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K9G8G08U0B FLASH MEMORY
K9G8G08X0B
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
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Document Title
1G x 8 Bit NAND Flash Memory
Revision History
Revision No History Draft Date Remark
1.0 1. Min. value of Valid Block is changed. (3,996 -> 4,036) May 27th, 2008 Final
2. 4bit/512byte ECC -> 4bit/528byte ECC
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
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FEATURES
• Voltage Supply • Fast Write Cycle Time
- 2.7V Device(K9G8G08B0B) : 2.5V ~ 2.9V - Program time : 800µs(Typ.)
- 3.3V Device(K9G8G08U0B) : 2.7V ~ 3.6V - Block Erase Time : 1.5ms(Typ.)
• Organization • Command/Address/Data Multiplexed I/O Port
- Memory Cell Array : (1G + 32M) x 8bit • Hardware Data Protection
- Data Register : (2K + 64) x8bit - Program/Erase Lockout During Power Transitions
• Automatic Program and Erase • Reliable CMOS Floating-Gate Technology
- Page Program : (2K + 64)Byte - Endurance : TBD Program/Erase Cycles(with 4bit/528byte ECC)
- Block Erase : (256K + 8K)Byte - Data Retention : TBD Years
• Page Read Operation • Command Register Operation
- Page Size : (2K + 64)Byte • Unique ID for Copyright Protection
- Random Read : 60µs(Max.) • Package :
- Serial Access : 25ns(Min.) - K9G8G08U0B-PCB0/PIB0 : Pb-FREE PACKAGE
• Memory Cell : 2bit / Memory Cell 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9G8G08B0B-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
GENERAL DESCRIPTION
Offered in 1Gx8bit, the K9G8G08X0B is a 8G-bit NAND Flash Memory with spare 256M-bit. The device is offered in 2.7V and 3.3V
Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be per-
formed in typical 800µs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block.
Data in the data register can be read out at 25ns cycle time per byte. The I/O pins serve as the ports for address and data input/out-
put as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition,
where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the
K9G8G08X0B′s extended reliability of TBD program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-
out algorithm. The K9G8G08X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and
other portable applications requiring non-volatility.
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PIN CONFIGURATION (TSOP1)
K9G8G08X0B-PCB0/PIB0
N.C 1 48 N.C
N.C 2 47 N.C
N.C 3 46 N.C
N.C 4 45 N.C
N.C 5 44 I/O7
N.C 6 43 I/O6
R/B 7 42 I/O5
RE 8 41 I/O4
CE 9 40 N.C
N.C 10 39 N.C
N.C 11 48-pin TSOP1 38 N.C
Vcc 12 37 Vcc
Vss 13 Standard Type 36 Vss
N.C 14 35 N.C
N.C 15 12mm x 20mm 34 N.C
CLE 16 33 N.C
ALE 17 32 I/O3
WE 18 31 I/O2
WP 19 30 I/O1
N.C 20 29 I/O0
N.C 21 28 N.C
N.C 22 27 N.C
N.C 23 26 N.C
N.C 24 25 N.C
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
MAX
20.00±0.20
0.004
0.10
0.787±0.008
+0.07
0.20 -0.03
#1 #48
( 0.25 )
0.010
+0.003
0.008-0.001
+0.07
0.16 -0.03
0.488 MAX
12.00
0.472
12.40
0.0197
0.50
#24 #25
1.00±0.05 0.05
0.039±0.002 0.002 MIN
1.20
0.010 TYP
18.40±0.10 0.047MAX
+0.075
0.125 0.035
+0.003
0.005-0.001
0.724±0.004
0.25
0~8°
0.45~0.75
0.018~0.030 ( 0.50 )
0.020
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PIN DESCRIPTION
Pin Name Pin Function
DATA INPUTS/OUTPUTS
I/O0 ~ I/O7 The I/O pins are used to input command, address and data, and to output data during read operations. The I/
O pins float to high-z when the chip is deselected or when the outputs are disabled.
CHIP ENABLE
The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and
CE
the device does not return to standby mode in program or erase operation. Regarding CE control during
read operation, refer to ’Page read’ section of Device operation.
