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V
l
dV
I C
dt
1
XC
2 fC
Febus Reidj G. Cruz / School of EECE / Mapua Institute of Technology Febus Reidj G. Cruz / School of EECE / Mapua Institute of Technology
2
A
C o r n 1
d
C = capacitance, F
O = permittivity of vacuum, 8.85 x 10
-12 F/m
Febus Reidj G. Cruz / School of EECE / Mapua Institute of Technology Febus Reidj G. Cruz / School of EECE / Mapua Institute of Technology
A
C o r n 1
d
2
21m
10 mm
C 8.85 10 12 F
1
1,000 mm
10 1 Q CV
m 1m
10 m
1,000,000 m Q = charge, coulomb (C)
C = capacitance, farad (F)
C 79.65 pF V = voltage, volt (V)
Febus Reidj G. Cruz / School of EECE / Mapua Institute of Technology Febus Reidj G. Cruz / School of EECE / Mapua Institute of Technology
Q CV
Q 10 F 12V
6.25 1018 electrons dV
Q 120 C
1C
I C
dt
Q 750 trillion electrons
I = current, ampere (A)
C = capacitance, farad (F)
dV/dt = change in voltage wrt time , volt/second (V/s)
Febus Reidj G. Cruz / School of EECE / Mapua Institute of Technology Febus Reidj G. Cruz / School of EECE / Mapua Institute of Technology
W E QV
X CT ( Series ) X C1 XC2 X Cn 1 1 1 1
1
P CV 2 f 1 1 1 1 X CT ( Parallel ) X C1 XC2 X Cn
2 CT ( Series ) C1 C2 Cn CT ( Parallel ) C1 C2 Cn
Febus Reidj G. Cruz / School of EECE / Mapua Institute of Technology Febus Reidj G. Cruz / School of EECE / Mapua Institute of Technology
Capacitive Reactance Resistance
Symbol
Unit
Effect of frequency
Febus Reidj G. Cruz / School of EECE / Mapua Institute of Technology Febus Reidj G. Cruz / School of EECE / Mapua Institute of Technology
Electronics 1 –Capacitors