Microelctronics Journal 27 (1996) 149-159

(, S . . /
Copyright O 1996 Elsevier Science Limited
Printed in Great Britain. All rights reserved
0026-2692/96/$15.00
ELSEVIER

0026-2692(95)00084-4

Simulation of
power
semiconductor
systems as an
educational tool
Jaroslav 2:fi ek
Department of Electrotechnology, Faculty of ElectricalEngineering, Czech Technical
University, Technickfi 2, I66 27 Praha 6, Czech Republic.
Tel: +422 2435 2198. Fax: +422 311 1786. E-mail: zacek@feld.cvut.cz

The paper presents a brief overview of methods and tools
used for modelling of power semiconductor systems in
educational practice. Sinmlated phenomena, models of
semiconductor devices, and software tools are classified;
mutual availabilityis discussed. Special attention is given to
the simplified device models applied to the simulation of
complicated phenomena, combining commutation and
control processesof power semiconductor converters. Two
principal sets of simulation tools are recommended--non-
linear static models in po:rt diagram and switch models in
block diagram. Both cases are illustrated by the examples
solved. Some possible applications in educational practice
are outlined.
1. Introduction
p ower semiconductor systems--converters
and s w i t c h e s - - are very effective and, until
techniques. Such evolution must also be
reflected in advancement o f the content and
form o f educational methods for power
semiconductor systems. The experimental
portion o f teaching makes heavy demands on
laboratory equipment and is, therefore, very
often substituted by or complemented with
computer-aided simulation techniques. The
availability o f computer technology and suitable
software contribute to making the use o f this
fast, effective and economical method o f system
analysis quite common.
Modelling o f power semiconductor systems and
simuhtion of different operational
extraordinary phenomena are now considered
or

now, have been indispensable equipment for the
conversion and control o f electrical energy. The
increasing demands on the compatibility o f such
systems are best solved by ingenious control
modes using modern, fully controlled power
semiconductor devices and microprocessor
quite usual educational tools. There are some
relevant reasons for this. Such a method provides:
(1) facilities for demonstration o f phenomena in
a maximally objective form, free o f any
distortive secondary effects;

