Professional Documents
Culture Documents
discussions, stats, and author profiles for this publication at: https://www.researchgate.net/publication/2982743
CITATIONS READS
226 67
6 AUTHORS, INCLUDING:
T. Zwick B. Gaucher
Karlsruhe Institute of Technology IBM
398 PUBLICATIONS 2,606 CITATIONS 51 PUBLICATIONS 1,472 CITATIONS
All in-text references underlined in blue are linked to publications on ResearchGate, Available from: B. Gaucher
letting you access and read them immediately. Retrieved on: 30 March 2016
156 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 40, NO. 1, JANUARY 2005
Abstract—A low-noise amplifier, direct-conversion quadrature Europe, Japan, and the U.S. This enables high data-rate com-
mixer, power amplifier, and voltage-controlled oscillators have
been implemented in a 0.12- m, 200-GHz T 290
-GHz MAX
munications for wireless personal-area network (PAN) [25] or
point-to-point applications [1], with possible data rates of at
SiGe bipolar technology for operation at 60 GHz. At 61.5 GHz,
the two-stage LNA achieves 4.5-dB NF, 15-dB gain, consuming least 150 to 1000 Mb/s. Note that although this band undergoes
6 mA from 1.8 V. This is the first known demonstration of a silicon attenuation due to oxygen absorption of 10–15 dB/km [25], this
LNA at V-band. The downconverter consists of a preamplifier, I/Q particular absorption is insignificant for short-range links. The
double-balanced mixers, a frequency tripler, and a quadrature long-range limitation imposed by path loss and wall attenuation
generator, and is again the first known demonstration of silicon [26] can instead be beneficial, since it improves frequency reuse
active mixers at V-band. At 60 GHz, the downconverter gain is
18.6 dB and the NF is 13.3 dB, and the circuit consumes 55 mA and minimizes interference with other systems. An example
from 2.7 V, while the output buffers consume an additional 52 mA. of the performance already achieved at 60 GHz can be found
The balanced class-AB PA provides 10.8-dB gain, 11.2-dBm + in [1], where a 1.25-Gb/s 60-GHz directional link over 10
1-dB compression point, 4.3% maximum PAE, and 16-dBm satu- meters was achieved with simple ASK modulation. Antennas
rated output power. Finally, fully differential Colpitts VCOs have with 20–27 dBi gain were used with a transceiver assembly
been implemented at 22 and 67 GHz. The 67-GHz VCO has a
phase noise better than 98 dBc/Hz at 1-MHz offset, and provides composed of five GaAs chips and two filters placed together in
a 3.1% tuning range for 8-mA current consumption from a 3-V multi-chip modules.
supply. This paper describes key front-end 60-GHz SiGe trans-
Index Terms—Direct-conversion receiver, low-noise amplifier ceiver circuits [27] designed and implemented individually
(LNA), millimeter-wave bipolar integrated circuits, mixer, power as a first step toward realizing a fully integrated wireless
amplifier, SiGe, V-band, voltage-controlled oscillator (VCO), PAN transceiver. The circuit blocks include a 60-GHz LNA;
60 GHz. a 60-GHz direct downconverter, consisting of a preampli-
fier, I/Q double-balanced mixers, a frequency tripler, and a
I. INTRODUCTION quadrature generator; a 60-GHz power amplifier (PA); and 60-
and 20-GHz VCOs. The circuits have been implemented in a
(1)
Manuscript received April 9, 2004; revised May 28, 2004. This work was
supported in part by NASA. where and are the characteristic impedance and propa-
The authors are with the IBM Thomas J. Watson Research Center, Yorktown
Heights, NY 10598 USA (e-mail: brianfl@us.ibm.com). gation constants of the line [28]. From (1), it can easily be
Digital Object Identifier 10.1109/JSSC.2004.837250 shown that short-circuited stubs are inductive for lengths less
0018-9200/$20.00 © 2005 IEEE
FLOYD et al.: SiGe BIPOLAR TRANSCEIVER CIRCUITS OPERATING AT 60 GHz 157
Fig. 1. Block diagram of four 60-GHz transceiver components—LNA, direct downconverter, PA, and 20-GHz VCO. Dashed boxes show boundaries of each chip.
