(Standard type) TESTING VDE (Reinforced type)

GU (General Use)-E Type PhotoMOS

[1-Channel (Form B) Type]
RELAYS

, , 4. Low-level off state leakage current


,
8.8±0.05 6.4±0.05 Cross section of the normally-closed type of
.346±.002 .252±.002 The SSR has an off state leakage current
power MOS
3.9±0.2
of several milliamperes, whereas the Pho-

,

.154±.008 Passivation membrane
Intermediate
Source electrode Gate electrode
insulating toMOS relay has only 100 pA even with
8.8±0.05 6.4±0.05 membrane
.346±.002 .252±.002 the rated load voltage of 400 V
Gate
3.6±0.2 oxidation (AQV414E).

 



  1
2
6

5
.142±.008

mm inch
N+
P+
N+

N–

N+

2. Controls low-level analog signals

N+
P+
N+
membrane

Drain
electrode
5. Reinforced insulation 5,000 V type
also available.
More than 0.4 mm internal insulation dis-
tance between inputs and outputs. Con-
forms to EN41003, EN60950 (reinforced
insulation).
3 4 PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
FEATURES distortion.
1. Low on resistance for normally- 3. High sensitivity, low ON resistance
closed type Can control a maximum 0.13 A load cur-
This has been realized thanks to the built- rent with a 5 mA input current. Low ON re- TYPICAL APPLICATIONS
in MOSFET processed by our proprietary sistance of 18 Ω (AQV410EH). Stable • Security equipment
method, DSD (Double-diffused and Se- operation because there are no metallic • Telepone equipment (Dial pulse)
lective Doping) method. contact parts. • Measuring equipment

TYPES
Part No.
Output rating* Through hole Packing quantity
Surface-mount terminal
I/O isolation terminal
Type
voltage Tape and reel packing style
Load Load
Tube packing style Picked from the Picked from the Tube Tape and reel
voltage current
1/2/3-pin side 4/5/6-pin side
1,500 V AC 1 tube contains
400 V 120 mA AQV414E AQV414EA AQV414EAX AQV414EAZ
AC/DC (Standard) 50 pcs.
1,000 pcs.
type 5,000 V AC 350 V 130 mA AQV410EH AQV410EHA AQV410EHAX AQV410EHAZ 1 batch contains
(Reinforced) 400 V 120 mA AQV414EH AQV414EHA AQV414EHAX AQV414EHAZ 500 pcs.
*Indicate the peak AC and DC values.
Note: For space reasons, the package type indicator "X" and "Z" are omitted from the seal.

RATING
1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)
Type of
Item Symbol AQV414E(A) AQV410EH(A) AQV414EH(A) Remarks
connection
LED forward current IF 50 mA
LED reverse voltage VR 3V
Input
Peak forwrd current IFP 1A f = 100 Hz, Duty factor = 0.1%
Power dissipation Pin 75 mW
Load voltage (peak AC) VL 400 V 350 V 400 V
A 0.12 A 0.13 A 0.12 A
A connection: Peak AC, DC
Continuous load current IL B 0.13 A 0.15 A 0.13 A
B,C connection: DC
Output C 0.15 A 0.17 A 0.15 A
A connection: 100 ms (1 shot),
Peak load current Ipeak 0.3 A 0.4 A 0.3 A
VL = DC
Power dissipation Pout 500 mW
Total power dissipation PT 550 mW
I/O isolation voltage Viso 1,500 V AC 5,000 V AC 5,000 V AC
Non-condensing at low
Temperature Operating Topr –40°C to +85°C –40°F to +185°F
temperatures
limits
Storage Tstg –40°C to +100°C –40°F to +212°F

125
AQV414E, AQV41❍EH
2. Electrical characteristics (Ambient temperature: 25°C 77°F)
Type of
Item Symbol connec- AQV414E(A) AQV410EH(A) AQV414EH(A) Condition
tion
Typical 1.45 mA 1.9 mA 1.75 mA
LED operate (OFF) current IFoff — IL= Max.
Maximum 3.0 mA
Minimum 0.3 mA 0.4 mA 0.3 mA
Input LED reverse (ON) current IFon — IL= Max.
Typical 1.40 mA 1.8 mA 1.70 mA
Typical 1.14 V (1.25 V at IF= 50 mA)
LED dropout voltage VF — IF= 5 mA
Maximum 1.5 V
Typical 26 Ω 18 Ω 25.2 Ω IF = 0 mA
Ron A IL= Max.
Maximum 50 Ω 35 Ω 50 Ω Within 1 s on time
Typical 20 Ω 13 Ω 19 Ω IF= 0 mA
On resistance Ron B IL= Max.
Maximum 25 Ω 17.5 Ω 25 Ω Within 1 s on time
Output
Typical 10 Ω 6.5 Ω 10 Ω IF= 0 mA
Ron C IL= Max.
Maximum 12.5 Ω 8.8 Ω 12.5 Ω Within 1 s on time
IF= 5 mA
Off state leakage current Maximum ILeak — 1 µA 10 µA 10 µA
VL = Max.
Operate Typical 0.7 ms 1.5 ms 1.3 ms IF = 0 mA ➝ 5 mA
Toff —
Switching (OFF) time* Maximum 2.0 ms 3.0 ms 3.0 ms IL = Max.
speed Reverse Typical 0.1 ms 0.3 ms 0.3 ms IF= 5 mA ➝ 0 mA
Ton —
Transfer (ON) time* Maximum 1.0 ms 1.5 ms 1.5 ms IL = Max.
characteristics Typical 0.8 pF 0.8 pF 0.8 pF f = 1 MHz
I/O capacitance Ciso —
Maximum 1.5 pF VB = 0
Initial I/O isolation
Minimum Riso — 1,000 MΩ 500 V DC
resistance
Note: Recommendable LED forward current For type of connection, see Page 32.
Standard type IF = 5 mA
Reinforced type IF = 5 to 10 mA
*Operate/Reverse time

