BOE D MM 8235605 OO4S840 Sub MMSIEG SIEMENS NS AKTIENGESELLSCHAF STENE qa3-Or IGBT Module BSM 50 GB 100D Preliminary Data BSM 50 GAL 100 D Voce = 1000 V © Power module @ Halt-bridge/Chopper © Including fast free-wheel diodes @ Package with insulated metal base plate @ Package outlines/Circuit diagram: 2b, 2c”” Halt-bridge Chopper Type | Ordering Code Type ‘Ordering code BSM 50 GB 100 D | C67076-A2100-A2 BSM 50 GAL 100 D (C67076-A2002-A2 Maximum Ratings: Parameter Symbol __| Values Unit Collector-emitter voltage Vee 1000 Z Vv Collector-gate voltage, Roe = 20 k2 Vos 1000 Gate-emitter voltage Vee =20 Continuous collector current, Te = 25°C Ie 70 A To = 80°C 50 Pulsed collector current, > = 25°C Yep 140 T. =80°C | 100 Operating and storage temperature range | Tp Tog - 55... + 150 c Power dissipation, T, = 25 °C. Pax 500 w Thermal resistance, chip-case Rive 0.25 Kw Insulation test voltage”, ¢ = 1 min. Ve 2500 Vac Creepage distance 7 16 mm Clearance | 4 DIN humidity category, DIN 40 040 = F 7 IEC climatic category, DIN IEC 68-1 = 55/150/56 » See chapter Package Outline and Circutt Diagrams. ® Insulation test voltage between collector and metal base plate referred to standard climate 23/50 in ace. with DIN 50 014, IEC 146, para. 492.1 Semiconductor Group 204bOE D MM 8235605 0045841 482 MMSIEG IEME BSM 50 GB 100 D s ai BSM 50 GAL 100 D SIEMENS AKTIENGESELLSCHAF © Electrical Characteristics at I, = 25°C, unless otherwise specified. Parameter Symbol Values | Unit min. |typ. _| max. Static Characteristics Collector-emitter breakdown voltage TVeamces v Vee =0, fe = 1mA 1000 |- - Gate threshold voltage Voeion ] Vee = Voz: = 4 mA 48 55 62 Collector-emitter saturation voltage Vozioan 50A - 28 33 - 4.0 45 Zero gate voltage collector current lees ' yA Vce = 1000 V, Vaz = 0 1, =28°C - - 1000 T, = 125°C - - 4000 Gate-emitter leakage current foes nA Vee = 20 V, Vee = 0 = IL 100 AC Characteristics Forward transconductance Bie 18 - 7 s Vee = 20 V, f= 50A | Input capacitance Cus - 000 |- pF Vce = 25 V, Vor = 0, f= 1 MHz Output capacitance, Ves = 0 Coss fe 640 fe Vee = 25 V, Voe = 0, f= 1 MHz Reverse transfer capacitance Gus = 250 |- Vee = 25 V. Vae = 0,f= 1 MHz | Semiconductor Group 205BOE D MM 8235605 0045842 319 MMSIEG SIEMENS BSM 50 GB 100 D BSM 50 GAL 100 D SIEMENS AKTIENGESELLSCHAF ‘Switching Characteristics atT = 125 C, unless otherwise specified Parameter | Symbot Values Unit min. typ. max. Resistive Load Turn-on delay time ey ns Veo = 600 V, Vor = 15 V, = 50A Ro ton) = 3.3.2 Ry jon) = 3.3.2 20 30 40 Rise time 4 | Vog = 600 V, Vor = 15 V, = 50A Reten = 3.3.2, Recor ] 140 |- Turn-off delay time favor) Voc = 600 V, Veg = 15 V, = 50A | Rg ion, = 3.3.Q, Raion) = 3.3.2 - _|300 - Fall time h Veo = 600 V, Vox = 15 V, p= 50A Reon) = 3.3.Q, Rojo) = 3.32 - 300 - Inductive Load Turn-on delay time Ga : 7 Voc = 600 V, Veg = 15 V, = 50A Ry (on = 3.3.2, Roy = 3.3.2 20 30 40 Rise time t Veo = 600 V, Voe = 15 V, lo = 50 Rg con) = 3.3. 