[31]. The demonstrators have about 8-dB NF and 10-dBm inter-stage, and output matching networks, with stub lengths of
output power at the RX and TX antennas, respectively. Using m and series t-line lengths of m
direct-sequence spread-spectrum based QPSK modulation, for the output and inter-stage networks. MIM ac coupling capac-
a 200-Mb/s link was demonstrated over two meters using itors operating beyond self-resonance are used between
omni-directional antennas even after totally blocking the the two stages and at the output. At 60 GHz, the silicon sub-
line-of-sight. In [31], a 900-Mb/s link was demonstrated with strate exhibits low impedance; thus, care was taken in circuit
the same breadboard system using 20-dBi horn antennas. design and layout to ensure adequate reverse isolation and sta-
bility. Metal-1 ground shields are used throughout the amplifier,
B. Low-Noise Amplifier and substrate ties are included wherever possible. Also, metal-2
A two-stage single-ended LNA was implemented as shown planes are used together with many MIM bypass capaci-
in Fig. 2. The first stage common-base amplifier was chosen for tors to realize a low-impedance supply. A die photograph of the
its simple input matching, its higher gain compared to an induc- LNA is shown in Fig. 3. The die size is 0.9 0.6 mm . Dia-
tively degenerated common-emitter amplifier (due to the lack of mond-shaped pads are used at the input and output to reduce
degeneration), and its high reverse isolation which decouples the the parasitic capacitance of the pad.
input and inter-stage matching networks. The second stage con- The measured S-parameters for the LNA are shown in Fig. 4,
sists of a common-emitter cascode amplifier with emitter degen- together with the simulated results. The LNA is uncondition-
eration. Each stage provides dB of gain when biased at 3 mA ally stable over 30–110 GHz. At 61.5 GHz, the gain is 14.7 dB
and V. Single-stub tuners are used for the input, and the reverse isolation is 40 dB, when biased at 6 mA from
FLOYD et al.: SiGe BIPOLAR TRANSCEIVER CIRCUITS OPERATING AT 60 GHz 159
Fig. 3. Die photograph of 60-GHz low-noise amplifier. Die size is 0.9 2 0.6 mm .
Fig. 4. Measured and simulated S-parameters of the LNA for V = 1:8V, I = 6 mA.
a 1.8-V supply. The input return loss is 6 dB, while the output S-parameters still agree. This is shown in Fig. 4 by the curve
return loss is 17 dB. Model-to-hardware correlation is excellent labeled “sim. w/o pad” in the plot. Work is ongoing to char-
for , and . The miss in , though, was unexpected, acterize the bondpad using on-chip TRL (Thru-Reflect-Line)
particularly given that the output match was right on target. An calibration structures.
alternate version of the LNA which had 50- coplanar wave- Fig. 5 shows the measured and simulated NF of the LNA (with
guide (CPW) tapers at the input and output [27] showed pads) at 6 mA and 1.8 V. No on-chip loss has been de-embedded
and better than 12 dB, as expected. These CPW tapers from this result. Note that a better-calibrated WR-15 noise
absorb pad parasitics, providing a 50- impedance directly at source over that used in [27] resulted in less ripple across
the microstrip ports of the LNA. Since the CPW-LNA input the band, but slightly higher NF values. The measured NF is
match was on target, we know that the input matching network 4.5 dB at 61.5 GHz, while the simulated NF is 4.6 dB. The
and transistor have been correctly modeled. This then leaves taper-LNA also has a NF of 4.5 dB when the insertion loss of
the bondpad as the source of mismatch. Simulations reveal that the tapers is de-embedded. The simulated minimum NF of the
when the bondpad capacitance is significantly reduced, simu- LNA is 4.2 dB, while the of a single transistor is 3.1 dB.
lated and measured agree very well, while the other three From simulation, the input common-base device contributes
160 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 40, NO. 1, JANUARY 2005
Fig. 5. Measured and simulated noise figure (NF) of the LNA for V = 1:8 Fig. 6. Measured gain, NF, and current of the taper-LNA versus temperature.
V, I = 6 mA.