149
J. Zabek/Simulation of power semiconductor systems
(2) facilities for different parameter variations
and for investigation of their influence;
(3) facilities for modelling of such systems and
simulation of such phenomena, which are
unrealizable on real equipment either for
economical or for safety reasons;
(4) facilities for individual, independent and safe
experimentation by students.
A modelled power semiconductor system is
assembled from power semiconductor devices,
with their typical non-linear static and dynamic
characteristics, and from additional circuit
elements (resistors, capacitors and reactors) with
either linear or non-linear characteristics. For
simulation purposes, the system model is
completed with the models of sources, loads and
control equipment.
The fundamental problem here is that a
modelling method for power semiconductor
systems' circuits must be chosen which is
compatible with the choice of software support
and which corresponds with the simulated
phenomena. The demands on these tools when
applied for educational purposes are a bit special:
they should support the understanding of the
substance of the simulated problem; they should
be easy to learn to use and not distract the
student's attention from the simulated problem
to the simulation technique; and they should be
as universal as possible for application for a very
broad class of problems in different courses.
2. Simulation tasks
The characteristic feature of power semi-
conductor systems, which causes many problems
in modelling and simulation, is the considerable
difference of transient speed in particular parts of
the system. Therefore, it is very advantageous to
be able to analyse each of such transients
separately so that different simulation tasks can
be distinguished.
150
2.1 Simulation of internal processes in power
semiconductor devices
The simulated processes, the internal transients
inside the semiconductor structure of the device,
are very fast, within the time range of
approximately 10-9s to 10-6s. Such processes
are analysed mostly to prove static and dynamic
behaviour of newly designed semiconductor
structures. The analysis is limited to one
structure only, in most cases without any
influence of the external circuit. The model of a
power semiconductor device gives an account of
its internal construction; it operates with
technological, geometrical and other internal
parameters of certain semiconductor structures.
Special models are often used for simulating only
a certain group of analysed phenomena. Such
models have a very limited application range and
are hardly qualified for power semiconductor
system analysis.
2.2 Simulation of internal processes in power
semiconductor systems
This task deals with the modelling of
semiconductor system circuits assembled from
power semiconductor devices and from the other
elements with coupled source and load circuits.
With such a model, it is possible to simulate
electrical processes inside the system which are
connected with the commutation among the
devices and which form the output variables of the
converter. These simulated processes are limited,
as a rule, to a few periods of the working
frequency, within a time range of approximately
10-5s to 10-2s. The model serves mostly to
analyse the designed circuit and to prove its
functions in standard as well as in non-standard
(transient and breakdown) processes. Due to the
time range, these processes may be studied
separately from the internal processes inside the
device on the one hand, and from the processes in
load circuits on the other hand. The system model
is constructed as a model of an electrical circuit
that contains power semiconductor devices in
addition to the usual electrical elements. Models of
semiconductor devices represent their substantial
 Microelectronics Journal, Vol. 27, Nos 2-3
static and dynamic chLaracteristics and are usually
assembled in the library of simulation program as
macromodels. The simulation tools for such
purposes are well known and often used. Typical
examples of such means are programs like PSPICE
and its family.
2.3 Simulation of ex~ternal processes of power
semiconductor systems
The simulation of electromechanical or
electrothermal processes in the load circuits of a
power semiconductor system is a very c o m m o n
task in automated technological systems. In such
a way, the time response of motor torque and
speed on control or disturbance signals, and the
time response of thermal processes excited by
control of supply converter, etc. may be verified.
Some phenomena on the input side of the
system (e.g. the course of active, reactive and
distortion power or of power factor as a response
to the control or disturbance signal) can also be
included in this task. As compared with previous
cases, these effects are relatively slow, within the
time range of approximately 10-3s to 102s.
Therefore, the internal processes of the analysed
semiconductor system may often be neglected
and the converter modelled as a controlled
source, either of direct voltage (current) or of
fundamental harmonic of alternating voltage
(current) at output frequency. The system model
is then assembled from a model of a motor,
models of technological equipment, controllers,
etc. The power semiconductor converter is
modelled as a controlled voltage or current
source; power semiconductor devices are not
modelled in any w~ty. The software tools for
modelling of electrical circuits are used, as a rule,
for simulation of this type of problem. Electro-
mechanical, electro-thermal, electro-hydraulic
and other analogies are exploited. The converter
figures as a macromodel, in addition to the
models of the other circuit elements.
2.4 Simulation of combined processes
In some systems, contrary to the above case, the
internal processes in the semiconductor system
cannot be neglected due to their substantial
influence on simulated phenomena. Some
examples are: the simulation of a dc motor with
rectifier during starting and braking when the
intermittent current is respected; the simulation
of speed fluctuations of an ac motor fed by non-
sinusoidal voltage or current from an inverter;
the simulation of the transient effects in a
converter with PWM, etc. The c o m m o n
character of all of these tasks is the simulation of
effects which influence one another and which
have a mutually incommensurable rate of
running. The simulation of a very long time
interval is r e q u i r e d - - w i t h many tens, hundreds
or even thousands of repeating c o m m u t a t i o n s - -
at relatively slowly varying parameters of load or
control. Such a task is both frequently required
and, at the same time, very difficult. The model
of the converter must be assembled from
separate devices modelled as simply as possible,
the goal of which is maximum speed in
obtaining a solution by computer. Classical
simulation tools seem to be insufficient for such
purposes from this point of view, even solved
with up-to-date computer techniques. The
possibilities for such problem solving are
analysed in the following sections of this paper.
3. Models of power semiconductor
devices
The models of power semiconductor devices are
applied in two different tasks of power
semiconductor system analysis mentioned in the
foregoing part of the paper: for simulation of
internal processes in the power semiconductor
system and for simulation of combined
processes, i.e. processes including internal and
external system phenomena. These models can
be classified according to the level of
simplification in several groups.
3.1 Non-linear dynamic models
The non-linear dynamic model is the most
accurate, but, at the same time, the most
complicated representation of the real
151
J. Z bek/Simulation of power semiconductor systems

