POWER ELECTRONICS

(ECEN405)

SYNCHRONOUS BUCK CONVERTER

LAB-2

SUBMITTED BY

S.MD.JAFAR SADIQ

300530470

AIM:
1) Design and build a synchronous buck converter
2) Observe the behavior of the buck converter
3) Look at efficiency of the buck converter

COMPONENTS USED:
Diode - UG1B
MOSFET - IRFBC40A
Resistors - 1KΩ, 8.2 kΩ, 10 KΩ
Inductor - 4mH
Capacitors - 0.47µF, 4.7µF, 10µF
Gate driver - IR21834
Load - 100Ω (20W)
Breadboard

CIRCUIT DIAGRAM

DELIVERABLES:

1) Design a continuous conduction mode buck converter output filter, to meet the specs shown below.
Filter inductance:

V O (1−D)
L=
F S∗Δ I L
v o 20
Where, Duty Cycle, D= = =0.667
v i 30

Δ I L=I∗ (Current ripple )

VO 20
= ∗¿0.4 = ∗0.4=0.08 A
R 100
Substituting the above values for L,

20(1−0.667)
L=
22∗103∗0.08
L=3.78 mH ≅ 4 mH
Filter Capacitance:

L I 2L max
C= 2
( V O + ΔV O ) −V O2
Where ,

ΔIL 0.08
Duty Cycle, I .L max = I L + =0.2+ =0.24
2 2
ΔV O =V O∗( Voltage ripple )

= 20∗¿0.05 ¿ 1V

Substituting the above values for C,

3.78∗10−3∗( 0.24)2
C=
( 20+ 1 )2−202
C=5.31 µF≅ 4.7 µF
∴ Filter components are L= 4mH, C= 4.7 µF

2) Use the gate driver datasheet to calculate the value of a dead time resistor that will give
Approximately a 0.5 microsecond dead time.

Resistor value can be found out from adjacent figure

Dead time = 5µs

RD =10 KΩ
3) Oscilloscope screen showing the waveform on the source of the MOSFET. Give a brief description of the
waveform

DC pulses of different duty cycle according to the

output required can be observed at the Source
terminal of MOSFET. We can see a big voltage
spike at the rising edge of the pulses. This is
because of the effect of fast current transients on
the parasitic inductor and capacitors present in
circuit

4) Create a graph showing the Efficiency vs output

current of the converter. Comment on the main
losses.

The following observations have been recorded while performing the laboratory exercise

Duty Cycle Vin Iin Pin Vou Rout I out Pout Eff
(%) (v) (A) (W) t(V) (Ω) (A) (W) (%)
10 30 0.00348 0.1044 2.78 99.6 0.027912 0.077594 74.32412
15 30 0.0071 0.213 4.14 99.6 0.041566 0.172084 80.79077
20 30 0.0122 0.366 5.56 99.6 0.055823 0.310378 84.8026
25 30 0.01877 0.5631 6.98 99.6 0.07008 0.489161 86.86923
30 30 0.0268 0.804 8.42 99.6 0.084538 0.711811 88.53374
35 30 0.03625 1.0875 9.86 99.6 0.098996 0.9761 89.75636
40 30 0.04709 1.4127 11.29 99.6 0.113353 1.27976 90.58965
45 30 0.05934 1.7802 12.73 99.6 0.127811 1.627037 91.39631
50 30 0.073 2.19 14.17 99.6 0.142269 2.015953 92.05264
55 30 0.088 2.64 15.6 99.6 0.156627 2.443373 92.55203
60 30 0.1045 3.135 17.04 99.6 0.171084 2.915277 92.9913
65 30 0.1222 3.666 18.46 99.6 0.185341 3.421402 93.32792
70 30 0.1414 4.242 19.89 99.6 0.199699 3.972009 93.63529
75 30 0.162 4.86 21.32 99.6 0.214056 4.563679 93.90285
80 30 0.1841 5.523 22.75 99.6 0.228414 5.196411 94.08674
Main losses can be observed in the MOSFETS in the form of Switching losses and conduction losses.

5) Describe the function of a bootstrap circuit.

A bootstrap circuit is needed when a Nch MOSFET is used for the high-side transistor of the output
switch. Turning Nch MOSFET completely on as a high-side switch requires a high enough V GS, that is, a voltage
higher than the drain voltage. Normally, because the drain voltage is V in (input voltage), representing the
highest voltage in the circuit, any higher voltage must be supplied externally. To generate that high voltage, a
bootstrap circuit is used. A bootstrap circuit is a step-up charge pump composed of a switch, a capacitor, and a
diode, where a voltage equal to the switch voltage (Vin) plus the internal supply voltage is used as the gate
drive for the high-side Nch MOSFET.