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ARTICLE IN PRESS

Materials Science in Semiconductor Processing 9 (2006) 92–95

FTIR spectroscopic system with improved sensitivity


V.D. Akhmetova,b,, H. Richtera,b
a
IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
b
IHP/BTU Joint Lab, Konrad-Wachsmann-Allee 1, 03013 Cottbus, PF 101344 Germany
Available online 17 February 2006

Abstract

The problem of the determination of the intensity of weak infrared (IR) absorption bands by differential IR
spectroscopy is considered for the case of a noise-limited sensitivity. A spectroscopic system based on a Fourier transform
IR (FTIR) spectrometer which improves the sensitivity of the IR method by at least 30 times, is described. In the
conventional differential FTIR measurements, only a single pair of spectra (from the analyzed sample and from
the reference) is taken during the whole acquisition time. In contrast, in our system, we take the data interchangeably
from the analyzed pair of sample and reference during the same acquisition time. This ‘‘modulation’’ of samples suppresses
the contribution of the low-frequency noise as well as long-term instabilities in the differential spectrum. The described
system consists of an FTIR spectrometer, a computer-controlled optimized sample changer, and software for fully
automated multiple measurements. The main steps of data processing as well as an example of application of multiple
measurements for a diagnostics of thin wafers are presented.
r 2006 Elsevier Ltd. All rights reserved.

PACS: 07.57.Ty; 78.20.-e; 78.30.-j

Keywords: FTIR; Spectroscopy; Sensitivity; Silicon

1. Introduction trometers. An analyzed pair of sample and corre-


sponding reference probe is measured sequentially
Differential infrared (IR) absorption spectro- in a relatively short time, typically from several
scopy is widely used in semiconductor material minutes to several hours, which depends on the
research for the impurity and defect analyses of desired accuracy. Nevertheless, the sensitivity of
both bulk materials and thin layers. Usually, commercially available FTIR spectrometers does
Fourier transform IR (FTIR) spectrometers serve not satisfy important requirements of the present
for such investigations because of their better semiconductor material science. The global ten-
sensitivity in comparison with the dispersive spec- dency of device miniaturization as well as the
progress in the performance of bulk materials
causes the reduction of the analyzed sheet density
Corresponding author. IHP/BTU Joint Lab, Konrad-Wachs-
of impurities or defects and, consequently, the
mann-Allee 1, 03013 Cottbus, PF 101344, Germany.
reduction of the intensity of the detected absorbance
Fax: +49 355 69 4961.
E-mail address: akhmetov@ihp-microelectronics.com bands. The absorption-induced changes in the
(V.D. Akhmetov). transmittance become comparable to the noise level

1369-8001/$ - see front matter r 2006 Elsevier Ltd. All rights reserved.
doi:10.1016/j.mssp.2006.01.032
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V.D. Akhmetov, H. Richter / Materials Science in Semiconductor Processing 9 (2006) 92–95 93

of the recorded spectra. This noise level strongly are collected after finishing the procedure of data
limits the sensitivity of the IR method. Special acquisition. The parameter n is chosen to be 8-fold.
probes, up to 10 mm thick, are used for enhancing a The obtained sequence of 2n partial spectra Si
signal-to-noise ratio [1,2]. Such approach is not (i ¼ 0, 1, 2, 3,y, 2n2, 2n1) is treated in the
suitable for monitoring wafers during semiconduc- following manner:
tor processing. Moreover, the intrinsic lattice
absorption strongly limits the thickness of the a) Routine analysis: The differential transmission
samples. A simple elongation of the data acquisition spectrum T is calculated as a ratio of the mean of
time does not provide a significant ‘‘refining’’ of the odd partial spectra to the mean of even partial
differential spectra from the noise. This is due to the spectra:
increase of the contributions of both low-frequency
noise and long-term instabilities in the recorded mean of odd spectra
T¼ : (1)
differential spectrum with increasing duration of mean of even spectra
measurements.
In this report, we describe a spectroscopic system b) Determination of achieved photometric accuracy:
based on a FTIR spectrometer, which improves the The sequence of Si is considered as chronologi-
sensitivity of the IR method by 30 times or more. In cally ordered k groups, each containing 2n/k
contrast to the traditional procedure, which in- spectra. The individual differential transmission
cludes a record of only one pair of spectra during spectrum Tj (j ¼ 1, 2,y, k) is calculated for each
acquisition time, in our system, we take the data of the groups. It is suitable to divide the whole
interchangeably from the analyzed pair of samples sequence Si into 4 or 8 groups. The obtained k
during the same acquisition time. The ‘‘modula- curves Tj as well as the mean of Tj (signed as
tion’’ of samples suppresses the contribution of low- TT), can be analyzed visually. More quantita-
frequency noise as well as instabilities of FTIR tively, the Tj are analyzed by means of mean
spectrometers in the final differential spectrum square deviation
calculated from the recorded set of the spectra [3,4]. hX  2 . i1=2
sigma ¼ T j  TT ð k ð k  1Þ Þ .