semiconductor device specified by its definite junction, respecting the influence o f real
producer and type specification. Such a model resistances in the forward and reverse directions.
includes m a x i m u m static and dynamic The curve (see Fig. 1) is then assembled from
parameters and characteristics o f the device, as three smoothly connected parts:
well as their dependence u p o n operational
conditions --voltage, current, temperature, (i) for 0 ~ u ~ U(TO)the curve is exponential
control signals, etc. A set of such models is
available as a model library, which is a substantial i=A(e13"-1) u = ~ l n 1( /) 1+~ (1)
part of a simulation tool. As an example, the
library o f SPICE (U.C. Berkeley) models can
contain even more than 1000 device m o d e l s - -
(ii) for u < 0 the curve is linearized: i = U/RR;
one model of a bipolar transistor has about 40
(iii) for u > U(TO) the curve is linearized:
adjustable parameters. It is obvious that models
of this group are well suited for exact and i= u/RF.
detailed analysis of commutation effects, snubber
Obtaining a smooth connection of these three
functions, etc., that is, for analysis of relatively
parts, one can determine the constants of the
short time intervals within one or a few periods
non-linear model (1) including only the
o f operational frequency, for tasks mentioned in
parameters of static characteristic curve:
Section 2.2. Their exactness can hardly be
evaluated in the case of combined process A = U(TO) B _ __1 In RR__ (2)
simulation, where the dynamic parameters of
RR ln(RR/RF) U(ro) RF
power devices can be neglected, and, in addition,
such models would cause the simulation run of T h e model of a power semiconductor diode is
long time intervals to be unremuneratively slow. so represented by a voltage controlled current
source or a current controlled voltage source; see
3.2 Non-linear static models Fig. 1.
These simplified device models with neglected
dynamic parameters are based on the static non- The model of a controlled device (power
linear volt/ampere characteristic curve and its switching transistor, thyristor, GTO-thyristor)
analytic expression. Such models employ contains, in addition, the forward off-state
external parameters accessible to any user. characteristic, which is defined by the off-state
resistance RD = RR; see Fig. 2. T h e model of
T h e model of a power diode is formed by the the controlled device can be created by serial
static volt/ampere characteristic curve o f the p-n connection o f the diode model and a controlled

