Ion Implantation

BITS Pilani Dr. Pankaj Arora

Department of Electrical and Electronics Engineering
Pilani Campus
 BITS Pilani
Pilani Campus

MEL ZG611, IC Fabrication Technology

Lecture No. 7
Special thanks to: Prof. Nandita Das Gupta
Recap

Diffusion
• Fick’s law

• Kinetics of Diffusion
a) Infinite source (Pre-deposition)- erfc profile
b) Constant total impurity (Drive in)- Gaussian profile
• Successive diffusion (Emitter push effect)
• How B, P and As is diffused in the sample
• Demerits of diffusion

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Ion Implantation

Advantages Disadvantages

• Less prone to contamination • The system is very expensive

• Surface damage after the

• Better Control implantation

• Low Temp • Need of activating the dopants

after ion implantation by
annealing process
• Better Flexibility

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Ion Implantation system

2.

3.

4.

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Magnetic Analyser

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Ion Implantation system

Mass separation technique

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Ion implantation system

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 Defect during Implantation

• Nuclear Stopping: Energetic ion beam is imparting some of its

energy to the lattice atom and the lattice atom can get displaced
from its original site and that is how the defects are created, which
is called Nuclear stopping

• Electronic Stopping: Energetic ion beam supplies the energy to

the bound electrons and bound electrons become free electrons,
because they gain the energy and that is called electronic stopping.

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Ion implantation mechanism

dE/dx : Energy loss

N: Concentration
Sn: Nuclear stopping
SE: Electron Stopping

Range of ions: Where the energy for the ions reached to 0 value

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Energy losing mechanism

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Range calculation
Electronic stopping
Range is directly
Electronic Stopping
proportional to
Square root of energy

Nuclear stopping

Range is directly
proportional to energy
Nuclear Stopping

The critical energy for

boron is 15 keV, for
phosphorus it is 150
keV.

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Important parameters in
ionization

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What is the doping profile in
ion-implantation

ΔRp : the standard deviation or Straggle,

Rp is the mean value for the Gaussian profile
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How to calculate the dose

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 Channeling during ion
implantation
Channeling process: • Prior to the actual implantation itself, a
When the ion beam is directed along a self-implantation an energetic silicon
beam is directed onto the silicon surface
crystallographic axis, ion beams will for creating disorder on the surface to
find the corridor in between the lattice make the surface amorphized,
atoms and can move forward a
considerable distance without any As the dose increases,
collision and will move much deeper the amount of
than that is normally. This is called channeling becomes
lesser
channeling
• During the process, ion beam should
not be parallel to any of the Si crystal
axis. In other words it should be at
some angle with the axis so that
substrate should be considered as
Amorphous.
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Another way to reduce
channeling Lateral diffusion in ion implantation

By doing the ion

implantation through
a thin oxide as oxide is
amorphous in nature

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Controlling dose in Ion
Implantation

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Damage to device during ion
implantation
E0  Ed , no problem, no displacement
E0 = Incident Ion Energy

E0 > Ed, < 2Ed , then we will have a single

displacement

Ed = Energy required
to dislodge a host
E0 > 2Ed , then we will have multiple
atom
displacement

Number of displaced atoms per incident

ion will be
E0/2Ed

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 How to identify damages

Damages

Visual Inspection
Electron Conductivity, mobility and
Microscopy life time

Surface has become cloudy Microscopy tells about the exact crystalline
or milky. So, the surface is imperfections present in the damaged surface
damaged

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Consequences of damages
during ion implantation
Conductivity of the sample:
Introduced dopants have anyhow gone into the semiconductor, but they are
not sitting in their proper substitution sites and therefore not taking part in
the electronic activity

Mobility of the sample:

Because of the highly disordered damaged region, the mobility of the
carriers will be extremely low

Lifetime for the carriers:

Because of the highly disordered damaged region, the life time for the
carriers will be very small

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What happens when light hits
the sample
• Light ion gets deflected by a
large angle at each collision,
since it is transferring a
relatively smaller amount of
energy, will cause small
damage