Fig. 11. Die photo of the direct downconverter. Die size is 1.9 2 1.65 mm . Fig. 12. Measured conversion gain and NF for the direct downconverter.
Fig. 14. Measured and simulation conversion gain and NF of downconverter Fig. 15. Measured I-channel to Q-channel gain balance versus frequency.
versus temperature with PTAT bias.
D. Power Amplifier
The PA is a two-stage class-AB balanced amplifier, designed
to directly feed a differential antenna, eliminating any need
for an on-chip balun. The balanced amplifier is implemented
with two unbalanced amplifiers in parallel. Each unbalanced
Fig. 16. Measured I-channel to Q-channel phase difference versus frequency.
amplifier, shown in Fig. 17, consists of two common-emitter
amplifiers, with input, inter-stage, and output matching net-
works. Single open-circuited stub tuning networks are used at the measured gain and output power versus tempera-
the input and output, while the inter-stage match uses a MIM ture, with constant-current biasing. Across 5 C–135 C, the gain
capacitor instead of a stub. Quarter-wavelength RF chokes and each drop around 4 dB, yet the amplifier still delivers
supply to each stage. Each of the four power transistors 9-dBm output power at 100 C. Input and output return losses
has a separate temperature-compensated bias circuit [33], which at 61.5 GHz are 6.2 and 8.9 dB, respectively, with respect to a
is located nearby for good thermal matching. Two major prob- 100- differential impedance.
lems associated with the design of on-chip power amplifiers in
an advanced SiGe bipolar technology are the low breakdown E. Voltage-Controlled Oscillators
voltages and the high loss of the on-chip impedance transfor- VCOs have been implemented at both 20 GHz, for use
mation. In order to operate the transistor at higher voltages, with the frequency tripler, and at 60 GHz, for use as a fun-
each bias circuit provides to the power transistor’s damental-frequency oscillator. A fully differential Colpitts
base terminal. Thus, the NPN is limited by operation topology is used at both frequencies. Fig. 21 shows a schematic
rather than , where is slightly above 4 V for of the 60-GHz VCO. The hallmark capacitive divider of the
equal to 300 . Fig. 18 shows a die photograph of the Colpitts architecture is formed by the base-to-emitter capaci-
PA, which has a size of 2.1 0.8 mm . Clearly visible left tance of and the coupling capacitor between both sides
and right are the two identical unbalanced amplifiers. of the VCO. Microstrip transmission lines are used to form a
The PA was biased at 150 mA from a 2.5-V supply. Fig. 19 resonant circuit, connecting the bases to a current mirror and
shows the measured transducer power gain and output power realizing an inductance of 40 pH. Frequency tuning is provided
versus input power for the balanced amplifier. At 61.5 GHz, by junction varactors located in the base. No explicit output
the gain and are 10.8 dB and 11.2 dBm, respectively. buffers are included—the output is obtained directly from the
The saturated output power level is 16.2 dBm—measured for collector, which has a microstrip load. The 20-GHz VCO is
an unbalanced amplifier to which 3 dB is added. The max- identical in architecture except that a slab inductor is used in
imum power-added efficiency (PAE) is 4.3%. Fig. 20 shows place of the base microstrip, a spiral inductor is used in place
164 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 40, NO. 1, JANUARY 2005
Fig. 17. Simplified schematic of unbalanced amplifier used for power amplifier.
Fig. 18. Die photograph of the PA. Die size is 2.1 2 0.8 mm .
Fig. 19. Measured transducer power gain and output power at 61.5 GHz versus
input power for the balanced PA. Fig. 20. Measured gain and output power (P ) of the PA versus
temperature.
correlation has been achieved for each circuit. At 61.5 GHz, the
LNA achieves 4.5-dB NF, 14.7-dB gain, and 10.8-mW power
dissipation, and is the first known demonstration of a silicon
LNA at V-band. In comparison, III-V LNAs have typically
achieved NFs in the 2 to 4 dB range, gains greater than or equal
to 20 dB, and power dissipations between 20 and 160 mW
[1]–[5]. Our silicon V-band LNA achieves similar NF to GaAs
at lower power consumption. The III-V LNAs, though, do
achieve higher compression points than this SiGe LNA.