R. Ucro}
Fig. 1. Characteristic curve and model of power diode.

152
 Microelectronics Journal, Vol. 27, Nos 2-3
I3,,o,
Fig. 2. Characteristiccurve and model of a controlleddevice.
resistance R. At the switch mode of devices, this
controlled resistance changes its value
discontinuously from 0 to RD and back.
The control of this resistance is derived for a
transistor from the binary value of either the base
current (for bipolar transistor) or the gate voltage
(for MOSFET or IGBT):
a = a D :¢ [(i > 0) A (UG ~ 0)1
where the logical expression in brackets may be
0 or 1. Similarly, for a thyristor:
a ~- a D * [(i > 0) A (i < IL) A (iG < IGT)]
and for a gate turned-off thyristor
R = RD * [(i > 0) A {(i < IL) A (iG < leT)
V (ic ~< --IGQ)}]
Neither the solving of the non-linear expressions
in eq. (1) nor the solving of the logical
expressions (3)-(5) creates any difficulties with
up-to-date computers used for simulation; the
rate of computing run is quite satisfactory. But,
the so-called problem of small time constants is
substantially more difficult. The discontinuous
changes of the device's resistance give rise to
strongly damped transient effects with extremely
small time constants or extremely high
frequency. These effects are quite insignificant
for the converter operation, but make the
mathematical solving of model equations more
U~, y
complicated. The computer program, in such a
case, automatically shortens the integration step,
and the calculation then continues in such time
intervals in an inadequately slow manner.
3.3 Switch models
The simultaneous neglecting of threshold
voltage, on-state resistance and off-state
conductances
(3)
U/TO/ = R~ = 1/Re. = 1 / R D --- 0
is an extreme simplification of the device's
model. The function of a power semiconductor
(4) device is then reduced to an ideal switching
element. The problem of small time constants is
thus removed completely: all circuit branches
with switched-off devices are deleted from the
(5) converter model. Thereby, the model of a power
semiconductor system is maximally reduced.
We can expect that the simulation with such a
simplified system model will be time saving.
This type of model will be advantageous, namely
for the simulation of combined processes, i.e.
the solving of relatively long time intervals with
a lot of commutations; see Section 2.4.
The fundamental problem of such a model is the
varying structures of the modelled circuit, caused
by the switching of semiconductor devices. As
each device switches on, it creates a new branch
in the circuit or merges two nodes into a single
one. On the other hand, by its switching-off, the
153
J. Zabek/Simulation of power semiconductor systems
original branch will be deleted from the circuit
or the original node will be split into twin nodes.
The algorithm of the solution must follow these
changes of circuit structure and adapt the
mathematical model.
4. Simulation tools
Simulation of power semiconductor systems can
be effectively used in teaching only with
software support which makes no demands of a
special programmer's technique on students and
which makes full concentration on the analysed
problem possible.
The simulation programs can be sorted into two
groups, from the standpoint of the system's
determination.
4.1 Programs processing port diagrams
A modelled system is represented by multiports
--circuit elements such as voltage or current
sources, resistors, inductors, power semi-
conductor devices, etc. The specification of
multiport types, their parameters, and their
interconnection define the modelled system.
The program then automatically searches for
partial mathematical models in its library of
models, compiles the total mathematical model,
and solves it. Power semiconductor devices
included in the model library as special circuit
elements are usually defined very precisely as
non-linear dynamic models--see Section 3.1.
The simplified static models (Section 3.2) can be
applied as well. The application possibility of
switch models with their complicated control by
voltage, current and external control signals
(Section 3.3) is unique.
The model of an electrical circuit can be stated
very easily, straight from the circuit diagram. It is
created usually by a text editor, i.e. each circuit
element is inserted as the character string
containing the name and type of the element,
the names of input and output circuit nodes, its
parameters and their values. One can imagine
154
the graphic editing of a simulated system as well:
the circuit is assembled on the screen by
dislocating separate icons representing the circuit
elements and by interconnecting them with
lines.
A port diagram can be applied for quite general
cases, where the modelled system can create
even structures not anticipated during its
operation, e.g. in breakdown or transient modes.
In such cases, the computer itself is able to
determine the structure of the circuit, i.e. the on
or off states of particular semiconductor devices.
The diagram with non-linear dynamic models of
semiconductor devices is mostly suitable for
simulation of relatively short time intervals with
a few commutations, where the circuit processes
are solved in detail, i.e. internal processes in a
power semiconductor system (Section 2.2). The
simulation run can be shortened by using the
simplified non-linear static models of devices.
This method can be used to solve even
combined processes (Section 2.4), if the program
is able to process the switch device models.
A characteristic example of a program operating
with port diagrams is SPICE (University of
California, Berkeley, CA) and other members of
its family--PSPICE, IsSPICE, ICAP, etc.
4.2 Programs processing block diagrams
A modelled system is represented by partial
mathematical models--computing blocks with
defined input/output functions. Therefore, we
can model the power semiconductor system as a
block or a system of blocks with given linear or
non-linear dependence between input variables
(feeding and controlling) and output variables
(voltage, current, etc.). The switch models of
power semiconductor devices are most
convenient for such a m e t h o d - - t h e i r operation
is modelled by means of expressions with logical
and relational operators.
The preparation of a model is more complicated
as compared with the foregoing case; partial
 Microelectronics Journal, Vol. 27, Nos 2-3
mathematical equations must be formulated.
The computer input is realized by use of text or
graphic editor, as in the previous case• Solution
with switch models :is usually very rapid and
makes it possible to simulate even very long time
intervals with a lot of commutations.
A block diagram can be used without any
difficulties only in certain special cases, i.e.
converters, where switching of semiconductor
devices creates few structures, which are
anticipated, well known, and precisely defined.
As an example, the transistor chopper may be
presented with only v¢¢o circuit structures. The
three-phase transistor ac/dc converter with pulse
width modulation represents a more
complicated system, solvable by means of a
block diagram wi~h switch models of
semiconductor devices as well• The model is
again created either b'y use of a text editor or a
graphic editor, as are port diagrams in the
foregoing case.
The MATLAB, with its extension SIMULINK
(MathWorks, Natick, MA) or PSI (Delft
University of Technology, BOZA, The
Netherlands), can be presented as characteristic
examples of this type of simulation tool.
Some simulation programs make it possible to
combine and use both methods: port diagrams
and block diagrams. The power part of a
simulated system (the converter circuit) can be
represented as the port diagram, and the control
part (controllers, etc.) as the block diagram.
From such a group of tools, can be presented, for
example, D Y N A S T (Dynast, Prague, Czech
Republic) or C A S P O C (Simulation Research,
Alphen aan den Rijn, The Netherlands).
5. Examples of simulation
The choice of the described means of simulation
is illustrated by some examples used in our
educational practice. The times of simulation
runs are presented for 486 DX2/66 MHz.
5.1 Commutation failure of the thyristor
rectifier in regenerative mode
The simulation is used for analysis of the
breakdown transient in the three-phase bridge-
connected thyristor rectifier in the mode of
regenerative braking ofa dc motor. The failure is
caused by an inadmissible increase of the firing
angle.
This problem is a characteristic example of an
internal process in a power semiconductor
system (see Section 2.2), where the modelled
system can create non-anticipated structures--
the student does not quite exactly know what
will happen• The duration of such a transient can
be expected within a few commutations. For
such reasons, the non-linear static model of a
thyristor is chosen, and the system is represented
as a port diagram (see Section 4.1) using the
program DYNAST (Dynast, Prague, Czech
Republic).
The short sample of this text-edited model
represents the thyristor bridge with ac terminals
U, V, W and real ac three-phase source E, Ls.
The equivalent circuit of the dc motor (in this
case, the generator) Ei, La, Ra is connected to
the dc terminals P, N. The macromodel of the
thyristor T H Y (not presented) corresponds with
Fig. 2 and eq. (4). The model of the firing
generator is also not presented.
E1 U - 0 = 100.SIN(100PI.TIME);
Lsl - E1 = 0.2M;
E2 V - 0 = 100*SIN(100PI.TIME + 4PI/3);
Ls2 - E2 = 0.2M;
E3 W - 0 = 100,SIN(100PI,TIME + 2PI/3);
Ls3 - E3 = 0.2M;
T1 > @THY U, G1, P; T3 > @THY V, G3, P;
T5 > @THY W, G5, P;
T2 > @THY N, G2, W; T4 > @THY N, G4,
U; T6 > @THY N, G6, V;
Ei P - N = -200; La - Ei = 2M;
Ika - Ei = 0.2;
155
J. Zabek/Simulation of power semiconductor systems

