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VND7NV04, VND7NV04-1
OMNIFET II
fully autoprotected Power MOSFET
Features
VNN7NV04 3
2
VNS7NV04 1
60 mΩ 6A 40 V SOT-223 SO-8
VND7NV04
VND7NV04-1
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
Description
■ Direct access to the gate of the Power The VNN7NV04, VNS7NV04, VND7NV04
MOSFET (analog driving) VND7NV04-1, are monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
■ Compatible with standard Power MOSFET in
intended for replacement of standard Power
compliance with the 2002/95/EC European
MOSFETs from DC up to 50 kHz applications.
Directive
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Contents
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3.2 SO-8 maximum demagnetization energy . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.3 DPAK maximum demagnetization energy . . . . . . . . . . . . . . . . . . . . . . . . 18
3.4 SOT-223 maximum demagnetization energy . . . . . . . . . . . . . . . . . . . . . . 19
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
List of tables
List of figures
Overvoltage
Clamp
INPUT
Gate
1 Control
Linear
Current
Over Limiter
Temperature
3
SOURCE
FC01000
SO-8 Package(1)
SOURCE 1 8 DRAIN
SOURCE DRAIN
SOURCE DRAIN
INPUT 4 5 DRAIN
1. For the pins configuration related to SOT-223, DPAK, IPAK see outlines at page 1.
2 Electrical specifications
ID
VDS
DRAIN
IIN RIN
INPUT
SOURCE
VIN
Off
Drain-source clamp
VCLAMP VIN=0 V; ID=3.5 A 40 45 55 V
voltage
Drain-source clamp
VCLTH VIN=0 V; ID=2 mA 36 V
threshold voltage
VINTH Input threshold voltage VDS=VIN; ID=1 mA 0.5 2.5 V
Supply current from input
IISS VDS=0 V; VIN=5 V 100 150 µA
pin
On
Forward
gfs (1) VDD=13 V; ID=3.5 A 9 S
transconductance
COSS Output capacitance VDS=13 V; f=1 MHz; VIN=0 V 220 pF
3 Protection features
During normal operation, the input pin is electrically connected to the gate of the internal
Power MOSFET through a low impedance path.
The device then behaves like a standard Power MOSFET and can be used as a switch from
DC up to 50 kHz. The only difference from the user’s standpoint is that a small DC current
IISS (typ. 100µA) flows into the input pin in order to supply the internal circuitry.
The device integrates:
● Overvoltage clamp protection: internally set at 45 V, along with the rugged avalanche
characteristics of the Power MOSFET stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly important when driving inductive
loads.
● Linear current limiter circuit: limits the drain current ID to Ilim whatever the input pin
voltages. When the current limiter is active, the device operates in the linear region, so
power dissipation may exceed the capability of the heatsink. Both case and junction
temperatures increase, and if this phase lasts long enough, junction temperature may
reach the over temperature threshold Tjsh.
● Over temperature and short circuit protection: these are based on sensing the chip
temperature and are not dependent on the input voltage. The location of the sensing
element on the chip in the power stage area ensures fast, accurate detection of the
junction temperature. Over temperature cutout occurs in the range 150 to 190 °C, a
typical value being 170 °C. The device is automatically restarted when the chip
temperature falls of about 15 °C below shutdown temperature.
● Status feedback: in the case of an over temperature fault condition (Tj > Tjsh), the
device tries to sink a diagnostic current Igf through the input pin in order to indicate fault
condition. If driven from a low impedance source, this current may be used in order to
warn the control circuit of a device shutdown. If the drive impedance is high enough so
that the input pin driver is not able to supply the current Igf, the input pin will fall to 0 V.
This will not however affect the device operation: no requirement is put on the current
capability of the input pin driver except to be able to supply the normal operation drive
current IISS.
Additional features of this device are ESD protection according to the Human Body model
and the ability to be driven from a TTL logic circuit.