At 61.5 GHz, the downconverter achieves 16-dB gain,
14.8-dB NF, and 150-mW power dissipation. Once again, this
is the first known demonstration of active mixers in silicon
at V-band. In comparison, III-V mixers are often passive or
diode-based [35], requiring LO-drive levels of 10 to 20 dBm
and thereby consuming a large amount of power in the LO
amplifiers (e.g., 1 W in [3]). Thus, the silicon downconverter
described here represents a very low power consumption.
Also, the downconverter block contains 80 transistors and 43
inductors or transmission lines, which is a very high level of
Fig. 22. Output spectrum of 60-GHz VCO, showing phase noise at 1-MHz integration at this frequency.
offset. The PA provides a 10.8-dB gain, a 11.2-dBm 1-dB com-
pression point, and a maximum PAE of 4.3%. The saturated
The 20-GHz VCO can be tuned from 21.2 to 22.4 GHz output power is 16 dBm. This is the second known demon-
(4.5%), and the differential output power is 5.5 dBm. Power stration of a silicon PA at these frequencies, where Li [21]
consumption is 9 mA from 3 V. Phase noise at 1-MHz offset is has demonstrated a 14-dBm silicon amplifier at 77 GHz with
between 109 and 116 dBc/Hz. Note that this measurement % efficiency. In comparison, III-V PAs for V-band deliver
helps to verify the 67-GHz phase noise measurements, since 23–30 dBm of power with 8–15 dB of gain and 20%–40% of
adjusting for frequency, we should see at least a or power-added efficiency [6]–[9]. Finally, 60- and 20-GHz VCOs
9.5-dB improvement. More than this improvement is seen have been demonstrated with very low phase noise, albeit with
since varactor Q should be three times larger at 22 GHz than at narrow tuning ranges. The 60-GHz VCO achieves an excellent
67 GHz. phase noise at 1-MHz offset between 98 and 104 dBc/Hz,
which is comparable to the performance achieved in [17].
Based on these results, a fully integrated transceiver with
IV. SUMMARY AND CONCLUSIONS
less than 6-dB NF and greater than 11-dBm output power
This paper has described key RF front-end components should be possible. Specifically, cascading the LNA and down-
in silicon for a 60-GHz transceiver, including an LNA, a di- converter mathematically results in a receiver front-end with a
rect-downconverter, a PA, and VCOs. The performance of these 5.8-dB NF, 31-dB gain, 22-dBm IIP3, and 32-dBm .
circuits is summarized in Table I. Excellent model-to-hardware The utility of such hardware has already been demonstrated in
166 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 40, NO. 1, JANUARY 2005
TABLE I
SUMMARY OF MEASURED PERFORMANCE OF LNA, DOWNCONVERTER, PA, AND VCO
Section III-A and in [31], where discrete III-V based 60-GHz [6] O. Tang et al., “A 560 mW, 21% power-added efficiency V-band
MMIC power amplifier,” in GaAs IC Symp. Tech. Dig., Nov. 1996,
radios with 8-dB NF and 10-dBm output power (both an- pp. 115–118.
tenna-referred) were used to implement a 200-Mb/s omnidi- [7] R. Kasody et al., “A high efficiency V-band monolithic HEMT power
rectional link and a 900-Mb/s directional link in our lab. This amplifier,” IEEE Microw. Guided Wave Lett., vol. 4, no. 9, pp. 303–304,
Sep. 1994.
hardware, then, is the first step toward the implementation [8] W. Kong et al., “Very high efficiency V-band power InP HEMT
of a fully integrated 60-GHz transceiver in SiGe technology. MMICs,” IEEE Electron Device Lett., vol. 21, no. 11, pp. 521–523,
Clearly, it is in the integration level where silicon can truly Nov. 2000.