2. Apparatus and procedure (2)

An evacuated FTIR spectrometer BOMEM DA8 c) Estimation of residual contribution of the drift: A
served as a base for our system. Computer pair of artificial differential spectra is calculated
controlled sample changers were designed for Deven ¼ 0.5(mean of S4i+2)/(mean of S4i) (i ¼ 0,
periodical change of samples during data acquisi- 1, y, n/2 – 1),
tion. Construction of the sample changers as well as Dodd ¼ 0.5(mean of S4i+3)/(mean of S4i+1)
the speed of moving stages were optimized in order (i ¼ 0, 1, y, n/2 – 1).
to reduce an influence of movement of sample Usually, these two curves should coincide one
changer on the alignment of Michelson interferom- with another within the accuracy determined by
eter in the spectrometer. (2). If such coincidence occurs, the obtained
Special software was created using Array Basic spectrum T can be divided by the mean of Deven,
and C++ allowing to carry out the multiple Dodd in order to compensate the residual drift if
measurements together with initial data processing the drift is remarkable. If a strong difference
in a fully automated regime. 16 to 1 million partial between Deven and Dodd is found, it indicates a
spectra can be measured and numerically treated by possible instability during the measurements,
our current software during one multiple measure- which could be surface or bulk changes due to
ment procedure. Each exchange of sample in the adsorption–desorption, thermal and mechanical
sample changer is accompanied by recording a new relaxations, photo-induced phenomena, etc.
spectrum Si, where i is the number of the spectrum. d) Rejection of bad partial spectra: If an abnormally
The system starts with recording the spectrum S0 of low photometric quality of T is obtained after
the reference, implying that all further even spectra data processing, the family of n partial differ-
belong to the reference and all odd spectra belong to ential spectra ti ¼ S2i+1/S2i (i ¼ 0, 1,y, n1) is
the analyzed sample. As a result, n pairs of spectra calculated and analyzed. The pairs of S2i+1 and
ARTICLE IN PRESS
94 V.D. Akhmetov, H. Richter / Materials Science in Semiconductor Processing 9 (2006) 92–95

S2i spectra corresponding to the revealed abnor-


mally deviated spectra ti are rejected from the
whole set of collected experimental spectra. The
remaining reduced set of Si is analyzed again
starting from Section a).

