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Article history: The polymer impregnation and pyrolysis (PIP) method is optimized to consolidate particulates, and to
Received 9 July 2006 produce a continuous SiC network to yield high thermal conductivity monoliths from particulates. The
Received in revised form 29 January 2008 process as presently employed, consists of impregnating a polymeric precursor into a cast sample or a
Accepted 17 April 2008
pressed pellet, pyrolyzing, and crystallizing at high temperature to a final form. The use of gas pressure
Available online 30 June 2008
in the polymer impregnation step was found essential to improve the density of the matrix, provided
that the nature of the gas and the pressure applied were optimized. Thermal conductivity of this matrix
Keywords:
indicated that higher crystallization temperatures improve the conductivity by removing impurities and
SiC
Consolidation increasing crystallite size. The impregnation process also permits bonding of solids to produce complex
Thermal conductivity engineering shapes if high temperature crystallization is possible.
Polymer impregnation and pyrolysis © 2008 Elsevier B.V. All rights reserved.
Bonding
0920-3796/$ – see front matter © 2008 Elsevier B.V. All rights reserved.
doi:10.1016/j.fusengdes.2008.04.008
714 S.G. Lee et al. / Fusion Engineering and Design 83 (2008) 713–719
2. Sample fabrication
2.1. Materials
Table 1
Sample list for thermal conductivity measurements
Table 2
Thermal cycle control for PIP (polymer impregnation and pyrolysis)
1573 K. The large and open pore structure due to higher tempera-
Fig. 6. (a) XRD pattern of crystallized SiC and (b) crystallite size depending on
ture pyrolysis would be benefit for the subsequent PIP cycle.
various crystallization conditions.
The XRD study showed, Fig. 6(a), the broad peaks representing
the formation of -SiC (cubic form) for the PIP product crystallized
at above 1523 K, which is consistent with the results reported by
Starfire [10]. Using the half width of the broad (1 1 1) peaks and with its quantity increasing with time [4], no distinct peaks for
the Debye and Scherrer formula [19], we calculated the crystallite crystobalite were observed in the present work. Nonetheless, very
size. In Fig. 6(b) we report the crystallite size as a function of the small amount of SiO or SiO2 unresolved by XRD could exist in the
crystallization temperatures and time. The crystallite size appeared SiCp/SiC–PIP due to high temperature oxidation because UHP Ar
to depend more on the crystallization temperature than on the time contains about 0.2 ppm of oxygen as an impurity. At high temper-
duration at temperature. ature, the crystobalite and free carbon can be removed owing to
The pyrolyzed product also appeared to retain small amounts carbothermic reaction [20,21].
of free carbon (C), as observed in the XRD in Fig. 6(a). On the
other hand, although crystobalite was reported to form during PIP,
3.2. Density evolution of SiCp/SiC–PIP matrix during PIP process
Table 3
Designation of SiCp/SiC–PIP samples for density evolution
lated as follows;
Fig. 10. SiCp/SiC–PIP samples: (a) curing and (b) after 6 cycle of PIP with high
Fig. 9. Homogeneous density, 10 m SiCp/SiC–PIP samples; after 6 cycle of PIP with pressurization impregnation.
4 MPa of Ar gas pressurization impregnation; (a) low magnification and (b) high
magnification.
SiCp/SiC–PIP matrix crystallized at 1573 and 1773 K were 10 and
50 W/mK at 1273 K; respectively. This may be related to the fact
The microstructure observation of SiCp/SiC–PIP matrix revealed
that the crystallization temperature increased crystallite size and
that the pore size became smaller with the number of PIP cycles,
may have improved its purity.
as shown in Fig. 10(a) for as-cured samples, and in Fig. 10(b) after 6
Low thermal conductivity may have resulted not only from the
full PIP cycles to 1573 K. For the cured samples, which were con-
very fine pores and crystallites, but also from impurities [14,22,23].
solidated by one cycle of PIP (1123 K), the pore size was about
As observed in XRD study, the crystallite size of PIP product was
20–100 m whereas after 6 cycles of PIP to1573 K, we measured
increased with the crystallization temperature; high temperature
about 1–2 m diameter pores (Fig. 10(b)).
crystallization also removed free carbon that may be retained in
The comparison between the measured density and the max-
imum density calculated with the polymer yield confirmed that
the process was done ideally when high gas pressure (4 MPa
of UHP Ar gas) was used for impregnating the polymer into a
porous body. Since the volume fraction of SiC particles was about
0.55, the theoretical maximum density in this case should be
about 89%TD (the volume fraction of SiC powder × density of SiC
powder + the volume fraction of PIP product × density of PIP prod-
uct = 0.55 × 3.21 + 0.45 × 2.5 = 2.85 g/mL). The 2–4% difference in
the density from the theoretical maximum are probably due to
fabrication defects (closed porosity) produced during PIP.
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4. Summary tivity LWR fuels, in: Proc. ANS Meeting on LWR Fuel Performance, Orlando,
2004.
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1773 K was necessary to produce high thermal conductivity the [10] Starfire Inc. website, http://www.starfiresystems.com.
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Although SiC fiber was not introduced in the present study, con- based ceramics from polymer precursors, Pure Appl. Chem. 74 (11) (2002)
sidering that if the size of fiber is similar to that of the powder, as 2111–2117.
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present work. [15] R. Lattar, MS Thesis, Purdue University (2005).
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polymer-derived SiC matrix composites: processing and microstructure, Com-
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The authors would like to thank Mitchell Meyer, Rory Kennedy [19] E.F. Kaelble, Handbook of X-rays, McGraw-Hill, New York, 1967.
and Andrew Madison of the Idaho National Laboratory for their [20] E. Bouillon, F. Langlais, R. Pailler, R. Naslain, F. Cruege, J.C. Sathrou, A. Delpuech,
help in conducting the thermal property measurements, and the C. Laffon, P. Lagrade, M. Monthioux, A. Oberlin, J. Mater. Sci. 26 (1991)
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USDOE for their financial support of this work, under the DOE–NERI [21] F.J. Narciso-Romero, F. Rodriguez-Reinoso, J. Mater. Sci. 31 (1996) 779.
program. (Project No. 02-180 Award DE-FG07-02ID22613). [22] T. Taguchi, N. Igawa, R. Yamada, S. Jitsukawa, Effect of thick SiC interphase lay-
ers on microstructure, mechanical and thermal properties of reaction-bonded
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