BSM 50 GB 120 DN2

IGBT Power Module

• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate

Type VCE IC Package Ordering Code

BSM 50 GB 120 DN2 1200V 78A HALF-BRIDGE 1 C67076-A2105-A70

Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 1200 V
Collector-gate voltage VCGR
RGE = 20 kΩ 1200
Gate-emitter voltage VGE ± 20
DC collector current IC A
TC = 25 °C 78
TC = 80 °C 50
Pulsed collector current, tp = 1 ms ICpuls
TC = 25 °C 156
TC = 80 °C 100
Power dissipation per IGBT Ptot W
TC = 25 °C 400
Chip temperature Tj + 150 °C
Storage temperature Tstg -55 ... + 150

Thermal resistance, chip case RthJC ≤ 0.3 K/W

Diode thermal resistance, chip case RthJCD ≤ 0.6
Insulation test voltage, t = 1min. Vis 2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F -
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Semiconductor Group 1 Mar-29-1996

 BSM 50 GB 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Static Characteristics
Gate threshold voltage VGE(th) V
VGE = VCE, IC = 2 mA 4.5 5.5 6.5
Collector-emitter saturation voltage VCE(sat)
VGE = 15 V, IC = 50 A, Tj = 25 °C - 2.5 3
VGE = 15 V, IC = 50 A, Tj = 125 °C - 3.1 3.7
Zero gate voltage collector current ICES mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C - 0.8 1
VCE = 1200 V, VGE = 0 V, Tj = 125 °C - 3.5 -
Gate-emitter leakage current IGES nA
VGE = 20 V, VCE = 0 V - - 200

AC Characteristics
Transconductance gfs S
VCE = 20 V, IC = 50 A 23 - -
Input capacitance Ciss nF
VCE = 25 V, VGE = 0 V, f = 1 MHz - 3.3 -
Output capacitance Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz - 0.5 -
Reverse transfer capacitance Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz - 0.25 -

Semiconductor Group 2 Mar-29-1996

 BSM 50 GB 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time td(on) ns
VCC = 600 V, VGE = 15 V, IC = 50 A
RGon = 22 Ω - 44 100
Rise time tr
VCC = 600 V, VGE = 15 V, IC = 50 A
RGon = 22 Ω - 56 100
Turn-off delay time td(off)
VCC = 600 V, VGE = -15 V, IC = 50 A
RGoff = 22 Ω - 380 500
Fall time tf
VCC = 600 V, VGE = -15 V, IC = 50 A
RGoff = 22 Ω - 70 100

Free-Wheel Diode
Diode forward voltage VF V
IF = 50 A, VGE = 0 V, Tj = 25 °C - 2.3 2.8
IF = 50 A, VGE = 0 V, Tj = 125 °C - 1.8 -
Reverse recovery time trr µs
IF = 50 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs, Tj = 125 °C - 0.2 -
Reverse recovery charge Qrr µC
IF = 50 A, VGE = 0 V
VR = -600 V, diF/dt = -800 A/µs, Tj = 25 °C - 2.8 -
VR - 600 V, diF/dt - 800 A/µs, Tj = 125 °C - 8 -

Semiconductor Group 3 Mar-29-1996

 BSM 50 GB 120 DN2

Power dissipation Safe operating area

Ptot = ƒ(TC) IC = ƒ(VCE)
parameter: Tj ≤ 150 °C parameter: D = 0, TC = 25°C , Tj ≤ 150 °C

450 10 3

W A
tp = 14.0µs

Ptot 350 IC
10 2

300
100 µs

250
10 1

200
1 ms

150
10 ms
10 0
100

50 DC

0 10 -1
0 1 2 3
0 20 40 60 80 100 120 °C 160 10 10 10 10 V
TC VCE

Collector current Transient thermal impedance IGBT

IC = ƒ(TC) Zth JC = ƒ(tp)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C parameter: D = tp / T

90 10 0

A K/W

IC 70 ZthJC
10 -1

60

50
10 -2
D = 0.50
40
0.20

30 0.10
0.05
10 -3 single pulse
20 0.02
0.01
10

0 10 -4
-5 -4 -3 -2 -1 0
0 20 40 60 80 100 120 °C 160 10 10 10 10 10 s 10
TC tp

Semiconductor Group 4 Mar-29-1996

 BSM 50 GB 120 DN2

Typ. output characteristics Typ. output characteristics

IC = f (VCE) IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C

100 100

A A
17V 17V
80 15V 80 15V
IC 13V IC 13V
11V 11V
70 9V 70 9V
7V 7V
60 60

50 50

40 40

30 30

20 20

10 10

0 0
0 1 2 3 V 5 0 1 2 3 V 5
VCE VCE

Typ. transfer characteristics

IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V

100

IC 80

70

60

50

40

30

20

10

0
0 2 4 6 8 10 V 14
VGE

Semiconductor Group 5 Mar-29-1996

 BSM 50 GB 120 DN2

Typ. gate charge Typ. capacitances

VGE = ƒ(QGate) C = f (VCE)
parameter: IC puls = 50 A parameter: VGE = 0, f = 1 MHz

20 10 2

V
nF
VGE 16 C

14 600 V 800 V
10 1

12

10 Ciss

8
10 0
6

Coss
4

2 Crss

0 10 -1
0 40 80 120 160 200 240 280 nC 340 0 5 10 15 20 25 30 V 40
QGate VCE

Reverse biased safe operating area Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150°C ICsc = f(VCE) , Tj = 150°C
parameter: VGE = 15 V parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH

2.5 12

ICpuls/IC ICsc/IC

8
1.5

1.0

0.5
2

0.0 0
0 200 400 600 800 1000 1200 V 1600 0 200 400 600 800 1000 1200 V 1600
VCE VCE

Semiconductor Group 6 Mar-29-1996

 BSM 50 GB 120 DN2

Typ. switching time Typ. switching time

I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 22 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 50 A

10 3 10 4

ns
t tdoff t
ns
tdoff
10 3

10 2 tr

tr
tf tdon
tdon 10 2
tf

10 1 10 1
0 20 40 60 80 A 120 0 20 40 60 80 Ω 120
IC RG

Typ. switching losses Typ. switching losses

E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 22 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 50 A

25 25

Eon

E mWs E mWs

Eon

15 15

10 10
Eoff

Eoff

5 5

0 0
0 20 40 60 80 A 120 0 20 40 60 80 Ω 120
IC RG

Semiconductor Group 7 Mar-29-1996

 BSM 50 GB 120 DN2

Forward characteristics of fast recovery Transient thermal impedance Diode

reverse diode IF = f(VF) Zth JC = ƒ(tp)
parameter: Tj parameter: D = tp / T

100 10 0

A K/W

IF 80 ZthJC
10 -1
70

60
Tj=125°C Tj=25°C
50 10 -2
D = 0.50

40 0.20
0.10
30 0.05
10 -3 single pulse
0.02
20
0.01
10

0 10 -4
-5 -4 -3 -2 -1 0
0.0 0.5 1.0 1.5 2.0 V 3.0 10 10 10 10 10 s 10
VF tp

Semiconductor Group 8 Mar-29-1996

 BSM 50 GB 120 DN2

Circuit Diagram

Package Outlines
Dimensions in mm
Weight: 250 g

Semiconductor Group 9 Mar-29-1996