ID
90%
tr tf
10%
t
td(on) td(off)
Vgen
A
A
D
I FAST L=100uH
OMNIFET DIODE
S B
B
150Ω
D
VDD
Rgen
I
OMNIFET
Vgen
S
8.5 Ω
Figure 6. Unclamped inductive load test Figure 7. Input charge test circuit
circuits
VIN
RGEN
VIN
PW
Gfs (S)
20
18
Vds=13V
16
Tj=-40ºC
14 Tj=25ºC
Tj=150ºC
12
10
0
0 1 2 3 4 5 6 7 8
Id(A)
Figure 11. Static drain-source on resistance Figure 12. Static drain-source on resistance
vs input voltage (part 1/2) vs input voltage (part 2/2)
Rds(on) (mOhm)
Rds(on) (mOhm)
140
120
110
Id=3.5A 120
100 Tj=150ºC
90 100
Tj=150ºC
80 Id=6A
Id=1A
70 80
60
60 Tj=25ºC
50
Tj=25ºC
40 Id=6A
Tj=-40ºC
40
30 Id=1A
Tj= - 40ºC
Id=6A
20 Id=1A
20
10
0 0
3 3.5 4 4.5 5 5.5 6 6.5 7 3 3.5 4 4.5 5 5.5 6 6.5
Vin(V)
Vin(V)
Figure 13. Source-drain diode forward Figure 14. Static drain source on resistance
characteristics
950
Vin=0V
125
900
Vin=5V
850
100
Tj=150ºC
800
750 75
700
50
650 Tj=25ºC
600 Tj=-40ºC
25
550
500 0
0 2 4 6 8 10 12 14 0 1 2 3 4 5 6
Id(A) Id(A)
Figure 15. Turn-on current slope (part 1/2) Figure 16. Turn-on current slope (part 2/2)
di/dt(A/us) di/dt(A/us)
2.25 8
2 7
Vin=3.5V Vin=5V
1.75 Vdd=15V 6 Vdd=15V
Id=3.5A Id=3.5A
1.5 5
1.25 4
1 3
0.75 2
0.5 1
0.25 0
100 200 300 400 500 600 700 800 900 1000 1100 100 200 300 400 500 600 700 800 900 1000 1100
Rg(ohm) Rg(ohm)
7 100 Tj=150ºC
Vin=5V
6
80
5
60 Vin=3.5V
4
Tj=25ºC
Vin=5V
3 40 Vin=3.5V
Tj=-40ºC
2 Vin=5V
20
1
0 0
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Vin(V) Id(A)
Figure 19. Input voltage vs input charge Figure 20. Turn-off drain source voltage slope
(part 1/2)
dv/dt(V/us)
Vin(V)
300
8
7 250
Vds=12V
Id=3.5A Vin=5V
6
200 Vdd=15V
5 Id=3.5A
150
4
3 100
2
50
1
0
0 100 200 300 400 500 600 700 800 900 1000 1100
0 5 10 15 20 25
Rg(ohm)
Qg(nC)
Figure 21. Turn-off drain source voltage slope Figure 22. Capacitance variations
(part 2/2)
dv/dt(v/us) C(pF)
600
300
250
500
Vin=3.5V f=1MHz
200 Vdd=15V Vin=0V
Id=3.5A 400
150
300
100
50 200
0
100
100 200 300 400 500 600 700 800 900 1000 1100
0 5 10 15 20 25 30 35
Rg(ohm) Vds(V)
ID(A) Rds(on)
12 2.25
11
2
10
Vin=5V
Vin=5V
9 Id=3.5A
Vin=4.5V 1.75
8 Vin=4V
7 1.5
Vin=3V
6
5 1.25
4
1
3
Vin=2.5V
2
0.75
1
Vin=2V
0 0.5
0 1 2 3 4 5 6 7 8 9 10 11 12 13 -50 -25 0 25 50 75 100 125 150 175
VDS(V) T(ºC)
Figure 25. Switching time resistive load (part Figure 26. Switching time resistive load (part
1/2) 2/2)
t(us) t(ns)
5.5 1600
tr
5
Vdd=15V tr 1400
4.5 Id=3.5A
td(off) Vdd=15V
4 Vin=5V 1200 Id=3.5A
tf Rg=150ohm
3.5
1000
3
2.5 800
2
600
1.5 td(off)
400
1 tf
td(on)
0.5 200
0 td(on)
0 250 500 750 1000 1250 1500 1750 2000 2250 2500 0
3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25
Rg(ohm) Vin(V)
Figure 27. Normalized input threshold voltage Figure 28. Normalized current limit vs junction
vs temperature temperature
1.1 14