READ ENABLE
RE The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid
tREA after the falling edge of RE which also increments the internal column address counter by one.
WRITE ENABLE
WE The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of
the WE pulse.
WRITE PROTECT
WP The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage
generator is reset when the WP pin is active low.
READY/BUSY OUTPUT
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or
R/B
random read operation is in process and returns to high state upon completion. It is an open drain output and
does not float to high-z condition when the chip is deselected or when outputs are disabled.
POWER
Vcc
VCC is the power supply for device.
Vss GROUND
NO CONNECTION
N.C
Lead is not internally connected.
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs.
Do not leave VCC or VSS disconnected.
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Figure 1-1. K9G8G08X0B Functional Block Diagram
VCC
VSS
Y-Gating
Command
Command
Register
I/O Buffers & Latches VCC
VSS
CE Control Logic
RE & High Voltage I/0 0
WE Generator Global Buffers Output
Driver
I/0 7
CLE ALE WP
I/O 0 ~ I/O 7
Page Register
2K Bytes 64 Bytes
3rd Cycle A12 A13 A14 A15 A16 A17 A18 A19 Row Address
4th Cycle A20 A21 A22 A23 A24 A25 A26 A27 Row Address
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Product Introduction
The K9G8G08X0B is a 8,448Mbit(8,858,370,048 bit) memory organized as 524,288 rows(pages) by 2,112x8 columns. Spare 64 col-
umns are located from column address of 2,048~2,111. A 2,112-byte data register is connected to memory cell arrays for accommo-
dating data transfer between the I/O buffers and memory cells during page read and page program operations. The memory array is
made up of 32 cells that are serially connected to form a NAND structure. Each of the 32 cells resides in a different page. A block
consists of two NAND structured strings. A NAND structure consists of 32 cells. A cell has 2-bit data. Total 1,081,344 NAND cells
reside in a block. The program and read operations are executed on a page basis, while the erase operation is executed on a block
basis. The memory array consists of 4,096 separately erasable 256K-byte blocks. It indicates that the bit by bit erase operation is pro-
hibited on the K9G8G08X0B.
The K9G8G08X0B has addresses multiplexed into 8 I/Os. This scheme dramatically reduces pin counts and allows system upgrades
to future densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by
bringing WE to low while CE is low. Those are latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch
Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some commands require one bus cycle. For
example, Reset Command, Status Read Command, etc require just one cycle bus. Some other commands, like page read and block
erase and page program, require two cycles: one cycle for setup and the other cycle for execution. The 1G-byte physical space
requires 31 addresses, thereby requiring five cycles for addressing : 2 cycles of column address, 3 cycles of row address, in that
order. Page Read and Page Program need the same five address cycles following the required command input. In Block Erase oper-
ation, however, only three row address cycles are used. Device operations are selected by writing specific commands into the com-
mand register. Table 1 defines the specific commands of the K9G8G08X0B.
Caution : Any undefined command inputs are prohibited except for above command set of Table 1.
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VALID BLOCK
Parameter Symbol Min Typ. Max Unit
K9G8G08X0B NVB 4,036 - 4,096 Blocks
NOTE :
1. The device may include initial invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is
presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or pro-
gram factory-marked bad blocks. Refer to the attached technical notes for appropriate management of initial invalid blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block at the time of shipment.
3. The number of valid blocks is on the basis of single plane operations, and this may be decreased with two plane operations.
AC TEST CONDITION
(K9G8G08X0B-XCB0 :TA=0 to 70°C, K9G8G08X0B-XIB0:TA=-40 to 85°C,
K9G8G08B0B: Vcc=2.5V~2.9V, K9G8G08U0B: Vcc=2.7V~3.6V unless otherwise)
Parameter K9G8G08B0B K9G8G08U0B
Input Pulse Levels 0V to Vcc 0V to Vcc
Input Rise and Fall Times 5ns 5ns
Input and Output Timing Levels Vcc/2 Vcc/2
Output Load 1 TTL GATE and CL=30pF 1 TTL GATE and CL=50pF
MODE SELECTION
CLE ALE CE WE RE WP Mode
H L L H X Command Input
Read Mode
L H L H X Address Input(5clock)
H L L H H Command Input
Write Mode
L H L H H Address Input(5clock)
L L L H H Data Input
L L L H X Data Output
X X X X H X During Read(Busy)
X X X X X H During Program(Busy)
X X X X X H During Erase(Busy)
X X (1) X X X L Write Protect
X X H X X 0V/V CC(2) Stand-by
NOTE : 1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
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NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5µs.
