MUR880E ®

Pb
MUR880E
Pb Free Plating Product
8 Ampere,800 Volt Epitaxial Type Ultra Fast Recovery Rectifier Diode

TO-220AC Unit: mm
Features
‘ Fast switching for high efficiency
‘ Low forward voltage drop
‘ High current capability
‘ Low reverse leakage current
‘ High surge current capability

Mechanical Data 2

‘ Case: TO-220C-2P Heatsink

‘ Epoxy: UL 94V-0 rate flame retardant
‘ Terminals: Solderable per MIL-STD-202
method 208
‘ Polarity:Color band denotes cathode
‘ Mounting position: Any
‘ Weight: 2.05 gram approximately

Maximum Ratings and Electrical Characteristics

Rating at 25 к ambient temperature unless otherwise specified.

Parameter Symbol MUR880E Units

Maximum Recurrent Peak Reverse Voltage VRRM 800 V
Maximum RMS Voltage VRMS 560 V
Maximum DC Blocking Voltage VDC 800 V
Maximum Average Forward Rectified Current IF(AV) 8 A
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
IFSM 100 A
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
VF 1.8 V
@8A
Maximum DC Reverse Current @ TA=25 к 5
IR uA
at Rated DC Blocking Voltage @ TA=125 к 100
Maximum Reverse Recovery Time (Note 2) Trr 40 nS
Typical Junction Capacitance (Note 3) Cj 50 pF
Typical Thermal Resistance RθJC 1.5 к/W
Operating Temperature Range TJ - 55 to + 150 к
Storage Temperature Range TSTG - 55 to + 150 к

Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle

Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

Rev.05 Page 1/2

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

 MUR880E ®

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

12 1000
Average Forward Rectified Current (A)

Resistive or Inductive Load

Instantaneous Reverse Leakage

10 TJ = 150 °C
100 TJ = 125 °C

8 TJ = 100 °C

Current (μA)
10
6

4
TJ = 25 °C
2 5

0 0.01
0 25 50 75 100 125 150 0 20 40 60 80 100
Case Ambient Temperature (°C) Percent of Rated Peak Reverse Voltage (%)

Figure 1. Forward Current Derating Curve Figure 4. Typical Reverse Leakage Characteristics

150 100
TJ = 25 °C
Peak Forward Surge Current (A)

TL = 75 °C f = 1.0 MHz
125
8.3 ms Single Half Sine-Wave Vsig = 50 mVp-p
Junction Capacitance (pF)

100

75

50

25

0 10
1 10 100 1 10 100
Number of Cycles at 60 Hz Reverse Voltage (V)

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Figure 5. Typical Junction Capacitance

100
Instantaneous Forward Current (A)

TJ = 150 °C TJ = 25 °C
10

TJ = 100 °C
1
TJ = 125 °C

Pulse Width = 300 μs

1 % Duty Cycle
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics

Rev.05 Page 2/2

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/