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Tetramethylammonium hydroxide
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Tetramethylammonium hydroxide (TMAH or Tetramethylammonium hydroxide

TMAOH) is a quaternary ammonium salt with the
molecular formula (CH3)4NOH. It is used as an
anisotropic etchant of silicon. It is also used as a basic
solvent in the development of acidic photoresist in the
photolithography process. Since it is a phase transfer
catalyst, it is highly effective in stripping photoresist.
It is also used as a surfactant in the synthesis of
ferrofluid, to prevent agglomeration.
IUPAC name
Toxicity tetramethylammonium hydroxide
Identifiers
TMAH solution is a strong base. The CAS number 75-59-2
tetramethylammonium ion can damage nerves and PubChem 60966
muscles, causing difficulties in breathing and SMILES
possibly death in a short period of time after exposure C[N+](C)(C)C.[OH-]
by contact even with a small amount. It also smells Properties
like dead fish, if it is not pure, from trimethylamine Molecular formula C4H13NO
impurity. TMAH has virtually no odor when pure. Molar mass 91.15 g mol−1
Except where noted otherwise, data are given for
Wet anisotropic Etching materials in their standard state (at 25 °C, 100 kPa)
Infobox references
TMAH belongs to the family of quaternary
ammonium hydroxide (QAH) solutions and is commonly used to anisotropically etch silicon. Typical
etching temperatures are between 70°-90°C and typical concentrations are 5-25 wt% TMAH in water.
(100) silicon etch rates generally increase with temperature and decrease with increasing TMAH
concentration. Etched silicon (100) surface roughness decreases with increasing TMAH concentration,
and smooth surfaces can be obtained with 20% TMAH solutions. Etch rates are typically in the 0.1-1
micron per minute range. [1]

Common masking materials for long etches in TMAH include silicon dioxide (LPCVD and thermal) and
silicon nitride. Silicon nitride has a negligible etch rate in TMAH; the etch rate for silicon dioxide in
TMAH varies with the quality of the film, but is generally on the order of 0.1 nm/minute.

References
1. ^ J. T. L. Thong, W. K. Choi, C. W. Chong, TMAH etching of silicon and the interaction of
etching parameters, Sensors and Actuators A: Physical, Volume 63, Issue 3, December 1997,
Pages 243-249, ISSN 0924-4247, DOI: 10.1016/S0924-4247(97)80511-0.
(http://www.sciencedirect.com/science/article/B6THG-3S9D11W-
3V/2/46a49827456cb9320e8b0173ba32b1bf)

http://en.wikipedia.org/wiki/TMAH 9/13/2009
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