The effect of commutation failure is caused by
an increase in the firing angle after the first
successful commutation. The simulation results,
the currents of both commutation groups, are
shown in Fig. 3.
The output dc current, the input ac currents or
the thyristor voltages can be presented as well.
Such results serve as a very useful basis for
understanding and for giving a detailed analysis
of this phenomenon. The simulating run of the
whole transient with one successful, two
unsuccessful and one double commutation takes
about 130 s without any graphic interpretation.
5.2 Pulse width modulated ac/dc
The simulation is used for analysis of the PWM
voltage stiff transistor rectifier. Feedback
modulation of input phase currents with
sampling is applied. Output dc load current is
constant; the object of analysis is the transient
response of the output dc voltage on the input
current step.
This is an example of the combined process
(Section 2.4) where rapid internal processes in
the semiconductor system, i.e. its modulation,
must not be separated from the slow external
process in the load circuit--voltage changes on
the output capacitor. Then, the switch model of
power semiconductor devices is used (Section
3.3), and the system is represented by a block
diagram (Section 4.2).
Both ways of system model editing are
sampled in the next section. The content of
the short samples is the model of a three-
phase bridge converter with ac voltages UA,
UB, U C and dc voltage UD. The modulating
converter
signals AMOD, B M O D , C M O D are not
presented.
The text editing, as it is used in the program
PSI/c (Delft University of Technology, BOZA,
The Netherlands), is presented in the first
sample:

5o0- [A]
400--

300--
200--
i2 /
i4

I00
[s]
i
I ' I I ' I ' I ' I
0.002 0.004 0.006 0.008 0.01

[A]
400-~
300-~ _.iL
. _3 i51
75
[s]
' I ' I ' I ' I ' I ' I
r 0.002 0.004 0.006 0.008 0.01
Fig. 3. Commutation failure of the thyristor rectifier.

