MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

CT75AM-12
GENERAL INVERTER • UPS USE

CT75AM-12 OUTLINE DRAWING Dimensions in mm

20MAX. 5
2

6
φ 3.2
4

26
1
2.5
2

20.6MIN.
1
1 2 3
0.5
3
5.45 5.45

4.0

wr

¡VCES ............................................................................... 600V q GATE

q
¡IC ......................................................................................... 75A w COLLECTOR
e EMITTER
¡High Speed Switching r COLLECTOR
e
¡Low VCE Saturation Voltage TO-3PL

APPLICATION
AC & DC motor controls, General purpose invert-
ers, UPS, Power supply switching, Servo controls,
etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol Parameter Conditions Ratings Unit

VCES Collector-emitter voltage VGE = 0V 600 V
VGES Gate-emitter voltage VCE = 0V ±20 V
VGEM Peak gate-emitter voltage VCE = 0V ±30 V
IC Collector current 75 A
ICM Collector current (Pulsed) 150 A
PC Maximum power dissipation 300 W
Tj Junction temperature –40 ~ +150 °C
Tstg Storage temperature –40 ~ +150 °C
— Weight Typical value 9.8 g

Feb.1999
 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

CT75AM-12

GENERAL INVERTER • UPS USE

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
V (BR) CES Collector-emitter breakdown voltage IC = 1mA, VGE = 0V 600 — — V
IGES Collector-emitter leakage current VGE = ±30V, VCE = 0V — — ±0.5 µA
ICES Gate-emitter leakage current VCE = 600V, VGE = 0V — — 1 mA
VGE(th) Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V 4.5 6.0 7.5 V
VCE(sat) Collector-emitter saturation voltage IC = 75A, VGE = 15V — 2.5 3.0 V
Cies Input capacitance — 3100 — pF
Coes Output capacitance VCE = 25V, VGE = 0V, f = 1MHz — 400 — pF
Cres Reverse transfer capacitance — 130 — pF
td (on) Turn-on delay time — 40 — ns
tr Rise time VCC = 300V, Resistance load, — 265 — ns
td (off) Turn-off delay time IC = 75A, VGE = 15V, RGE = 10Ω — 175 — ns
tf Fall time — 245 — ns
Rth (j-c) Thermal resistance Junction to case — — 0.42 °C/W

PERFORMANCE CURVES

COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL)
VGE = 20V
100 15V 10
SATURATION VOLTAGE VCE(sat) (V)

Tj = 25°C Tj = 25°C
COLLECTOR CURRENT IC (A)

12V
80 8
COLLECTOR-EMITTER

PC = 300W
60 11V 6

40 4 150A
10V

75A
20 9V 2
30A

0 0
0 2 4 6 8 10 0 4 8 12 16 20

COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V)

Feb.1999
 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR

CT75AM-12

GENERAL INVERTER • UPS USE

COLLECTOR-EMITTER SATURATION COLLECTOR CURRENT VS.

VOLTAGE CHARACTERISTICS GATE EMITTER VOLTAGE CHARACTERISTIC
(TYPICAL) (TYPICAL)
5 100
COLLECTOR-EMITTER SATURATION

VGE = 15V VCE = 10V

Tj = 25°C Tj = 25°C

COLLECTOR CURRENT IC (A)

4 80
VOLTAGE VCE (V)

3 60

2 40

1 20

0 0
0 20 40 60 80 100 0 4 8 12 16 20

COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V)

CAPACITANCE VS. SWITCHING TIME-COLLECTOR

COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC CURRENT CHARACTERISTIC
(TYPICAL) (TYPICAL)
104 103
CAPACITANCE Cies, Coes, Cres (pF)

7 7
5 Cies
3 5
SWITCHING TIME (ns)

2
3 tf
103 2
7
5 td(off)
tr
3 102
2 Coes 7
5 td(on)
102
7 Cres
5 3 Tj = 25°C
3 Tj = 25°C 2 VCC = 300V
2 VGE = 0V VGE = 15V
f = 1MHZ RG = 10Ω
101 101 0
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 10 2 3 5 7 101 2 3 5 7 102

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

TRANSIENT THERMAL
GATE-EMITTER VOLTAGE IMPEDANCE CHARACTERISTICS
VS. GATE CHARGE CHARACTERISTIC (TYPICAL)
(TYPICAL)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
20 100
GATE-EMITTER VOLTAGE VGE (V)

7
THERMAL IMPEDANCE Zth ( j – c)

5
VCE = 200V
3
16
2

300V 10–1
TRANSIENT

12 7 7
5 5
3 3
2 2
8
10–2 10–2
7 7
5 5
4
3 3
2 2

0 10–3 10–3
0 40 80 120 160 200 10–5 2 3 5 710–4 2 3 5 710–3

GATE CHARGE Qg (nc) PULSE WIDTH tw (s)

Feb.1999
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