5 U.S. New military microwave bands (New radar bands)
Frequency range in (GHz) Designation Frequency range in (GHz) Designation
However, varied uses of microwaves have increased microwave pollution and the consequent risk
to health. This has stimulated the study of the biological effects and safety in several large
research projects.
Table 1.6 summarises the typical and unique applications of microwaves. The scope of microwave
applications in communication industry and basic and applied research is ever increasing. The exten-
sion of microwave techniques into the field of development of optical communication system is one
such example.
Table 1.6
S. No. Applications Frequency band
Receiving Indicating
Transmitting
horn antenna meter or
horn antenna
Power power meter
supply
Calibrated
Wavemeter attenuator
Microwave
source
Waveguide
Waveguide termination
Microwave Crystal
Stand
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lexe
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ad
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dup
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C To power
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To AF to
tch
enna meter ch ula
Ma
Ferr
t
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t
To an
Ma
a c
Dire
M Cir
From
Rotary microwave
joint Directional source
d
coupler che
a t d
a
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Sw e
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T-R switc
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F
To re
Similarly, conventional resonant and anti-resonant circuits are replaced by resonant microwave line
sections known as resonant cavities. Often resonant cavities are used as circuit elements with varying
properties.
When a number of such microwave circuit elements are,connected together, we have a microwave
circuit. The analysis of a microwave circuit can be carried out either in terms of equivalent transmission
line, voltage and current waves or in terms of amplitudes of the incident and reflected waves. The first
approach is called the conventional equivalent impedance description approach while the second is
known as the scattering matrix approach. The latter approach being closely related to the wave nature
of fields.
(iii) Generation and Amplification of Microwaves: The operation of conventional vacuum tubes and
solid state devices is limited by transit time effects. However, the frequency range of operation of these
devices can be extended to the lower edge of the microwave spectrum at the cost of power output and
noise characteristics. Therefore, the development of new devices was essential to exploit this frequency
region. Fortunately, number of new principles of operation such as velocity modulation, interaction of
space charge waves with electromagnetic fields were proposed. It involves transfer of power from a
source of direct voltage to a source of alternating voltage by means of a density-modulated stream of
electrons resulting in the development of klystron (in 1939 by R.H. Varian and S.F. Varian [1]), mag-
netron (in 1921 by Hull and an improved model in 1940 by Boot and Randal [2, 3]) and travelling-wave
tube (TWT) (in 1944 by R. Komfner [4].
The interaction of the impact ionization avalanche and the transit time of charge carriers was used
to develop Reed diode in 1958 [5], IMPATT by Johnston et al. in 1965 [6], TRAPATT by Prager et al.
in 1967 [7]. Quantum mechanical tunneling was used to develop Tunnel Diode by Esaki in 1958 [8].
Transferred electron techniques were used to develop transfer electron devices by Ridley et al. in
1961 [9] and Hilsum in 1962 [10]. Gunn oscillator was developed in 1963 [11] which operate simply
by the application of a dc voltage to a bulk. In all solid-state devices the negative resistance character-
istics is exploited for microwave generation and amplification.
REVIEW QUESTIONS
1. Explain how microwave engineering is different from low frequency electronic engineering. (JNTU, 2008)
2. Describe in brief basic microwave concepts.
3. List unique characteristics of microwaves.
4. List the typical application of microwave.
5. Explain with an example how microwave has large information carrying capacity.
6. Explain “Microwaves are widely used for directive signal transmission and locating and ranging objects in
space”.
SELECTED TITLES
1. Collin, R.E., Foundations for Microwave Engineering, McGraw-Hill Book Company, New York, 1966.
2. Gandhi, O.P., Microwave Engineering and Applications, Pergamon Press, New York, 1981.
3. Liao, S.Y., Microwave Devices and Circuits, Prentice-Hall Inc, Englewood Cliffs, N.J., U.S.A., 1995
[Indian reprint].
4. Soohoo, R.F., Microwave Electronics, Addison-Wesley Publishing Company, Reading, Mass., 1971.
INTRODUCTION 9
5. Reich, H.J., et al., Microwave Principles, D. Van Nostrand Reinhold Company, New York, 1957 (an East-
West Edition).
6. Reich, H.J., et al., Microwave Theory and Techniques, D. Van Nostrand Reinhold Company, New York,
1953.
7. Brownwell, A.B., and R.E. Beam, Theory and Application of Microwaves, McGraw-Hill Book Co.,
New York, 1947.
8. Chatterjee, R., Elements of Microwave Engineering, East-West Press, New Delhi, 1984.
9. Rizzi, P.A., Microwave Engineering: Passive Circuits, Prentice-Hall, Inc., Englewood Cliffs, N.J., 1988.
10. Sisodia, M.L. and G.S. Raghuvanshi, Microwave Circuits and Passive Devices, John Wiley & Sons,
New York, 1987 (Wiley Eastern Limited, New Delhi, 1987, now New Age, 2003).
11. Sisodia, M.L. Microwave Active Devices, Vacuum and Solid State, New Age International Publishers,
New Delhi, 2003.
12. Sisodia, M.L. and G.S. Raghuvanshi, Basic Microwave Techniques and Laboratory Manual, John Wiley &
Sons, 1987. (Wiley Eastern Limited, 2000, New Delhi, now New Age).
13. Sisodia, M.L. and Vijay Laxmi Gupta, Microwaves: Introduction to Circuits, Devices and Antennas,
New Age International Publishers, New Delhi, 2003.
REFERENCES
1. Warnecke, R.R., et al., Velocity Modulated Tubes: The Advances in Electronics, Vol. 3, Academic Press,
New York, 1951.
2. Hull, A.W., Phys. Rev. 18, 31 (1921).
3. Okress, E., Editor, Crossed Field Microwave Devices, Academic Press, New York, Vols. I and II, 1961.
4. Kompfner, R., The Travelling Wave Tube as Amplifier at Microwaves, Pros. IRE 35, 124-127, February 1947.
5. Read, W.T., A Proposed High Frequency Negative-Resistance Diode, Bell System tech. J., 37, 401-446, 1958.
6. Johnston, R.L., B.C. Deloach, and G.B. Cohen, A Silicon Diode Microwave Oscillator, Bell System Tech., J.,
44, 369-372, February 1965.
7. Prager, H.J., et al., High-power, High-efficiency Silicon Avalanche Diodes at Ultra High Frequencies, Proc.
IEEE (letters), 55, 586-587, April 1967.
8. Esaki, L., New Phenomenon in Narrow Ge p-n Junctions, Phys. Rev., 109, 603, 1958.
9. Ridley, B.K. and T.B. Watkins, The Possibility of Negative Resistance Effect in Semiconductors, Proc. Phys.
Soc., 78, 293-304, August 1961.
10. Hilsum, C., Transferred Electron Amplifiers and Oscillators, Proc. IEEE., 50, 185-189 February 1962.
11. Gunn, J.B., Instabilities of Current in III-V Semiconductors, IBM J. Res. Develop., 8, 141-159, April 1964.