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NAND Flash Technical Notes
Initial Invalid Block(s)
Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by Samsung.
The information regarding the initial invalid block(s) is called the initial invalid block information. Devices with initial invalid block(s)
have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An initial invalid block(s)
does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select tran-
sistor. The system design must be able to mask out the initial invalid block(s) via address mapping. The 1st block, which is placed on
00h block address, is guaranteed to be a valid block at the time of shipment.
Start
No
Last Block ?
Yes
End
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NAND Flash Technical Notes (Continued)
Error in write or read operation
Within its life time, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual
data. Block replacement should be done upon erase or program error.
Write 80h
Write Address
Write Data
Write 10h
I/O 6 = 1 ? No
or R/B = 1 ?
Yes
* No
Program Error I/O 0 = 0 ?
Yes
Program Completed
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NAND Flash Technical Notes (Continued)
Start Start
ECC Generation
I/O 6 = 1 ? No
or R/B = 1 ?
No
Yes Reclaim the Error Verify ECC
* No
Erase Error I/O 0 = 0 ? Yes
Erase Completed
Block Replacement
Block A
1st
{
∼
(n-1)th 1
nth an error occurs.
(page) Buffer memory of the controller.
Block B
1st
{ 2
∼
(n-1)th
nth
(page)
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’)
* Step3
Then, copy the nth page data of the Block ’A’ in the buffer memory to the nth page of the Block ’B’.
* Step4
Do not erase or program Block ’A’ by creating an ’invalid block’ table or other appropriate scheme.
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NAND Flash Technical Notes (Continued)
Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most sig-
nificant bit) pages of the block. Random page address programming is prohibited. In this case, the definition of LSB page is the LSB
among the pages to be programmed. Therefore, LSB doesn't need to be page 0.
: :
From the LSB page to MSB page Ex.) Random page program (Prohibition)
DATA IN: Data (1) Data (128) DATA IN: Data (1) Data (128)
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System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2,112byte
data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or
audio applications which use slow cycle time on the order of µ-seconds, de-activating CE during the data-loading and serial access
would provide significant savings in power consumption.
CLE
CE don’t-care
CE
≈
WE
ALE
tREA
tWP RE
WE
I/O0~7 out
CLE
CE don’t-care
CE
≈
RE
ALE
R/B tR
WE
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NOTE
CLE
tCLS tCLH
tCS tCH
CE
tWP
WE
tALS tALH
ALE
tDS tDH
I/Ox Command
ALE
tDH tDH tDH tDH tDH
tDS tDS tDS tDS tDS
I/Ox Col. Add1 Col. Add2 Row Add1 Row Add2 Row Add3
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Input Data Latch Cycle
tCLH
CLE
≈
tCH
CE
≈
tWC
tALS
ALE
≈
tWP tWP tWP
≈
WE
tWH
tDH tDH tDH
tDS tDS tDS
≈
I/Ox DIN 0 DIN 1 DIN final
≈
CE tRC
≈
tCHZ(1)
tREH
tREA tREA tREA tCOH
≈
RE
tRHZ(1) tRHZ(1)
tRHOH(2)
I/Ox Dout Dout Dout
≈
tRR
≈
R/B
NOTES
1. Transition is measured at ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
2. tRLOH is valid when frequency is higher than 20MHz.
tRHOH starts to be valid when frequency is lower than 20MHz.
