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Isotropic Anisotropic
Isotropic vs. Anisotropic
• hf = thickness of the thin film
• l= lateral distance etched underneath
• Af = degree of anisotropic
• Af = 1- l/hf
Anisotropic
• Af = degree of isotropic
• hf = l
• Af = 0
isotropic
Plasma etching
• There are five classes of plasma etching
mechanisms
– Sputter etching
– Chemical etching
– Accelerated ion-assisted etching
– Sidewall-protected ion-assisted etching
– Reactive ion etching (RIE)
Sputter etching
• Highly anisotropic
• A purely physical process
• Very similar to ion implantation but low energy
ions are used to avoid implantation damage
Chemical etching
• isotropic
• Plasma is used to produce chemically reactive
species (atoms radical and ions) from inert
molecular gas.
• Production of gas by products is extremely
important
Accelerated ion –assisted etching
• Like the sputter etching ions are accelerated
by the sheath potential
Sidewall-protected ion-assisted
etching
• Can be anisotropic
• Involves additional species to create a
protective sidewall barrier.
Reactive ion etching
• Process in which chemical etching is accompanied by no undercutting
since side-wall are not exposed (ie. Ion assisted etching)
• Bombardment opens areas for reactions
• Low selectivity
Parameters in plasma