Vds=Vin Vds=13V
13
1.05 Vin=5V
Id=1mA
12
1
11
0.95
10
0.9
9
0.85
8
0.8
7
0.75 6
0.7 5
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
T(ºC) Tj (ºC)
Tdlim(us)
7
6.5
Vin=5V
Rg=150ohm
6
5.5
4.5
3.5
5 10 15 20 25 30 35
Vdd(V)
10
A
B
C
1
0.1 1 10 100
L(mH)
Legend
A = Single Pulse at TJstart=150 °C
B = Repetitive pulse at TJstart=100 °C
C = Repetitive Pulse at TJstart=125 °C
Conditions:
VCC=13.5 V
Values are generated with RL=0 Ω. In case of repetitive pulses, Tjstart (at beginning of each
demagnetization) of every pulse must not exceed the temperature specified above for
curves B and C.
10
1
0.01 0.1 1 10 100
L (m H )
Legend
A = Single Pulse at TJstart=150 °C
B = Repetitive pulse at TJstart=100 °C
C = Repetitive Pulse at TJstart=125 °C
Conditions:
VCC=13.5 V
Values are generated with RL=0 Ω. In case of repetitive pulses, Tjstart (at beginning of each
demagnetization) of every pulse must not exceed the temperature specified above for
curves B and C.
10
1
0.01 0.1 1 10
L(mH)
Legend
A = Single Pulse at TJstart=150 °C
B = Repetitive pulse at TJstart=100 °C
C = Repetitive Pulse at TJstart=125 °C
Conditions:
VCC=13.5 V
Values are generated with RL=0 Ω. In case of repetitive pulses, Tjstart (at beginning of each
demagnetization) of every pulse must not exceed the temperature specified above for
curves B and C.
Note: Layout condition of Rth and Zth measurements (PCB FR4 area=58 mm x 58 mm, PCB
thickness=2 mm, Cu thickness=35 µm, Copper areas: 0.14 cm2, 0.8 cm2, 2 cm2).
Figure 37. Rthj-amb vs PCB copper area in open box free air condition
110
105
100
95
90
85
80
75
70
0 0.5 1 1.5 2 2.5
PCB Cu heatsink area (cm^2)
100
10
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
T ime (s)
Tj C1 C2 C3 C4 C5 C6
R1 R2 R3 R4 R5 R6
Pd
T_amb
R1 (°C/W) 0.2
R2 (°C/W) 0.9
R3 (°C/W) 3.5
R4 (°C/W) 21
R5 (°C/W) 16
R6 (°C/W) 58 28
C1 (W.s/°C) 3.00E-04
C2 (W.s/°C) 9.00E-04
C3 (W.s/°C) 7.50E-03
C4 (W.s/°C) 0.045
C5 (W.s/°C) 0.35
C6 (W.s/°C) 1.05 2
Note: Layout condition of Rth and Zth measurements (PCB FR4 area=58 mm x 58 mm, PCB
thickness=2 mm, Cu thickness=35 µm, Copper areas: 0.11 cm2, 1 cm2, 2 cm2).
Figure 41. Rthj-amb vs PCB copper area in open box free air condition
RTH j-amb (°C/W)
140
130
120
110
100
90
80
70
60
0 0.5 1 1.5 2 2.5
Cu area (cm^2)
100
10
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
T ime (s)
Tj C1 C2 C3 C4 C5 C6
R1 R2 R3 R4 R5 R6
Pd
T_amb
R1 (°C/W) 0.2
R2 (°C/W) 1.1
R3 (°C/W) 4.5
R4 (°C/W) 24
R5 (°C/W) 0.1
R6 (°C/W) 100 45
C1 (W.s/°C) 3.00E-04
C2 (W.s/°C) 9.00E-04
C3 (W.s/°C) 3.00E-02
C4 (W.s/°C) 0.16
C5 (W.s/°C) 1000
C6 (W.s/°C) 0.5 2
Note: Layout condition of Rth and Zth measurements (PCB FR4 area=60 mm x 60 mm, PCB
thickness=2 mm, Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8 cm2).