Input

Output
10%

90%
Toff Ton

■ For Dimensions, see Page 27.

■ For Schematic and Wiring Diagrams, see Page 32.
■ For Cautions for Use, see Page 36.

REFERENCE DATA
1. Load current vs. ambient temperature char- 2. On resistance vs. ambient temperature char- 3. Operate (OFF) time vs. ambient temperature
acteristics acteristics characteristics
Allowable ambient temperature: –40°C to +85°C Measured portion: between terminals 4 and 6; LED current: 5mA; Load voltage: Max. (DC);
–40°F to +185°F LED current: 0 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC)
Type of connection: A Continuous load current: Max. (DC)
140 50 5.0
AQV410EH

120
Operate (OFF) time, ms

AQV414E(H) 40 4.0
Load current, mA

On resistance, Ω

100

30 3.0 AQV410EH
80 AQV414(EH)
AQV414EH

60 20 2.0

40 AQV410EH
10 1.0
20
AQV414E
0 0 0
–40 –20 0 20 40 60 80 85 100 –40 –20 0 20 40 60 8085 –40 –20 0 20 40 60 80 85
Ambient temperature, °C Ambient temperature, °C Ambient temperature, °C

126
 AQV414E, AQV41❍EH
4. Reverse (ON) time vs. ambient temperature 5. LED operate (OFF) current vs. ambient tem- 6. LED reverse (ON) current vs. ambient tem-
characteristics perature characteristics perature characteristics
LED current: 5 mA; Load voltage: Max. (DC); Load voltage: Max. (DC); Load voltage: Max. (DC);
Continuous load current: Max. (DC) Continuous load current: Max. (DC) Continuous load current: Max. (DC)
0.8 5 5

LED operate (OFF) curremt, mA

LED reverse (ON) current, mA

Reverse (ON) time, ms

4 4
0.6
AQV410EH
AQV414EH AQV410EH
AQV410EH 3 3
AQV414EH AQV414EH
0.4
2 2

0.2 AQV414E AQV414E

1 1
AQV414E

0 0 0
–40 –20 0 20 40 60 80 85 –40 –20 0 20 40 60 8085 –40 –20 0 20 40 60 80 85
Ambient temperature, °C Ambient temperature, °C Ambient temperature, °C

7. LED dropout voltage vs. ambient tempera- 8. Voltage vs. current characteristics of output 9. Off state leakage current
ture characteristics at MOS portion Measured portion: between terminals 4 and 6;
LED current: 5 to 50 mA Measured portion: between terminals 4 and 6; LED current: 5 mA; Ambient temperature: 25°C 77°F
Ambient temperature: 25°C 77°F
1.5 140
120 AQV410EH
10 –3

Current, mA

Off state leakage current, A

100
LED dropout voltage, V

1.4 AQV414EH
80
60
1.3 AQV414E
40 10 –6
20
–3 –2.5 –2 –1.5 –1 –0.5
1.2
50mA 0.5 1 1.5 2 2.5 3
–20
30mA Voltage, V
1.1 20mA –40 10 –9
10mA –60
5mA –80
1.0 –100
–120 10 –12
0 –140
–40 –20 0 20 40 60 80 85 0 20 40 60 80 100
Ambient temperature, °C Load voltage, V

10. LED forward current vs. operate (OFF) time 11. LED forward current vs. reverse (ON) time 12. Applied voltage vs. output capacitance
characteristics characteristics characteristics
Measured portion: between terminals 4 and 6; Measured portion: between terminals 4 and 6; Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current: Load voltage: Max. (DC); Continuous load current: Frequency: 1 MHz;
Max. (DC); Ambient temperature: 25°C 77°F Max. (DC); Ambient temperature: 25°C 77°F Ambient temperature: 25°C 77°F
10.0 0.5 120
Output capacitance, pF

AQV414EH 100
Operate (OFF) time, ms

8.0 0.4
Reverse (ON) time, ms

AQV410EH
AQV414EH 80
6.0 0.3 AQV410EH

60
4.0 0.2
AQV414E 40

2.0 0.1
20

AQV414E
0 0 0
10 20 30 40 50 0 10 20 30 40 50 60 10 20 30 40 50
LED forward current, mA LED forward current, mA Applied voltage, V

5/7/2001 All Rights Reserved, © Copyright Matsushita Electric Works, 127

Ltd.
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