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CE
≈
tRC tCHZ(1)
tRP tREH tCOH
≈
RE
tRHZ(1)
tREA tREA
t RLOH(2) tRHOH
tCEA
≈
I/Ox Dout Dout
≈
tRR
≈
R/B
NOTES
1. Transition is measured at ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
2. tRLOH is valid when frequency is higher than 20MHz.
tRHOH starts to be valid when frequency is lower than 20MHz.
tCLR
CLE
tCLS
tCLH
tCS
CE
tCH
tWP
WE
tCEA tCHZ
tWHR tCOH
RE
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Read Operation
tCLR
CLE
CE
tWC
WE tCSD
tWB
tAR
ALE
tRHZ
tR tRC
RE
≈
tRR
≈ ≈
I/Ox 00h Col. Add1 Col. Add2 Row Add1 Row Add2 Row Add3 30h Dout N Dout N+1 Dout M
R/B Busy
CLE
CE
tCSD
WE
tWB tCHZ
tAR
tCOH
ALE
tR tRC
RE
tRR
I/Ox 00h Col. Add1 Col. Add2 Row Add1 Row Add2 Row Add3 30h Dout N Dout N+1 Dout N+2
R/B Busy
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Random Data Output In a Page
K9G8G08B0B
K9G8G08U0B
CLE
tCLR
CE
WE
tWB tRHW
tAR tWHR
21
ALE
tR tRC tREA
RE
tRR
I/Ox 00h Col. Add1 Col. Add2 Row Add1 Row Add2 Row Add3 30h Dout N Dout N+1 05h Col Add1 Col Add2 E0h Dout M Dout M+1
Column Address Row Address Column Address
R/B Busy
Final
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Page Program Operation
CLE
CE
tWC tWC tWC
≈
WE
tADL tWB tPROG
tWHR
ALE
RE
≈ ≈
Din Din
I/Ox 80h Co.l Add1 Col. Add2 Row Add1 Row Add2 Row Add3
N M
10h 70h I/O0
SerialData 1 up to m Byte Program Read Status
Column Address Row Address
Input Command Serial Input Command Command
R/B
≈
I/O0=0 Successful Program
I/O0=1 Error in Program
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CLE
CE
tWC tWC tWC
≈
WE
≈
23
tWHR
ALE
RE
Di
Din Din Din Din
80h Col. Add1 Col. Add2 Row Add1 Row Add2 Row Add3 85h Col. Add1 Col. Add2 10h 70h I/O0
I/Ox NN M J K
≈ ≈
≈ ≈
Serial Data Serial Input Program Read Status
Column Address Row Address Random Data Column Address Serial Input
Input Command Input Command Command Command
R/B
≈
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Block Erase Operation
CLE
CE
tWC
WE
tWB tBERS
tWHR
ALE
RE
I/Ox 60h Row Add1 Row Add2 Row Add3 D0h 70h I/O 0
Row Address
R/B Busy
≈
Auto Block Erase Erase Command I/O0=0 Successful Erase
Setup Command Read Status I/O0=1 Error in Erase
Command
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Two-Plane Read Operation with Two-Plane Random Data Output
CLE
K9G8G08B0B
K9G8G08U0B
CE
tW
tWC tW
tWC
WE
tWB
ALE
tR
RE
25
1
CLE
tCLR tCLR
CE
tW
tWC tW
tWC
WE
tWHR tWHR
tREA tRHW tREA
ALE
tRC tRC
RE
00h A0~A7 A8~A11 A12~A19 A20~A27 A28~A30 05h A0~A7 A8~A11 E0h Dout Dout 00h A0~A7 A8~A11 A12~A19 A20~A27 A28~A30 05h A0~A7 A8~A11 E0h Dout Dout
I/Ox N N+1 M M+1
Column Address Row Address Column Address Column Address Row Address Column Address
A0 ~ A11 : Fixed ’Low’ A0 ~ A11 : Valid A0 ~ A11 : Fixed ’Low’ A0 ~ A11 : Valid
A12 ~ A18 : Fixed ’Low’ A12 ~ A18 : Fixed ’Low’
R/B
A19 : Fixed ’Low’ A19 : Fixed ’High’
1 A20 ~ A30 : Fixed ’Low’ A20 ~ A30 : Fixed ’Low’
Final
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FLASH MEMORY
Two-Plane Page Program Operation
CLE
K9G8G08B0B
K9G8G08U0B
CE
tWC
≈
WE
tDBSY tWB tPROG
tWB
ALE
RE
≈ ≈
≈ ≈
Serial Data Column Address Program Program Confirm Read Status Command
Page Row Address 1 up to 2112 Byte Data Command Command
Input Command Serial Input (Dummy) (True)
26
R/B
≈
≈
I/O0=0 Successful Program
typ. 500ns I/O0=1 Error in Program
tDBSY :
max. 1µs
I/O0~7 80h Address & Data Input 11h 81h Address & Data Input 10h 70h
Note
Note: Any command between 11h and 81h is prohibited except 70h/F1h and FFh.