156
 Microelectronics Journal, Vol. 27, Nos 2-3
U0A = U D / 2 . A M O D ;
U0B = UD/2*BMOD;
U0C = UD/2*CMOD;
UA = (2*UOA - U0B - U0C)/3;
UB = (2*UOB - U0C - UOA)/3;
U C = (2*UOC - U0A - UOB)/3;
where logical variables AMOD, BMOD,
C M O D can be either + 1 or - 1 .
The graphic editing used in the program
SIMULINK + MATLAB (MathWorks, Natick,
MA) is presented in Fig. 4. The simulation
results, obtained by PSI/c, are presented in Fig.
5. The sinusoidal phase currents, their decrease
down to 50%, and the corresponding transient
of output dc voltage, can be analysed. The
simulation run of the whole process with about
2000 commutations takes only 12s, including
graphic interpretation on display! Such
surprising results can be achieved thanks to the
switch model of power semiconductor devices.
An identical system model can be used for
more detailed analysis of the modulation mode,
see Fig. 6. There we can study the modulation
UA
Mux
uc
U0
-UD/2
Fig. 4. Graphic editing of the three-phase bridge converter.
process within the time interval 0.3 ms:
sampling commands S/H with period 25#s,
reference sinusoidal phase current i^p,, real
phase current iA, and phase voltage u^ with its
four levels +1/3 UD, 5:2/3 UD. Other
modulation modes could be modelled and
simulated in a similar way.
Note: All data outputs for the purpose of this
presentation are post-processed by the GRAFIT
program (Optimal, Prague, Czech Republic).
6. Educational applications
Simulation tools can play a significant part in
increasing the efficiency of power systems
education. Different levels of study activity are
required for different means of applications•
(1) The presentation of prepared examples
requires the least amount of independent
activity of students. These examples can
complete lectures and demonstrate
theoretical conclusions. A high quality
presentation is necessary; graphs and their
descriptions must be well arranged, legible
and understandable. Students will only be
involved in the simulation process under
the supervision of the lecturer.
(2) Independent student work with a prepared
model assumes a higher degree of activity.
The student does not create the model, but
he will be aware of its structure. The aim of
) his work is the observation and study of
operational or extraordinary states and the
) influence of changing parameters and their
optimization, as well as an analysis of the
results. This variant is used in practice very
often.
(3) The active creation of and work with a
model is the third part of this division.
The student has to analyse a problem and
solve it using a given simulation tool. This
method entails, perhaps, the best
157
J. 2~bek/Simulation of power semiconductor systems

60-- • " ic
-

40--

20--

20-

40--
Is]
60
0.01 0.02 0.03 0.04 0.[

400- [v] liD

300--

200--

lO0--

[s]
0
. . . . I ' ' ' ' I ' ' ' ' I ' ' ' ' I ' ' ' I
0.00 0.01 0.02 0.03 0.04 0.05
Fig. 5. Control transient o f P W M voltage stiff rectifier.

[A] iA iA~
30-

20-

10-
S/H
!!!I!!!III!NI
00019 0.0020

[v] Uh
200-

100-

-I00-

-200--
0

' I
0.0019
I irI l [
0.0020

Fig. 6. M o d u l a t i o n o f ac c u r r e n t w i t h sampling•
I
l[s]
' I

158
 Microelectronics Journal, Vol. 27, Nos 2-3
comprehension of problems, but it
requires m u c h more time. T h e aim o f the
work, an analysis o f the behaviour of the
modelled system, has to follow the
creation o f the model. This variant is
suitable for exercises where students use
the knowledge o f simulation tools
repeatedly for different models or for
extensive w o r k - - term and diploma
theses.
(4) Improvement and extension o f the
simulation tools is the most exacting
application and is for specialists--
programmers in postgraduate study.
In closing this paper, it must be emphasized that
modelling is only one of many educational tools
and that it is preferable to combine it with w o r k
on real equipment whenever possible.
References
[1] J. 7.~ek, Modelling of power semiconductor
converters, Proc. Int. Seminar on Power Semiconductors
ISPS'92, Prague, 1992, pp. 178-183.
[2] K. Ktinzel and J. Z~ek, Modelling of power systems
with semiconductor converters, 4th Annual Conf.
EAEEIE Multimedia and Computer Tools: The Futurefor
Engineering, Prague, 1993, pp. 220--224.
[3] J. Zfi~ek, Simulation of power semiconductor systems
as an educational tool, 2nd Int. Seminar on Power
Semiconductors ISPS'94, Prague, 1994, pp. 187-192.
159