2, Ro fon = 3.3. Q 10 20 25 Turn-off delay time atom) Veo = 600 V, Veg = 15 V, lo = 50 Ry om = 3-3 Q, Ro ion = 3.3.Q 220 300 360 Fall time Voc = 600 V, Vor = 15 V, = 50A | Ry fon) = 3.3. Q, Ro gon, = 3.3.Q 25 35 45 Turn-off loss (Eo = Eau 1 + Ean) i 2.0 = mWs Voc = 600 V, Vee SOA - 2.0 - Semiconductor Group 206SOE D MM 8235605 0045843 255 MMSIEG 1E BSM 50 GB 100 D SIEMENS BSM 50 GAL 100 D SIEMENS AKTIENGESELLSCHAF Electrical Characteristics at7, = 25 C, unless otherwise specified. Parameter ‘Symbol Values Unit min, |typ. | max. Free-Wheel Diode Diode forward voltage ve Vv & =50A, Vor =0 | T, =25 - 1850 |- T, = 125°C - [145 |- Reverse recovery time by us ke =50A, Vq=600V Vee = 0, dipfdt = - 800 Als T, =125 - 02 - Reverse recovery charge Qu uc 50 A, Va = 600 V , disidt = ~ 800 Ajus 225°C = 36 - T, =125C 7 [10 S Soft factor Ss - ke =50A, Va =600V Vee = 0, di-/dr = — 800 Aijis 1, =125C - 1 - Thermal resistance Ric - - 0.9 KW Chup-case ‘Semiconductor Group 207BOE D MM 4235605 0045844 191 MBSIEG BSM 50 GB 100 D SIEMENS BSM 50 GAL 100 D SIEMENS AKTIENGESELLSCHAF Characteristics at T, = 25 'C, unless otherwise specified. Power dissipation P..; = f (7) Safe operating area I, = f (Vcc) parameter: T, = 150 C parameter: single pulse, T; = 25°C 7s 150°C 5804 sire0026 as sions wi | | ] Far 500 450 1 bpp 400 t | | 350 ++ | 300 i | 250 + 200 t | UN | 150 mH 100 50 t + ° t 0% 40 60 BO 100 120 MOC MO —-r, Typ. output characteristics /, = / (Vcc) Typ. output characteristics /, = (Vcc) parameter: 1, = 80 us, 1, < 25°C parameter: f, = 80 4s, T,< 125°C i siozer Genes aes syoo22e ! Yee= 20¥ | We= 20v | Ut 7 18y : 16y | tev | 15v | I 15Y pe ; av | Li iv | av 1 tov iov | | 60 ' re | 60 TI LI 40 40 20 20 | | 9, La 6 lovee entsetsen otnURatEaEaeyTEViES (eect eure Ouece are eerdueyens, Vg —~% Semiconductor Group 208BOE D MM 8235b05 0045845 O28 MBSIEG SIEMENS BSM 50 GB 100 D BSM 50 GAL 100 D ~ SIEMENS AKTIENGESELLSCHAF Reverse biased safe operating area Safe operating area, Jo =f (Voe), parameter: T, = 125°C, ircult I =f (Vee), Vor=+15V Voe = 18 V, Roan = 3.3.2, T,$ 150 °C, fee $ 10 us, L < 50 nH (parastic inductance, module) < 50 nH ssi001 sxe 1 12 . ew Tess 10 rt ty 8 | i T ce 2C | Note. ey Lyal ok | Sere cid ad 0 200 400 600 800 1000¥ 1200 Ne rere Transient thermal impedance Typ. on-state characteristics Zoe = f (lp), parameter: D = 1,/T Voe isa = f (Vee), parameter: Ic, T, 1100030 2 rT v LL 4 50a. 7 Yeetean : | 25a. [15a — T=25C 1 rea FS ‘Semiconductor Group 209bOE D 8235605 GO4Sa46 ThY MESIEG SIEMENS — SIEMENS AKTIENGESELLSCHAF Collector current /< = f (Tc) parameter: Voc > 15 V, T, = 150°C soos ‘Typ. transfer characteristics /o = f (Var) parameter: f, = 80 us, Vor = 20 V BSM 50 GB 100 D _ BSM 50 GAL 100 D ‘Typ. capacitances C = f (Vee) parameter: Ver = 0, f= 1 MHz sii90032 10? nF s Typ. gate charge Vcc. Vee =f (Qo) = suocozs eet 10 v A 4p yt - k fae soov ft 800 600V ~ ‘ 00v ' | | = 600 —| ‘ vy aia t 400 | | a ; | 200 1b + + Pee es t ; 0 ~ lL ee agaeeatgay tt ao 0 Vv 20 0 200 400 600 nC 800 ae =o, ‘Semiconductor Group 2106OE D MM 8235605 004584? ITO MMSIEG BSM 50 GB 100 D SIEMENS BSM 50 GAL 100 D SIEMENS AKTIENGESELLSCHAF Forward characteristics of fast recovery reverse diode /, = (Vs) parameter: T, sioorss 190 v 25 05 1 (15 ~% Typ. switching time / = f (Rc) Typ. switching time 1 =f (fo) Inductive load, parameter: 7 i Inductive load, parameter: 7 Voce = 600 V, Vee = +15 V. J Vor = 600 V, Veg == 15 V, Re = 22.2 ia sons al soon ys us 5 5 / t 10? = y | elo 5 ie; 5 Leet 10" to" 5 5 f 107 OES eroeereeeorcereeereaeea 10% 5 10 5 10? 0 10 20 30 40 A 50 Semiconductor Group ait