Final
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FLASH MEMORY
Two-Plane Block Erase Operation
CLE
K9G8G08B0B
K9G8G08U0B
CE
tWC tWC
WE
tWB tBERS tWHR
ALE
RE
27
Row Address Row Address
R/B Busy
Block Erase Setup Command1 Block Erase Setup Command2 Erase Confirm Command I/O 0 = 0 Successful Erase
I/O 0 = 1 Error in Erase
Read Status Command
R/B tBERS
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Read ID Operation
CLE
CE
WE
tAR
ALE
RE
tREA
I/Ox 00h ECh
Device 3rd cyc. 4th cyc. 5th cyc.
90h Code
Read ID Command Address. 1cycle Maker Code Device Code
Device Device Code(2nd Cycle) 3rd Cycle 4th Cycle 5th Cycle
K9G8G08B0B Same as K9G8G08U0B
K9G8G08U0B D3h 14h A5h 64h
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ID Definition Table
Description
1 Byte
st
Maker Code
2nd Byte Device Code
3rd Byte Internal Chip Number, Cell Type, Number of Simultaneously Programed Pages, etc
4th Byte Page Size, Block Size, Redundant Size, Organization, Serial Access Minimum
5th Byte Plane Number, Plane Size
3rd ID Data
Description I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0
1 0 0
2 0 1
Internal Chip Number
4 1 0
8 1 1
2 Level Cell 0 0
4 Level Cell 0 1
Cell Type
8 Level Cell 1 0
16 Level Cell 1 1
1 0 0
Number of
2 0 1
Simultaneously
4 1 0
Programmed Pages
8 1 1
Interleave Program Not Support 0
Between multiple chips Support 1
Not Support 0
Cache Program
Support 1
4th ID Data
Description I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0
1KB 0 0
Page Size 2KB 0 1
(w/o redundant area ) 4KB 1 0
8KB 1 1
64KB 0 0
Block Size 128KB 0 1
(w/o redundant area ) 256KB 1 0
512KB 1 1
Redundant Area Size 8 0
( byte/512byte) 16 1
x8 0
Organization
x16 1
50ns/30ns 0 0
25ns 1 0
Serial Access Minimum
Reserved 0 1
Reserved 1 1
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5th ID Data
Description I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0
1 0 0
2 0 1
Plane Number
4 1 0
8 1 1
64Mb 0 0 0
128Mb 0 0 1
256Mb 0 1 0
Plane Size 512Mb 0 1 1
(w/o redundant Area) 1Gb 1 0 0
2Gb 1 0 1
4Gb 1 1 0
8Gb 1 1 1
Reserved 0 0 0
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Device Operation
PAGE READ
Page read is initiated by writing 00h-30h to the command register along with five address cycles. After initial power up, 00h command
is latched. Therefore only five address cycles and 30h command initiates that operation after initial power up. The 2,112 bytes of data
within the selected page are transferred to the data registers in less than 60µs(tR). The system controller can detect the completion of
this data transfer(tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the data registers, they may be read
out in 25ns cycle time by sequentially pulsing RE. The repetitive high to low transitions of the RE clock make the device output the
data starting from the selected column address up to the last column address.
The device may output random data in a page instead of the consecutive sequential data by writing random data output command.
The column address of next data, which is going to be out, may be changed to the address which follows random data output com-
mand. Random data output can be operated multiple times regardless of how many times it is done in a page.