Figure 45. Rthj-amb vs PCB copper area in open box free air condition
RTH j_amb (ºC/W)
90
80
70
60
50
40
30
0 2 4 6 8 10
PCB CU heatsink area (cm^2)
100
10
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
T ime (s)
Tj C1 C2 C3 C4 C5 C6
R1 R2 R3 R4 R5 R6
Pd
T_amb
R1 (°C/W) 0.1
R2 (°C/W) 0.35
R3 (°C/W) 1.20
R4 (°C/W) 2
R5 (°C/W) 15
R6 (°C/W) 61 24
C1 (W.s/°C) 0.0006
C2 (W.s/°C) 0.0021
C3 (W.s/°C) 0.05
C4 (W.s/°C) 0.3
C5 (W.s/°C) 0.45
C6 (W.s/°C) 0.8 5
A 2.2 2.4
A1 0.9 1.1
A3 0.7 1.3
B 0.64 0.9
B2 5.2 5.4
B3 0.85
B5 0.3
B6 0.95
C 0.45 0.6
C2 0.48 0.6
D 6 6.2
E 6.4 6.6
G 4.4 4.6
H 15.9 16.3
L 9 9.4
L1 0.8 1.2
L2 0.8 1
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
B 0.64 0.90
B2 5.20 5.40
C 0.45 0.60
C2 0.48 0.60
D 6.00 6.20
D1 5.1
E 6.40 6.60
E1 4.7
e 2.28
G 4.40 4.60
H 9.35 10.10
L2 0.8
L4 0.60 1.00
R 0.2
V2 0° 8°
Package Weight Gr. 0.29
P032P
A 1.8
B 0.6 0.7 0.85
B1 2.9 3 3.15
c 0.24 0.26 0.35
D 6.3 6.5 6.7
e 2.3
e1 4.6
E 3.3 3.5 3.7
H 6.7 7 7.3
V 10 (max)
A1 0.02 0.1
0046067
A 1.75
a1 0.1 0.25
a2 1.65
a3 0.65 0.85
b 0.35 0.48
A 1.75
A1 0.10 0.25
A2 1.25
b 0.28 0.48
c 0.17 0.23
D(1) 4.80 4.90 5.00
E 5.80 6.00 6.20
E1(2) 3.80 3.90 4.00
e 1.27
h 0.25 0.50
L 0.40 1.27
L1 1.04
k 0° 8°
ccc 0.10
1. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs
shall not exceed 0.15 mm in total (both side).
2. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not
exceed 0.25 mm per side.
0016023 D
REEL DIMENSIONS
Base Q.ty 1000
Bulk Q.ty 1000
A (max) 330
B (min) 1.5
C (± 0.2) 13
F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2
End
Start
B
C Base Q.ty 100
Bulk Q.ty 2000
Tube length (± 0.5) 532
A
A 3.2
B 6
C (± 0.1) 0.6
REEL DIMENSIONS
Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13
F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2
Start
A
6 .7 1 .8 3 .0 1 .6 C
Base Q.ty 75
Bulk Q.ty 3000
2 .3
6 .7 Tube length (± 0.5) 532
2 .3
A 6
B
B 21.3
C (± 0.1) 0.6
REEL DIMENSIONS
Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13
F 20.2
G (+ 2 / -0) 16.4
N (min) 60
T (max) 22.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width W 16
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 7.5
Compartment Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2
Start
A
C
Base Q.ty 75
Bulk Q.ty 3000
Tube length (± 0.5) 532
B A 6
B 21.3
C (± 0.1) 0.6
6 Revision history
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