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Thyristor Devices
Thyristors are a broad classification of
semiconductor devices having four
alternating N-P-N-P layers. These include
the silicon controlled rectifier (SCR), the
TRIAC, the silicon controlled switch (SCS),
the AC diode (DIAC), and variations on
these devices.
William Shockley proposed the four-layer
diode thyristor in 1950, but a practical
device was not developed until years later at
General Electric. SCRs are now available to
handle power levels from watts to
megawatts. Small scale devices are
packaged like small-signal transistors, and
are capable of switching 100’s of milliamps
at near 100 VAC. The largest packaged
devices are almost 7-inches (172mm) in
diameter, switching 5600 amps at 10,000
VAC.
Thyristors are most often found useful for
electrical power control applications.
Silicon Controlled Rectifiers
The most prominent member of the
thyristor family is the silicon controlled
rectifier (SCR). The SCR is a three junction
semiconductor device which behaves like a
triggered diode.