3. Achieved photometric accuracy and applications

The photometric accuracy of differential spectra


of the described spectroscopic equipment can be
characterized by ‘‘line 100%’’ [5]. This line is defined
as equal to the ratio between two sequentially
recorded spectra of energy of beam of spectrometer
without sample. For an ideal device, this ratio is
exactly equal to 1 (100%). Most straightforward
comparison of such lines 100% obtained by Fig. 2. Lines 100% after subtraction of the linear background, in
traditional measurement and by multiple measure- the atmospheric transparency window 700 –1200 cm1. The right
ments is presented in Fig. 1. For this comparison, axis shows the traditional procedure, and the left axis shows the
the same set of experimental data consisting of 4096 multiple measurements. (a) Measured without additional IR
partial spectra was used for calculating each of the filter, the same experimental data as in Fig. 1. (b) Measured with
additional low-pass filter.
lines. Line 100% of the traditional measurement
was defined as the ratio of the second half of the
whole set Si (i ¼ 2048, 2049,y, 4095) to the first
one (i ¼ 0, 1, 2,y, 2047). Such data processing 1600 and 3600 cm1, in spite of maintaining the
corresponds to the traditional procedure of mea- vacuum of several Torr in the spectrometer during
surement. Line 100%, which was defined according data acquisition. The more detailed comparison of
to (1) for the modified procedure, demonstrates the noise in different lines 100% is performed in Fig.
clearly the drastic improvement of photometric 2a. Here, the linear baselines are omitted for clarity.
accuracy, in the whole presented IR region. This The vertical scale for the line 100% obtained from
improvement is more pronounced for regions where multiple measurements is expanded by a factor of 30
the atmospheric absorption is relatively high, near relative to the scale of the line 100% in the
traditional measurement. It is seen from Fig. 2a
that both of curves have the comparable deviations,
indicating a 30-time improvement of signal-to-noise
ratio as a result of multiple procedure. A further
improvement of the photometric accuracy in the
selected spectral region can be achieved by using an
additional IR filter, which cuts off the shorter
wavelengths (Fig. 2b).
The main steps of our statistical treatment,
according to Section b), are illustrated in Fig. 3a,
where the 8 partial lines 100% as well as their
average and confidence interval are drawn. A
confidence interval better than 0.008% can be
reached in all points of the region 700 –1200 cm1
using the multiple exchange procedure.
The achieved improvement of the photometric
accuracy allows to detect the small absorption
Fig. 1. Lines 100% in a wide spectral region derived from
bands in semiconductor materials. An example of
traditional procedure and from multiple procedure of measure- the application of the multiexchange procedure is
ments. The acquisition time is the same for both cases. shown in Fig. 4 for the case of N detection in Si. In
ARTICLE IN PRESS
V.D. Akhmetov, H. Richter / Materials Science in Semiconductor Processing 9 (2006) 92–95 95

this case, the enhanced sensitivity of our equipment


allows to perform N determination in Si wafers with
standard thickness, which do not exceed 1 mm [3]
instead of the specially prepared 10 mm thick
samples.

4. Conclusions

The use of multiple exchanges of samples during


differential FTIR spectroscopic measurements im-
proves the photometric accuracy of differential
spectra under the same acquisition time by more
than 30 times. The developed algorithm of data
processing provides results for the differential
spectrum, the spectral distribution of the confidence
interval, the refining of the set of partial spectra and
the estimation of residual contribution of the drift in
resulted spectrum. It was demonstrated that the
developed system would be of high efficiency for the
study of modern semiconductor materials.

Acknowledgments

We thank M. Ratzke (BTU) for the assistance


with the software, U. Wulf (BTU), N. Inoue (OPU,
Japan) for helpful comments to the manuscript. We
gratefully acknowledge financial support by the
Fig. 3. Determination of confidence interval of multiple mea-
surements. (a) Set of 8 lines 100% and (b) mean line 100% and HWP grant of the Federal Government of Germany
interval 73 sigma determined from Eqs. (1) and (2). and the State of Brandenburg.

References

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[2] Tanahashi K, Yamada-Kaneta H. Technique for determina-
tion of nitrogen concentration in Czochralski silicon by
infrared absorption measurement. Jpn J Appl Phys 2003;
42(3A, part 2):L223–5.
[3] Akhmetov VD, Lysytskiy O, Richter H. Nitrogen in thin
silicon wafers determined by infrared spectroscopy. In: High
purity silicon VIII. Electrochemical society proceedings, vol.
2004–05, 2004, p. 109–20.
[4] Watanabe M, Takenawa N. FTIR measurement of nitrogen
in silicon using shuttle type sample stage. In: High purity
silicon VIII. Electrochemical society proceedings, vol.
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[5] Standard test method for substitutional atomic carbon
Fig. 4. Nitrogen-related IR bands determined in a 730 mm thick content of silicon by infrared absorption, JEITA EM-3503,
Si wafer by multiple measurements with a total acquisition time Japan Electronics and Information Technology Industry
of 2 h. The linear slope of the curves is subtracted. Association, 2002, p. 1–12.

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