[9] Y. Chen et al., “A single-chip 1-W InP HEMT V-band module,” in GaAs
stand out over III-V implementations. SiGe’s high level of in- IC Symp. Technical Dig., Oct. 1999, pp. 149–152.
tegration and potentially low power consumption of the MMW [10] B. Jagannathan et al., “Self-aligned SiGe NPN transistors with 285 GHz
downconverter/upconverter could open the door to new MMW f and 207 GHz fT in a manufacturable technology,” IEEE Electron
Device Lett., vol. 23, no. 5, pp. 258–260, 2002.
applications and market opportunities, including high data-rate [11] T. Meister et al., “SiGe bipolar technology with 3.9 ps gate delay,” in
wireless personal-area networks. Proc. Bipolar/BiCMOS Circuits and Technology Mtg., Sep. 2003, pp.
103–106.
[12] T. Hashimoto et al., “Direction to improve SiGe BiCMOS technology
ACKNOWLEDGMENT featuring 200-GHz SiGe HBT and 80-nm gate CMOS,” in Int. Electron
Device Mtg. Tech. Dig., Dec. 2003, pp. 129–132.
The authors thank IBM’s SiGe Technology group for [13] H. Rucker et al., “SiGe:C BiCMOS technology with 3.6 ps gate delay,”
in Int. Electron Device Mtg. Tech. Dig., Dec. 2003, pp. 121–124.
chip fabrication. Additionally, the authors thank D. Beisser, [14] J.-S. Rieh et al., “SiGe HBT’s for millimeter-wave applications with si-
D. Goren, D. Friedman, M. Soyuer, and M. Oprysko of IBM multaneously optimized f and f of 300 GHz,” in IEEE RFIC Symp.
Research, and Y. Tretiakov, and G. Freeman of IBM Micro- Dig. Papers, Jun. 2004.
[15] W. Winkler et al., “60 GHz and 76 GHz Oscillators in 0.25 m SiGe:C
electronics for their contributions. BiCMOS,” in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech.
Papers, Feb. 2003, pp. 454–455.
[16] Y. Baeyens and Y. Chen, “A monolithic integrated 150 GHz SiGe HBT
REFERENCES push-push VCO with simultaneous differential V-band output,” in IEEE
Int. Microwave Symp. Dig., Jun. 2003, pp. 877–880.
[1] K. Ohata et al., “1.25 Gb/s wireless gigabit ethernet link at 60 GHz- [17] H. Li and H.-M. Rein, “Wide-band VCO’s in SiGe production tech-
band,” in IEEE Int. Microwave Symp. Dig., Jun. 2003, pp. 373–376. nology operating up to about 70 GHz,” IEEE Microw. Wireless Compon.
[2] L. Tran et al., “High performance, high yield millimeter-wave MMIC Lett., vol. 13, no. 10, pp. 425–427, Oct. 2003.
LNA’s using InP HEMTs,” in IEEE Int. Microwave Symp. Dig., Jun. [18] H. Li, H.-M. Rein, and M. Schwerd, “SiGe VCO’s operating up to 88
1996, pp. 9–12. GHz, suitable for automotive radar sensors,” Electron. Lett., vol. 39, no.
[3] M. Siddiqui et al., “GaAs components for 60 GHz wireless communi- 18, pp. 1326–1327, Sep. 2003.
cation applications,” presented at the GaAs Mantech Conf., Apr. 2002. [19] W. Perndl, H. Knapp, K. Aufinger, T. Meister, W. Simburger, and A.
[4] A. Fujihara et al., “High performance 60-GHz coplanar MMIC LNA Scholtz, “A 98 GHz voltage controlled oscillator in SiGe bipolar tech-
using InP heterojunction FET’s with AlAs/InAs superlattice layer,” in nology,” in Proc. Bipolar/BiCMOS Circuits and Technology Mtg., Sep.
IEEE Int. Microwave Symp. Dig., Jun. 2000, pp. 21–24. 2003.
[5] K. Nishikawa et al., “Compact LNA and VCO 3-D MMIC’s using com- [20] H. Li, H.-M. Rein, and T. Suttorp, “Design of W-band VCO’s with high
mercial GaAs PHEMT technology for V-band single-chip TRX MMIC,” output power for potential application in 77 GHz automotive radar sys-
in IEEE Int. Microwave Symp. Dig., Jun. 2002, pp. 1717–1720. tems,” in GaAs IC Symp. Tech. Dig., Oct. 2003, pp. 263–266.