CLE
CE
WE
ALE
R/B tR
RE
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R/B tR
RE
Address Address
I/Ox 00h 5Cycles 30h Data Output 05h 2Cycles E0h Data Output
PAGE PROGRAM
The device is programmed basically on a page basis, and the number of consecutive partial page programming operation within the
same page without an intervening erase operation must not exceed 1 time for the page. The addressing should be done in sequential
order in a block. A page program cycle consists of a serial data loading period in which up to 2,112bytes of data may be loaded into
the data register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the five cycle address inputs and
then serial data loading. The data other than those to be programmed does not need to be loaded. The device supports random data
input in a page. The column address for the next data, which will be entered, may be changed to the address which follows random
data input command(85h). Random data input may be operated multiple times regardless of how many times it is done in a page.
The Page Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering the
serial data will not initiate the programming process. The internal write state controller automatically executes the algorithms and tim-
ings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the
Read Status Register command may be entered to read the status register. The system controller can detect the completion of a pro-
gram cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset
command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be
checked(Figure 8). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command
register remains in Read Status command mode until another valid command is written to the command register.
"0"
I/Ox 80h Address & Data Input 10h 70h I/O0 Pass
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Figure 9. Random Data Input In a Page
tPROG
R/B
"0"
I/Ox 80h Address & Data Input 85h Address & Data Input 10h 70h I/O0 Pass
COPY-BACK PROGRAM
Copy-Back program with Read for Copy-Back is configured to quickly and efficiently rewrite data stored in one page without data re-
loading when the bit error is not in data stored. Since the time-consuming re-loading cycles are removed, the system performance is
improved. The benefit is especially obvious when a portion of a block is updated and the rest of the block also needs to be copied to
the newly assigned free block. Copy-Back operation is a sequential execution of Read for Copy-Back and of copy-back program with
the destination page address. A read operation with "35h" command and the address of the source page moves the whole 2,112-byte
data into the internal data buffer. A bit error is checked by sequential reading the data output. In the case where there is no bit error,
the data do not need to be reloaded. Therefore Copy-Back program operation is initiated by issuing Page-Copy Data-Input command
(85h) with destination page address. Actual programming operation begins after Program Confirm command (10h) is issued. Once
the program process starts, the Read Status Register command (70h) may be entered to read the status register. The system control-
ler can detect the completion of a program cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. When
the Copy-Back Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 10 & Figure 11). The command register
remains in Read Status command mode until another valid command is written to the command register.
During copy-back program, data modification is possible using random data input command (85h) as shown in Figure11.
"0"
I/Ox 00h Add.(5Cycles) 35h Data Output 85h Add.(5Cycles) 10h 70h I/O0 Pass
≈
Col. Add.1,2 & Row Add.1,2,3 Col. Add.1,2 & Row Add.1,2,3
"1"
Source Address Destination Address
Fail
Note: 1. Copy-Back Program operation is allowed only within the same memory plane.
Figure 11. Page Copy-Back Program Operation with Random Data Input
tPROG
tR
R/B
≈
I/Ox 00h Add.(5Cycles) 35h Data Output 85h Add.(5Cycles) Data 85h Add.(2Cycles) Data 10h 70h
≈
Col. Add.1,2 & Row Add.1,2,3 Col. Add.1,2 & Row Add.1,2,3 Col. Add.1,2
Source Address Destination Address
There is no limitation for the number of repetition.
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BLOCK ERASE
The Erase operation is done on a block basis. Block address loading is accomplished in three cycles initiated by an Erase Setup
command(60h). Only address A19 to A30 is valid while A12 to A18 is ignored. The Erase Confirm command(D0h) following the block
address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command ensures that
memory contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When
the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 10 details the sequence.
tBERS
R/B
"0"
I/Ox 60h Address Input(3Cycle) D0h 70h I/O0 Pass
Fail
Figure 13. Two-Plane Page Read Operation with Two-Plane Random Data Out
tR
R/B
R/B
I/Ox 00h Address (5 Cycle) 05h Address (2 Cycle) E0h Data Output
R/B
I/Ox 00h Address (5 Cycle) 05h Address (2 Cycle) E0h Data Output
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tDBSY tPROG
R/B
"0"
I/O0 ~ 7 80h Address & Data Input 11h 81h Address & Data Input 10h 70h I/O0 Pass
NOTE : 1. It is noticeable that physically same row address is applied to two planes .
