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Midterm PDF
Solutions
Question
1
VS=5.0V,
RL1=15.0Ω,
RL2=19.0Ω,
RW1=3.0Ω,
RW2=3.0Ω.
view
eL1
as
a
voltage
divider
between
rw1
and
RL1||(rw2+RL2)
!!!||(!"#!!!!)
eL1
=
VS
*
!"#! !!!||(!"#!!!!)
=
3.74
V
!!!
eL2
=
eL1*!!!!!"#
=
3.23
V
Recall
that
P
=
v2/R
where
V
is
the
voltage
across
the
resistor
of
interest
PRW1
=
(VS
–
eL1)2/RL1
=
0.527
W
PRL1
=
eL12/RL1
=
0.933
W
2
PRW2
=
(eL1
–eL2) /RL2
=
0.0867
W
PRL2
=
eL22/RL2
=
0.549
W
by
conservation
of
energy.
The
total
power
consumed
by
the
rest
of
the
circuit
is
supplied
by
the
voltage
source.
So
Power
dissipated
by
the
voltage
source
is
negative
of
the
sum
of
the
powers
we
just
calculated.
PVS
=
-‐2.098
W
Question
2
The
voltage
across
the
load
is
measured
to
be
v=10
V
when
the
current
through
the
load
is
measured
to
be
i=22
A.
The
load
is
then
changed
and
the
voltage
across
the
new
load
is
measured
to
be
v=22
V
when
the
current
through
the
load
is
measured
to
be
i=17
A.
Note
that
we
can
replace
the
black
box
by
a
thevenin
equivalent
circuit
with
a
voltage
source
and
a
resistor.
So
with
a
resistive
load,
i=(VTH−v)/RTH.
In
the
first
case,
i1=(VTH−v1)/RTH.
Rearrange
to
get
RTH=(VTH−v1)/i1
In
the
second
case,
i2=(VTH−v2)/RTH.
Rearrange
to
get
RTH=(VTH−v2)/i2
So
(VTH−v1)/i1
=
(VTH−v2)/i2
=
RTH
Solve
for
VTH
in
the
equation
(VTH−v1)/i1
=
(VTH−v2)/i2
VTH
=
(i1v2
-‐
i2v1)/(i1
–
i2)=
62.8
V
For
the
short
circuit,
ISC
=
VTH/RTH.
Recall
that
RTH=(VTH−v1)/i1
=
2.4
Ω
ISC
=
i1VTH/(VTH−v1)
=
26.17
A
Open
circuit
voltage
is
VTH
=
62.8
V
Question
3
The
MOSFET's
parameters
are:
VT=0.9V
and
K=0.018A/v2.
The
resistance
of
the
load
resistor
RL=100Ω.
Part
1
VGS
=
VG
–
VIN
To
stay
out
of
cut
off
region,
VGS
>
VT
VG
–
VIN
>
VT
VG
>
VIN
+
VT
VIN
swings
between
1V
and
-‐2V.
Therefore,
VG
>
1
+
0.9
and
VG
>
-‐2
+
0.9
VG
>
1.9
and
VG
>
-‐1.1
VG
>
1.9
is
the
more
constraining
condition.
So,
To
keep
the
MOSFET
in
cutoff,
minimum
value
if
VG
is
1.9V
Part
2
Assume
VG=3.0V
VOUT
=
VDS
+
VIN
Take
KCL
at
output
node
VOUT
=
VDD
–
IDSRL
substitute
value
for
VOUT
VDS
+
VIN
=
VDD
–
IDS
RL
VDS
=
VDD
–
IDSRL
–
VIN
in
saturation,
VDS
≥
VGS
–
VT
VDS
≥
VG
–
VIN
–
VT
substitute
value
for
VDS
in
previous
equation
VDD
–
IDSRL
–
VIN
≥
VG
–
VIN
–
VT.
Cancel
VIN
on
both
sides
VDD
≥
VG
+
IDSRL
–
VT
in
saturation,
IDS
=
K/2(VGS
-‐
VT)2
=
K/2(VG
–
VIN
-‐
VT)2
.
After
substituting,
VDD
≥
VG
+
K/2(VG
-‐
VIN
-‐
VT)2RL
–
VT
Since
The
expression
on
the
left
has
a
maximum
value
when
VIN
is
the
lowest
possible
value,
we
pick
VIN
=
-‐2V
and
substitute
the
other
values
to
get
VDD
≥ 17.99V
Part
3
Choose
the
operating
point
where
the
input
bias
voltage
VIN=0
iDS
=
K/2(vGS
-‐
VT)2
VGS
=
VG
–
VIN.