FLOYD et al.: SiGe BIPOLAR TRANSCEIVER CIRCUITS OPERATING AT 60 GHz 167
[21] Y. Li, M. Bao, M. Ferndahl, and A. Cathelin, “23 GHz front-end circuits Ullrich R. Pfeiffer received the diploma degree in
in SiGe BiCMOS technology,” in IEEE RFIC Symp. Dig. Papers, Jun. physics and the Ph.D. degree in physics from the Uni-
2003, pp. 99–102. versity of Heidelberg, Germany, in 1996 and 1999,
[22] I. Gresham et al., “Ultra wide and 24 GHz automotive radar front-end,” respectively.
in IEEE Int. Microwave Symp. Dig., Jun. 2003, pp. 369–372. In 1997, he worked as a Research Fellow at the
[23] H. Hashemi, X. Guan, and A. Hajimiri, “A fully integrated 24 GHz Rutherford Appleton Laboratory, Oxfordshire, U.K.,
8-path phased-array receiver in silicon,” in IEEE Int. Solid-State Cir- where he developed high-speed multi-chip modules.
cuits Conf. (ISSCC) Dig. Tech. Papers, Feb. 2004, pp. 390–391. In 2000, his research was based on high-integrated
[24] S. Hackl, J. Bock, M. Wurzer, and A. L. Scholtz, “40 GHz monolithic real-time electronics for a particle physics exper-
integrated mixer in SiGe bipolar technology,” in IEEE Int. Microwave iment at the European Organization for Nuclear
Symp. Dig., Jun. 2002, pp. 1241–1244. Research (CERN), Switzerland. He joined IBM
[25] P. Smulders, “Exploiting the 60 GHz band for local wireless multimedia in 2001 and is presently a Research Staff Member at the IBM T. J. Watson
access: Prospects and future directions,” IEEE Commun. Mag., no. 1, Research Center. His research involves RF circuit design, high-power amplifier
pp. 140–147, Jan. 2002. design at 60 GHz and 77 GHz, high-frequency modeling and packaging for
[26] H. Xu, V. Kukshya, and T. S. Rappaport, “Spatial and temporal charac- 60-GHz and 3G cellular systems.
teristics of 60-GHz indoor channels,” IEEE J. Select. Areas Commun.,
vol. 20, no. 3, pp. 620–630, Apr. 2002.
[27] S. Reynolds, B. Floyd, U. Pfeiffer, and T. Zwick, “60 GHz transceiver
circuits in SiGe bipolar technology,” IEEE Int. Solid-State Circuits Conf.
(ISSCC) Dig. Tech. Papers, pp. 442–443, Feb. 2004. Thomas Zwick (M’00) received the Dipl.-Ing.
[28] D. M. Pozar, Microwave Engineering, 2nd ed. New York: Wiley, 1998. (M.S.E.E.) and the Dr.-Ing. (Ph.D.E.E.) degrees
[29] D. M. Goren et al., “On-chip interconnect-aware design and modeling from the Universität Karlsruhe (TH), Germany in
methodology, based on high bandwidth transmission line devices,” in 1994 and 1999, respectively.
Proc. 2003 Design Automation Conf., Jun. 2003, pp. 724–727. From 1994 to 2001 he was a Research Assis-
[30] S. K. Reynolds, “A 60-GHz superheterodyne down-conversion mixer tant at the Institut für Höchstfrequenztechnik und
in silicon-germanium bipolar technology,” IEEE J. Solid-State Circuits, Elektronik (IHE) at the Universität Karlsruhe (TH),
vol. 39, no. 11, pp. 2065–2068, Nov. 2004. Germany. Since February 2001, he has been with
[31] B. Gaucher et al., “Silicon monolithic broadband millimeter wave radio the IBM T. J. Watson Research Center, Yorktown
technology,” in Proc. Int. Conf. Space Mission Challenges for Informa- Heights, NY. His research topics include wave
tion Technology, Jun. 2003, pp. 113–121. propagation, stochastic channel modeling, channel
[32] S. K. Reynolds, B. A. Floyd, T. Beukema, T. Zwick, U. Pfeiffer, and measurement techniques, material measurements, microwave techniques,
H. Ainspan, “A direct conversion receiver IC for WCDMA mobile sys- wireless communication system design and millimeter wave antenna design.