2. Any command between 11h and 81h is prohibited except 70h/F1h and FFh.
Plane 0 Plane 1
(2048 Block) (2048 Block)
Block 0 Block 1
Block 2 Block 3
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Figure 15. Two-Plane Copy-Back Program Operation
tR
R/B
R/B
I/Ox 00h Address (5 Cycle) 05h Address (2 Cycle) E0h Data Output
R/B
I/Ox 00h Address (5 Cycle) 05h Address (2 Cycle) E0h Data Output
tDBSY tPROG
R/B
Plane0 Plane1
Target page Target page (1) : Two-Plane Read for Copy Back
(2) : Two-Plane Random Data Out
(1) (3) (1) (3) (3) : Two-Plane Copy-Back Program
Note: 1. Copy-Back Program operation is allowed only within the same memory plane.
2. Any command between 11h and 81h is prohibited except 70h/F1h and FFh.
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"0"
I/OX 60h Address (3 Cycle) 60h Address (3 Cycle) D0h 70h I/O0 Pass
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READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h or F1h command to the command register, a read cycle
outputs the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control
allows the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or
CE does not need to be toggled for updated status. Refer to table 3 and Table 4 for specific F1h Status Register definitions. The com-
mand register remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a
random read cycle, the read command(00h) should be given before starting read cycles.
NOTE : 1. I/Os defined ’Not use’ are recommended to be masked out when Read Status is being executed.
NOTE : 1. I/Os defined ’Not use’ are recommended to be masked out when Read Status is being executed.
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READ ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Five read cycles sequentially output the manufacturer code(ECh), and the device code and 3rd cycle ID, 4th cycle ID, 5th cycle
ID respectively. The command register remains in Read ID mode until further commands are issued to it. Figure 17 shows the oper-
ation sequence.
CLE tCLR
tCEA
CE
WE
tAR
ALE
RE
Device Device Code(2nd Cycle) 3rd Cycle 4th Cycle 5th Cycle
K9G8G08B0B Same as K9G8G08U0B
K9G8G08U0B D3h 14h A5h 64h
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to Table 5 for device status after reset operation. If the device is
already in reset state a new reset command will be accepted by the command register. The R/B pin changes to low for tRST after the
Reset command is written. Refer to Figure 18 below.
tRST
R/B
I/OX FFh
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Note: When program operation is abnormally aborted (ex. power-down, reset), not only page data under program but also
paired page data may be damaged.
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READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 19). Its value can be
determined by the following guidance.
Rp
ibusy
VCC
CL
VOL
Busy
tf tr
GND
Device
Ibusy [A]
Ibusy [A]
150
1.1 120 1.2
1K 2K 3K 4K 1K 2K 3K 4K
Rp(ohm) Rp(ohm)
Rp value guidance
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Data Protection & Power up sequence
The device internal initialization starts after the power supply reaches an appropriate level in the power on sequence. During the ini-
tialization the device Ready/Busy signal indicates the Busy state as shown in the figure 20. In this time period, the acceptable com-
mand is 70h(F1h).
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.8V(2.7V device), 2V(3.3V device). WP pin provides hardware protection and is
recommended to be kept at VIL during power-up and power-down. The two step command sequence for program/erase provides
additional software protection.
≈
~ 2.3V ~ 2.3V
VCC
High
≈
WP
≈
WE
Don’t care
≈
5 ms max Operation
100µs
Ready/Busy
≈
Note :During the initialization, the device consumes a maximum current of 30mA (ICC1)
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WP AC TIMING GUIDE
Enabling WP during erase and program busy is prohibited. The erase and program operations are enabled and disabled as follows:
1. Enable Mode
≈
WE
WP
RnB tww(min.100ns)
2. Disable Mode
WE ≈
I/O 80h 10h
WP
RnB
tww(min.100ns)
1. Enable Mode
≈
WE
WP
RnB
tww(min.100ns)
2. Disable Mode
≈
WE
WP
RnB
tww(min.100ns)
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