• Heavy ion transfers a large

amount of energy to the lattice
atom at every collision and it
gets deflected only by a small
scattering angle and will cause
multiple dislocations

• A large dose of a heavy ion,

will cause heavy damage ,
and Si crystal can be converted
into amorphous

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Advantages for amorphous
nature of Si
• Amorphous nature of Si causes less
damage so less annealing is required to
get rid of the damages
Annealing for the damages

• Annealing essentially means a high

temperature treatment

• At a very high temperature, some

materials can not withstand

• For a longer time annealing, the doping

profile can be completely changed

Controlling the doping profile • Temperature and time plays a very

important role for the annealing
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Annealing at low temperature

Annealing

Material is pre-amorphized Material is not pre-amorphized

T <= 400˚ C Recrystallization by

20-30 % Solid St. Epitaxy
50-90 %

T < 600 ˚C
Conductivity
Annealing at low temperature
(400⁰ C) will help to recover
20 to 30% of the conductivity
Annealing at 600⁰ C will help to regain the
crystalline order in the sample due to solid
state epitaxy
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Annealing at high temperature

To get the full life time back, you have to go to high temperature,
about 10000C which will give full life time recovery
T >= 950˚C
The case when Material is not pre-amorphized
• In low dose, light ions implantation, full recovery of all the parameters;
conductivity, mobility, as well as lifetime is possible by annealing at
800⁰ to 950⁰ C.

• In low dose with heavy ions, annealing about 10000C, will give you
recovery of all the parameters.

• In high dose with heavy ions, it will be very difficult to get full
activation

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 Let us study some Annealing
cases
For nuclear stopping, Rp is proportional to the incident energy, for electronic
stopping it is proportional to the square root of the incident energy

Since Phosphorus is a heavy ion, so nuclear stopping will be more

dominating over the electronic stopping

In case of Arsenic too, nuclear stopping will be more dominating over the
electronic stopping

In case of B, since B is a light ion, electronic stopping will dominate over

nuclear stopping and will be proportional to the square root of energy

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How annealing affects the
doping profile
During implantation, the doping profile is a Gaussian profile,

After annealing, the doping profile is modified as,

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Rapid Thermal Annealing

• Annealing process that is favored a very high temperature, but for a very
short duration, one minute or even less than is called rapid annealing.

• Rapid thermal annealing, in which case the samples are actually taken
inside a chamber, chamber is evacuated, then some inert ambient or
hydrogen is pumped and usually the heating is provided by a battery of
lamps

• After a short period of time , the light is switched off and the system is
cooled down with air cooling or liquid nitrogen cooling or water
cooling, so that the temperature is brought down also very quickly
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Steps for doping using ion
implantation system

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Masking for ion implantation

• In case of ion implantation, we can even use photoresist as a

mask since ion implantation is a room temperature process.

• But, when the ion beam is incident over the mask since these
ions are energetic particles, so they will penetrate the mask
material too

• The masking efficiency depends on the thickness of the masking

material. If thickness is smaller, then more impurity will be put in
silicon, if thickness is larger less impurity will be put in silicon.

• The masking efficiency is large, when thickness is large

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Optimal thickness for masking
layer

Hatched
region

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Optimal thickness for masking
layer

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Optimal thickness for masking
layer

The amount of the impurity which is not protected by the

mask, which is going inside the semiconductor

Mask layer thickness, d should be

greater than Rp

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Calculation for junction depth
Lapping and Staining
1. Angle lapping
2. Staining with CuS04
and dil. HF solution

Cylinderical groove technique

Cylinder with a radius, R, is used to grind a

groove in the semiconductor

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Calculation for junction depth

Cylinderical groove technique

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Calculation of impurity
distribution
• SIMS, Secondary Ion Mass Spectroscopy, which will tell
exactly how much impurity is put inside the material
• By measuring the sheet resistance

• The unit of the sheet resistance / sq

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Calculation of impurity
distribution

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Doping profile in diffusion v/s
implantation

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