Since
VIN
=
0,
VGS
=
VG
Remember
that
ids
=
vgs*𝜕iDS
/ 𝜕vGS|vGS=VG
𝜕iDS
/ 𝜕vGS|vGS=VG
=
K(VG
-‐
VT)
ids
=
K(VG
-‐
VT)vgs
gm
=
K(VG
–
VT)
=
0.0378
Part
4
small
signal
model
vgs
=
-‐vin
vout
=
-‐idsRL
=
-‐(-‐vinRLK(VG
-‐
VT))
=
vinRLK(VG
-‐
VT)
vout/vin
=
RLK(VG
-‐
VT)
=
3.78
Part
5
vin/iin
=
vin/-‐ids
=
vin/-‐K(VG
-‐
VT)vgs
recall
that
vgs
=
-‐vin
vin/iin
=
vin/Kvin(VG
-‐
VT)
=
1/K(VG
–
VT)
=
26.46
Ω
Question
4
Part
1
By
Inspection
C
=
A
+
B
=
A
+
B
And
the
only
diagram
2
is
not
implemented
by
the
circuit
Part
2
VS=4V,
VOH=3.52V,
VIH=2.08V,
VIL=1.92V,
VOL=1.12V.
Low-‐level
noise
margin
=
VIL
–
VOL
=
0.8V
Part
3
High-‐level
noise
margin
=
VOH
–
VIH
=
1.44
V
Part
4
Forbidden
region
=
VIH
–
VIL
=
0.16
V
Part
5
Assume
that
RON=5.0kΩ
for
our
MOSFETS
We
have
a
voltage
divider
at
the
output
and
we
want
RPU
such
that
the
maximum
output
of
this
divider
is
VOL.
VOL
=
VSRON/(RPU
+
RON)
RPU
+
RON
=
VSRON/VOL
RPU
=
VSRON/VOL
–
RON
=
12.857
kΩ
Part
6
Let's
choose
RPU=14.0kΩ
Remember
that
P
=
v2/R
In
order
to
find
maximum
power.
We
consider
all
possible
values
of
inputs
and
pick
the
one
that
leads
to
highest
power
consumption
when
A
=
0,
B
=
0
P
=
VS2/(RPU
+
RON)
when
A
=
0,
B
=
1
2
P
=
VS /(RPU
+
½(RON))
when
A
=
1,
B
=
0
P
=
2VS2/(RPU
+
RON)
when
A
=
1,
B
=
1
2
P
=
2VS /(RPU
+
RON)
We
can
see
that
we
get
maximum
in
the
last
two
cases.
Maximum
power
=
2VS2/(RPU
+
RON)
=
1.684
mW
Part
7
At
the
rising
edge,
the
MOSFET
preceding
that
stage
is
in
off
state.
So
the
capacitor
only
sees
a
resistance
of
RPU.
τrise
=
RPUCGS
=
7
*
10-‐10
S
=
0.7
ns
Part
8
At
the
falling
edge,
the
MOSFET
is
in
on
state.
So
the
capacitor
sees
a
resistance
of
RPU||RON
τfall
=
(RPU||RON)CGS
=
CGSRPURON/(RPU
+
RON)
=
1.842
*
10-‐10
s=
0.1842
ns
Question
5
The
resistors
both
have
the
resistance
R=8.2kΩ.
The
voltage
of
the
DC
sources
is
V1=2.25V
and
V2=2.5V.
The
peak
voltage
of
this
waveform
is
8V.
Part
1
D1
and
D2
will
clip
the
voltage.
So,
the
voltage
at
the
"input"
of
D1
cannot
be
higher
than
V
1,
and
the
voltage
at
the
“output”
of
D2
cannot
be
lower
than
v2.
Therefore,
the
maximum
positive
voltage
that
can
appear
at
v
is
2.25
Part
2
Similarly,
the
maximum
negative
voltage
that
can
appear
at
v
is
-‐2.5V.
Part
3
Maximum
current
through
D1:
When
the
AC
voltage
source
is
at
+8V
and
v
=
2.25V.
Current
through
D1
is
the
current
from
the
AC
source
minus
the
current
going
through
resistor
R:
(V
S
–
v)
/
R
–
v/R
=0.00043.
Part
4
Maximum
current
through
D2:
v
=
-‐2.5
and
AC
voltage
source
is
at
-‐8V.
Current
through
D2
plus
current
through
the
resistor
R
is
the
current
flowing
into
the
AC
source.
Thus,
current
through
D
2
is
current
through
the
AC
source
minus
current
through
the
resistor
R:
(v
–
Vs
)
/
R
+
v/R
=
0.00037.