tems,” IEEE J. Solid-State Circuits, vol. 38, no. 9, pp. 1555–1560, Sep. He participated as an expert in the European COST231 Evolution of Land
2003. Mobile Radio (Including Personal) Communications and COST259 Wireless
[33] E. Järvinen, S. Kalajo, and M. Matilainen, “Bias circuits for GaAs HBT Flexible Personalized Communications. For the Carl Cranz Series for Scientific
power amplifiers,” in IEEE Int. Microwave Symp. Dig., Jun. 2001, pp. Education, he served as a lecturer for Wave Propagation.
507–510. Dr. Zwick received the Best Paper Award from the International Symposium
[34] E. Hegazi, H. Sjoland, and A. A. Abidi, “A filtering technique to lower on Spread Spectrum Technology and Applications (ISSSTA) 1998.
LC oscillator phase noise,” IEEE. J. Solid-State Circuits, vol. 36, no. 12,
pp. 1921–1930, Dec. 2001.
[35] T. H. Oxley, “50 years development of the microwave mixer for hetero-
dyne reception,” IEEE Trans. Microw. Theory Tech., vol. 50, no. 3, pp.
867–876, Mar. 2002. Troy Beukema received the B.S.E.E. and M.S.E.E. degrees from Michigan
Technological University in 1984 and 1988, respectively.
From 1984 to 1988, he was an R&D Engineer with Hewlett-Packard in the
area of communications test equipment. He joined Motorola in 1989 and con-
Brian A. Floyd (S’98–M’01) received the B.S. (with tributed to development of digital cellular wireless systems with a focus on dig-
highest honors), M.Eng., and Ph.D. degrees in elec- ital signal processing algorithm design and implementation. In 1996, he joined
trical and computer engineering from the University IBM, where he is presently a research staff member involved in communications
of Florida, Gainesville, in 1996, 1998, and 2001, system research. His research interests include communication link system de-
respectively. While at the University of Florida, sign and simulation, with an emphasis on signal processing algorithms for wire-
he held the Intersil/SRC Graduate Fellowship and less and high-speed wireline channels.
the Pittman Fellowship. His doctoral research on
wireless interconnects was a Phase One winner and
a Phase Two first runnerup in the 2000 SRC Copper
Design Contest.
In 2001, he joined IBM and is presently a Research Brian Gaucher performed his undergraduate work
Staff Member at the IBM T. J. Watson Research Center, Yorktown Heights, NY, at the Univesity of Massachusetts and graduate work
engaged in millimeter-wave, RF, and high-speed wired integrated circuit design. at Northeastern University.
From 1982 to 1983, he worked at Alpha Industries
R&D Laboratory designing microwave GaAsFET
amplifiers, switches detectors limiters, filters, and
Scott K. Reynolds received the B.S.E.E. degree from supercomponents. In 1984, he joined GTE Commu-
the University of Michigan in 1983, the M.S.E.E. de- nication Systems Division, working in the area of
gree from Stanford University in 1984, and the Ph.D. research and development of secure spread spectrum
degree in electrical engineering, also from Stanford communication and radar systems for the military,
in 1987. across the 900 MHz to 60 GHz frequency bands. In
He joined IBM in 1988 and is presently a Re- 1993, he joined IBM and is presently a Research Staff Member at the IBM
search Staff Member at the IBM T. J. Watson T. J. Watson Research Center, Yorktown Heights, NY, where he manages a
Research Center in Yorktown Heights, New York. communication system design and characterization group. His present research
His job responsibilities have involved analog and interests include 60 GHz Gb/s wireless communication design and biomedical
mixed-signal circuit design for high speed commu- applications of wireless technology. His group has helped more than five
nication systems, including optical, wired, and RF products come to market.
wireless systems, and disk drive channels. Currently, he is engaged primarily Dr. Gaucher is an IBM master inventor and holds two outstanding technical
in development of RFICs for high data rate wireless communication links. achievement awards and one corporate award.